PMP4201G; PMP4201Y NPN/NPN matched double transistors; hFE1/hFE2 = 2 % Rev. 01 -- 14 February 2006 Product data sheet 1. Product profile 1.1 General description NPN/NPN matched double transistors in small Surface Mounted Device (SMD) plastic packages. The transistors in the SOT363 (SC-88) package are fully isolated internally. Table 1: Product overview Type number Package Philips JEITA NPN/NPN hFE1/hFE2 5 % complement PNP/PNP complement PMP4201G SOT353 SC-88A PMP4501G PMP5201G PMP4201Y SOT363 SC-88 PMP4501Y PMP5201Y 1.2 Features Current gain matching Base-emitter voltage matching Common emitter configuration for SOT353 types Application-optimised pinout 1.3 Applications Current mirror Differential amplifier 1.4 Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 45 V IC collector current - - 100 mA hFE DC current gain VCE = 5 V; IC = 2 mA 200 290 450 hFE1/hFE2 hFE matching VCE = 5 V; IC = 2 mA [1] - - 2 % VBE1 - VBE2 VBE matching VCE = 5 V; IC = 2 mA [2] - - 2 mV Per transistor Per device [1] The smaller of the two values is taken as the numerator. [2] The smaller of the two values is subtracted from the larger value. PMP4201G; PMP4201Y Philips Semiconductors NPN/NPN matched double transistors; hFE1/hFE2 = 2 % 2. Pinning information Table 3: Pinning Pin Description Simplified outline Symbol SOT353 1 base TR1 2 emitter TR1, TR2 3 base TR2 4 collector TR2 5 collector TR1 5 4 5 4 TR1 TR2 1 2 3 1 2 3 006aaa549 SOT363 1 base TR1 2 base TR2 3 collector TR2 4 emitter TR2 5 emitter TR1 6 collector TR1 6 5 4 6 5 4 TR1 TR2 1 2 3 1 2 3 006aaa548 3. Ordering information Table 4: Ordering information Type number Package Name Description Version PMP4201G SC-88A plastic surface mounted package; 5 leads SOT353 PMP4201Y SC-88 plastic surface mounted package; 6 leads SOT363 4. Marking Table 5: Marking codes Type number Marking code [1] PMP4201G R7* PMP4201Y S7* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PMP4201G_Y_1 Product data sheet (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 -- 14 February 2006 2 of 14 PMP4201G; PMP4201Y Philips Semiconductors NPN/NPN matched double transistors; hFE1/hFE2 = 2 % 5. Limiting values Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 45 V VEBO emitter-base voltage open collector - 6 V IC collector current - 100 mA ICM peak collector current single pulse; tp 1 ms - 200 mA Ptot total power dissipation Tamb 25 C [1] - 200 mW Ptot total power dissipation Tamb 25 C [1] - 300 mW Tstg storage temperature -65 +150 C Tj junction temperature - 150 C Tamb ambient temperature -65 +150 C Per device [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 7: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 625 K/W in free air [1] - - 416 K/W Per device Rth(j-a) [1] thermal resistance from junction to ambient Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. PMP4201G_Y_1 Product data sheet (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 -- 14 February 2006 3 of 14 PMP4201G; PMP4201Y Philips Semiconductors NPN/NPN matched double transistors; hFE1/hFE2 = 2 % 7. Characteristics Table 8: Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VCB = 30 V; IE = 0 A - - 15 nA VCB = 30 V; IE = 0 A; Tj = 150 C - - 5 A nA Per transistor ICBO collector-base cut-off current IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 hFE DC current gain VCE = 5 V; IC = 10 A - 250 - VCE = 5 V; IC = 2 mA 200 290 450 IC = 10 mA; IB = 0.5 mA - 50 200 mV IC = 100 mA; IB = 5 mA - 200 400 mV [1] - 760 - mV IC = 100 