a D FC t FAIRCHILD June 1996 QO} seEMICONDUCTOR = NDT454P P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field effect -5.9A, -30V. Rosion = 0-050 @ V,, = -10V transistors are produced using Fairchilds proprietary, high cell Rosion) = 0.072 @ Va, = -6V density, DMOS technology. This very high density process is Rosion = 0.092 @ Vag = -4.5V. especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly , ; oe , suited for low voltage applications such as notebook computer . sirake mount package, capability in a widely used power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. = High density cell design for extremely low Reson, SOT-223 G SOT-223* G (J232) Absolute Maximum Ratings 1, = 25C unless otherwise noted Symbol | Parameter NDT454P Units Voss Drain-Source Voitage -30 Voss Gate-Source Voltage +20 bb Drain Current - Continuous (Note 1a) 45.9 A - Pulsed +15 Py Maximum Power Dissipation (Note 1a) 3 Ww (Note 1b) 13 (Note 1c) 1 TT. | Operating and Storage Temperature Range -65 to 150 C THERMAL CHARACTERISTICS Rasa Thermal Resistance, Junction-to-Ambient (note 1a) 42 CW Rasc Thermal Resistance, Junction-to-Case (Note 1) 12 CW * Order option J23Z for cropped center drain lead. 4-314 NOT454P Rev. 02Electrical Characteristics (1, = 25C unless otherwise noted) Symbol | Parameter Conditions Min | Typ | Max | Units OFF CHARACTERISTICS BV oss Drain-Source Breakdown Voltage Veg = OV, I= -250 pA 30 Vv loss Zero Gate Voltage Drain Current Vog= 24 V, Vag= OV -t HA Vog = 15 V, Vag= OV [t,=70C 5 | pA lesse Gate - Body Leakage, Forward Veg = 20V, Vog= OV 100 nA lease Gate - Body Leakage, Reverse Veg = -20V, Vag= OV -100 nA ON CHARACTERISTICS (note 2) Vossen Gate Threshold Voltage Vog= Ves: Ip = -250 pA | 27 v Posy Static Drain-Source On-Resistance Vog = 10 V, 1, =-5.9A 0.038 | 0.05 Qa Veg = 6V, |,=-5.2A 0.046 | 0.07 Vog = -4.5V, p= -4.6A 0.064 | 0.09 oon On-State Drain Current Veg = -10V, Vog= 8 V 15 A Vag = 4.5, Vog = SV $ Ors Forward Transconductance Vog = 15 V, 1, = 5.9A 10 S DYNAMIC CHARACTERISTICS C., Input Capacitance Vog = 15 V, Vag=0V, 950 pF C... Output Capacitance f= 1.0 MHz 610 pF C.5 Reverse Transfer Capacitance 220 pF SWITCHING CHARACTERISTICS (note2) toon) Tum - On Delay Time Vop = -15V, I, = -1A, 10 30 ns t, Tum - On Rise Time Vou = 10 V, Rog, = 6.2 18 60 ns tran Tum - Off Delay Time 80 120 ns t Tum - Off Fall Time 45 100 ns Q, Total Gate Charge Vos = 15 V, 29 40 nc Q.. Gate-Source Charge p= B.A, Vog=-10V 3 Q, Gate-Drain Charge 11 4-315 NDT454P Rev. 02 dvSvlaNnNDT454P Electrical Characteristics (1, = 25C unless otherwise noted) Symbol Parameter Conditions | Min | Typ Max | Units DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I, Maximum Continuous Drain-Source Diode Forward Current 1.9 A Ve Drain-Source Diode Forward Voltage Veg 2 OV, 1=-5.9A (Note2) 0.85 | -1.3 Vv t, Reverse Recovery Time Veg = OV, | = -5.9 A, dl./dt = 100 A/us 100 ns Notes. 1. Ry, is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R,, is guaranteed by design while R,,,, is determined by the user's beard design. TyTa TT Typical R,., using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 42C/W when mounted on a 1 in pad af 20z copper. b. 95C/W when mounted on a 0.066 in pad of 20z copper. cs. 110C/W when mounted on a 0.0123 in pad of 202 copper. 