2SD557
NPN Silicon
Power Transistors
Features
• With TO-3 package
• High power audio amplifier applications
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 140 V
VCBO Collector-Base Voltage 140 V
VEBO Emitter-Base Voltage 7.0 V
ICP Peak Collector Current 20 A
IC Collector Current 15 A
PC Collector power dissipation 120 W
TJ Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=200mAdc, IB=0) 140 --- Vdc
ICBO Collector-Base Cutoff Current
(VCB=140Vdc,IE=0) --- 2.0 mAdc
IEBO Emitter-Base Cutoff Current
(VEB=7.0Vdc, IC=0) --- 5.0 mAdc
ON CHARACTERISTICS
hFE Forward Current Transfer ratio
(IC=5.0Adc, VCE=4.0Vdc) 30 --- ---
VCE(sat)-1 Collector-Emitter Saturation Voltage
(IC=10Adc, IB=1.0Adc) --- 1.0 Vdc
VCE(sat)-2 Collector-Emitter Saturation Voltage
(IC=16Adc, IB=4.0Adc) --- 2.0 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=8.0Adc,VCE=2.0Vdc) --- 1.5 Vdc
omponents
21201 Itasca Street Chatsworth
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MCC
www.mccsemi.com
TO-3
A
N
E
D
C
K
H
V UL
G B
Q
1
2
PIN 1. BASE
PIN 2. EMITTER
CASE. COLLECTOR
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A 1.550 REF 39.37 REF
B ----- 1.050 ----- 26.67
C .250 .335 6.35 8.51
D .038 .043 0.97 1.09
E 0.55 0.70 1.40 1.77
G .430 BSC 10.92 BSC
H .215 BSC 5.46 BSC
K .440 .480 11.18 12.19
L .665 BSC 16.89 BSC
N ----- .830 ----- 21.08
Q .151 .165 3.84 4.19 ∅
U 1.187 BSC 30.15 BSC
V .131 .188 3.33 4.77
