RM747 RM747 General Purpose Dual Operational Amplifier Features Description The RM747 integrated circuit is a high gain, operational amplifier internally compensated and constructed on a single silicon chip using an advanced epitaxial process. The RM747, operates over a temperature range from -55C to +125C. Combining the features of the 741 with the close parameter matching and tracking of a dual device on a monolithic chip results in unique performance characteristics. Excellent channel separation allows the use of the dual device in all single 741 operational amplifier applications providing high packaging density. It is especially well suited for applications in differential-in, differential-out as well as in potentiometric amplifiers and where gain and phase matched channels are mandatory. eee eee Short circuit protection No frequency compensation required No latch-up Large common mode and differential voltage ranges Low power consumption Parameter tracking over temperature range Gain and phase match between amplifiers For More information, call 1-800-722-7074. Raytheon Semiconductor 3-661RM747 Connection Information Ordering Information Function Output A ViA -Input A +Input A V,; +Input B -Input B +V,B Output B NC 65-0873 10-Lead TO-100 Metal Can (Top View) Pin NC 1 2 3 4 5 6 7 8 9 10 14-Lead Dual In-Line Package (Top View) re Ee i] P| 13) [I 2] E i) EI > [5] 9] C7 [2] Pin = Function 1 - Input A 2 + Input A 3 Vog Trim A 4 V, 5 Vog Trim B 6 +Input B 7 -Input B 8 Vog Trim B 9 +V, B 10 Output B 11 NC 12 Output A 13 +V,A 14 Vos Trim A 3-662 Raytheon Semiconductor Operating Part Number Package Temperature Range RM747D D 55C to +125C RM747D/883B D -55C to +125C RM747T T -55C to +125C RM747T/883B T 55C to +125C Notes: 883B suffix denotes Mil-Std-883, Level B processing D = 14-lead ceramic DIP T = 10-lead metal can TO-100 Absolute Maximum Ratings Supply Voltage PRM747 ...esscssssssnsececssscrsnecesenecaseaenrsassons +22V Differential Input Voltage ............sesesesserees 30V Input Voltage .... stemnnnneennmnnt VOM Output Short- Circuit Duration .. sestseneesese Indefinite Storage Temperature RANGE ....s-esesseescecsessenseseeans -65C to +150C Operating Temperature Range RRM747 .....esccscsessceseseseeseeees -55C to +125C Lead Soldering Temperature (GO SCC) ...ssccscssssessssssesearsenesenseessnentees +300C Notes: 1. For supply voltages less than +15V, the absolute maximum input voltage is equal to the supply voltage. For More Information, call 1-800-722-7074.Thermal Characteristics RM747 14-Lead Ceramic DIP 10-Lead TO-100 Metal Can Max. Junction Temp. +175C +175C Max. Pp Ta, <50C 1042 mw 658 mW Therm. Res 8 j 60C/W 50C/W Therm. Res. 6,4 120C/W 190C/W For T, >50C Derate at 8.33 mW/C 5.26 mW/PC Electrical Characteristics (Vg = +15V and T, = +25C unless otherwise noted) Parameters Test Conditions Min Typ Max Units Input Offset Voltage Rg $ 10kQ 1.0 5.0 mV Input Offset Current 20 200 nA Input Bias Current 80 500 nA Input Resistance (Diff. Mode) 0.3 2.0 MQ Large Signal Voltage Gain Ry 2 2 kQ, Voy = 10V 50 200 VimV Output Voltage Swing R, = 10kQ +12 +14 Ry 2 2kQ +10 13 Input Voltage Range +12 +13 Vv Common Mode Rejection Ratio] Rg s 10 kQ 70 90 dB Power Supply Rejection Ratio Rg < 10kQ 76 90 dB Power Consumption 100 170 mw Transient Response 7 Rise Time Vin = 20 mV, Ry = 2kQ 0.3 us Bs Overshoot C. = 100 pF 5.0 % 7 Stew Rate R, 22k 0.5 Vins Channel! Separation F=1kHz 98 dB For More Information, call 1-800-722-7074. Raytheon Semiconductor 3-663RM747 Electrical Characteristics (Vg = + 15V, -55C < Ta s +125C) Parameters Test Conditions Min Typ Max