1a 1b Scale 1: 1 on letter size paper 2. Pulse Test: Pulse Width < 300us, Duly Cycle < 2.0%. 4-316 NDT4S4P Rev. D2Typical Electrical Characteristics tp, DRAIN-SOURCE CURRENT (A) oO T 2 3 4 Vong . DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 1.6 fo] | 4 1y=-5.9A Q = i 2 1.4> Veg =-10V NE $s i 24 Z2 & gr. Z " SW 2 a os Sos & 6 06 -50 -25 0 25 50 75 100-125 ty . JUNCTION TEMPERATURE (C) Figure 3. On-Resistance Variation with Temperature. -20 Ss Vos = -10V pessc Lf, 1 4 125 . VA Ip, DRAIN CURRENT (A) _ 7 2 3 4 -Vgsg , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 150 Fios(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(on). NORMALIZED DRAIN-SOURCE ON-RESISTANCE Vth NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE 0.5 oO 4 8 12 -16 -20 tp DRAIN CURRENT (A} Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Ves = -10V Ty = 125C 25C 88C i 6 -10 tS -20 -60 1 p, ORAIN CURRENT (A) Figure 4. On-Resistance Variation with Drain Current and Temperature. -28 0 25 50 75 100 Ty. JUNCTION TEMPERATURE (C) Figure 6. Gate Threshold Variation with Temperature. 125 150 4-317 NOT454P Rev. D2 dvSvLaNnNDT454P Typical Electrical Characteristics (continued) ao 9 2 & & & 2 & 8Voss , NORMALIZED DAAIN-SOURCE BREAKDOWN VOLTAGE 2 i} 2 I 2 2 a o ss o 3 25 0 25 50 75 100 125 150 T, , JUNCTION TEMPERATURE (C) Figure 7. Breakdown Voltage Variation with Temperature. 3000 2000 1000 soo CAPACITANCE (pF) 0.1 0.3 1 3 10 30 Vpg - DRAIN TO SOURCE VOLTAGE (V) Figure 9. Capacitance Characteristics. Figure 11. Switching Test Circuit. -lg , REVERSE ORAIN CURRENT (A) 0.001 . 0 0.3 0.6 0.9 1.2 -Vso , BODY DIODE FORWARD VOLTAGE (V} Figure 8. Body Diode Forward Voltage Variation with Source Current and Temperature. Veg GATE-SOURCE VOLTAGE (V) 0 10 20 30 Q, . GATE CHARGE (nC) Figure 10. Gate Charge Characteristics. PULSE WIDTH ~ Figure 12. Switching Waveforms. 40 iNVERTED 4-318 NDT454P Aev. D2Typical Electrical and ThermalCharacteristics (continued) 20 T e & Vog = -15V Ty= 85C = WW 16 2 25C g oe 12 Lo oon BPC > 3 8 LO o 3 2 Vv 4 a | a ot. o 5 10 15 -20 Ip. DRAIN CURRENT (A) Figure 13. Transconductance Variation with Drain Current and Temperature. 7 = 5 6 ta yy [een f _ S 2 5 & Q watf? -o EB | tte wn . a { L 4585 FAA Board ee i "5" . jaare a a r Ts = 25C a Siiit Air 8 > a ee Vag = -10V oa 02 0.4 06 08 1 20z COPPER MOUNTING PAD AREA (in 7) Figure 15. Maximum Steady-State Drain Current versus Copper Mounting Pad Area. coy 2 8 ~~ NS o a 0.02 ' 0.01 2 0.005 tt), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Single 2 8 xy 0.001 9.0001 0.001 oof & or ca ' ch Sy & 4.5x5" FR-4 Board. STEADY-STATE FOWER DISSIPATION (W) T, = 28C Shit Air 0.5 a a2 0.4 0.6 0.8 20z COPPER MOUNTING PAD AREA (in?) Figure 14. SOT-223 Maximum Steady-State Power Dissipation versus Copper Mounting Pad Area. 30 10 = 3 = aw t & > oO 2 0.3 a Vag =-10V Soy a @ SINGLE PULSE . Rasa = See Note Ic 003 Ty = 25C 0.01 . : 0.1 0.2 Os 1 2 5 10 30050 - Vpg , DRAIN-SOURCE VOLTAGE (V) Figure 16. Maximum Safe Operating Area. Roya ert) Aayy Roun = See Note ic Pipk) a by ; + -1, Ty Th =P OA yg Duty Cycle, D=t, / tz 0.1 1 100 t,, TIME (sec) 10 Figure 15. Transient Thermal Response Curve. Note: depending on the circuit board design. Thermal characterization performed using the conditions described in note tc. Transient thermal response will change 4-319 300 a NOT454P Rev. D2 dvSvLaNn