HITFETTM Smart Low Side Power Switch BTS3256D 10 m smart power single channel low side switch with restart and variable slew rate Datasheet Rev. 1.0, 2009-05-05 Automotive Smart Low Side Power Switch HITFET - BTS 3256D Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 2.1 BTS 3256D Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Voltage and current naming definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 3.1 3.2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pin Assignment BTS 3256D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 4.1 4.2 4.3 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5.1 5.1.1 5.2 5.3 Supply and Input Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Supply Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Under Voltage Lock Out / Power On Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics - Supply and Input Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 10 10 10 12 6 6.1 6.2 6.3 6.4 Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output On-state Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Timings and Slopes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inductive Output Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics - Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13 14 14 17 7 7.1 7.2 7.3 Control and Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Readout of Fault Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Adjustable Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics - Diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 20 20 21 8 8.1 8.2 8.3 8.4 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Over Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics - Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 22 22 23 25 9 9.1 9.2 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Dimensioning of serial Resistor at IN pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Further Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Datasheet 2 7 7 8 8 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch BTS3256D 1 BTS 3256D Overview The BTS 3256D is a single channel low-side power switch in PG-TO-252-5-11 package providing embedded protective functions. This HITFETTM is designed for automotive and industrial applications with outstanding protection and control features. The power transistor is a N-channel vertical power MOSFET. The device is controlled by a chip in Smart Power Technology. PG-TO-252-5-11 Basic Features * * * * * * * * * * Slew rate control by dedicated pin enabling EMC optimized switching or PWM operation Max. switching Frequency 12kHz Clear detection of digital fault signal also during fast PWM operation due to restart delay time Thermal and overload protection with time controlled auto restart behavior Time and Power limited active current limitation Minimum RDS(on) achieved with 3.3V or 5V logic input Electrostatic discharge protection (ESD) Very low leakage current Green Product (RoHS compliant) AEC (Automotive Electronics Council) Stress Test Qualification Table 1 Basic Electrical Data Operating voltage VSOP 5.5 V.... 30 V Over voltage protection VD (AZ) 40 V Maximum ON State resistance at Tj = 150C RDS(ON,max) 20 m Typical ON State resistance at Tj = 25C RDS(ON,typ) 10 m Nominal load current ID(nom) 7.5 A Minimum current limitation ID(lim) 42 A Type Package BTS 3256D PG-TO-252-5-11 Datasheet 3 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Overview Digital Diagnostic Features * * * * Over temperature Over load Short circuit Clear detection due to a restart delay time Protection Functions * * * * * Enhanced short circuit protection with time and power limited active current limitation Under voltage lock out Over temperature with time and temperature controlled auto restart Over load with power and time controlled auto restart ESD protection Application * * * * * * All types of resistive, inductive