IRF140 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) 1 VDSS ID(cont) RDS(on) 100V 28A 0.077 FEATURES * HERMETICALLY SEALED TO-3 METAL PACKAGE 1.09 (0.043) 0.97 (0.038) dia. 2 plcs. 7.87 (0.310) 6.99 (0.275) 12.07 (0.475) 11.30 (0.445) 1.78 (0.070) 1.52 (0.060) 20.32 (0.800) 18.80 (0.740) dia. * SIMPLE DRIVE REQUIREMENTS * SCREENING OPTIONS AVAILABLE TO-3 Metal Package Pin 1 - Gate Pin 2 - Source Case - Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VGS Gate - Source Voltage ID Continuous Drain Current 20V (VGS = 0 , Tcase = 25C) 28A (VGS = 0 , Tcase = 100C) 20A 1 IDM Pulsed Drain Current PD Power Dissipation @ Tcase = 25C 112A Linear Derating Factor EAS Single Pulse Avalanche Energy 125W 1.0W/C 2 2 250mJ IAR Avalanche Current EAR Repetitive Avalanche Energy 2 12.5mJ dv/dt Peak Diode Recovery 3 5.5V/ns TJ , Tstg Operating and Storage Temperature Range TL Lead Temperature 28A 1.6mm (0.63") from case for 10 sec. -55 to +150C 300C Notes 1) Pulse Test: Pulse Width 300s, 2% 2) @ VDD = 25V , L 480H , RG = 25 , Peak IL = 28A , Starting TJ = 25C 3) @ ISD 28A , di/dt 170A/s , VDD BVDSS , TJ 150C , Suggested RG = 9.1 Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5349 Issue 1 IRF140 ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) VGS(th) gfs STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain - Source On-State Resistance 1 Gate Threshold Voltage Forward Transconductance 1 IDSS Zero Gate Voltage Drain Current IGSS IGSS Forward Gate - Source Leakage Reverse Gate - Source Leakage Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time BVDSS BVDSS TJ RDS(on) Test Conditions VGS = 0 ID = 1mA Reference to 25C ID = 1mA VGS = 10V ID = 20A VGS = 10V ID = 28A VDS = VGS ID = 250A VDS 15V IDS = 20A VGS = 0 VDS = 0.8BVDSS TJ = 125C VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 28A VDS = 0.5BVDSS trr Qrr ton LD LS PACKAGE CHARACTERISTICS Internal Drain Inductance (measured from 6mm down drain lead to centre of die) Internal Source Inductance (from 6mm down source lead to source bond pad) RJC RCS RJA THERMAL CHARACTERISTICS Thermal Resistance Junction - Case Thermal Resistance Case - Sink Thermal Resistance Junction - Ambient VSD Typ. Max. Unit V 100 V / C 0.13 0.077 0.089 4 2 9.1 V S 25 250 100 -100 1660 550 120 30 2.4 12 A nA pF 59 12 30.7 21 145 21 105 VDD = 50V ID = 28A RG = 9.1 SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 2 IS = 28A TJ = 25C Diode Forward Voltage 1 VGS = 0 Reverse Recovery Time IF = 28A TJ = 25C 1 Reverse Recovery Charge di / dt 100A/s VDD 50V Forward Turn-On Time IS ISM Min. () Parameter nC ns 28 112 A 1.5 V 400 2.9 ns C Negligible 5.0 13 nH 1.67 C/W 0.12 30 Notes 1) Pulse Test: Pulse Width 300ms, 2% 2) Repetitive Rating - Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5349 Issue 1