N-Channel MOSFET 250V, 0.83A, 1.75 General Description Features The MDHT4N25 uses advanced Magnachip's MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. VDS = 250V ID = 0.83A RDS(ON) 1.75 MDHT4N25 is suitable device for SMPS, HID and general purpose applications. Applications @VGS = 10V Power Supply PFC LED TV D S D G SOT-223 Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 250 V Gate-Source Voltage VGSS 30 V 0.83 A 0.52 A 3.3 A 2.5 W 0.02 W/ oC dv/dt 5.5 V/ns EAR 0.25 mJ IAR 0.83 A EAS 52 mJ TJ, Tstg -55~150 Symbol Rating o TC=25 C Continuous Drain Current ID o TC=100 C Pulsed Drain Current(1) IDM o TC=25 C Power Dissipation o Derate above 25 C Peak Diode Recovery dv/dt(3) Repetitive Pulse Avalanche Energy(4) Avalanche current (1) (4) Single Pulse Avalanche Energy Junction and Storage Temperature Range PD o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) RJA 50 Unit o C/W *When mounted on the minimum pad size recommended (PCB Mount) Mar. 2016 Version 1.1 1 MagnaChip Semiconductor Ltd. MDHT4N25 N-channel MOSFET 250V MDHT4N25 Part Number Temp. Range Package Packing RoHS Status MDHT4N25URH -55~150oC SOT-223 Reel and Tape Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 250 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 3.0 - 5.0 IDSS VDS = 250V, VGS = 0V - - 1 A - Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance IGSS VGS = 30V, VDS = 0V RDS(ON) VGS = 10V, ID = 0.415A gfs VDS = 30V, ID = 0.415A V - 100 nA 1.38 1.75 0.91 - S - 4.2 - - 1.35 - - 1.95 - - 146 - - 3 - - Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 200V, ID = 3.6A, VGS = 10V nC Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss - 32 - Turn-On td(on) - 8 - - 21 - - 5 - tf - 16 - Maximum Continuous Drain to Source Diode Forward Current IS - 0.83 - A Source-Drain Diode Forward Voltage VSD - - 1.5 V Body Diode Reverse Recovery Time trr - 110 - ns Body Diode Reverse Recovery Charge Qrr - 0.34 - C Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(off) VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 5V, VDS = 125V, ID = 3.6A, RG = 25 pF ns Drain-Source Body Diode Characteristics IS = 0.83A, VGS = 0V IF = 3.6A, dl/dt = 100A/s(3) Note : 1. Pulse width is based on RJC & RJA and the maximum allowed junction temperature of 150C. 2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature T J(MAX)=150C. 3. ISD 3.6A, di/dt300A/us, VDDBVdss, Rg =25, Starting TJ=25C 4. L=120mH, IAS=0.83A, VDD=50V, Rg =25, Starting TJ=25C Mar. 2016 Version 1.1 2 MagnaChip Semiconductor Ltd. MDHT4N25 N-channel MOSFET 250V Ordering Information 4 Vgs=5.5V =6.0V =6.5V =7.0V =8.0V =10V =15V 4 Notes 1. 250 Pulse Test 2. TC=25 3 RDS(ON) [ ] 5 ID,Drain Current [A] MDHT4N25 N-channel MOSFET 250V 6 3 2 2 VGS=10V VGS=20V 1 1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 0 1 2 3 VDS,Drain-Source Voltage [V] 5 6 7 8 ID,Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.2 3.0 Notes : BVDSS, (Normalized) Drain-Source Breakdown Voltage Notes : 1. VGS = 10 V 2. ID =0.415A 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance 4 2.0 1.5 1.0 0.5 0.0 1. VGS = 0 V 2. ID = 250 1.1 1.0 0.9 0.8 -50 0 50 100 150 -50 0 o 50 100 150 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 Breakdown Voltage Variation vs. Temperature 10 10 IDR Reverse Drain Current [A] ID(A) * Notes ; 1. Vds=30V 1 150 25 -55 0.1 2 3 4 5 6 7 8 9 Notes : 25 0.1 0.2 10 VGS [V] 0.4 0.6 1. VGS = 0 V 2.250s Pulse test 0.8 1.0 1.2 VSD, Source-Drain Voltage [V] Fig.5 Transfer Characteristics Mar. 2016 Version 1.1 150 1 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss 50V MDHT4N25 N-channel MOSFET 250V Note : ID = 3.6A 10 VGS, Gate-Source Voltage [V] 125V 200V Ciss Capacitance [pF] 8 6 4 200 Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss 2 0 0 0 1 2 3 4 1 5 Fig.7 Gate Charge Characteristics 10 Fig.8 Capacitance Characteristics 1 2 10 Operation in This Area is Limited by R DS(on) D=0.5 100 s 0.2 1 1 ms 0 Z JC(t), Thermal Response ID, Drain Current [A] 10 10 10 ms 100 ms 1s 10 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] DC -1 10s 0.1 0.05 0.02 0 10 0.01 -1 Notes : 10 Single Pulse TJ=Max rated TC=25 10 single pulse -2 10 -2 -1 10 0 10 1 10 10 2 -5 10 -4 10 -3 10 -2 -1 10 10 0 10 1 2 10 3 10 10 t1, Rectangular Pulse Duration [sec] VDS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area Fig.10 Transient Thermal Response Curve 1.0 800 single Pulse RthJA = 50/W TC = 25 700 0.8 ID, Drain Current [A] 600 500 Power (W) Duty Factor, D=t1/t2 PEAK TJ = PDM * Z JC* R JC(t) + TC R JA=50/W 400 300 0.6 0.4 200 0.2 100 0 1E-4 1E-3 0.01 0.1 1 0.0 25 10 Fig.11 Single Pulse Maximum Power Dissipation Mar. 2016 Version 1.1 50 75 100 125 150 TC, Case Temperature [] Pulse Width (s) Fig.12 Maximum Drain Current vs. Case Temperature 4 MagnaChip Semiconductor Ltd. MDHT4N25 N-channel MOSFET 250V Physical Dimension SOT-223 Dimensions are in millimeters, unless otherwise specified Mar. 2016 Version 1.1 5 MagnaChip Semiconductor Ltd. MDHT4N25 N-channel MOSFET 250V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Mar. 2016 Version 1.1 6 MagnaChip Semiconductor Ltd. MDHT4N25 N-channel MOSFET 250V Mar. 2016 Version 1.1 7 MagnaChip Semiconductor Ltd.