and capacitive loads Suitable for loads with inrush current, such as motors, coils, solenoids or lamps Suitable for EMC optimized switching in slow operation mode Suitable for higher speed PWM controlled loads in fast operation mode Replacement of electromechanical relays, fuses and discrete circuits Micro controller compatible low side power switch with digital feedback for 12V loads Detailed Description The BTS 3256D is an autorestart single channel low-side power switch in PG-TO-252-5-11 package providing embedded protective functions. The device is able to switch all kind of resistive, inductive and capacitive loads. The ESD protection of the VS and IN/Fault pin is referenced to GND. The BTS 3256D is supplied by the VS Pin. This Pin should be connected to a reverse protected battery line. The supply voltage is monitored by the under voltage lock out circuit. The Gate driving unit allows the device to operate in the lowest ohmic range independent of the input signal level, 3.3 V or 5 V . For slow PWM application the device offers smooth turn-on and off due to the embedded edge shaping function, to reduce EMC noise. Furthermore the SRP pin can be used to customize the slew rate of the device in a wide range. The Device is designed for driving automotive loads like motors,valves, coils or bulbs in continous or PWM mode. The over voltage protection is for protection during load-dump or inductive turn off conditions. The power MOSFET is limiting the Drain-Source voltage to a specified level. This function is available even without any supply. The over temperature protection prevents the device from overheating due to overload and/or bad cooling conditions. In order to reduce the device stress the edge shaping is disabled during thermal shutdown. After thermal shutdown the device stays off for the specified restart delay time to enable a clear feedback readout on the microcontroller. After this time the device follows the IN signal state. At high dynamic overload conditions, such as short circuit, the device will either turn off immediately due to the implemented over power limitation, or limit the current for a specified time and then switch off for the restart delay time. Shutdown of the device is triggered if the power dissipation during limitation is above the over power threshold. The short circuit shutdown is a timed restart function. The device will stay off for the specified time and afterwards follow the IN signal state. In order to reduce the device stress the edge shaping is disabled during protective turn off. Datasheet 4 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D BTS 3256D Block Diagram 2 BTS 3256D Block Diagram VS Drain Slew rate control SRP Under voltage lockout Gate Driving Unit IN / Fault ESD protection Overvoltage Protection Overtemperature Protection Overload Protection Short circuit Protection GND BlockDiagram.emf Figure 1 Block Diagram for the BTS3256D 2.1 Voltage and current naming definition Following figure shows all the terms used in this datasheet, with associated convention for positive values. Vbb V bb IS RL VS VS Drain SRP VSRP I IN VIN IN / Fault ID VD GND I GND GND Terms.emf Figure 2 Datasheet Terms 5 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Pin Configuration 3 Pin Configuration 3.1 Pin Assignment BTS 3256D (top view ) Drain 6 ( Tab) 5 GND 4 SRP 3 Drain 2 IN 1 VS PinConfiguration.emf Figure 3 Pin Configuration 3.2 Pin Definitions and Functions Pin Symbol Function 1 VS Supply Voltage; Connected to Battery Voltage with Reverse protection Diode and Filter against EMC 2 IN Control Input and Status Feedback; Digital input 3.3 V or 5 V logic. 