EtronTech EM636165TS
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: (886)-3-5782345 FAX: (886)-3-5778671
Etron Technology, Inc. reserves the right to change products or specification without notice.
1M x 16 bit Synchronous DRAM (SDRAM)
Preliminary (Rev. 5.1, Aug. /2016)
Features
Fast access time: 4.5/5.4/5.4ns
Fast clock rate: 200/166/143 MHz
Self refresh mode: standard
Internal pipelined architecture
512K word x 16-bit x 2-bank
Programmable Mode registers
- CAS Latency: 2, or 3
- Burst Length: 1, 2, 4, 8, or full page
- Burst Type: Sequential or Interleaved
- Burst stop function
Individual byte controlled by LDQM and UDQM
Auto Refresh and Self Refresh
4096 refresh cycles/64ms
CKE power down mode
JEDEC standard +3.3V ±0.3V power supply
Operating Temperature: TA = 0~70°C
Interface: LVTTL
50-pin 400 mil plastic TSOP II package
-Pb and Halogen Free
Overview
The EM636165 SDRAM is a high-speed CMOS
synchronous DRAM containing 16 Mbits. It is internally
configured as a dual 512K word x 16 DRAM with a
synchronous interface (all signals are registered on
the positive edge of the clock signal, CLK). Each of
the 512K x 16 bit banks is organized as 2048 rows by
256 columns by 16 bits. Read and write accesses to
the SDRAM are burst oriented; accesses start at a
selected location and continue for a programmed
number of locations in a programmed sequence.
Accesses begin with the registration of a BankActivate
command which is then followed by a Read or Write
command. The EM636165 provides for programmable
Read or Write burst lengths of 1, 2, 4, 8, or full page,
with a burst termination option. An auto precharge
function may be enabled to provide a self-timed row
precharge that is initiated at the end of the burst
sequence. The refresh functions, either Auto or Self
Refresh are easy to use. By having a programmable
mode register, the system can choose the most
suitable modes to maximize its performance. These
devices are well suited for applications requiring
high memory bandwidth and particularly well suited
to high performance PC applications
Table 1. Key Specifications
EM636165
-5/6/7
tCK3
Clock Cycle time(min.)
5/6/7 ns
tRAS
Row Active time (min.)
40/42/42 ns
tAC3
Access time from CLK (max.)
4.5/5.4/5.4 ns
tRC
Row Cycle time(min.)
55/60/63 ns
Table 2. Ordering Information
Part Number
Frequency
Type
EM636165TS-5G
200MHz
TSOP II
EM636165TS-6G
166MHz
TSOP II
EM636165TS-7G
143MHz
TSOP II
TS: indicates TSOP II Package
G: indicates Pb and Halogen Free
EtronTech EM636165TS
Rev. 5.1 2 Aug. /2016
Figure 1 Pin Assignment (Top View)
1 50
VDD VSS
2 49
DQ0 DQ15
3 48
DQ1 DQ14
4 47
VSSQ VSSQ
5 46
DQ2 DQ13
6 45
DQ3 DQ12
7 44
VDDQ VDDQ
8 43
DQ4 DQ11
9 42
DQ5 DQ10
10 41
VSSQ VSSQ
11 40
DQ6 DQ9
12 39
DQ7 DQ8
13 38
VDDQ VDDQ
14 37
LDQM NC
15 36
WE# UDQM
16 35
CAS# CLK
17 34
RAS# CKE
18 33
CS# NC
19 32
A11 A9
20 31
A10/AP A8
21 30
A0 A7
22 29
A1 A6
23 28
A2 A5
24 27
A3 A4
25 26
VDD VSS
EtronTech EM636165TS
Rev. 5.1 3 Aug. /2016
Figure 2. Block Diagram
CLK
CKE
CS#
RAS#
CAS#
WE#
CLOCK
BUFFER
COMMAND
DECODER
COLUMN
COUNTER
CONTROL
SIGNAL
GENERATOR
REFRESH
COUNTER
DQs
Buffer
MODE
REGISTER
ADDRESS
BUFFER
DQ15
DQ0
~
2048x256x16
CELL ARRAY
(BANK #1)
Row
Decoder
Column Decoder
2048x256x16
CELL ARRAY
(BANK #0)
Row
Decoder
Column Decoder
LDQM, UDQM
A10/AP
A9
A11
~
A0
EtronTech EM636165TS
Rev. 5.1 4 Aug. /2016
Pin Descriptions
Table 3. Pin Details
Symbol
Description
CLK
Clock: CLK is driven by the system clock. All SDRAM input signals are sampled on
the positive edge of CLK. CLK also increments the internal burst counter and controls
the output registers.
CKE
Clock Enable: CKE activates (HIGH) and deactivates (LOW) the CLK signal. If CKE
goes low synchronously with clock (set-up and hold time same as other inputs), the
internal clock is suspended from the next clock cycle and the state of output and burst
address is frozen as long as the CKE remains low. When both banks are in the idle
state, deactivating the clock controls the entry to the Power Down and Self Refresh
modes. CKE is synchronous except after the device enters Power Down and Self
Refresh modes, where CKE becomes asynchronous until exiting the same mode. The
input buffers, including CLK, are disabled during Power Down and Self Refresh
modes, providing low standby power.
A11
Bank Activate: A11 (BA) defines to which bank the BankActivate, Read, Write, or
BankPrecharge command is being applied.
A0-A10
Address Inputs: A0-A10 are sampled during the BankActivate command (row address
A0-A10) and Read/Write command (column address A0-A7 with A10 defining Auto
Precharge) to select one location out of the 512K available in the respective bank.
During a Precharge command, A10 is sampled to determine if both banks are to be
precharged (A10 = HIGH). The address inputs also provide the op-code during a
Mode Register Set command.
CS#
Chip Select: CS# enables (sampled LOW) and disables (sampled HIGH) the command
decoder. All commands are masked when CS# is sampled HIGH. CS# provides for
external bank selection on systems with multiple banks. It is considered part of the
command code.
RAS#
Row Address Strobe: The RAS# signal defines the operation commands in conjunction
with the CAS# and WE# signals and is latched at the positive edges of CLK. When
RAS# and CS# are asserted "LOW" and CAS# is asserted "HIGH" either the Bank
Activate command or the Precharge command is selected by the WE# signal. When
the WE# is asserted "HIGH" the BankActivate command is selected and the bank
designated by BA is turned on to the active state. When the WE# is asserted "LOW"
the Precharge command is selected and the bank designated by BA is switched to the
idle state after the precharge operation.
CAS#
Column Address Strobe: The CAS# signal defines the operation commands in
conjunction with the RAS# and WE# signals and is latched at the positive edges of
CLK. When RAS# is held "HIGH" and CS# is asserted "LOW" the column access is
started by asserting CAS# "LOW". Then, the Read or Write command is selected by
asserting WE# "LOW" or "HIGH".
WE#
Write Enable: The WE# signal defines the operation commands in conjunction with
the RAS# and CAS# signals and is latched at the positive edges of CLK. The WE#
input is used to select the BankActivate or Precharge command and Read or Write
command.
LDQM,
UDQM
Data Input/Output Mask: LDQM and UDQM are byte specific, nonpersistent I/O
buffer controls. The I/O buffers are placed in a high-z state when LDQM/UDQM is
sampled HIGH. Input data is masked when LDQM/UDQM is sampled HIGH during a
write cycle. Output data is masked (two-clock latency) when LDQM/UDQM is sampled
HIGH during a read cycle. UDQM masks DQ15-DQ8, and LDQM masks DQ7-DQ0.
DQ0-DQ15
Data I/O: The DQ0-15 input and output data are synchronized with the positive edges
of CLK. The I/Os are byte-maskable during Reads and Writes.
EtronTech EM636165TS
Rev. 5.1 5 Aug. /2016
NC
No Connect: These pins should be left unconnected.
VDDQ
DQ Power: Provide isolated power to DQs for improved noise immunity. (+3.3V ±0.3V)
VSSQ
DQ Ground: Provide isolated ground to DQs for improved noise immunity.
VDD
Power Supply: (+3.3V ±0.3V)
VSS
Ground
EtronTech EM636165TS
Rev. 5.1 6 Aug. /2016
Operation Mode
Fully synchronous operations are performed to latch the commands at the positive edges of CLK. Table 4
shows the truth table for the operation commands.
