2SD2396 Transistor, NPN Features available in TO-220FN package high dc current gain (he_), typically hee = 1000 low collector saturation voltage, typically Voe(saty = 0.3 V at Dimensions (Units : mm) 28D2396 (TO-220FN) 10.034 - 48 ~o1 + AZ $3.240.2 28 o91 Io/Ip =2 A/ 0.05 A * large collector power dissipation: 371 2 Po =30 Wat To = 25C #1 * easily insulated from the heat sink as o the fin is molded & * 2mm lower than ROHMS TO-220FP = ackage which allows higher densit mounting g y 254205 | | |osa205 0.75_S0s | 26205 (12) (3) a * wide safe operating area (SOA) = - ge (1). Base Applications {2) Collector * low frequency power amplifier (3) Emitter Absolute maximum ratings (Tg = 25C) Parameter Symbol Limits Unit Conditions Collector-to-base voltage | Vcpo 80 Vv Collector-to-emitter voltage Vceo 60 v Emitter-to-base voltage VEBO 6 Vv Collector current lc A _{Fontinuous (2) lop 6 A {Single pulse, Py = 100 ms 2 WwW Collector dissipation Pc 30 W |io=asG Junction temperature T; 150 C Storage temperature T stg ~55 ~ +150 C2$3D2396 Transistor, NPN, 2SD series Electrical characteristics (unless otherwise noted, T, = 25C) Parameter Symbol) Min Typical}; Max Unit Conditions Collector-to-base _ breakdown voltage BVcz0 | 80 Vi {lc =50 HA Collector-to-emitter _ breakdown voltage BVceo | 60 Vi |ic=1mA Emitter-to-base _ breakdown voltage BVEBo 6 Vi {le =50 HA Collector cutoff current lcBo 100 HA |Vcop =80V Emitter cutoff current lego 100 WHA |Vep=6V DC current gain Nee 400 1000 2000 Vee =4 V, Ic =0.5 A, single pulse | Collector-to-emitter _ . saturation voltage Vce(sat) 0.3 0.8 Vv Ic/lg = 2 A/0.05 A, single pulse Collector-to-base _ . saturation voltage. VBE(sat) 1.5 Vv Ic/lg =2 A/0.05 A, single pulse ca: Voge =5V, Ie = 0.2 A, f= 10 MHz, Transition frequency fr 40 MHz single pulse Output capacitance Cob 55 pF |Vcog=10V, Je =0A, f= 1 MHz hee rankings item H J K nee 400 ~ 800 600 ~ 1200 1000 ~ 2000 Electrical characteristic curves 40 | s 3 o 30 2 a oe . \ 5 1 S Ne heat sink ul = # 20f 3 Ta) a \ 5 a o 0.1 2 10 N 4 o Oo = a * Single Unmounted nonrepetitive 0 i 0.01 pulse Q 50 700 150 200 0 AMBIENT TEMPERATURE : Ta (C) Figure 1 COLLECTOR TO EMITTER VOLTAGE : Vce (V) Figure 2Transistor, NPN, 2SD series 2SD2396 TRANSIENT THERMAL RESISTANCE : Rth(C /W) 10000 DC CURRENT GAIN : hee 8 0 tle (A) COLLECTOR CURRENT a 4 0.001 Qo COLLECTOR TO EMITTER VOLTAGE : Vce (V) = x 001 Unmounted Infinite heat sink 0.1 10 1000 TIME = t (s) Figure 3 la=0A 1 2 Figure 5 Ta=25C 0.1 COLLECTOR CURRENT : Ic (A) Figure 7 Ss 2 1 =z iW ec a > oO & 50.1 tt -t a S Oo 0.01 418 BASE TO EMITTER VOLTAGE : Vee (V) Figure 4 To=25C Z 2 b =z du c rc > o oc oS Fe oO Li} a a Q Qa Ig=0A COLLECTOR TO EMITTER VOLTAGE : Vce (V) Figure 6 10k Ww & . 31 = oa - =z Ww ac 5 al So a COLLECTOR CURRENT Ic (A) Figure 82$D2396 Transistor, NPN, 2SD series > 1 = 1 3 3 fs ss - 3 iw 3 Ww 2 mw <i | a aie a Sw ow So >o < zea Br oOo =-2 ra Sg <> <> x Go 01 52 01 524 FE? Ee <h tke ot nt x aS S35 oO rE Ee of og Ww 4 ys 001 4 001 22 001 0.1 1 0 Sa 001 0 . 0 og COLLECTOR CURRENT : Ic (A) eo COLLECTOR CURRENT : Ie (A) Figure 9 Figure 10 1 4% 1000 2 8 z= = ~ & 3 5 5 Zz oO wu ft a & w ir te w 2 6 & = 3 2 & = e F a a =! i : 8 oF 1 9 100 EMITTER CURRENT : le (A) OOULEQTOR TO BASE VOLTAGE | Vea (Vv) Figure 11 Figure 12 Ordering information Package Bulk Basic order quantity 500 2802396 * * = Standard, x = Semi-standard, * = Special order RenmNotes @ No technical content pages of this catalog may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. @ The contents described herein are subject to change without notice. For updates of the latest information, please contact and confirm with ROHM CO.,LTD. @ Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. @ = Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. @ Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this catalog use silicon as a basic material. @ @ Products listed in this catalog are no antiradiation design. The products listed in this catalog are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order Products on this HP are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order. In case of export, please confirm if it applies to objective criteria or an informed (by MITI clause) on the basis of catch all controls for Non-Proliferation of Weapons of Mass Destruction. 1/1