October 2014
©2014 Fairchild Semiconductor Corporation
FDMS86263P Rev.C2 www.fairchildsemi.com
1
FDMS86263P P-Channel PowerTrench® MOSFET
FDMS86263P
P-Channel PowerTrench® MOSFET
-150 V, -22 A, 53 mΩ
Features
Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A
Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A
V ery low Rds-on in Mid-Voltage P-Channel silicon technology
optimized for low Qg
This product is optimised for fast switching applications as
well as load switch applications
100% UIL tested
RoHS Compliant
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® technology. This
very high density process is especially tailored to minimize
on-state resistance and optimized for superior switching
performance.
Applications
Active Clamp Switch
Load Switch
Power 56 D
DDD
G
SSS
Pin 1
Bottom
Top S
S
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage -150 V
VGS Gate to Source Voltage ±25 V
ID
Drain Current -Continuous TC = 25 °C -22 A -Continuous T A = 25 °C (Note 1a) -4.4
-Pulsed -70
EAS Single Pulse Avalanche Energy (Note 3) 384 mJ
PDPower Dissipation TC = 25 °C 104 W
Power Dissipation TA = 25 °C (Note 1a) 2.5
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJC Thermal Resistance, Junction to Case 1.2 °C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDMS86263P FDMS86263P Power 56 13 ’’ 12 mm 3000 units
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2
©2014 Fairchild Semiconductor Corporation
FDMS86263P Rev.C2
FDMS86263P P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V -150 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient ID = -250 μA, referenced to 25 °C -116 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = -120 V, VGS = 0 V -1 μA
IGSS Gate to Source Leakage Current VGS = ±25 V, VDS = 0 V ±100 nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA-2-2.9-4V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = -250 μA, referenced to 25 °C 7 mV/°C
rDS(on) Static Drain to Source On Resistance VGS = -10 V, ID = -4.4 A 42 53 mΩVGS = -6 V, ID = -4 A 45 64
VGS = -10 V, ID = -4.4 A,TJ = 125 °C 71 94
gFS Forward Transconductance VDS = -10 V, ID = -4.4 A 19 S
Ciss Input Capacitance VDS = -75 V, VGS = 0 V,
f = 1 MHz
2935 3905 pF
Coss Output Capacitance 238 315 pF
Crss Reverse Transfer Capacitance 11 20 pF
RgGate Resistance 0.1 2.7 5.4 Ω
td(on) Turn-On Delay Time VDD = -75 V, ID = -4.4 A,
VGS = -10 V, RGEN = 6 Ω
17 31 ns
trRise Time 10 21 ns
td(off) Turn-Off Delay Time 37 59 ns
tfFall Time 14 25 ns
QgTotal Gate Charge VGS = 0 V to -10 V VDD = -75 V,
ID = -4.4 A
45 63 nC
QgTotal Gate Charge VGS = 0 V to -6 V 29 40 nC
Qgs Gate to Source Charge 11.3 nC
Qgd Gate to Drain “Miller” Charge 8.9 nC
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = -4.4 A (Note 2) -0.79 -1.3 V
VGS = 0 V, IS = -2 A (Note 2) -0.75 -1.2
trr Reverse Recovery Time IF = -4.4 A, di/dt = 100 A/μs 91 146 ns
Qrr Reverse Recovery Charge 287 460 nC
Notes:
1. RθJA is determined with the de vice mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; P-ch: L = 3 mH, IAS = -16 A, VDD = -150 V, VGS = -10 V. 100% test at L = 0.1 mH, IAS = -52 A.
G
DF
DS
SF
SS
50 °C/W when mounted on a
1 in2 pad of 2 oz copper
G
DF
DS
SF
SS
125 °C/W wh en mounted on a
minimum pad of 2 oz copper.
a) b)
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3
©2014 Fairchild Semiconductor Corporation
FDMS86263P Rev.C2
FDMS86263P P-Channel PowerTrench® MOSFET
c
Typical Characteristics TJ = 25 °C unless otherwise noted
Figure 1.