Table 4. Truth Table (Note (1), (2))
Command
State
CKEn-1
CKEn
DQM(6)
A11
A10
A0-9
CS#
RAS#
CAS#
WE#
BankActivate
Idle(3)
H
X
X
V
V
V
L
L
H
H
BankPrecharge
Any
H
X
X
V
L
X
L
L
H
L
PrechargeAll
Any
H
X
X
X
H
X
L
L
H
L
Write
Active(3)
H
X
V
V
L
V
L
H
L
L
Write and AutoPrecharge
Active(3)
H
X
V
V
H
V
L
H
L
L
Read
Active(3)
H
X
V
V
L
V
L
H
L
H
Read and Autoprecharge
Active(3)
H
X
V
V
H
V
L
H
L
H
Mode Register Set
Idle
H
X
X
OP code
L
L
L
L
No-Operation
Any
H
X
X
X
X
X
L
H
H
H
Burst Stop
Active(4)
H
X
X
X
X
X
L
H
H
L
Device Deselect
Any
H
X
X
X
X
X
H
X
X
X
AutoRefresh
Idle
H
H
X
X
X
X
L
L
L
H
SelfRefresh Entry
Idle
H
L
X
X
X
X
L
L
L
H
SelfRefresh Exit
Idle
(SelfRefresh)
L
H
X
X
X
X
H
X
X
X
L
H
H
H
Clock Suspend Mode Entry
Active
H
L
X
X
X
X
H
X
X
X
L
V
V
V
Power Down Mode Entry
Any(5)
H
L
X
X
X
X
H
X
X
X
L
H
H
H
Clock Suspend Mode Exit
Active
L
H
X
X
X
X
X
X
X
X
Power Down Mode Exit
Any
(PowerDown)
L
H
X
X
X
X
H
X
X
X
L
H
H
H
Data Write/Output Enable
Active
H
X
L
X
X
X
X
X
X
X
Data Mask/Output Disable
Active
H
X
H
X
X
X
X
X
X
X
Note: 1. V=Valid, X=Don't Care, L=Low level, H=High level
2. CKEn signal is input level when commands are provided.
CKEn-1 signal is input level one clock cycle before the commands are provided.
3. These are states of bank designated by A11 signal.
4. Device state is 1, 2, 4, 8, and full page burst operation.
5. Power Down Mode can not enter in the burst operation.
When this command is asserted in the burst cycle, device state is clock suspend mode.
6. LDQM and UDQM
EtronTech EM636165TS
Rev. 5.1 7 Aug. /2016
Commands
1 BankActivate
(RAS# = "L", CAS# = "H", WE# = "H", A11 = Bank, A0-A10 = Row Address)
The BankActivate command activates the idle bank designated by the BA signals. By latching the
row address on A0 to A10 at the time of this command, the selected row access is initiated. The read
or write operation in the same bank can occur after a time delay of tRCD (min.) from the time of bank
activation. A subsequent BankActivate command to a different row in the same bank can only be
issued after the previous active row has been precharged (refer to the following figure). The minimum
time interval between successive BankActivate commands to the same bank is defined by tRC (min.).
The SDRAM has two internal banks on the same chip and shares part of the internal circuitry to
reduce chip area; therefore it restricts the back-to-back activation of the two banks. tRRD (min.)
specifies the minimum time required between activating different banks. After this command is used,
the Write command and the Block Write command perform the no mask write operation.
CLK
COMMAND
T0 T1
ADDRESS
T2 T3 Tn+3 Tn+4 Tn+5 Tn+6
RAS# - CAS# delay(tRCD) RAS# - RAS# delay time(tRRD)
RAS# - Cycle time(tRC)
AutoPrecharge
Begin
Bank A
Row Addr. Bank A
Col Addr. Bank B
Row Addr. Bank A
Row Addr.
Bank A
Activate NOP NOP R/W A with
AutoPrecharge Bank B
Activate NOP NOP Bank A
Activate
Don’t Care
Figure 3. BankActivate Command Cycle (Burst Length = n)
2 BankPrecharge command
(RAS# = "L", CAS# = "H", WE# = "L", A11 = “V”, A10 = "L", A0-A9 = Don't care)
The BankPrecharge command precharges the bank disignated by A11 signal. The precharged bank
is switched from the active state to the idle state. This command can be asserted anytime after tRAS
(min.) is satisfied from the BankActivate command in the desired bank. The maximum time any bank
can be active is specified by tRAS (max.). Therefore, the precharge function must be performed in any
active bank within tRAS (max.). At the end of precharge, the precharged bank is still in the idle state
and is ready to be activated again.
3 PrechargeAll command
(RAS# = "L", CAS# = "H", WE# = "L", A11 = Don't care, A10 = "H", A0-A9 = Don't care)
The PrechargeAll command precharges both banks simultaneously and can be issued even if both
banks are not in the active state. Both banks are then switched to the idle state.
4 Read command
(RAS# = "H", CAS# = "L", WE# = "H", A11 = “V”, A10 = "L", A0-A7 = Column Address)
The Read command is used to read a burst of data on consecutive clock cycles from an active row in
an active bank. The bank must be active for at least tRCD (min.) before the Read command is issued.
During read bursts, the valid data-out element from the starting column address will be available
following the CAS latency after the issue of the Read command. Each subsequent data-out element
will be valid by the next positive clock edge (refer to the following figure). The DQs go into high-
impedance at the end of the burst unless other command is initiated. The burst length, burst
sequence, and CAS latency are determined by the mode register, which is already programmed. A
full-page burst will continue until terminated (at the end of the page it will wrap to column 0 and
continue).
EtronTech EM636165TS
Rev. 5.1 8 Aug. /2016
CLK
COMMAND
T0 T1 T2 T3 T4 T5 T6
READ A NOP NOP NOP NOP NOP NOP NOP
T7 T8
NOP
CAS# Latency=2
tCK2, DQ
CAS# Latency=3
tCK3, DQ
DOUT A0DOUT A1DOUT A2DOUT A3
DOUT A0DOUT A1DOUT A2DOUT A3
Figure 4. Burst Read Operation (Burst Length = 4, CAS# Latency = 2, 3)
The read data appears on the DQs subject to the values on the LDQM/UDQM inputs two clocks
earlier (i.e. LDQM/UDQM latency is two clocks for output buffers). A read burst without the auto
precharge function may be interrupted by a subsequent Read or Write command to the same bank or
the other active bank before the end of the burst length. It may be interrupted by a BankPrecharge/
PrechargeAll command to the same bank too. The interrupt coming from the Read command can
occur on any clock cycle following a previous Read command (refer to the following figure).
CLK
COMMAND
T0 T1 T2 T3 T4 T5 T6
READ A READ B NOP NOP NOP NOP NOP NOP
T7 T8
NOP
CAS# Latency=2
tCK2, DQ
CAS# Latency=3
tCK3, DQ
DOUT A0DOUT B0DOUT B1DOUT B2
DOUT A0DOUT B0DOUT B1DOUT B2
DOUT B3
DOUT B3
Figure 5. Read Interrupted by a Read (Burst Length = 4, CAS# Latency = 2, 3)
The LDQM/UDQM inputs are used to avoid I/O contention on the DQ pins when the interrupt comes
from a Write command. The LDQM/UDQM must be asserted (HIGH) at least two clocks prior to the
Write command to suppress data-out on the DQ pins. To guarantee the DQ pins against I/O
contention, a single cycle with high-impedance on the DQ pins must occur between the last read data
and the Write command (refer to the following three figures). If the data output of the burst read
occurs at the second clock of the burst write, the LDQM/UDQM must be asserted (HIGH) at least one
clock prior to the Write command to avoid internal bus contention.
CLK
COMMAND
T0 T1 T2 T3 T4 T5 T6
NOP NOP Bank A
Activate NOP NOP READ A WRITE A NOP
T7 T8
NOP
CAS# Latency=2
tCK2, DQ
DQM
T9
NOP
DIN A0DIN A1DIN A2DIN A3
Figure 6. Read to Write Interval (Burst Length 4, CAS# Latency = 2)
EtronTech EM636165TS
Rev. 5.1 9 Aug. /2016
CLK
COMMAND
T0 T1 T2 T3 T4 T5 T6
NOP NOP READ A NOP NOP WRITE B NOP NOP
T7 T8
NOP
DQM
DIN B0DIN B1DIN B2DIN B3
CAS# Latency=2
tCK2, DQ Must be Hi-Z before
the Write Command Don’t Care
Figure 7. Read to Write Interval (Burst Length 4, CAS# Latency = 2)
CLK
COMMAND
T0 T1 T2 T3 T4 T5 T6
NOP READ A NOP NOP NOP NOP WRITE B NOP
T7 T8
NOP
DQM
DOUT A0DIN B0DIN B1DIN B2
CAS# Latency=3
tCK3, DQ Must be Hi-Z before
the Write Command Don’t Care
Figure 8. Read to Write Interval (Burst Length ≧ 4, CAS# Latency = 3)
A read burst without the auto precharge function may be interrupted by a Bank Precharge/Precharge
All command to the same bank. The following figure shows the optimum time that Bank Precharge/
Precharge All command is issued in different CAS latency.
