FDMS86263P P-Channel PowerTrench(R) MOSFET -150 V, -22 A, 53 m Features General Description Max rDS(on) = 53 m at VGS = -10 V, ID = -4.4 A Max rDS(on) = 64 m at VGS = -6 V, ID = -4 A Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Qg This P-Channel MOSFET is produced using Fairchild Semiconductor`s advanced PowerTrench(R) technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance. This product is optimised for fast switching applications as well as load switch applications Applications 100% UIL tested Active Clamp Switch RoHS Compliant Load Switch Bottom Top Pin 1 S D D D S S G D S D S D S D G D Power 56 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 C -Continuous TA = 25 C ID TJ, TSTG 25 V (Note 1a) -4.4 A -70 Single Pulse Avalanche Energy PD Units V -22 -Pulsed EAS Ratings -150 (Note 3) Power Dissipation TC = 25 C Power Dissipation TA = 25 C 384 104 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W C Thermal Characteristics RJC Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient 1.2 (Note 1a) 50 C/W Package Marking and Ordering Information Device Marking FDMS86263P Device FDMS86263P (c)2014 Fairchild Semiconductor Corporation FDMS86263P Rev.C2 Package Power 56 1 Reel Size 13 '' Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS86263P P-Channel PowerTrench(R) MOSFET October 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 A, VGS = 0 V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = -250 A, referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = -120 V, VGS = 0 V -1 A IGSS Gate to Source Leakage Current VGS = 25 V, VDS = 0 V 100 nA -4 V -150 V -116 mV/C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 A, referenced to 25 C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance -2 -2.9 7 mV/C VGS = -10 V, ID = -4.4 A 42 53 VGS = -6 V, ID = -4 A 45 64 VGS = -10 V, ID = -4.4 A,TJ = 125 C 71 94 VDS = -10 V, ID = -4.4 A 19 m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -75 V, VGS = 0 V, f = 1 MHz 0.1 2935 3905 pF 238 315 pF 11 20 pF 2.7 5.4 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to -10 V Qg Total Gate Charge VGS = 0 V to -6 V Qgs Gate to Source Charge Qgd Gate to Drain "Miller" Charge VDD = -75 V, ID = -4.4 A, VGS = -10 V, RGEN = 6 VDD = -75 V, ID = -4.4 A 17 31 ns 10 21 ns 37 59 ns 14 25 ns 45 63 nC 29 40 nC 11.3 nC 8.9 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -4.4 A (Note 2) -0.79 -1.3 VGS = 0 V, IS = -2 A (Note 2) -0.75 -1.2 IF = -4.4 A, di/dt = 100 A/s V 91 146 ns 287 460 nC Notes: 1. RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50 C/W when mounted on a 1 in2 pad of 2 oz copper b) 125 C/W when mounted on a minimum pad of 2 oz copper. SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. Starting TJ = 25 C; P-ch: L = 3 mH, IAS = -16 A, VDD = -150 V, VGS = -10 V. 100% test at L = 0.1 mH, IAS = -52 A. (c)2014 Fairchild Semiconductor Corporation FDMS86263P Rev.C2 2 www.fairchildsemi.com FDMS86263P P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted 4 -ID, DRAIN CURRENT (A) VGS = -10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 70 VGS = -6 V 56 VGS = -5.5 V 42 VGS = -5 V 28 14 0 VGS = -4.5 V 0 1 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 2 3 4 5 VGS = -4.5 V 3 VGS = -5 V 2 VGS = -5.5 V 1 0 0 14 Figure 1. On Region Characteristics 140 rDS(on), DRAIN TO 1.8 1.6 1.4 1.2 1.0 0.8 0.6 SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = -4.4 A VGS = -10 V 0.4 -75 -25 0 25 50 75 70 ID = -4.4 A 100 TJ = 125 oC 80 60 TJ = 25 oC 40 100 125 150 3 4 5 6 7 8 9 10 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) Figure 4. On-Resistance vs Gate to Source Voltage Figure 3. Normalized On Resistance vs Junction Temperature 100 -IS, REVERSE DRAIN CURRENT (A) 70 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX -ID, DRAIN CURRENT (A) 56 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 120 20 -50 42 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.2 56 VDS = -10 V 42 TJ = 150 oC 28 TJ = 25 oC 14 TJ = -55 oC 0 28 VGS = -10 V -ID, DRAIN CURRENT (A) -VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 