SOT89 NPN SILIC ON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 - OCTOBER 1995 ✪
FEATURES
* SUITABLE FOR GE NER AL AF APPLICAT ION S AN D
CLASS B AUDIO OU TPUT STAGES UPTO 3W
* HIGH hFE AND LOW SATURATI ON VO LTAGE
COMPLEMEN TARY TY PE - BC869
PARTMARKI N G DETAI LS– BC868 - CAC
BC868-16 - CCC
BC868-25 - CDC
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 25 V
Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 2A
Continuous Collector Current IC1A
Power Dissipation at Tamb =25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage V(BR)CBO 25 V IC=100µA
Collector-Emitter
Breakdown Voltage V(BR)CEO 20 V IC=10mA*
Emitter-Base
Breakdown Voltage V(BR)EBO 5V
IE=10µA
Collector Cut-Off
Current ICBO 10
1µA
mA VCB = 25V
VCB = 25V,Tamb =150oC
Emitter Cut-Off Current IEBO 10 µAVEB=5V
Collector-Emitter
Saturation Voltage VCE(sat) 0.5 V IC=1A, IB=100mA*
Base-Emitter Turn-On
Voltage VBE(on) 1.0 V IC=1A, VCE=1V*
Static Forward Current
Transfer Ratio hFE
BC868-16
BC868-25
50
85
60
100
160
375
250
375
IC=5mA, VCE=10V*
IC=500mA, VCE=1V*
IC=1A, VCE=1V*
IC=500mA, VCE=1V*
IC=500mA, VCE=1V*
Transition Frequency fT60 MHz IC=10mA, VCE=5V
f = 35MHz
Output Capacitance Cobo 45 pF VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT449 datasheet.
BC868
3 - 11
C
C
B
E
SOT89