CLK
COMMAND
T0 T1 T2 T3 T4 T5 T6
READ A NOP NOP NOP Precharge NOP NOP Activate
T7 T8
NOP
CAS# Latency=2
tCK2, DQ
CAS# Latency=3
tCK3, DQ
DOUT A0DOUT A1DOUT A2DOUT A3
DOUT A0DOUT A1DOUT A2DOUT A3
ADDRESS Bank,
Col A Bank (s) Bank
Row
tRP
Figure 9. Read to Precharge (CAS# Latency = 2, 3)
EtronTech EM636165TS
Rev. 5.1 10 Aug. /2016
5 Read and AutoPrecharge command
(RAS# = "H", CAS# = "L", WE# = "H", A11 = “V”, A10 = "H", A0-A7 = Column Address)
The Read and AutoPrecharge command automatically performs the precharge operation after the
read operation. Once this command is given, any subsequent command cannot occur within a time
delay of
{
tRP (min.) + burst length
}
. At full-page burst, only the read operation is performed in this
command and the auto precharge function is ignored.
6 Write command
(RAS# = "H", CAS# = "L", WE# = "L", A11 = “V”, A10 = "L", A0-A7 = Column Address)
The Write command is used to write a burst of data on consecutive clock cycles from an active row
in an active bank. The bank must be active for at least tRCD (min.) before the Write command is
issued. During write bursts, the first valid data-in element will be registered coincident with the Write
command. Subsequent data elements will be registered on each successive positive clock edge
(refer to the following figure). The DQs remain with high-impedance at the end of the burst unless
another command is initiated. The burst length and burst sequence are determined by the mode
register, which is already programmed. A full-page burst will continue until terminated (at the end of
the page it will wrap to column 0 and continue).
CLK
DQ
T0 T1 T2 T3 T4 T5 T6
DIN A0DIN A1DIN A2DIN A3don’t care
T7 T8
COMMAND NOP WRITE A NOP NOP NOP NOP NOP NOP NOP
The first data element and the write
are registered on the same clock edge
Figure 10. Burst Write Operation (Burst Length = 4)
A write burst without the auto precharge function may be interrupted by a subsequent Write,
BankPrecharge/PrechargeAll, or Read command before the end of the burst length. An interrupt
coming from Write command can occur on any clock cycle following the previous Write command
(refer to the following figure).
CLK
DQ
T0 T1 T2 T3 T4 T5 T6
DIN A0DIN B0DIN B1DIN B2DIN B3
T7 T8
COMMAND NOP WRITE A WRITE B NOP NOP NOP NOP NOP NOP
Figure 11. Write Interrupted by a Write (Burst Length = 4)
The Read command that interrupts a write burst without auto precharge function should be issued
one cycle after the clock edge in which the last data-in element is registered. In order to avoid data
contention, input data must be removed from the DQs at least one clock cycle before the first read
data appears on the outputs (refer to the following figure). Once the Read command is registered, the
data inputs will be ignored and writes will not be executed.
EtronTech EM636165TS
Rev. 5.1 11 Aug. /2016
CLK
COMMAND
T0 T1 T2 T3 T4 T5 T6
NOP WRITE A READ B NOP NOP NOP NOP NOP
T7 T8
NOP
CAS# Latency=2
tCK2, DQ
CAS# Latency=3
tCK3, DQ
DOUT B0DOUT B1DOUT B2DOUT B3
DOUT B0DOUT B1DOUT B2DOUT B3
DIN A0don’t care
DIN A0don’t care don’t care
Input data must be removed from the DQ at
least one clock cycle before the Read data
appears on the outputs to avoid data contention
Figure 12. Write Interrupted by a Read (Burst Length = 4, CAS# Latency = 2, 3)
The BankPrecharge/PrechargeAll command that interrupts a write burst without the auto precharge
function should be issued m cycles after the clock edge in which the last data-in element is registered,
where m equals tWR/tCK rounded up to the next whole number. In addition, the LDQM/UDQM signals
must be used to mask input data, starting with the clock edge following the last data-in element and
ending with the clock edge on which the BankPrecharge/PrechargeAll command is entered (refer to
the following figure).
CLK
COMMAND
T0 T1 T2 T3 T4 T5 T6
WRITE NOP NOP Precharge NOP NOP Activate NOP
T7
DQM
Don’t Care
ADDRESS Bank
Col n Bank (s) ROW
tRP
DIN
nDIN
N+1
tWR
DQ
Note: The LDQM/UDQM can remain low in this example if the length of the write burst is 1 or 2.
Figure 13. Write to Precharge
7 Write and AutoPrecharge command (refer to the following figure)
(RAS# = "H", CAS# = "L", WE# = "L", A11 = “V”, A10 = "H", A0-A7 = Column Address)
The Write and AutoPrecharge command performs the precharge operation automatically after the
write operation. Once this command is given, any subsequent command can not occur within a time
delay of
{
(burst length -1) + tWR + tRP (min.)
}
. At full-page burst, only the write operation is performed
in this command and the auto precharge function is ignored.
CLK
DQ
T0 T1 T2 T3 T4 T5 T6
DIN A0DIN A1
T7 T8
COMMAND Bank A
Activate NOP NOP WRITE A
Auto Precharge NOP NOP NOP NOP NOP
T9
Bank A
Activate
tDAL=tWR+tRP
tDAL
Begin AutoPrecharge
Bank can be reactivated at
completion of tDAL
Figure 14. Burst Write with Auto-Precharge (Burst Length = 2)
EtronTech EM636165TS
Rev. 5.1 12 Aug. /2016
8 Mode Register Set command
(RAS# = "L", CAS# = "L", WE# = "L", A11 = “V”, A10 = “V”, A0-A9 = Register Data)
The mode register stores the data for controlling the various operating modes of SDRAM. The Mode
Register Set command programs the values of CAS latency, Addressing Mode and Burst Length in
the Mode register to make SDRAM useful for a variety of different applications. The default values of
the Mode Register after power-up are undefined; therefore this command must be issued at the
power-up sequence. The state of pins A0~A9 and A11 in the same cycle is the data written to the
mode register. Two clock cycles are required to complete the write in the mode register (refer to the
following figure). The contents of the mode register can be changed using the same command and
the clock cycle requirements during operation as long as both banks are in the idle state.
Table 5. Mode Register Bitmap
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
0
RFU*
WBL
Test Mode
CAS Latency
BT
Burst Length
A9
Write Burst Length
A8
A7
Test Mode
A3
Burst Type
0
Burst
0
0
Normal
0
Sequential
1
Single Bit
1
0
Vendor Use Only
1
Interleave
0
1
Vendor Use Only
A6
A5
A4
CAS Latency
A2
A1
A0
Burst Length
0
0
0
Reserved
0
0
0
1
0
0
1
Reserved
0
0
1
2
0
1
0
2 clocks
0
1
0
4
0
1
1
3 clocks
0
1
1
8
1
0
0
Reserved
1
1
1
Full Page (Sequential)
All other Reserved
All other Reserved
*Note: RFU (Reserved for future use) should stay “0” during MRS cycle.
CLK
CS#
T0 T1 T2 T3 T4 T5 T6 T7
CKE
Don’t Care
RAS#
tMRD
CAS#
T8 T9 T10
WE#
A11
A10
A0-A9
DQM
DQ tRP
PrechargeAll Mode Register
Set Command Any
Command
Hi-Z
Address Key
Figure 15. Mode Register Set Cycle
EtronTech EM636165TS
Rev. 5.1 13 Aug. /2016
Burst Length Field (A2~A0)
This field specifies the data length of column access using the A2~A0 pins and selects the Burst
Length to be 1, 2, 4, 8, or full page.
Table 6. Burst length
A2
A1
A0
Burst Length
0
0
0
1
0
0
1
2
0
1
0
4
0
1
1
8
1
0
0
Reserved
1
0
1
Reserved
1
1
0
Reserved
1
1
1
Full Page
Addressing Mode Select Field (A3)
The Addressing Mode can be one of two modes, Interleave Mode or Sequential Mode. Sequential
Mode supports burst length of 1, 2, 4, 8, or full page, but Interleave Mode only supports burst
length of 4 and 8.
