Si1040X Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 (V) 1.8 to 8 RDS(on) () ID (A) 0.625 at VIN = 4.5 V 0.43 0.890 at VIN = 2.5 V 0.36 1.25 at VIN = 1.8 V 0.3 Si1040X 4 2, 3 S2 D2 Q2 * Halogen-free According to IEC 61249-2-21 Definition * TrenchFET(R) Power MOSFET * 1.8 V to 8 V Input * 1.5 V to 8 V Logic Level Control * Smallest LITTLE FOOT(R) Package: 1.6 mm x 1.6 mm * 2000 V ESD Protection On Input Switch, VON/OFF * Adjustable Slew-Rate * Compliant to RoHS Directive 2002/95/EC 6 R1, C1 DESCRIPTION The Si1040X includes a p- and n-Channel MOSFET in a single SC89-6 package. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a levelshift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The Si1040X operates on supply lines from 1.8 V to 8 V, and can drive loads up to 0.43 A. Q1 5 ON/OFF 1 R2 SC89-6 Top View R2 D2 1 6 R1, C1 2 5 ON/OFF Marking Code P WL Lot Traceability and Date Code D2 3 4 S2 Part Number Code Ordering Information: Si1040X-T1-GE3 (Lead (Pb)-free and Halogen-free) TYPICAL APPLICATION CIRCUIT Si1040X 20 Switching Variation R2 at V IN = 2.5 V, R1 = 20 k 2, 3 4 VOUT VIN tf 16 Q2 R1 C1 6 Time (s) 6 5 ON/OFF Co IL = 0.36 A VON/OFF = 3 V Ci = 10 F Co = 1 F 12 8 tr LOAD Q1 td(off) 4 td(on) Ci 0 1 0 R2 R2 Document Number: 71809 S10-2544-Rev. D, 08-Nov-10 GND 2 4 6 8 10 R2 (k) Note: For R2 switching variations with other VIN/R1 combinations See Typical Characteristics www.vishay.com 1 Si1040X Vishay Siliconix The Si1040X is ideally suited for high-side load switching in portable applications. The integrated N-Channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. COMPONENTS R1 Pull-Up Resistor Typical 10 k to 1 ma R2 Optional Slew-Rate Control Typical 0 to 100 ka C1 Optional Slew-Rate Control Typical 1000 pF Notes: a. Minimum R1 value should be at least 10 x R2 to ensure Q1 turnon. ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symbol Limit VIN 8 VON/OFF 8 Input Voltage ON/OFF Voltage Continuousa, b Load Current Pulsedb, c Unit V 0.43 IL A 1.0 Continuous Intrinsic Diode Conductiona IS Maximum Power Dissipationa PD 0.174 W TJ, Tstg - 55 to 150 C ESD 2 kV Operating Junction and Storage Temperature Range ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 ) - 0.15 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambient (Continuous Current)a RthJA 600 720 Maximum Junction-to-Foot (Q2) RthJC 450 540 Unit C/W Notes: a. Surface mounted on 1" x 1" FR4 board. SPECIFICATIONS (TJ = 25 C, unless otherwise noted) Parameter Symbol Test Conditions Reverse Leakage Current IFL VIN = 8 V, VON/OFF = 0 V Diode Forward Voltage VSD IS = - 0.15 A Min. Typ. Max. Unit 1 A 1.2 V 8 V OFF Characteristics 0.85 ON Characteristics Input Voltage Range On-Resistance (P-Channel) at 1 A On-State (P-Channel) Drain Current VIN RDS(on) ID(on) 1.8 VON/OFF = 1.5 V, VIN = 4.5 V, ID = 0.43 A 0.500 0.625 VON/OFF = 1.5 V, VIN = 2.5 V, ID = 0.36 A 0.710 0.890 VON/OFF = 1.5 V, VIN = 1.8 V, ID = 0.3 A 1.0 1.25 VIN-OUT 0.2 V, VIN = 5 V, VON/OFF = 1.5 V 1 VIN-OUT 0.3 V, VIN = 3 V, VON/OFF = 1.5 V 0.8 A Notes: a. Surface mounted on FR4 board. b. VIN = 8 V, VON/OFF = 8 V, TA = 25 C. c. Pulse test; pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71809 S10-2544-Rev. D, 08-Nov-10 Si1040X Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 1.4 1.0 VON/OFF = 1.5 V to 8 V VON/OFF = 1.5 V to 8 V 1.2 0.8 0.6 V DROP (V) V DROP (V) 1.0 TJ = 125 C 0.4 TJ = 25 C 0.8 TJ = 125 C 0.6 TJ = 25 C 0.4 0.2 0.2 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.0 0.0 2.0 0.2 0.4 0.6 0.8 VDROP vs. IL at VIN = 4.5 V 1.4 1.6 1.8 VDROP vs. IL at VIN = 2.5 V 1.6 0.8 VON/OFF = 1.5 V to 8 V VON/OFF = 1.5 V to 8 V 0.7 1.2 0.6 1.0 V DROP (V) VDROP (V) 1.2 I L - (A) I L - (A) 1.4 1.0 TJ = 125 C 0.8 TJ = 25 C 0.6 0.5 TJ = 125 C 0.4 0.3 TJ = 25 C 0.4 0.2 0.2 0.1 0.