3, Tab Drain Drain output; Protected low side power output channel, usually connected via load to battery 4 SRP Slew Rate Preset; Used to define slew rate, see Chapter 7.2 for details 5 GND Ground; Power ground, pin connection needs to carry the load current from Drain Datasheet 6 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D General Product Characteristics 4 General Product Characteristics 4.1 Absolute Maximum Ratings Absolute Maximum Ratings 1) Tj = -40 C to +150 C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Max. Unit Conditions Voltages 4.1.1 Supply voltage VS -0.3 30 V - 4.1.2 Supply voltage during active clamping VS(pulse) -0.3 452) V - -0.3 3) V - 4.1.3 Drain voltage VD 40 4.1.4 Drain voltage for short circuit protection VD(SC) 0 30 V 4) 4.1.5 Logic input voltage VIN -0.3 5.5 V - 4.1.6 Slew Rate Preset maximum voltages VSRP -0.3 5.5 V 5) Unclamped single pulse inductive energy EAS 0 0.3 J ID = 22 A; Vbb = 30 V Tj Tstg -40 150 C - -55 150 C - kV HBM6) Energies 4.1.7 Temperatures 4.1.8 Junction Temperature 4.1.9 Storage Temperature ESD Susceptibility 4.1.10 ESD Resistivity VESD on input pins (IN,SRP,VS) IN -4 4 on Drain and GND pins OUT -8 8 1) 2) 3) 4) 5) Not subject to production test, specified by design. Not for DC operation, only for short pulse (i.e. loaddump) for a total of 100 h in full device life. Active clamped. The Device can not be switched on if VD > VD(SC) SRP Pin is driven by an internal current source, so active driving from outside is not required,it may affect lifetime and could cause parameter shifts outside the range given in datasheet 6) ESD susceptibility, HBM according to EIA/JESD 22-A114B, section4 Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Datasheet 7 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D General Product Characteristics 4.2 Pos. Functional Range Parameter Symbol 4.2.1 Supply Voltage 4.2.2 Supply current in on VS IS Limit Values Unit Conditions Min. Max. 5.5 30 V - - 3 mA - Note: Within the functional range the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the related electrical characteristics table. 4.3 Thermal Resistance Pos. Parameter Symbol 4.3.1 Junction to Case1) RthjC RthjA 4.3.2 1) Junction to ambient Limit Values Unit Conditions Min. Typ. Max. - 0.9 1.1 K/W - - 80 - K/W @min. footprint - 45 - K/W @ 6 cm cooling area, see Figure 4 1) Not subject to production test, specified by design Datasheet 8 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D General Product Characteristics K/W 100 0.5 10 0.2 Z thJA 0.1 0.05 1 0.02 0.01 Single pulse 0.1 -6 10 Figure 4 10 -5 10 -4 10 -3 10 tp -2 10 -1 1 10 10 2 3 10 s Zth.emf Typical transient thermal impedance ZthJA = f(tp) , Pulse D = tp/T, Ta = 25 C Device on 50 mm x 50 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB mounted vertical without blown air. Datasheet 9 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Supply and Input Stage 5 Supply and Input Stage 5.1 Supply Circuit The Supply pin VS is protected against ESD pulses as shown in Figure 5. Due to an internal voltage regulator the device can be supplied from a reverse polarity protected battery line. 5.5V .. 30V BTS3256 D VS Regulator ZD GND Figure 5 Supply Circuit 5.1.1 Under Voltage Lock Out / Power On Reset Supply .emf In order to ensure a stable device behavior under all allowed conditions the Supply voltage VS is monitored by the under voltage lock out circuit. All device functions are only given for supply voltages above under voltage lockout. There is no failure feedback for VS < VSUVON. Device functional off VSUVOFF V SUVON UVLO.emf Figure 6 Under Voltage Lock Out 5.2 Input Circuit Figure 7 shows the input circuit of the BTS 3256D. It's ensured that the device switches off in case of open input pin. A Zener structure protects the input circuit against ESD pulses. As the BTS 3256D has a supply pin, the operation of the power MOS can be maintained regardless of the voltage on the IN pin, therefore a digital status feedback down to logic low is realized. For readout of the fault information, please refer to Diagnosis "Readout of Fault Information" on Page 20. Datasheet 10 