Table 7. Addressing Mode Select Field
A3
Addressing Mode
0
Sequential
1
Interleave
Burst Definition, Addressing Sequence of Sequential and Interleave Mode
Table 8. Burst Definition
Burst
Length
Start Address
Sequential
Interleave
A2
A1
A0
2
X
X
0
0, 1
0, 1
X
X
1
1, 0
1, 0
4
X
0
0
0, 1, 2, 3
0, 1, 2, 3
X
0
1
1, 2, 3, 0
1, 0, 3, 2
X
1
0
2, 3, 0, 1
2, 3, 0, 1
X
1
1
3, 0, 1, 2
3, 2, 1, 0
8
0
0
0
0, 1, 2, 3, 4, 5, 6, 7
0, 1, 2, 3, 4, 5, 6, 7
0
0
1
1, 2, 3, 4, 5, 6, 7, 0
1, 0, 3, 2, 5, 4, 7, 6
0
1
0
2, 3, 4, 5, 6, 7, 0, 1
2, 3, 0, 1, 6, 7, 4, 5
0
1
1
3, 4, 5, 6, 7, 0, 1, 2
3, 2, 1, 0, 7, 6, 5, 4
1
0
0
4, 5, 6, 7, 0, 1, 2, 3
4, 5, 6, 7, 0, 1, 2, 3
1
0
1
5, 6, 7, 0, 1, 2, 3, 4
5, 4, 7, 6, 1, 0, 3, 2
1
1
0
6, 7, 0, 1, 2, 3, 4, 5
6, 7, 4, 5, 2, 3, 0, 1
1
1
1
7, 0, 1, 2, 3, 4, 5, 6
7, 6, 5, 4, 3, 2, 1, 0
Full page
location = 0-255
n, n+1, n+2, n+3, …255, 0,
1, 2, … n-1, n, …
Not Support
EtronTech EM636165TS
Rev. 5.1 14 Aug. /2016
CAS Latency Field (A6~A4)
This field specifies the number of clock cycles from the assertion of the Read command to the first
read data. The minimum whole value of CAS Latency depends on the frequency of CLK. The
minimum whole value satisfying the following formula must be programmed into this field.
tCAC (min) CAS Latency X tCK
Table 9. CAS Latency
A6
A5
A4
CAS Latency
0
0
0
Reserved
0
0
1
Reserved
0
1
0
2 clocks
0
1
1
3 clocks
1
X
X
Reserved
Test Mode field (A8~A7)
These two bits are used to enter the test mode and must be programmed to "00" in normal operation.
Table 10. Test Mode field
A8
A7
Test Mode
0
0
normal mode
0
1
Vendor Use Only
1
X
Vendor Use Only
Write Burst Length (A9)
This bit is used to select the write burst length. When the A9 bit is "0", the Burst-Read-Burst-Write
mode is selected. When the A9 bit is "1", the Burst-Read-Single-Write mode is selected.
Table 11. Write Burst Length
A9
Write Burst Length
0
Burst-Read-Burst-Write
1
Burst-Read-Single-Write
Note: A11 should stay “L” during mode set cycle.
9 No-Operation command
(RAS# = "H", CAS# = "H", WE# = "H")
The No-Operation command is used to perform a NOP to the SDRAM which is selected (CS# is Low).
This prevents unwanted commands from being registered during idle or wait states.
10 Burst Stop command
(RAS# = "H", CAS# = "H", WE# = "L")
The Burst Stop command is used to terminate either fixed-length or full-page bursts. This command
is only effective in a read/write burst without the auto precharge function. The terminated read burst
ends after a delay equal to the CAS latency (refer to the following figure). The termination of a write
burst is shown in the following figure.
EtronTech EM636165TS
Rev. 5.1 15 Aug. /2016
CLK
COMMAND
T0 T1 T2 T3 T4 T5 T6
READ A NOP NOP NOP Burst
Stop NOP NOP NOP
T7 T8
NOP
CAS# Latency=2
tCK2, DQ
CAS# Latency=3
tCK3, DQ
DOUT A0DOUT A1DOUT A2DOUT A3
DOUT A0DOUT A1DOUT A2DOUT A3
The burst ends after a delay equal to the CAS# Latency
Figure 16. Termination of a Burst Read Operation (Burst Length ＞ 4, CAS# Latency = 2, 3)
CLK
DQ
T0 T1 T2 T3 T4 T5 T6
DIN A0DIN A1DIN A2don’t care
T7 T8
COMMAND NOP WRITE A NOP NOP Burst
Stop NOP NOP NOP NOP
Figure 17. Termination of a Burst Write Operation (Burst Length = X)
11 Device Deselect command
(CS# = "H")
The Device Deselect command disables the command decoder so that the RAS#, CAS#, WE# and
Address inputs are ignored, regardless of whether the CLK is enabled. This command is similar to
the No Operation command.
12 AutoRefresh command
(RAS# = "L", CAS# = "L", WE# = "H", CKE = "H", A0-A11 = Don't care)
The AutoRefresh command is used during normal operation of the SDRAM and is analogous to
CAS#-before-RAS# (CBR) Refresh in conventional DRAMs. This command is non-persistent, so it
must be issued each time a refresh is required. The addressing is generated by the internal refresh
controller. This makes the address bits a "don't care" during an AutoRefresh command. The internal
refresh counter increments automatically on every auto refresh cycle to all of the rows. The refresh
operation must be performed 4096 times within 64ms. The time required to complete the auto refresh
operation is specified by tRC (min.). To provide the AutoRefresh command, both banks need to be in
the idle state and the device must not be in power down mode (CKE is high in the previous cycle).
This command must be followed by NOPs until the auto refresh operation is completed. The
precharge time requirement, tRP (min), must be met before successive auto refresh operations are
performed.
13 SelfRefresh Entry command
(RAS# = "L", CAS# = "L", WE# = "H", CKE = "L", A0-A11 = Don't care)
The SelfRefresh is another refresh mode available in the SDRAM. It is the preferred refresh mode for
data retention and low power operation. Once the SelfRefresh command is registered, all the inputs
to the SDRAM become "don't care" with the exception of CKE, which must remain LOW. The refresh
addressing and timing is internally generated to reduce power consumption. The SDRAM may
remain in SelfRefresh mode for an indefinite period. The SelfRefresh mode is exited by restarting the
external clock and then asserting HIGH on CKE (SelfRefresh Exit command).
EtronTech EM636165TS
Rev. 5.1 16 Aug. /2016
14 SelfRefresh Exit command
(CKE = "H", CS# = "H" or CKE = "H", RAS# = "H", CAS# = "H", WE# = "H")
This command is used to exit from the SelfRefresh mode. Once this command is registered, NOP or
Device Deselect commands must be issued for tXSR (min.) because time is required for the
completion of any bank currently being internally refreshed. If auto refresh cycles in bursts are
performed during normal operation, a burst of 4096 auto refresh cycles should be completed just
prior to entering and just after exiting the SelfRefresh mode.
15 Clock Suspend Mode Entry / PowerDown Mode Entry command (CKE = "L")
When the SDRAM is operating the burst cycle, the internal CLK is suspended (masked) from the
subsequent cycle by issuing this command (asserting CKE "LOW"). The device operation is held
intact while CLK is suspended. On the other hand, when both banks are in the idle state, this
command performs entry into the PowerDown mode. All input and output buffers (except the CKE
buffer) are turned off in the PowerDown mode. The device may not remain in the Clock Suspend or
PowerDown state longer than the refresh period (64ms) since the command does not perform any
refresh operations.
16 Clock Suspend Mode Exit / PowerDown Mode Exit command (CKE= "H")
When the internal CLK has been suspended, the operation of the internal CLK is reinitiated from the
subsequent cycle by providing this command (asserting CKE "HIGH"). When the device is in the
PowerDown mode, the device exits this mode and all disabled buffers are turned on to the active
state. tPDE (min.) is required when the device exits from the PowerDown mode. Any subsequent
commands can be issued after one clock cycle from the end of this command.
17 Data Write / Output Enable, Data Mask / Output Disable command (LDQM/UDQM = "L", "H")
During a write cycle, the LDQM/UDQM signal functions as a Data Mask and can control every word
of the input data. During a read cycle, the LDQM/UDQM functions as the controller of output buffers.
LDQM/UDQM is also used for device selection, byte selection and bus control in a memory system.
LDQM controls DQ0 to DQ7, UDQM controls DQ8 to DQ15.
EtronTech EM636165TS
Rev. 5.1 17 Aug. /2016
Table 12. Absolute Maximum Rating
Symbol
Item
Values
Unit
Note
VIN, VOUT
Input, Output Voltage
-1.0 ~ 4.6
V
1
VDD, VDDQ
Power Supply Voltage
-1.0 ~ 4.6
V
1
TA
Ambient Temperature
0 ~ 70
°C
1
TSTG
Storage Temperature
-55 ~ 150
°C
1
TSOLDER
Soldering Temperature
260
°C
1
PD
Power Dissipation
1
W
1
IOS
Short Circuit Output Current
50
mA
1
Table 13. Recommended D.C. Operating Conditions (VDD = 3.3V 0.3V, TA = 0~70
°
C)
Symbol
Parameter
Min.
Max.
Unit
Note
VDD
Power Supply Voltage
3.0
3.6
V
2
VDDQ
Power Supply Voltage(for I/O Buffer)
3.0
3.6
V
2
VIH
Input High Voltage
2.0
VDDQ + 0.3
V
2
VIL
Input Low Voltage
-0.3
0.8
V
2
IIL
Input Leakage Current
( 0V VIN VDD, All other pins not under test = 0V )
-10
10
A
IOZ
Output Leakage Current
Output disable, 0V VOUT VDDQ)
-10
10
A
VOH
Output "H" Level Voltage (IOUT = -2mA)
2.4
-
V
VOL
Output "L" Level Voltage (IOUT = 2mA)
-
0.4
V
Table 14. Capacitance (VDD = 3.3V, TA = 25
°
C)
Symbol
Parameter
Min.
