Vishay Siliconix
Si1040X
Document Number: 71809
S10-2544-Rev. D, 08-Nov-10
www.vishay.com
1
Load Switch with Level-Shift
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 1.8 V to 8 V Input
• 1.5 V to 8 V Logic Level Control
• Smallest LITTLE FOOT® Package: 1.6 mm x 1.6 mm
• 2000 V ESD Protection On Input Switch, VON/OFF
• Adjustable Slew-Rate
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The Si1040X includes a p- and n-Channel MOSFET in a
single SC89-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a level-
shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5 V. The Si1040X operates on
supply lines from 1.8 V to 8 V, and can drive loads up to
0.43 A.
PRODUCT SUMMARY
VDS2 (V) RDS(on) ()I
D (A)
1.8 to 8
0.625 at VIN = 4.5 V ± 0.43
0.890 at VIN = 2.5 V ± 0.36
1.25 at VIN = 1.8 V ± 0.3
SC89-6
Top View
6
4
1
2
3
5
S2
ON/OFF
R1, C1
D2
D2
R2
Ordering Information: Si1040X-T1-GE3 (Lead (Pb)-free and Halogen-free)
D2
S2
ON/OFF
R2
1
4
6
5Q1
Q2
Si1040X
R1, C1
2, 3
Marking Code
PWL
Lot Traceability
and Date Code
Part Number Code
TYPICAL APPLICATION CIRCUIT
VOUT
GND
LOAD
VIN
ON/OFF
R2
R2
1
2, 3
C1
6
4
6
5
R1
Q1
Q2
Si1040X
Co
Ci
Switching Variation R2 at VIN = 2.5 V, R1 = 20 kΩ
0
4
8
12
16
20
0246810
R2 (kΩ)
IL = 0.36 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
tr
td(on)
td(off)
tf
(µs)Time
Note: For R2 switching variations with other VIN/R1
combinations See Typical Characteristics
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Document Number: 71809
S10-2544-Rev. D, 08-Nov-10
Vishay Siliconix
Si1040X
Notes:
a. Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-
on.
The Si1040X is ideally suited for high-side load switching in
portable applications. The integrated N-Channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Notes:
a. Surface mounted on FR4 board.
b. VIN = 8 V, VON/OFF = 8 V, TA = 25 °C.
c. Pulse test; pulse width 300 µs, duty cycle 2 %.
Stresses beyond those listed under “Absolut e Maximum Ratings” may cause permanent damage to t he device. These are stress rating s only, and functional opera tion
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
COMPONENTS
R1 Pull-Up Resistor Typical 10 k to 1 ma
R2 Optional Slew-Rate Control Typical 0 to 100 ka
C1 Optional Slew-Rate Control Typical 1000 pF
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Input Voltage VIN 8V
ON/OFF Voltage VON/OFF 8
Load Current Continuousa, b
IL
± 0.43
A
Pulsedb, c ± 1.0
Continuous Intrinsic Diode ConductionaIS- 0.15
Maximum Power DissipationaPD0.174 W
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 ) ESD 2 kV
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient (Continuous Current)aRthJA 600 720 °C/W
Maximum Junction-to-Foot (Q2) RthJC 450 540
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
OFF Characteristics
Reverse Leakage Current IFL VIN = 8 V, VON/OFF = 0 V 1µA
Diode Forward Voltage VSD IS = - 0.15 A 0.85 1.2 V
ON Characteristics
Input Voltage Range VIN 1.8 8 V
On-Resistance (P-Channel) at 1 A RDS(on)
VON/OFF = 1.5 V, VIN = 4.5 V, ID = 0.43 A 0.500 0.625
VON/OFF = 1.5 V, VIN = 2.5 V, ID = 0.36 A 0.710 0.890
VON/OFF = 1.5 V, VIN = 1.8 V, ID = 0.3 A 1.0 1.25
On-State (P-Channel) Drain Current ID(on) VIN-OUT 0.2 V, VIN = 5 V, VON/OFF = 1.5 V 1A
VIN-OUT 0.3 V, VIN = 3 V, VON/OFF = 1.5 V 0.8
Document Number: 71809
S10-2544-Rev. D, 08-Nov-10
www.vishay.com
3
Vishay Siliconix
Si1040X
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
VDROP vs. IL at VIN = 4.5 V
VDROP vs. IL at VIN = 1.8 V
VDROP Variance vs. Junction Temperature
0.0
0.2
0.4
0.6
0.8
1.0
0.0 0.2 0.4 0.6 0.81.0 1.2 1.4 1.6 1.82.0
I
L
- (A)
(V)V
DROP
V
ON/OFF
= 1.5 V to 8 V
T
J
= 125 °C
T
J
= 25 °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0 0.2 0.4 0.6 0.81.0 1.2 1.4 1.6
IL- (A)
(V)VDROP
VON/OFF = 1.5 V to 8 V
TJ = 125 °C
TJ = 25 °C
- 0.15
- 0.10
- 0.05
0.00
0.05
0.10
0.15
0.20
- 50 - 25 0 25 50 75 100 125 150
Variance (V)
VDROP
IL = 0.3 A
VON/OFF = 1.8 V to 8 V
VIN = 4.5 V
VIN = 1.8 V
TJ-Junction Temperature (°C)
VDROP vs. IL at VIN = 2.5 V
VDROP vs. IL at VIN = 0.5 V