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Supply and Input Stage IN/Fault 20A : 100A 1.0mA : 3.0mA GND Figure 7 Datasheet input.emf Input Circuit 11 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Supply and Input Stage 5.3 Electrical Characteristics - Supply and Input Stages VS = 5.5 V to 30 V, Tj = -40 C to +150 C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Typ. Max. Unit Conditions Under Voltage Lockout 5.3.1 UV-switch-on voltage VSUVON - - 5.6 V - 5.3.2 UV-switch-off voltage VSUVOFF 4.0 - 5.5 V - 5.3.3 UV-switch-off hysteresis VSUVHY - 0.2 - V VSUVON - VSUVOFF Digital Input / Fault Feedback 5.3.4 Low level voltage VINL -0.3 - 0.8 V - 5.3.5 High level voltage VINH 2.0 - 5.5 V - 5.3.6 Input pull down current IIN 20 50 100 A VIN = 5.3 V; no fault condition 5.3.7 Input pull down current in Fault IIN-Fault 1 2 3 mA VIN = 5.3 V; all fault conditions Datasheet 12 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Power Stage 6 Power Stage The power stage is built by a N-channel vertical power MOSFET (DMOS). 6.1 Output On-state Resistance The on-state resistance depends on the junction temperature TJ. Figure 8 shows this dependence for the typical on-state resistance RDS(on). 18 RDS(on) [ m ] 16 14 12 typ. 10 8 6 -50 -25 0 25 50 75 100 125 150 175 T [ C ] rdson_Tj.emf Figure 8 Typical On-State Resistance RDSon = f(TJ), VS = 10 V, VIN = high RDS(on) [ m ] 31 26 21 16 typ. 11 6 0 10 20 VS [ V ] Figure 9 Datasheet 30 rdson_Vs.emf Typical On-State Resistance RDSon = f(VS), VIN = high, Tambient = 25 C 13 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Power Stage 6.2 Output Timings and Slopes A high signal on the input pin causes the power MOSFET to switch on with a dedicated slope which is optimized for low EMC emission. Figure 10 shows the timing definition. IN High Low VD ton toff tond t toffd V bb 90 % 80 % |dv/dt| shaping |dv/dt|on 20 % 10 % |dv/dt|off |dv/dt|shaping |dv/dt| shaping t Figure 10 OutputTiming.em Definition of Power Output Timing for Resistive Load In order to minimize the emission during switching, the BTS 3256D limits the slopes during turn on and off at slow slew rate settings. For best performance of the edge shaping, the supply pin VS should be connected to battery voltage. For supply voltages other than nominal battery, the edge shaping can differ from the Values in the electrical characteristics table below. 6.3 Inductive Output Clamp When switching off inductive loads with low-side switches, the Drain Source voltage VD rises above battery potential, because the inductance intends to continue driving the current. The BTS 3256D is equipped with a voltage clamp mechanism that keeps the Drain-Source voltage VD at a certain level. See Figure 11 for more details. Drain GND output_clamp_curcuit.emf Figure 11 Datasheet Output Clamp 14 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Power Stage IN Overtemperature or short circuit detected High Low t ID t Von VD A Z V bb t inductive_output_clamp.emf Figure 12 Switching off an inductive Load While demagnetization of inductive loads, energy has to be dissipated in the BTS 3256D. This energy can be calculated with following equation: V bb - V D(AZ) RL IL L - ln 1 - --------------------------------E = V D(AZ) ------------------------------ + I L -----RL RL V bb - V D ( AZ ) Following equation simplifies under assumption of RL = 0 V bb 2 1 E = --- LI L 1 - ------------------------------- 2 V bb - V D(AZ) Figure 13 shows the inductance / current combination the BTS 3256D can handle. For maximum single avalanche energy please also refer to EAS value in "Energies" on Page 7. Datasheet 15 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Power Stage 10,00 Max. L [ mH ] 1,00 0,10 0,01 10 Figure 13 Datasheet ID [ A ] 50 EAS .emf Maximum allowed inductance values for single switch off (EAS) L=f (IL), Tj,start= 150 C, Vbb=30V, RL= 0 16 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Power