Max.
Unit
CI
Input Capacitance
2
5
pF
CI/O
Input/Output Capacitance
4
7
pF
Note: These parameters are periodically sampled and are not 100% tested.
EtronTech EM636165TS
Rev. 5.1 18 Aug. /2016
Table 15. D.C. Characteristics (VDD = 3.3V 0.3V, TA = 0~70
°
C)
Description/Test condition
Symbol
-5
-6
-7
Unit
Note
Max.
Operating Current
tRC tRC(min), Outputs Open
One bank active
IDD1
55
50
45
mA
3
Precharge Standby Current in non-power down mode
tCK = 15ns, CS# VIH(min), CKE VIH
Input signals are changed every 2clks
IDD2N
25
25
25
Precharge Standby Current in power down mode
tCK = 15ns, CKE VIL(max)
IDD2P
2
2
2
Precharge Standby Current in power down mode
tCK = , CKE VIL(max)
IDD2PS
2
2
2
Active Standby Current in non-power down mode
tCK = 15ns, CKE VIH(min), CS# VIH(min)
Input signals are changed every 2clks
IDD3N
30
30
30
Active Standby Current in non-power down mode
CKE VIH(min), CLK VIL(max), tCK =
IDD3NS
25
25
25
Operating Current (Burst mode)
tCK=tCK(min), Outputs Open, Multi-bank interleave
IDD4
80
75
70
3, 4
Refresh Current
tRC tRC(min)
IDD5
65
60
55
3
Self Refresh Current
CKE 0.2V ; for other inputs VIH≧VDD - 0.2V, VIL 0.2V
IDD6
2
2
2
EtronTech EM636165TS
Rev. 5.1 19 Aug. /2016
Table 16. Electrical Characteristics and Recommended A.C. Operating Conditions
(VDD = 3.3V±0.3V, TA = 0~70
°
C) (Note: 5, 6, 7, 8)
Symbol
A.C. Parameter
-5
-6
-7
Unit
Note
Min.
Max.
Min.
Max.
Min.
Max.
tRC
Row cycle time (same bank)
55
-
60
-
63
-
9
tRCD
RAS# to CAS# delay
(same bank)
15
-
18
-
21
-
9
tRP
Precharge to refresh/row activate
command (same bank)
15
-
18
-
21
-
ns
9
tRRD
Row activate to row activate delay
(different banks)
10
-
12
-
14
-
9
tRAS
Row activate to precharge time
(same bank)
40
100K
42
100K
42
100K
tWR
Write recovery time
2
-
2
-
2
-
tCK
tCK
Clock cycle time
CL* = 2
-
-
7.5
-
8
-
ns
10
CL* = 3
5
-
6
-
7
-
tCH
Clock high time
2
-
2.5
-
2.5
-
11
tCL
Clock low time
2
-
2.5
-
2.5
-
tAC
Access time from CLK
(positive edge)
CL* = 2
-
-
-
6
-
6.5
CL* = 3
-
4.5
-
5.4
-
5.4
tCCD
CAS# to CAS# Delay time
1
-
1
-
1
-
tCK
tOH
Data output hold time
2
-
2
-
2
-
ns
10
tLZ
Data output low impedance
1
-
1
-
1
-
tHZ
Data output high impedance
-
4.5
-
5.4
-
5.4
8
tIS
Data/Address/Control Input set-up time
2
-
2
-
2
-
11
tIH
Data/Address/Control Input hold time
0.8
-
0.8
-
0.8
-
11
tPDE
PowerDown Exit set-up time
tIS+tCK
-
tIS+tCK
-
tIS+tCK
-
tCK
tREFI
Refresh Interval Time
-
15.6
-
15.6
-
15.6
s
tXSR
Exit Self-Refresh to any Command
tRC+tIS
-
tRC+tIS
-
tRC+tIS
-
ns
* CL is CAS Latency.
Note:
1. Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device. Absolute maximum DC requirements contain stress ratings only. Functional operation at the
absolute maximum limits is not implied or guaranteed. Extended exposure to maximum ratings may affect
device reliability.
2. All voltages are referenced to VSS. VIH (Max) = 4.6V for pulse width ≤ 3ns.VIL (Min) = -1.0V for pulse
width ≤ 3ns.
3. These parameters depend on the cycle rate and these values are measured by the cycle rate under the
minimum value of tCK and tRC. Input signals are changed one time during every 2 tCK.
4. These parameters depend on the output loading. Specified values are obtained with the output open.
5. Power-up sequence is described in Note 12.
EtronTech EM636165TS
Rev. 5.1 20 Aug. /2016
6. A.C. Test Conditions
Table 17. LVTTL Interface
Reference Level of Output Signals
1.4V / 1.4V
Output Load
Reference to the Under Output Load (B)
Input Signal Levels
2.4V / 0.4V
Transition Time (Rise and Fall) of Input Signals
1ns
Reference Level of Input Signals
1.4V
Output
1.2KΩ
30pF
3.3V
870Ω
Output Z0=50Ω
50Ω
30pF
1.4V
Figure 18.1 LVTTL D.C. Test Load (A) Figure 18.2 LVTTL A.C. Test Load (B)
7. Transition times are measured between VIH and VIL. Transition (rise and fall) of input signals are in a fixed
slope (1 ns).
8. tHZ defines the time in which the outputs achieve the open circuit condition and are not at reference levels.
9. These parameters account for the number of clock cycle and depend on the operating frequency of the
clock as follows: the number of clock cycles = specified value of timing/Clock cycle time (count fractions
as a whole number)
10. If clock rising time is longer than 1 ns, ( tR / 2 -0.5) ns should be added to the parameter.
11. Assumed input rise and fall time tT (tR & tF) = 1 ns
If tR or tF is longer than 1 ns, transient time compensation should be considered, i.e., [(tr + tf)/2 - 1] ns
should be added to the parameter.
12. Power up Sequence
Power up must be performed in the following sequence.
1) Power must be applied to VDD and VDDQ (simultaneously) when CKE= “L”, DQM= “H” and all input
signals are held "NOP" state.
2) Start clock and maintain stable condition for minimum 200 s, then bring CKE= “H” and, it is
recommended that DQM is held "HIGH" (VDD levels) to ensure DQ output is in high impedance.
3) All banks must be precharged.
4) Mode Register Set command must be asserted to initialize the Mode register.
5) A minimum of 2 Auto-Refresh dummy cycles must be required to stabilize the internal circuitry of the
device.
* The Auto Refresh command can be issue before or after Mode Register Set command.
EtronTech EM636165TS
Rev. 5.1 21 Aug. /2016
Timing Waveforms
Figure 19. AC Parameters for Write Timing (Burst Length=4)
T0 T1 T2
Don’t Care
tCH
Activate
Command
Bank A
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
tCL
Begin Auto
Precharge Bank B
RAx RBx RAy
RAx CAx RBx CBx RAy CAy
Ax0 Ax1 Ax2 Ax3 Bx0 Bx1 Bx2 Bx3 Ay0 Ay1 Ay2 Ay3
tRCD tRC
tDAL tWR
Write with
Auto Precharge
Command
Bank A
Activate
Command
Bank B
Write with
Auto Precharge
Command
Bank B
Activate
Command
Bank A
Write
Command
Bank A
Precharge
Command
Bank A
tIS tIS tIH
tIH
tIS
Begin Auto
Precharge Bank A
tIS tIH
Hi-Z
CLK
CS#
CKE
RAS#
CAS#
WE#
A11
A10
A0-A9
DQM
DQ
EtronTech EM636165TS
Rev. 5.1 22 Aug. /2016
Figure 20. AC Parameters for Read Timing (Burst Length=2, CAS# Latency=2)
Hi-Z
CLK
CS#
T0 T1 T2
CKE
Don’t Care
RAS#
tCH
CAS#
WE#
A11
A10
A0-A9
DQM
DQ
Activate
Command
Bank A
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16
tCL
Begin Auto
Precharge Bank B
RAx RBx
RAx CAx RBx CBx RAy
RAy
Ax0 Ax1
tRRD
tRC
Read
Command
Bank A
Activate
Command
Bank B
Read with
Auto Precharge
Command
Bank B
Activate
Command
Bank A
tIS tIH
tIH
tIS
tIS tIH
tRAS
tRCD tAC
tLZ tHZ
Bx0 Bx1
tHZ
tRP
Precharge
Command
Bank A
tOH
EtronTech EM636165TS
Rev. 5.1 23 Aug. /2016
Figure 21. Auto Refresh (Burst Length=4, CAS# Latency=2)
T0 T1 T2
Don’t Care
Precharge All
Command
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
RAx
CAxRAx
Ax0 Ax1
tRP tRC
Auto Refresh
Command Auto Refresh
Command
Activate
Command
Bank A
Read
Command
Bank A
tRC tRCD
CLK
CS#
CKE
RAS#
CAS#
WE#
A11
A10
A0-A9
DQM
DQ
EtronTech EM636165TS
Rev. 5.1 24 Aug. /2016
Figure 22. Power on Sequene and Auto Refresh
Hi-Z
T0 T1 T2
Don’t Care
Inputs must be
Stable for
200μs
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
tMRD
Mode Register
Set Command
High Level
Is reguired Minimum for 2 Refresh Cycles are required
tRP
Precharge All
Command 1st Auto Refresh(*)
Command 2nd Auto Refresh(*)
Command
Any
Command
Note(*): The Auto Refresh command can be issue before or after Mode Register Set command