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 4 VIN (V) VDROP vs. IL at VIN = 0.5 V 5 1.6 IL = 0.3 A VON/OFF = 1.8 V to 8 V IL = 0.3 A VON/OFF = 1.5 V to 8 V 1.4 R SS(on) - On-Resistance () VDROP Variance (V) 3 I L - (A) 0.10 VIN = 1.8 V 0.05 VIN = 4.5 V 0.00 - 0.05 - 0.10 - 0.15 - 50 2 VDROP vs. IL at VIN = 1.8 V 0.20 0.15 1 1.2 1.0 TJ = 125 C 0.8 0.6 TJ = 25 C 0.4 0.2 0.0 - 25 0 25 50 75 100 125 150 0 1 2 3 4 TJ - Junction Temperature (C) VIN (V) VDROP Variance vs. Junction Temperature On-Resistance vs. Input Voltage Document Number: 71809 S10-2544-Rev. D, 08-Nov-10 5 www.vishay.com 3 Si1040X Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 1.6 20 IL = 0.3 A VON/OFF = 1.5 V to 8 V 1.4 VIN = 1.8 V tf IL = 0.36 A VON/OFF = 3 V Ci = 10 F Co = 1 F VIN = 4.5 V 1.0 Time (s) (Normalized) R DS(on) - On-Resistance 16 1.2 0.8 0.6 12 8 td(off) tr 0.4 4 0.2 td(on) 0.0 - 50 0 - 25 0 25 50 75 100 125 150 0 2 4 6 8 TJ - Junction Temperature (C) R2 (k) Normalized On-Resistance vs. Junction Temperature Switching Variation R2 at VIN = 4.5 V, R1 = 20 kW 20 10 20 tf tf 16 16 12 Time (s) Time (s) tr IL = 0.36 A VON/OFF = 3 V Ci = 10 F Co = 1 F tr 8 8 td(off) 4 IL = 0.36 A VON/OFF = 3 V Ci = 10 F Co = 1 F 12 td(off) 4 td(on) td(on) 0 0 0 2 4 6 8 10 0 2 4 R2 (k) Switching Variation R2 at VIN = 2.5 V, R1 = 20 kW 8 10 Switching Variation R2 at VIN = 1.8 V, R1 = 20 kW 80 80 IL = 0.36 A VON/OFF = 3 V Ci = 10 F Co = 1 F td(off) tf 60 Time (F) 60 Time (s) 6 R2 (k) IL = 0.36 A VON/OFF = 3 V Ci = 10 F Co = 1 F 40 20 tf td(off) 40 tr 20 td(on) tr td(on) 0 0 www.vishay.com 4 20 40 60 80 0 100 0 20 40 60 80 R2 (k) R2 (k) Switching Variation R2 at VIN = 4.5 V, R1 = 300 kW Switching Variation R2 at VIN = 2.5 V, R1 = 300 kW 100 Document Number: 71809 S10-2544-Rev. D, 08-Nov-10 Si1040X Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 80 tf Time (s) 60 td(off) IL = 0.36 A VON/OFF = 3 V Ci = 10 F Co = 1 F 40 tr td(on) 20 0 0 20 40 60 80 100 R2 (k) Switching Variation R2 at VIN = 1.8 V, R1 = 300 kW 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 720 C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 10 100 600 Square Wave Pulse Dureation (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71809. Document Number: 71809 S10-2544-Rev. D, 08-Nov-10 www.vishay.com 5 Package Information Vishay Siliconix SC89: 6 LEADS (SOT563F) 2 3 E1/2 D 4 II IIII IIII II IIIIII A 6 2 aaa e1 5 C 2X 4 E/2 E E1 3 2X aaa IIIII IIIII IIIII B D 4 C II IIII IIII II 1 5 e 2 B 4 L1 L A 2X 3 bbb C 6X b ccc II II II II II II IIIIII II II II II II II IIIIII M C A-B D A1 A1 SEE DETAIL "A" MILLIMETERS Dim Min Max NOTES: 2. 2 3. 3 Dimensions in millimeters. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. Note Symbol Tolerances Of Form And Position A 0.56 0.60 aaa 0.10 A1 0.00 0.10 bbb 0.10 b 0.15 0.30 ccc 0.10 c 0.10 0.18 D 1.50 1.70 E 1.55 1.70 Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. E1 1.20 BSC e 0.50 BSC 44. Datums A, B and D to be determined 0.10 mm from the lead tip. e1 1.00 BSC Terminal numbers are shown for reference only. L 0.35 BSC 5. 5 L1 0.20 BSC 6. 6 These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. Document Number: 71612 25-Jun-01 6 DETAIL "A" IIIIII IIIIII 1. SECTION B-B C 2, 3 2, 3 ECN: E-00499--Rev. B, 02-Jul-01 DWG: 5880 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead 0.051 0.012 0.020 (0.300) (0.500) 0.019 (0.478) 0.031 (0.798) 0.069 (1.753) (1.300) 0.051 (0.201) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72605 Revision: 21-Jan-08 www.vishay.com 21 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000