On-Resistance vs. Input Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.0 0.2 0.4 0.6 0.81.0 1.2 1.4 1.6 1.8
IL- (A)
(V)VDROP
VON/OFF = 1.5 V to 8 V
TJ = 125 °C
TJ = 25 °C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
012345
VIN (V)
(V)VDROP
VON/OFF = 1.5 V to 8 V
TJ = 125 °C
TJ = 25 °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
012345
- On-Resistance (Ω)
RSS(on)
VIN (V)
IL = 0.3 A
VON/OFF = 1.5 V to 8 V
TJ = 125 °C
TJ = 25 °C
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4
Document Number: 71809
S10-2544-Rev. D, 08-Nov-10
Vishay Siliconix
Si1040X
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized On-Resistance
vs. Junction Temperature
Switching Variation
R2 at VIN = 2.5 V, R1 = 20 kW
Switching Variation
R2 at VIN = 4.5 V, R1 = 300 kW
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
TJ-Junction Temperature (°C)
IL = 0.3 A
VON/OFF = 1.5 V to 8 VVIN = 1.8 V
VIN = 4.5 V
RDS(on) - On-Resistance
(Normalized)
0
4
8
12
16
20
0246810
R2 (kΩ)
IL = 0.36 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
(µs)
Time
tr
td(on)
td(off)
tf
0
20
40
60
80
0 20406080 100
R2 (kΩ)
IL = 0.36 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
(µs)Time
td(on)
tr
td(off)
tf
Switching Variation
R2 at VIN = 4.5 V, R1 = 20 kW
Switching Variation
R2 at VIN = 1.8 V, R1 = 20 kW
Switching Variation
R2 at VIN = 2.5 V, R1 = 300 kW
0
4
8
12
16
20
0246810
R2 (kΩ)
(µs)Time
tr
IL = 0.36 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
tf
td(on)
td(off)
0
4
8
12
16
20
0246810
R2 (kΩ)
(µs)Time
IL = 0.36 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
td(on)
tr
tf
td(off)
0
20
40
60
80
0 20406080 100
R2 (kΩ)
(µF)Time
IL = 0.36 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF tf
td(off)
trtd(on)
Document Number: 71809
S10-2544-Rev. D, 08-Nov-10
www.vishay.com
5
Vishay Siliconix
Si1040X
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71809.
Switching Variation
R2 at VIN = 1.8 V, R1 = 300 kW
0
20
40
60
80
0 20406080100
R2 (kΩ)
(µs)
Time
IL = 0.36 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
tf
td(off)
tr
td(on)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10 -3 10-2 00601110 -1
10-4 100
2
1
0.1
0.01
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 720 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Square Wave Pulse Dureation (s)
ÎÎ
ÎÎ
ÎÎ
NOTES:
1. Dimensions in millimeters.
2. Dimension D does not include mold flash, protrusions or gate
burrs. Mold flush, protrusions or gate burrs shall not exceed
0.15 mm per dimension E1 does not include interlead flash or
protrusion, interlead flash or protrusion shall not exceed
0.15 mm per side.
3. Dimensions D and E1 are determined at the outmost extremes
of the plastic body exclusive of mold flash, the bar burrs, gate
burrs and interlead flash, but including any mismatch between
the top and the bottom of the plastic body.
4. Datums A, B and D to be determined 0.10 mm from the lead tip.
5. Terminal numbers are shown for reference only.
6. These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
6
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4
32
4
32
5
4
Caaa
C
M
ccc A–B D
2X
e
B6X b
Caaa
2X
D
E/2
E
Cbbb
2X
123
654
E1
E1/2
A
D
e1
L1
L
A
B
C
A1
A1
SECTION B-B
DETAIL “A”
SEE DETAIL “A”
4
3
2
5
6
Package Information
Vishay Siliconix
Document Number: 71612
25-Jun-01 www.vishay.com
1
SC89: 6Ć LEADS (SOTĆ563F)
MILLIMETERS Tolerances
Dim Min Max Note Symbol Of Form And
Position
A0.56 0.60 aaa 0.10
A1 0.00 0.10 bbb 0.10
b0.15 0.30 ccc 0.10
c0.10 0.18
D1.50 1.70 2, 3
E1.55 1.70
E1 1.20 BSC 2, 3
e0.50 BSC
e1 1.00 BSC
L0.35 BSC
L1 0.20 BSC
ECN: E-00499—Rev. B, 02-Jul-01
DWG: 5880
Application Note 826
Vishay Siliconix
Document Number: 72605 www.vishay.com
Revision: 21-Jan-08 21
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead
0.051
(1.300)
0.069
(1.753)
0.019
(0.478)
0.031
(0.798)
0.012
(0.300)
0.051
(0.201)
0.020
(0.500)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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Revision: 12-Mar-12 1Document Number: 91000
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