CLK
CS#
CKE
RAS#
CAS#
WE#
A11
A10
A0-A9
DQM
DQ
Address Key
EtronTech EM636165TS
Rev. 5.1 25 Aug. /2016
Figure 23. Self Refresh Entry & Exit Cycle
CLK
CS#
T0 T1 T2
CKE
Don’t Care
RAS#
CAS#
WE#
A11
A10
A0-A9
DQM
DQ
Self Refresh Entry
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19
Self Refresh Exit Auto Refresh
tIS
Hi-Z
tIS tIH
*Note 1 *Note 2
*Note 3,4 tPDE
*Note 5
*Note 6
*Note 7
tXSR *Note 8
Hi-Z
*Note 9
Note: To Enter SelfRefresh Mode
1. CS#, RAS# & CAS# with CKE should be low at the same clock cycle.
2. After 1 clock cycle, all the inputs including the system clock can be don't care except for CKE.
3. The device remains in SelfRefresh mode as long as CKE stays "low".
4. Once the device enters SelfRefresh mode, minimum tRAS is required before exit from SelfRefresh.
To Exit SelfRefresh Mode
5. System clock restart and be stable before returning CKE high.
6. Enable CKE and CKE should be set high for valid setup time and hold time.
7. CS# starts from high.
8. Minimum tXSR is required after CKE going high to complete SelfRefresh exit.
9. 4096 cycles of burst AutoRefresh is required before SelfRefresh entry and after SelfRefresh exit if the
system uses burst refresh.
EtronTech EM636165TS
Rev. 5.1 26 Aug. /2016
Figure 24.1. Clock Suspension During Burst Read (Using CKE)
(Burst Length=4, CAS# Latency=2)
Hi-Z
T0 T1 T2
Don’t Care
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
RAx
RAx CAx
Activate
Command
Bank A
Read
Command
Bank A
Ax0 Ax1 Ax2 Ax3
tHZ
Clock Suspend
1 Cycle Clock Suspend
2 Cycles Clock Suspend
3 Cycles
CLK
CS#
CKE
RAS#
CAS#
WE#
A11
A10
A0-A9
DQM
DQ
EtronTech EM636165TS
Rev. 5.1 27 Aug. /2016
Figure 24.2. Clock Suspension During Burst Read (Using CKE)
(Burst Length=4, CAS# Latency=3)
Hi-Z
T0 T1 T2
Don’t Care
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
RAx
RAx CAx
Activate
Command
Bank A
Read
Command
Bank A
Ax0 Ax1 Ax2 Ax3
tHZ
Clock Suspend
1 Cycle Clock Suspend
2 Cycles Clock Suspend
3 Cycles
CLK
CS#
CKE
RAS#
CAS#
WE#
A11
A10
A0-A9
DQM
DQ
EtronTech EM636165TS
Rev. 5.1 28 Aug. /2016
Figure 25. Clock Suspension During Burst Write (Using CKE)
(Burst Length=4)
Hi-Z
T0 T1 T2
Don’t Care
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
RAx
RAx CAx
Activate
Command
Bank A Write
Command
Bank A
Clock Suspend
1 Cycle Clock Suspend
2 Cycles Clock Suspend
3 Cycles
CLK
CS#
CKE
RAS#
CAS#
WE#
A11
A10
A0-A9
DQM
DQ DAx0 DAx1 DAx2 DAx3
EtronTech EM636165TS
Rev. 5.1 29 Aug. /2016
Figure 26. Power Down Mode and Clock Suspension (Burst Length=4, CAS# Latency=2)
Hi-Z
T0 T1 T2
Don’t Care
Activate
Command
Bank A
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
tIS
Power Down
Mode Exit
tPDE
Power Down
Mode Entry
Read
Command
Bank A
Clock Suspension
Start Power Down
Mode Exit
tIH
RAx
RAx CAx
Ax0 Ax1 Ax3Ax2
ACTIVE
STANDBY Clock Suspension
End
Precharge
Command
Bank A
Power Down
Mode Entry
PRECHARGE
STANDBY
Any
Command
Valid
tHZ
CLK
CS#
CKE
RAS#
CAS#
WE#
A11
A10
A0-A9
DQM
DQ
EtronTech EM636165TS
Rev. 5.1 30 Aug. /2016
Figure 27.1. Random Column Read (Page within same Bank)
(Burst Length=4, CAS# Latency=2)
Hi-Z
T0 T1 T2
Don’t Care
Activate
Command
Bank A
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Read
Command
Bank A
RAw
RAw CAx
Aw0 Aw1 Ay2
Precharge
Command
Bank A
CLK
RAz
CAw CAy RAz CAz
Aw2 Aw3 Ax0 Ax1 Ay0 Ay1 Ay3 Az0
Read
Command
Bank A
Read
Command
Bank A
Activate
Command
Bank A
Read
Command
Bank A
CS#
CKE
RAS#
CAS#
WE#
A11
A10
A0-A9
DQM
DQ
EtronTech EM636165TS
Rev. 5.1 31 Aug. /2016
Figure 27.2. Random Column Read (Page within same Bank)
(Burst Length=4, CAS# Latency=3)
Hi-Z
T0 T1 T2
Don’t Care
Activate
Command
Bank A
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Read
Command
Bank A
RAw
RAw CAx
Aw0 Aw1 Ay2
Precharge
Command
Bank A
CLK
RAz
CAw CAy RAz CAz
Aw2 Aw3 Ax0 Ax1 Ay0 Ay1 Ay3
Read
Command
Bank A
Read
Command
Bank A
Activate
Command
Bank A
Read
Command
Bank A
CS#
CKE
RAS#
CAS#
WE#
A11
A10
A0-A9
DQM
DQ
EtronTech EM636165TS
Rev. 5.1 32 Aug. /2016
Figure 28. Random Column Write (Page within same Bank)
(Burst Length=4)
Hi-Z
T0 T1 T2
Don’t Care
Activate
Command
Bank B
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Write
Command
Bank B
RBw
RBw CBx
DBw0 DBw1 DBy2
Precharge
Command
Bank B
CLK
RBz
CBw CBy RBz CBz
DBw2 DBw3 DBx0 DBx1 DBy0 DBy1 DBy3
Write
Command
Bank B
Write
Command
Bank B
Activate
Command
Bank B
Write
Command
Bank B
CS#
CKE
RAS#
CAS#
WE#
A11
A10
A0-A9
DQM
DQ DBz0 DBz1
EtronTech EM636165TS
Rev. 5.1 33 Aug. /2016
Figure 29.1. Random Row Read (Interleaving Banks)
(Burst Length=8, CAS# Latency=2)
Hi-Z
T0 T1 T2
Don’t Care
Activate
Command
Bank B
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Read
Command
Bank B
RBx
RBx RAx
Bx0 Bx1 Ax0
Precharge
Command
Bank B
CLK
RBy
CBx CAx RBy CBy
Bx2 Bx3 Bx4 Bx5 Bx6 Bx7 Ax1
Activate
Command
Bank A
Read
Command
Bank A
Activate
Command
Bank B
Read
Command
Bank B
CS#
CKE
WE#
A10
Ax6 Ax7
High
RAx
Ax2 Ax3 Ax4 Ax5
tRCD tAC tRP
A0-A9
DQM
DQ
A11
RAS#
CAS#
EtronTech EM636165TS
Rev. 5.1 34 Aug. /2016
Figure 29.2. Random Row Read (Interleaving Banks)
(Burst Length=8, CAS# Latency=3)
Hi-Z
T0 T1 T2
Don’t Care
Activate
Command
Bank B
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Read
Command
Bank B
RBx
RBx RAx
Bx0 Bx1 Ax0
Precharge
Command
Bank B
CLK
RBy
CBx CAx RBy CBy
Bx2 Bx3 Bx4 Bx5 Bx6 Bx7 Ax1
Activate
Command
Bank A
Read
Command
Bank A
Activate
Command
Bank B
Read
Command
Bank B
CS#
CKE
WE#
A10
Ax6 Ax7
High
RAx
Ax2 Ax3 Ax4 Ax5
tRCD tAC tRP
A0-A9
DQM
DQ
A11
RAS#
CAS#
Precharge
Command
Bank A
By0
EtronTech EM636165TS
Rev. 5.1 35 Aug. /2016
Figure 30. Random Row Write (Interleaving Banks)
(Burst Length=8)
Hi-Z
T0 T1 T2
Don’t Care
Activate
Command
Bank A
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Write
Command
Bank A
RAx
RAx RBx
DAx3 DAx4 DBx3
Precharge
Command
Bank A
CLK
RAy
CAx CBx RAy CAy
DAx5 DAx6 DAx7 DBx0 DBx1 DBx2 DBx4
Activate
Command
Bank B
Write
Command
Bank B
Activate
Command
Bank A
Write
Command
Bank A
CS#
CKE
WE#
A10
DAy1 DAy2
High
RBx
DBx5 DBx6 DBx7 DAy0
tRCD tRP
A0-A9
DQM
DQ
A11
RAS#
CAS#
Precharge
Command
Bank B
DAy3
tWR* tWR*
DAx0 DAx1 DAx2
*tWR>tWR (min.)