Units Input Offset Voltage Rg $ 10 kQ 6.0 mv Input Offset Current Ta = +125C, 200 nA Ta = +70C Ty = -55C 500 nA Ta = 0C Input Bias Current Ta = +125C, 500 nA Ta = +70C Ta = 55C, 1500 nA Tp, = 0C Large Signal Voltage Gain Ry 2 2kQ, 25 VimV Vout = 10V Output Voltage Swing R, 2 10K +12 Vv Ry 22kQ +10 Vv Common Mode Rejection Ratio |Rg < 10 kQ 70 dB Power Supply Rejection Ratio [Rg < 10 kQ 76 150 dB Power Consumption Ta = +125C 150 mw Tp = -65C 200 mw Input Voltage Range +12 Vv Typical Performance Characteristics Frequency Characteristics vs. Supply Voltage Input Offset Voltage Trim Circuit 1.4 Ta = 425C @ 12 3 Transient Response > $s 1.0 8 & 08 65-0889 0.6 +5 +10 215 #20 Note: Pin numbers shown are for +V5/-Vs (V) 14-lead packages 3-664 Raytheon Semiconductor For More Information, call 1-800-722-7074,Typical Performance Characteristics (Continued) Open Loop Gain vs. Supply Voltage 3 0 8 o 42 44 26 48 a0 212214216 #1842 +V9/-Vs (V) Common Mode Input Range vs. Supply Voltage 16 9 14 55C < Ta < +125C 12 10 = 3 2 6 4 0 o +5 +10 15 +20 +Vo/-Vs (V) Input Bias Current vs. Temperature 500 Vg = t15V 400 300 < & 200 100 2 0 3 -60 -20 +20 +60 +100 +140 T, (C) For More Information, call 1-800-722-7074. Raytheon Semiconductor RM747 Output Voltage Swing vs. Supply Voltage 40 36 32 55C s Tyas 1 22kQ 28 = 24 z 20 3 16 > 12 8 e 4 0 i +Vs/-Vs (V) Power Consumption vs. Supply Voltage 100 | | 80 - 1, 2.425% V4 s 60 LZ Or 4 we 40 1 vr. 20 k LL 3 0 8 5 +10 15 +20 +V5/-Vg (V) Input Resistance vs. Temperature 10.0 Vg = +15V J 10 =z oc & 0.1 3 ~60 -20 +20 +60 +100 +140 Ta (PC) 3-665 Tal-Y19RM747 Typical Performance Characteristics (Continued) Input Offset Current vs. Supply Voltage 40 30 Tas 425C = 20 3 10 ; ; +5 +10 415 +20 +V5/-V5 (V) Power Consumption vs. Temperature 70 Vg = + 60 Ss E 50 o 40 30 : -60 -20 +20 +60 +100 +140 TPC) Short Circuit Current vs. Temperature < E 2 60 20 +20 +60 +100 +140 TCC) 3-666 Raytheon Semiconductor Input Offset Current vs. Temperature 140 120 100 80 60 40 20 los (nA) ; -60 20 +20 +60 +100 +140 Ty (PC) Output Voltage Swing vs. Load Resistance 28 26 Vg = +1 24 Ta =+25C 22 20 18 16 14 12 10 8 0.1 1.0 1 R, (kQ) Vout pr (V) 650883 Absolute Maximum Power Dissipation vs. Temperature 600 500 400 = E 200 z 200 100 : +25 +45 +65 +85 +105 +125 TT, (CC) For More Information, call 1-800-722-7074.Typical Performance Characteristics (Continued) e, (nVVHz) Broadband Noise (Vays) Relative Vaiue For More Information, call 1-800-722-7074. Input Noise Voltage Density vs. Frequency PHTHI | Ve, = 15V 100 1 = 425C TTT] P| ry ppd || | 10 o ; 3 10 100 1K 10K 100K F (Hz) Broadband Noise Referred to Input vs. Source Resistance 100 Vg = 15V Ta = +25C 10 10-100 kHz 10-10 1 1 10- 0.1 100 1K 10K 100K Rg (Q) Frequency Characteristics vs. Temperature 1.4 Ss= t15V 1.2 ! 1.0 0.8 Closed Loop 3 3 +140 0.6 -60 +20 +60 Ta PC) 20 +100 In (PAVH2) 10 120 100 Avor (dB) Vour e-p (V) 80 60 40 20 Raytheon Semiconductor RM747 Input Noise Current Density vs. Frequency TTT 17 Vg = 15V [ Ta = 425C 7 IN NS 10 100 1K 10K 100K F (Hz) Open Loop Gain, Phase vs. Frequency 0 Vg = 18V Ta = 425C 45 Avo. Z 9 5 1350, 1 10 100 1K 10K 100K 1M 10M F (Hz) Output Voltage Swing vs. Frequency mary: 10 Vg = 15V Ta = +25 C R, = 100 KQ 65-0891 iK 10K F (Hz) 100K 1M 3-667RM747 Typical Performance Characteristics (Continued) Input Resistance, Capacitance vs. Frequency 10M 100 1M 10 Ss z oc 100K 1 10K 0.1 100 1K 10K 100K 1M F (Hz) CMRR vs. Frequency Vg = #15V Ta = +25C a z a 3 3 hs 1 10 100 1K 10K 100K 1M 10M F (Hz) Transient Response Test Circuit 1 12 2 Vout Cc RL CD Vin . Note: Pin numbers shown are for 14-lead packages 65-0896 3-668 Cu (PF) 65-0692 Rour (Q) Vour (mV) Vour (V) Raytheon Semiconductor Output Resistance vs. Frequency 600 Vg = #15V Ta = 425C 500 400 300 200 100 ; 1K 10K M F (Hz) 100K 1 0 100 Transient Response Output Voltage vs. Time 28 24 20 16 12 8 Vs = 15V Ta = 425C R.