mA; IB = 5 mA [1] - 910 - mV VCE = 5 V; IC = 2 mA [2] 610 660 710 mV VCE = 5 V; IC = 10 mA [2] - - 770 mV VCEsat VBEsat VBE collector-emitter saturation voltage base-emitter saturation IC = 10 mA; voltage IB = 0.5 mA base-emitter voltage Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 1.5 pF Ce emitter capacitance VEB = 0.5 V; IC = ic = 0 A; f = 1 MHz - 11 - pF fT transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz 100 250 - MHz NF noise figure VCE = 5 V; IC = 0.2 mA; RS = 2 k; f = 10 Hz to 15.7 kHz - 2.8 - dB VCE = 5 V; IC = 0.2 mA; RS = 2 k; f = 1 kHz; B = 200 Hz - 3.3 - dB PMP4201G_Y_1 Product data sheet (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 -- 14 February 2006 4 of 14 PMP4201G; PMP4201Y Philips Semiconductors NPN/NPN matched double transistors; hFE1/hFE2 = 2 % Table 8: Characteristics ...continued Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions hFE matching VCE = 5 V; IC = 2 mA VBE1 - VBE2 VBE matching VCE = 5 V; IC = 2 mA Min Typ Max Unit [3] - - 2 % [4] - - 2 mV Per device hFE1/hFE2 [1] VBEsat decreases by about 1.7 mV/K with increasing temperature. [2] VBE decreases by about 2 mV/K with increasing temperature. [3] The smaller of the two values is taken as the numerator. [4] The smaller of the two values is subtracted from the larger value. PMP4201G_Y_1 Product data sheet (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 -- 14 February 2006 5 of 14 PMP4201G; PMP4201Y Philips Semiconductors NPN/NPN matched double transistors; hFE1/hFE2 = 2 % 0.20 IC (A) 0.16 006aaa532 IB (mA) = 4.50 4.05 3.60 3.15 006aaa533 600 hFE 2.70 2.25 1.80 1.35 0.12 400 (1) 0.90 (2) 0.08 0.45 200 (3) 0.04 0 0 2 4 6 8 10 VCE (V) Tamb = 25 C 0 10-2 10-1 1 10 102 103 IC (mA) VCE = 5 V (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C Fig 1. Collector current as a function of collector-emitter voltage; typical values 006aaa534 1.3 VBEsat (V) 1.1 Fig 2. DC current gain as a function of collector current; typical values 006aaa535 10 VCEsat (V) 0.9 1 (1) (2) 0.7 (3) 10-1 0.5 (1) (2) (3) 0.3 0.1 10-1 1 10 102 103 10-2 10-1 1 IC (mA) IC/IB = 20 IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = -55 C 103 Fig 4. Collector-emitter saturation voltage as a function of collector current; typical values PMP4201G_Y_1 Product data sheet 102 IC (mA) (1) Tamb = -55 C Fig 3. Base-emitter saturation voltage as a function of collector current; typical values 10 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 -- 14 February 2006 6 of 14 PMP4201G; PMP4201Y Philips Semiconductors NPN/NPN matched double transistors; hFE1/hFE2 = 2 % 006aaa536 1 VBE (V) 006aaa537 103 fT (MHz) 0.8 102 0.6 0.4 10-1 1 102 10 103 10 1 VCE = 5 V; Tamb = 25 C IC (mA) VCE = 5 V; Tamb = 25 C Fig 5. Base-emitter voltage as a function of collector current; typical values 006aaa538 5 Cc (pF) 102 10 IC (mA) Fig 6. Transition frequency as a function of collector current; typical values 006aaa539 15 4 Ce (pF) 13 3 11 2 9 1 7 5 0 0 2 4 6 8 10 VCB (V) Tamb = 25 C; f = 1 MHz 0 4 6 VEB (V) Tamb = 25 C; f = 1 MHz Fig 7. Collector capacitance as a function of collector-base voltage; typical values Fig 8. Emitter capacitance as a function of emitter-base voltage; typical values PMP4201G_Y_1 Product data sheet 2 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 -- 14 February 2006 7 of 14 PMP4201G; PMP4201Y Philips Semiconductors NPN/NPN matched double transistors; hFE1/hFE2 = 2 % 8. Application information V+ VCC OUT1 OUT2 IN1 R1 TR1 IN2 TR2 