MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2SD557 Features * * With TO-3 package High power audio amplifier applications NPN Silicon Power Transistors Maximum Ratings Symbol V CEO V CBO V EBO ICP IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Peak Collector Current Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 140 140 7.0 20 15 120 -55 to +150 -55 to +150 TO-3 Unit V V V A A W O C O C A N E C K D U V L H 2 1 Electrical Characteristics @ 25 C Unless Otherwise Specified O Symbol Parameter Min Max ICBO IEBO B Units Q OFF CHARACTERISTICS V (BR)CEO G Collector-Emitter Breakdown Voltage (IC=200mAdc, IB =0) Collector-Base Cutoff Current (VCB=140Vdc,IE =0) Emitter-Base Cutoff Current (VEB =7.0Vdc, IC=0) 140 --- Vdc --- 2.0 mAdc --- 5.0 mAdc PIN 1. PIN 2. CASE. BASE EMITTER COLLECTOR ON CHARACTERISTICS hFE V CE(sat)-1 V CE(sat)-2 V BE(sat) Forward Current Transfer ratio (IC=5.0Adc, VCE=4.0Vdc) Collector-Emitter Saturation Voltage (IC=10Adc, IB=1.0Adc) Collector-Emitter Saturation Voltage (IC=16Adc, IB=4.0Adc) Base-Emitter Saturation Voltage (IC=8.0Adc,VCE=2.0Vdc) 30 --- --- DIMENSIONS INCHES --- 1.0 Vdc --- 2.0 Vdc --- 1.5 Vdc DIM A B C D E G H K L N Q U V MIN 1.550 ----.250 .038 0.55 .430 .215 .440 .665 ----.151 1.187 .131 MAX REF 1.050 .335 .043 0.70 BSC BSC .480 BSC .830 .165 BSC .188 www.mccsemi.com MM MIN 39.37 ----6.35 0.97 1.40 10.92 5.46 11.18 16.89 ----3.84 30.15 3.33 MAX REF 26.67 8.51 1.09 1.77 BSC BSC 12.19 BSC 21.08 4.19 BSC 4.77 NOTE