=2k2 0 C, = 100 pF : 0 os 10 15 20 25 Time (#S) Follower Large Signal Pulse Response Ouput Voltage vs. Time 10 8 Vg = 15V 6 Ta=+25C 4 2 0 -2 4 4 ~ 3 -10 0 10 20 30 40 50 60 70 80 90 Time (#S) For More Information, cali 1-800-722-7074.Typical Applications ce om, 3 820 pF o 820 pF 1% 1% yt vt 75 a D1 b2 | rs t Dk 190K AAA _ 9 VVvV 0 5 |2747 u ~ Cosine +8 4 Output R4 }& Ri 190K -15V = 190K > 1% C1 i Sr~ 820 pF f= (R1C1 = R2C2) T 1% 2PC2R2C3R3 = 65-0901 Quadrature Oscillator +15V Current Source Amplifier R13 1.5K R14 R2 1N963B _ 25.8K" 20K 1% 1% Rit 2 2 Ri2 MWA R1 WW 12K <S oi2k +15V %~y [> F1% 20K 1% Vina OW ee , Or 726 > RS Vv, >5K INB > 19%, (o} < ly 7 R3 > 20K = ~ 1% a ioe] o _ Cc = 3 * Matched to 0.1% R10 RO RB R7 150K 290 = 20 150K Vour = 100 (Vina) ( Vine ) = -15V Zero Adjust +15V Note: Pin numbers shown are for 14-lead packages 65-0002 Analog Muttiplier For More Information, call 1-800-722-7074. Raytheon Semiconductor 3-669RM747 Typical Applications (Continued) R Di R2 100K RS R pe als RI Compressor 1K +15V 1 Compressor | R4 Input O-AAA- Output 10K |? oreee o VVV- 7 Expander 172 747 SO Expander Input D4 | 8 output m= R6 1K -18V = Compressor == Expander Maximum compressor expansion ratio = R1/R (10 kQ> R 2 0) Note: Diodes D1 through D4 are matched FD6666 or equivalent 6 Compressor/Expander Amplifiers R4 2k D1 RG 6.2V Sr 10K +Vy5 R5 10K Negative 18 Posit Regulated 12 ositive gra | Vea O Reguiated O re 180K + 4 Output 12 Vv +12V it <5mA Vs R? Source or Sink Vs 5K R2 Ri 11K _ 10K - Positive Output = V,, x Bi+R2 p R2 65-0904 Negative Output = - Positive Output x #8 Note: Pin numbers shown are for 14-lead packages. Tracking Positive and Negative Voltage References 3-670 Raytheon Semiconductor For More Information, call 1-800-722-7074,Typical Applications (Continued) za = 3 < < Vn o > > < < RB R2 30K AAA VV 17 2 747 S12 ola O Vour + Trim R3 such that | Ri, Ra 7|/> R2 R4 12 747 S10 6 48 R4 Szx @ RM747 Notch Frequency vs. Capacitor C1 10K = a Notch Frequency (Hz) 8 Notch Filter Using the 747 as a Gyrator 12 2 O Vour Rw =400 MQ Cw =1pF Rours 12 BW = 1 MHz 65-0906 Unity Gain Voltage Follower R2 AAA VVV R1 1 Vin ow ~ 12 1/2 747 O Vout + R1R2 = Ri+R2 Gain R1 R2 B.W. Rin 1 10kQ] 10kQ| 1 MHz | 10kQ 10 1kQ | 10kQ [100 kHz] 1kQ 100 | 1k | 100kQ] 10kHz | 1kQ 1000 | 100 kQ] 100kQ] 1kHz | 100Q 65-0908 Inverting Amplifier For More Information, call 1-800-722-7074. Raytheon Semiconductor 10 0.0001 0.001 0.01 0.1 1.0 C, (#F) R2 AAA VvVv AW 1 tL *" 12 = 2 |v2747 O Vour Vw O=AW] + Ri R2 R1+Re2 Gain | Rt R2 B.W. Ra 10 1kQ | 9kQ [100 kHz | 400 MQ 100 100kQ19.9kQ | 10 kHz | 280MQ 1000 [100 kQ/99.9 ka} 1kHz | 8OMQ 65-0907 Non-Inverting Amplifier RI Re Vina ow Wy R2 Vine W? O Vour Linear RellR1 WR2UR3 R R Re Vour = Viva (Re) = Vina (ae) inc Cae) Note: Pin numbers shown are for 14-lead packages 65-0900 Weighted Averaging Amplifier 3-671RM747 Schematic Diagram (1/2 Shown) ' 0 +Vs5 (9,13) Qs Qe ai2 ais 4 Q14 (1,7) > Input O _ce 40K a24 , ots Ny 4 2 = +Input Qi Output 28) Gos fe 0,12) 25 pF 3 Sos a3 Ja" a4 l $ 40K s N\ cot S| 4 ~~ a7 Ko Ais {Hore (8,14) Vos Trim O t , Kar7 Qs os aio Qi aio azz Vee Ti NM os brim 5 3,5) > < ee) K {5K SK SK SKS 160 35k 4 ov Note: Pin numbers shown are for 14-lead packages 65-0871 3-672 Raytheon Semiconductor For Mora Information, call 1-800-722-7074.