l out TR1 TR2 V- 006aaa523 006aaa525 Fig 9. Current mirror Fig 10. Differential amplifier 9. Package outline 2.2 1.8 2.2 1.8 1.1 0.8 5 0.45 0.15 4 6 2.2 1.35 2.0 1.15 2.2 1.35 2.0 1.15 1 2 0.3 0.2 0.65 0.25 0.10 Fig 11. Package outline SOT353 (SC-88A) 2 3 0.45 0.15 0.25 0.10 1.3 04-11-16 Dimensions in mm 04-11-08 Fig 12. Package outline SOT363 (SC-88) PMP4201G_Y_1 Product data sheet 4 0.3 0.2 0.65 1.3 Dimensions in mm 5 pin 1 index 1 3 1.1 0.8 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 -- 14 February 2006 8 of 14 PMP4201G; PMP4201Y Philips Semiconductors NPN/NPN matched double transistors; hFE1/hFE2 = 2 % 10. Packing information Table 9: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number Package Description Packing quantity 3000 PMP4201G SOT353 4 mm pitch, 8 mm tape and reel -115 -135 PMP4201Y SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 [1] For further information and the availability of packing methods, see Section 17. [2] T1: normal taping [3] T2: reverse taping PMP4201G_Y_1 Product data sheet 10000 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 -- 14 February 2006 9 of 14 PMP4201G; PMP4201Y Philips Semiconductors NPN/NPN matched double transistors; hFE1/hFE2 = 2 % 11. Soldering 2.65 0.60 (1x) 2.35 solder paste 0.40 0.90 2.10 0.50 (4x) solder lands 0.50 (4x) solder resist occupied area 1.20 2.40 MSA366 Dimensions in mm Fig 13. Reflow soldering footprint SOT353 (SC-88A) 2.25 2.65 0.30 1.00 4.00 4.50 2.70 0.70 solder lands 1.15 3.75 solder resist transport direction during soldering occupied area Dimensions in mm Fig 14. Wave soldering footprint SOT353 (SC-88A) PMP4201G_Y_1 Product data sheet (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 -- 14 February 2006 10 of 14 PMP4201G; PMP4201Y Philips Semiconductors NPN/NPN matched double transistors; hFE1/hFE2 = 2 % 2.65 0.60 (2x) 0.40 0.90 2.10 (2x) 2.35 solder paste 0.50 (4x) solder lands solder resist 0.50 (4x) occupied area 1.20 2.40 MSA432 Dimensions in mm Fig 15. Reflow soldering footprint SOT363 (SC-88) 5.25 0.30 1.00 4.00 4.50 solder lands 1.15 3.75 solder resist transport direction during soldering occupied area Dimensions in mm Fig 16. Wave soldering footprint SOT363 (SC-88) PMP4201G_Y_1 Product data sheet (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 -- 14 February 2006 11 of 14 PMP4201G; PMP4201Y Philips Semiconductors NPN/NPN matched double transistors; hFE1/hFE2 = 2 % 12. Revision history Table 10: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PMP4201G_Y_1 20060214 Product data sheet - - - PMP4201G_Y_1 Product data sheet (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 -- 14 February 2006 12 of 14 PMP4201G; PMP4201Y Philips Semiconductors NPN/NPN matched double transistors; hFE1/hFE2 = 2 % 13. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 14. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 16. Trademarks 15. Disclaimers Notice -- All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 17. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com PMP4201G_Y_1 Product data sheet (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 -- 14 February 2006 13 of 14 Philips Semiconductors PMP4201G; PMP4201Y NPN/NPN matched double transistors; hFE1/hFE2 = 2 % 18. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information . . . . . . . . . . . . . . . . . . . . 13 (c) Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 14 February 2006 Document number: PMP4201G_Y_1 Published in The Netherlands