Symbol Units
VDS V
VGS V
TA=25°C
TA=70°C
IDM
VKA V
TA=25°C
TA=70°C
IFM
TA=25°C
TA=70°C
TJ, TSTG °C
Symbol Units
RθJL
Maximum Junction-to-Lead CSteady-State 58.5 80
110 °C/W
Maximum Junction-to-Ambient ASteady-State 117 150
Maximum Junction-to-Ambient At ≤ 10s RθJA
80.3
Parameter: Thermal Characteristics MOSFET Typ Max
W
0.72 0.59
Junction and Storage Temperature Range -55 to 150 -55 to 150
Power Dissipation PD
1.14 0.92
A
1
Pulsed Forward Current B10
Schottky reverse voltage 20
Continuous Forward Current AIF
2
A
-2.1
Pulsed Drain Current B-10
Gate-Source Voltage ±8
Continuous Drain Current AID
-2.7
Parameter MOSFET Schottky
Drain-Source Voltage -20
Absolute Maximum Ratings TA=25°C unless otherwise noted
AO3703
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
VDS (V) = -20V
ID = -2.7 A (VGS = -10V)
RDS(ON) < 97mΩ (VGS = -4.5V)
RDS(ON) < 130mΩ (VGS = -2.5V)
RDS(ON) < 190mΩ (VGS = -1.8V)
SCHOTTKY
VDS (V) = 20V, IF = 1A, VF<0.5V@0.5A
General Description
The AO3703 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AO3703 is Pb-free (meets ROHS & Sony
259 specifications). AO3703L is a Green Product ordering
option. AO3703 and AO3703L are electrically identical.
SOT-23-5
Top View
1
2
3
5
4
G
S
A
D
KA
K
D
S
G
Alpha & Omega Semiconductor, Ltd.
AO3703
Symbol Min Typ Max Units
BVDSS -20 V
-1
TJ=55°C -5
IGSS ±100 nA
VGS(th) -0.3 -0.6 -1 V
ID(ON) -10 A
76 97
TJ=125°C 111 135
101 130 m
Ω
134 190 m
Ω
gFS 47 S
VSD -0.78 -1 V
IS-2 A
Ciss 540 pF
Coss 72 pF
Crss 49 pF
Rg12 Ω
Qg6.1 nC
Qgs 0.6 nC
Qgd 1.6 nC
tD(on) 10 ns
tr12 ns
tD(off) 44 ns
tf22 ns
trr 21 ns
Qrr 7.5 nC
SCHOTTKY PARAMETERS
VF0.39 0.5 V
0.1
20
CT34 pF
trr 5.2 10 ns
Qrr 0.8 nC
THIS
PRODUCT
HAS
BEEN
DESIGNED
AND
QUALIFIED
FOR
THE
CONSUMER
MARKET
.
APPLICATIONS
OR
USES
AS
CRITICA
COMPONENTS
IN
LIFE
SUPPORT
DEVICES
OR
SYSTEMS
ARE
NOT
AUTHORIZED
.
AOS
DOES
NOT
ASSUME
ANY
LIABILITY
ARISIN
OUT
OF
SUCH
APPLICATIONS
OR
USES
OF
ITS
PRODUCTS
.
AOS
RESERVES
THE
RIGHT
TO
IMPROVE
PRODUCT
DESIGN
FUNCTIONS
AND
RELIABILITY
WITHOUT
NOTICE
Turn-Off DelayTime
mA
VR=16V, TJ=125°C
Turn-Off Fall Time
Irm
Body Diode Reverse Recovery Time IF=-2.7A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=-2.7A, dI/dt=100A/µs
Junction Capacitance VR=10V
Forward Voltage Drop IF=0.5A
Maximum reverse leakage current VR=16V
Gate resistance
Turn-On DelayTime
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
VGS=-4.5V, VDS=-10V, ID=-2.7A
Gate Source Charge
Gate Drain Charge
VGS=-4.5V, VDS=-10V, RL=2.8Ω,
RGEN=3Ω
Turn-On Rise Time
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
VGS=0V, VDS=-10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance VDS=-5V, ID=-2.7A
Diode Forward Voltage IS=-1A,VGS=0V
mΩ
VGS=-2.5V, ID=-2A
VGS=-1.8V, ID=-1A
On state drain current VGS=-4.5V, VDS=-5V
RDS(ON) Static Drain-Source On-Resistance
VGS=-4.5V, ID=-2.7A
VDS=0V, VGS=±8V
Drain-Source Breakdown Voltage ID=-250µA, VGS=0V
Gate Threshold Voltage VDS=VGS ID=-250µA
Gate-Body leakage current
IDSS Zero Gate Voltage Drain Current VDS=-16V, VGS=0V
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter Conditions
STATIC PARAMETERS
µΑ
Schottky Reverse Recovery Time IF=1A, dI/dt=100A/µs
Schottky Reverse Recovery Charge IF=1A, dI/dt=100A/µs
A: The value of R
θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve
p
rovides a sin
g
le
p
ulse ratin
g
. Rev0: Jul
y
200
6
Alpha & Omega Semiconductor, Ltd.
AO3703
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
012345
-VDS (Volts)
Fig 1: On-Region Characteristics
-ID (A)
VGS=-1.5V
-2.0V
-2.5V
-4.5V
-8V
-3.0V
0
2
4
6
0 0.5 1 1.5 2
-VGS(Volts)
Figure 2: Transfer Characteristics
-ID(A)
25°C
125°
C
VDS=-5V
50
100
150
200
0246
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
VGS=-1.8V
VGS=-2.5V
VGS=-4.5V
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
-IS (A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Norm aliz ed On-Resistance
VGS=-2.5V
VGS=-1.8V
VGS=-4.5V
50
100
150
200
02468
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
ID=-2.7A
25°
C
125°C
Alpha & Omega Semiconductor, Ltd.
AO3703
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
0
1
2
3
4
5
02468
-Qg (nC)
Figure 7: Gate-Charge Characteristics
-VGS (Volts)
0
200
400
600
800
0 5 10 15 20
-VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitan ce (p F )
Ciss
Coss
Crss
0
5
10
15
20
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normaliz ed T ran sient
Thermal Resi stan ce
T
on
T
P
D
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=110°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
1.0
10.0
100.0
0.1 1 10 100
-VDS (Volts)
-ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
µ
s
10ms
1ms
0.1s
1s
10s
D
C
RDS(ON)
limited
10µs
TJ(Max)=150°C
TA=25°C
VDS=-10V
ID=-2.7A
TJ(Max)=150°C
TA=25°C
Alpha & Omega Semiconductor, Ltd.