012345
0
14
28
42
56
70
VGS = -5 V
VGS = -4.5 V
VGS = -6 V
PULSE D UR A TION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = - 5 .5 V
VGS = -10 V
-ID, DRAIN CURRENT (A)
-VDS, DRA IN TO SOURCE VOLTAGE (V)
On Region Characteristics Figure 2.
0 1428425670
0
1
2
3
4
VGS = -4.5 V
PULSE DU R ATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SO UR CE ON-RESIST ANCE
-ID, DRAIN CURRENT (A)
VGS = -5 V
VGS = -6 V
VGS = -5 .5 V
VGS = -10 V
Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On Resistance
-75 -50 -25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
ID = -4.4 A
VGS = -10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTIO N TEMPE RA TUR E (oC)
vs Junction Te mperature Figure 4.
345678910
20
40
60
80
100
120
140
TJ = 125 oC
ID = -4.4 A
TJ = 25 oC
-VGS, G ATE TO SOU R C E VO L TAGE (V)
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
PULSE D UR A TION = 80 μs
DUTY CYCLE = 0.5% MAX
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
23456
0
14
28
42
56
70
TJ = 150 oC
VDS = -10 V
PULSE DU R ATION = 80 μs
DUTY CYCLE = 0.5% MA X
TJ = -55 oC
TJ = 25 oC
-ID, DRAIN CURRENT (A)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
VGS = 0 V
-IS, REVERSE DRAIN CURRENT (A)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
Forward Voltage vs Source Current
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©2014 Fairchild Semiconductor Corporation
FDMS86263P Rev.C2
FDMS86263P P-Channel PowerTrench® MOSFET
Figure 7.
0 1020304050
0
2
4
6
8
10
ID = -4.4 A
VDD = -100 V
VDD = -75 V
-VGS, GATE TO SOURCE VOL TAGE (V)
Qg, GATE CHARGE (nC)
VDD = -50 V
Gate Charge Characteristics Figure 8.
0.1 1 10 100
1
10
100
1000
10000
f = 1 MH z
VGS = 0 V
CAPACITANCE (pF)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
Capacitance vs Drain
to Source Voltage
Figure 9.
Unc l amp e d Ind u ctiv e
Switching Capability Figure 10.
25 50 75 100 125 150
0
10
20
30
40
VGS = -6 V
Limited b y Pa ckage
RθJC = 1.2 oC/W
VGS = -10 V
-ID, DRAIN CURRENT (A)
TC, CASE TEMPERA TURE (oC)
Maximum Continuous Drain
Current vs Case Temperature
Figure 11. Forward Bias Safe
Operating Area
110100400
0.1
1
10
100
200
CURVE BENT TO
MEASURED DATA
10 µs
1 ms
DC
10 ms
100 µs
-ID, DRAIN CURRENT (A)
-VDS, DRAIN to SOURCE VOLTAGE (V)
THI S AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MA X RA TED
RθJC = 1.2 oC/W
TC = 25 oC
Figure 12. Single Pulse Maximum
Power Dissipation
10-5 10-4 10-3 10-2 10-1 1
50
100
1000
10000
30000 SINGLE PULSE
RθJC = 1.2 oC/W
TC = 25 oC
P(PK), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
Typical Characteristics TJ = 25 °C unless otherwise noted
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©2014 Fairchild Semiconductor Corporation
FDMS86263P Rev.C2
FDMS86263P P-Channel PowerTrench® MOSFET
Figure 13.
10-5 10-4 10-3 10-2 10-1 1
0.005
0.01
0.1
1
2
SINGLE PULSE
DUTY CYCLE-DESCENDING ORDER
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTAN CE
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.0 5
0.0 2
0.0 1
PDM
t1t2
NOTES:
ZθJC(t) = r(t) x RθJC
RθJC = 1.2 oC/W
Duty Cycle, D = t1 / t2
Peak TJ = PDM x ZθJC(t) + TC
Junction-to-Case Transient Thermal Response Curve
Typical Characteristics TJ = 25 °C unless otherwise noted
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Rev. I77
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