EtronTech EM636165TS
Rev. 5.1 36 Aug. /2016
Figure 31.1. Read and Write Cycle (Burst Length=4, CAS# Latency=2)
Hi-Z
T0 T1 T2
Don’t Care
Activate
Command
Bank A
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Read
Command
Bank A
RAx
RAx
DAy1
CLK
CAx CAz
Ax0 Ax1 Ax2 Ax3 DAy0
Write
Command
Bank A
The Write Data
is Masked with a
Zero Clock
Latency
Read
Command
Bank A
The Read Data
is Masked with a
Two Clock
Latency
CS#
CKE
RAS#
CAS#
WE#
A11
A10
A0-A9
DQM
DQ Az1 Az3
CAy
DAy3 Az0
EtronTech EM636165TS
Rev. 5.1 37 Aug. /2016
Figure 31.2. Read and Write Cycle (Burst Length=4, CAS# Latency=3)
Hi-Z
T0 T1 T2
Don’t Care
Activate
Command
Bank A
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Read
Command
Bank A
RAx
RAx
DAy1
CLK
CAx CAz
Ax0 Ax1 Ax2 Ax3 DAy0
Write
Command
Bank A
The Write Data
is Masked with a
Zero Clock
Latency Read
Command
Bank A
The Read Data
is Masked with a
Two Clock
Latency
CS#
CKE
RAS#
CAS#
WE#
A11
A10
A0-A9
DQM
DQ Az1 Az3
CAy
DAy3 Az0
EtronTech EM636165TS
Rev. 5.1 38 Aug. /2016
Figure 32.1. Interleaving Column Read Cycle (Burst Length=4, CAS# Latency=2)
Hi-Z
T0 T1 T2
Don’t Care
Activate
Command
Bank A
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Read
Command
Bank A
RAx
RAx RBx
Ax0 Ax1 By0
Read
Command
Bank A
CLK
RBx
CAy CBw
Ax2 Ax3 Bw0 Bw1 Bx0 Bx1 By1
Activate
Command
Bank B
Read
Command
Bank B
Read
Command
Bank B
Precharge
Command
Bank B
CS#
CKE
RAS#
CAS#
WE#
A11
A10
A0-A9
DQM
DQ Bz2 Bz3
CBx CBy CAy CBz
tRCD
tAC
Read
Command
Bank B
Read
Command
Bank B
Bz0Ay0 Ay1 Bz1
Precharge
Command
Bank A
EtronTech EM636165TS
Rev. 5.1 39 Aug. /2016
Figure 32.2. Interleaved Column Read Cycle (Burst Length=4, CAS# Latency=3)
Hi-Z
T0 T1 T2
Don’t Care
Activate
Command
Bank A
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Read
Command
Bank A
RAx
RAx RBx
Ax0 Ax1 Bz0
Precharge
Command
Bank B
CLK
RBx
CAx CBx
Ax2 Ax3 Bx0 Bx1 By0 By1 Bz1
Activate
Command
Bank B
Read
Command
Bank B
Precharge
Command
Bank A
CS#
CKE
RAS#
CAS#
WE#
A11
A10
A0-A9
DQM
DQ
CBy CBz CAy
tRCD
tAC
Read
Command
Bank B
Read
Command
Bank A
Ay2Ay0 Ay1 Ay3
Read
Command
Bank B
EtronTech EM636165TS
Rev. 5.1 40 Aug. /2016
Figure 33. Interleaved Column Write Cycle (Burst Length=4)
Hi-Z
T0 T1 T2
Don’t Care
Activate
Command
Bank A
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Write
Command
Bank A
RAx
RAx RBw
DAx0 DAx1 DBy0
Write
Command
Bank B
CLK
RBw
CAx CBw
DAx2 DAx3 DBw0 DBw1 DBx0 DBx1 DBy1
Activate
Command
Bank B
Write
Command
Bank B Precharge
Command
Bank A
CS#
CKE
RAS#
CAS#
WE#
A11
A10
A0-A9
DQM
DQ
CBx CBy CAy
tRCD
Write
Command
Bank B
Write
Command
Bank A
DBz0DAy0 DAy1 DBz1
Write
Command
Bank B
CBz
tRRD>tRRD (min)
tWR tWR
DBz2 DBz3
Precharge
Command
Bank B
EtronTech EM636165TS
Rev. 5.1 41 Aug. /2016
Figure 34.1. Auto Precharge after Read Burst (Burst Length=4, CAS# Latency=2)
Hi-Z
T0 T1 T2
Don’t Care
Activate
Command
Bank A
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Read
Command
Bank A
RAx
RAx CBx
Ax0 Ax1 Bx0
Read with
Auto precharge
Command
Bank A
CLK
RAz
CAx CAy RBy CBy
Ax2 Ax3 Bx1
Activate
Command
Bank B
Read with
Auto Precharge
Command
Bank B
Activate
Command
Bank B
Activate
Command
Bank A
CS#
CKE
WE#
A10
Ay2 Ay3
High
RBx
Bx2 Bx3 Ay0 Ay1
tRP
A0-A9
DQM
DQ
A11
RAS#
CAS#
RBy
RBx RAz
By2By0 By1
Read with
Auto Precharge
Command
Bank B
Begin Auto
Precharge
Bank B
Begin Auto
Precharge
Bank A
EtronTech EM636165TS
Rev. 5.1 42 Aug. /2016
Figure 34.2. Auto Precharge after Read Burst (Burst Length=4, CAS# Latency=3)
Hi-Z
T0 T1 T2
Don’t Care
Activate
Command
Bank A
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Read
Command
Bank A
RAx
RAx RBx
Bx2
RBx
CAx CBx
Ax0 Ax1 Ax2 Ax3 Bx0 Bx1 Bx3
Activate
Command
Bank B
Read with
Auto Precharge
Command
Bank A
Read with
Auto Precharge
Command
Bank B
CAy
Activate
Command
Bank B
Ay2Ay0 Ay1 Ay3
Read with
Auto Precharge
Command
Bank B
RBy
tRP
Begin Auto
Precharge
Bank B
Begin Auto
Precharge
Bank A
RBy
CBy
By2By0 By1
CLK
CS#
CKE
RAS#
CAS#
WE#
A11
A10
A0-A9
DQM
DQ
High
EtronTech EM636165TS
Rev. 5.1 43 Aug. /2016
Figure 35. Auto Precharge after Write Burst (Burst Length=4)
Hi-Z
T0 T1 T2
Don’t Care
Activate
Command
Bank A
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Write
Command
Bank A
RAx
RAx RBx
DBx2
RBx
CAx CBx
DAx0 DAx1 DAx2 DAx3 DBx0 DBx1 DBx3
Activate
Command
Bank B
Write with
Auto Precharge
Command
Bank A
Write with
Auto Precharge
Command
Bank B
CAy
Activate
Command
Bank B
DAy2DAy0 DAy1 DAy3
Write with
Auto Precharge
Command
Bank B
RBy
tDAL
Begin Auto
Precharge
Bank B
Begin Auto
Precharge
Bank A
RBy
CBy
DBy2DBy0 DBy1
CLK
CS#
CKE
WE#
A11
A10
DQM
DQ
High
DBy3
RAS#
CAS#
A0-A9
EtronTech EM636165TS
Rev. 5.1 44 Aug. /2016
Figure 36.1. Full Page Read Cycle (Burst Length=Full Page, CAS# Latency=2)
Hi-Z
T0 T1 T2
Don’t Care
Activate
Command
Bank A
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Read
Command
Bank A
RAx
RAx
Ax+1
RBx
CAx RBx
Ax Ax+1 Ax+2 Ax-2 Ax-1 Ax Bx
Activate
Command
Bank B
Read
Command
Bank B
Precharge
Command
Bank B
CBx
Burst Stop
Command
Bx+3Bx+1 Bx+2 Bx+4
The burst counter wraps
from the highest order
page address back to zero
during this time interval
tRP
RBy
RBy
Bx+5 Bx+6
CLK
CS#
CKE
WE#
A10
DQ
High
Full Page burst operation does not
terminate when the burst length is satisfied;
the burst counter increments and continues
bursting beginning with the starting address
Activate
Command
Bank B
RAS#
CAS#
A11
A0-A9
DQM
EtronTech EM636165TS
Rev. 5.1 45 Aug. /2016