VGS = -6 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 2 3 4 5 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 6 0.2 0.4 0.6 0.8 1.0 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2014 Fairchild Semiconductor Corporation FDMS86263P Rev.C2 3 1.2 www.fairchildsemi.com FDMS86263P P-Channel PowerTrench(R) MOSFET c Typical Characteristics TJ = 25 C unless otherwise noted 10000 Ciss VDD = -50 V ID = -4.4 A 8 VDD = -75 V CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = -100 V 4 1000 Coss 100 Crss 10 2 f = 1 MHz VGS = 0 V 0 0 10 20 30 40 1 0.1 50 1 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics 40 o RJC = 1.2 C/W -ID, DRAIN CURRENT (A) -IAS, AVALANCHE CURRENT (A) 100 Figure 8. Capacitance vs Drain to Source Voltage 100 TJ = 25 oC TJ = 100 oC 10 TJ = 125 oC 1 0.001 0.01 0.1 1 10 30 20 VGS = -10 V Limited by Package VGS = -6 V 10 0 25 100 50 75 100 125 150 o TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 200 30000 P(PK), PEAK TRANSIENT POWER (W) 10 s 100 -ID, DRAIN CURRENT (A) 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) SINGLE PULSE RJC = 1.2 oC/W 10000 100 s 10 THIS AREA IS LIMITED BY rDS(on) 1 ms SINGLE PULSE TJ = MAX RATED 1 RJC = 1.2 oC/W o TC = 25 C 10 ms CURVE BENT TO MEASURED DATA DC 0.1 1 10 100 400 -VDS, DRAIN to SOURCE VOLTAGE (V) 1000 100 50 -5 10 -4 10 -3 10 -2 10 -1 10 1 t, PULSE WIDTH (sec) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area (c)2014 Fairchild Semiconductor Corporation FDMS86263P Rev.C2 TC = 25 oC 4 www.fairchildsemi.com FDMS86263P P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: ZJC(t) = r(t) x RJC RJC = 1.2 oC/W Peak TJ = PDM x ZJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.005 -5 10 -4 10 -3 -2 10 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve (c)2014 Fairchild Semiconductor Corporation FDMS86263P Rev.C2 5 www.fairchildsemi.com FDMS86263P P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS FRFET(R) SM Global Power Resource GreenBridge Green FPS Green FPS e-Series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and BetterTM MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax MotionGrid(R) MTi(R) MTx(R) MVN(R) mWSaver(R) OptoHiT OPTOLOGIC(R) AccuPower AttitudeEngineTM Awinda(R) AX-CAP(R)* BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficientMax ESBC (R) (R) Fairchild Fairchild Semiconductor(R) FACT Quiet Series FACT(R) FastvCore FETBench FPS OPTOPLANAR(R) (R) Power Supply WebDesigner PowerTrench(R) PowerXSTM Programmable Active Droop QFET(R) QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a timeTM SignalWise SmartMax SMART START Solutions for Your Success SPM(R) STEALTH SuperFET(R) SuperSOT-3 SuperSOT-6 SuperSOT-8 SupreMOS(R) SyncFET Sync-LockTM (R)* TinyBoost(R) TinyBuck(R) TinyCalc TinyLogic(R) TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT(R)* SerDes UHC(R) Ultra FRFET UniFET VCX VisualMax VoltagePlus XSTM XsensTM (R) * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. AUTHORIZED USE Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability. This product may not be used in the following applications, unless specifically approved in writing by a Fairchild officer: (1) automotive or other transportation, (2) military/aerospace, (3) any safety critical application - including life critical medical equipment - where the failure of the Fairchild product reasonably would be expected to result in personal injury, death or property damage. Customer's use of this product is subject to agreement of this Authorized Use policy. In the event of an unauthorized use of Fairchild's product, Fairchild accepts no liability in the event of product failure. In other respects, this product shall be subject to Fairchild's Worldwide Terms and Conditions of Sale, unless a separate agreement has been signed by both Parties. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Terms of Use Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I77 (c) Fairchild Semiconductor Corporation www.fairchildsemi.com Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor: FDMS86263P