Figure 36.2. Full Page Read Cycle (Burst Length=Full Page, CAS# Latency=3)
Hi-Z
T0 T1 T2
Don’t Care
Activate
Command
Bank A
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Read
Command
Bank A
RAx
RAx
Ax+1
RBx
CAx RBx
Ax Ax+1 Ax+2 Ax-2 Ax-1 Ax Bx
Activate
Command
Bank B
Read
Command
Bank B
Precharge
Command
Bank B
CBx
Burst Stop
Command
Bx+3Bx+1 Bx+2 Bx+4
The burst counter wraps
from the highest order
page address back to zero
during this time interval
tRP
RBy
RBy
Bx+5
CLK
CS#
CKE
WE#
A10
DQ
High
Full Page burst operation does not
terminate when the burst length is satisfied;
the burst counter increments and continues
bursting beginning with the starting address
Activate
Command
Bank B
RAS#
CAS#
A11
A0-A9
DQM
EtronTech EM636165TS
Rev. 5.1 46 Aug. /2016
Figure 37. Full Page Write Cycle (Burst Length=Full Page)
Hi-Z
T0 T1 T2
Don’t Care
Activate
Command
Bank A
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Write
Command
Bank A
RAx
RAx
DAx+1
RBx
CAx RBx
DAx DAx+1 DAx+2 DAx+3 DAx-1 DAx DBx
Activate
Command
Bank B
Write
Command
Bank B
Precharge
Command
Bank B
CBx
Burst Stop
Command
DBx+3DBx+1 DBx+2 DBx+4
The burst counter wraps
from the highest order
page address back to zero
during this time interval
RBy
RBy
DBx+5
CLK
CS#
CKE
WE#
A10
DQ
High
Full Page burst operation does not
terminate when the burst length is satisfied;
the burst counter increments and continues
bursting beginning with the starting address
Activate
Command
Bank B
RAS#
CAS#
A11
A0-A9
DQM
Data is ignored
EtronTech EM636165TS
Rev. 5.1 47 Aug. /2016
Figure 38. Byte Read and Write Operation (Burst Length=4, CAS# Latency=2)
T0 T1 T2
Don’t Care
Activate
Command
Bank A
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Read
Command
Bank A
RAx
RAx CAx
Upper Byte
is masked Write
Command
Bank A Lower Byte
is masked
CAy
Read
Command
Bank A
Lower Byte
is masked
CAz
CLK
CS#
CKE
WE#
A10
DQ8-DQ15
High
Lower Byte
is masked
RAS#
CAS#
A11
A0-A9
LDQM
UDQM
Ax0 Ax1 Ax2 DAy1 Day2 Az1 Az2
DQ0-DQ7
Ax1 Ax2 Ax3 DAy0 DAy3DAy1 Az0 Az1 Az2 Az3
Upper Byte
is masked
EtronTech EM636165TS
Rev. 5.1 48 Aug. /2016
Figure 39. Random Row Read (Interleaving Banks)
(Burst Length=4, CAS# Latency=2)
T0 T1 T2
Don’t Care
Activate
Command
Bank B
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Read
Bank B
with Auto
Precharge
RBu
RBu RAu
Bv0
RAu
CBu CAu
Bu0 Bu1 Bu2 Bu3 Au0 Au1 Bv1
Activate
Command
Bank A
Activate
Command
Bank B
Read
Bank A
with Auto
Precharge
RBv
Activate
Command
Bank A
Av0Bv2 Bv3 Av1
Read
Bank A
with Auto
Precharge
CBv
tRP
Begin Auto
Precharge
Bank A
Begin Auto
Precharge
Bank B
RAv
CAv
CLK
CS#
CKE
WE#
A10
DQM
DQ
High Begin Auto
Precharge
Bank B
Begin Auto
Precharge
Bank A
RBw
RBv RAv RBw
tRP tRP
Read
Bank B
with Auto
Precharge
Au2 Au3 Av2 Av3
Activate
Command
Bank B
RAS#
CAS#
A11
A0-A9
EtronTech EM636165TS
Rev. 5.1 49 Aug. /2016
Figure 40. Full Page Random Column Read (Burst Length=Full Page, CAS# Latency=2)
Hi-Z
T0 T1 T2
Don’t Care
Activate
Command
Bank A
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Activate
Command
Bank B
RAx
CAx
By1
RBx
RBx CAy
Ax0 Ax1 Bx0 Ay0 Ay1 By0 Az0
Read
Command
Bank A
Read
Command
Bank B
Precharge
Command Bank B
(Precharge Temination)
CAz
Read
Command
Bank A
Bz0Az1 Az2 Bz1
Read
Command
Bank A
CBz
tRP
RBw
RBw
Bz2
CLK
CS#
CKE
RAS#
CAS#
WE#
A10
DQM
DQ
RAx CBx CBy
tRRD tRCD
Read
Command
Bank B
Read
Command
Bank B
Activate
Command
Bank B
A11
A0-A9
EtronTech EM636165TS
Rev. 5.1 50 Aug. /2016
Figure 41. Full Page Random Column Write (Burst Length=Full Page)
Hi-Z
T0 T1 T2
Don’t Care
Activate
Command
Bank A
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Activate
Command
Bank B
RAx
CAx
DBy1
RBx
RBx CAy
DAx0 DAx1 DBx0 DAy0 DAy1 DBy0 DAz0
Write
Command
Bank A
Write
Command
Bank B
Precharge
Command Bank B
(Precharge Temination)
CAz
Write
Command
Bank A
DBz0DAz1 DAz2 DBz1
Write
Command
Bank A
CBz
tRP
RBw
RBw
DBz2
CLK
CS#
CKE
RAS#
CAS#
WE#
A10
DQM
DQ
RAx CBx CBy
tRRD tRCD
Write
Command
Bank B
Write
Command
Bank B
Activate
Command
Bank B
A11
A0-A9
tWR
Write Data
are masked
EtronTech EM636165TS
Rev. 5.1 51 Aug. /2016
Figure 42. Precharge Termination of a Burst
(Burst Length=4, 8 or Full Page, CAS# Latency=3)
T0 T1 T2
Don’t Care
Activate
Command
Bank B
T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
RAx
RAx
Ay0
CAx
DAx0 DAx1 Ay1
Write
Command
Bank A
Activate
Command
Bank A
Activate
Command
Bank A
RAy
Precharge
Command
Bank A
Ay2
Precharge
Command
Bank A
CAy
tWR
RAz
CLK
CS#
CKE
WE#
A10
DQM
DQ
High
RAz
RAy
tRP
Read
Command
Bank A
Precharge Termination
of a Read Burst
tRP
Precharge Termination
of a Write Burst
Write Data are masked
A0-A9
RAS#
CAS#
A11
EtronTech EM636165TS
Rev. 5.1 52 Aug. /2016
Figure 43. 50 Pin TSOP II Package Outline Drawing Information
y
50
1D
E
HE
0.254

L
L1
A
A1A2
S B eLL1
C
25
26
Symbol
Dimension in inch
Dimension in mm
Min
Normal
Max
Min
Normal
Max
A
－
－
0.047
－
－
1.20
A1
0.002
0.005
0.008
0.05
0.125
0.20
A2
0.035
0.039
0.043
0.9
1.0
1.1
B
0.008
－
0.018
0.2
－
0.45
c
－
0.006
－
－
0.155
－
D
0.82
0.825
0.83
20.82
20.95
21.08
E
0.395
0.400
0.405
10.03
10.16
10.29
e
－
0.031
－
－
0.80
－
HE
0.455
0.463
0.471
11.56
11.76
11.96
L
0.016
0.020
0.024
0.40
0.50
0.60
L1
－
0.0315
－
－
0.80
－
S
－
0.035
－
－
0.88
－
y
－
－
0.004
－
－
0.10
0
－
8
0
－
8
Notes:
1. Dimension D&E do not include interlead flash.
2. Dimension B does not include dambar protrusion/intrusion.
3. Dimension S includes end flash.
4. Controlling dimension: mm