Stage 6.4 Electrical Characteristics - Power Stage VS = 5.5 V to 30 V, Tj = -40 C to +150 C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. - 10 - m TJ = 25 C; ID = 20 A; VIN = high VS = 10 V - 16 20 m TJ = 150 C; ID = 20 A; VIN = high VS = 10 V Power Supply 6.4.1 On-state resistance RDS(on) 6.4.2 Nominal load current1) ID(nom) 7.5 8.7 - A TJ < 150 C; TA 85 C SMD2); VIN = high; VS 10 V; VDS = 0.5 V 6.4.3 ISO load current1) ID(ISO) 31 33 - A TJ < 150 C; TC = 85 C; VIN = high VS 10 V; VDS = 0.5 V; 6.4.4 Off state drain current IDSS - 6 12 A VD = 32 V; VIN = low - 1 2 A1) TJ = 85 C; VD = 13.5 V; VIN = low - 10 25 s Vs > 6V first rising edge on IN pin. 6.4.5 Dynamic Characteristics 6.4.6 power up settling time tinit Timings with fastest slew rate setting 6.4.7 Turn-on delay tond_fast - 4 10 s RL = 2.2 ; RSRP = OPEN; Vbb = VS = 13.5 V; see Figure 10 6.4.8 Turn-on time ton_fast - 11 22 s RL = 2.2 ; RSRP = OPEN; Vbb = VS = 13.5 V; see Figure 10 6.4.9 Turn-off delay toffd_fast 4 10 15 s RL = 2.2 ; RSRP = OPEN; Vbb = VS = 13.5 V; see Figure 10 Datasheet 17 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Power Stage VS = 5.5 V to 30 V, Tj = -40 C to +150 C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Typ. Max. Unit Conditions 6.4.10 Turn-off time toff_fast 9 16 24 s RL = 2.2 ; RSRP = OPEN; Vbb = VS = 13.5 V; see Figure 10 6.4.11 Slew rate on -dVD/dton_fast 1.2 2.2 3.8 V/s RL = 2.2 ; RSRP = OPEN; Vbb = VS = 13.5 V; see Figure 10 6.4.12 Slew rate off dVD/dtoff_fast 1.2 2.2 3.8 V/s RL = 2.2 ; RSRP = OPEN; Vbb = VS = 13.5 V; see Figure 10 6.4.13 Slew rate during edge shaping |dV/dt|shaping_fast - 0.66 - V/s 1) RL = 2.2 RSRP = OPEN; Vbb = VS = 13.5 V; see Figure 10 Timings with slowest slew rate setting 6.4.14 Turn-on delay tond_slow - 22 60 s RL = 2.2 ; RSRP = GND; Vbb = VS = 13.5 V see Figure 10 6.4.15 Turn-on time ton_slow - 85 200 s RL = 2.2 ; RSRP = GND; Vbb = VS = 13.5 V see Figure 10 6.4.16 Turn-off delay toffd_slow - 75 110 s RL = 2.2 ; RSRP = GND; Vbb = VS = 13.5 V see Figure 10 6.4.17 Turn-off time toff_slow 40 150 220 s RL = 2.2 ; RSRP = GND; Vbb = VS = 13.5 V see Figure 10 Datasheet 18 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Power Stage VS = 5.5 V to 30 V, Tj = -40 C to +150 C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Typ. Max. Unit Conditions 6.4.18 Slew rate on -dVD/dton_slow 0.08 0.2 0.6 V/s RL = 2.2 ; RSRP = GND; Vbb = VS = 13.5 V see Figure 10 6.4.19 Slew rate off dVD/dtoff_slow 0.08 0.2 0.6 V/s RL = 2.2 ; RSRP = GND; Vbb = VS = 13.5 V see Figure 10 6.4.20 Slew rate during edge shaping |dV/dt|shaping_slow - 0.088 - V/s 1) RL = 2.2 ; RSRP = GND; Vbb = VS = 13.5 V see Figure 10 -1.0 -1.5 V ID = -12 A; VS = 0 V; VIN = 0.0 V Inverse Diode 6.4.21 Inverse Diode forward voltage VD -0.3 1) Not subject to production test, specified by Design. 2) Device mounted according to EIA/JESD 52_2, FR4, 50 x 50 x 1.5 mm; 35 Cu, 5 Sn; 6 cm2 . PCB mounted without blown air Datasheet 19 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Control and Diagnosis 7 Control and Diagnosis The BTS3256D provides digital fault feedback on the IN pin without the need of an ADC. Additonally the device features an adjustable slew rate via the SRP pin. 7.1 Readout of Fault Information The BTS 3256D provides digital status information via an increased current on the IN / Fault pin. The voltage on this pin is pulled down to logic low when a fitting serial resistor is used. An example for the required circuitry is shown in Figure 14. The increased current IIN(fault) is one order of magnitude above the normal operation current IIN. A 3k3 for a 3.3V C or 5k6 for a 5V C is recommended. For detailed calculation please refer to "Dimensioning of serial Resistor at IN pin" on Page 26. . V bb V CC V CC VS Micro controller BTS3256 DO Fault =1 R1 I DO I IN IN/Fault 0 0 0 DI GND GND VDI GND Fault_readout.emf Figure 14 Readout of feedback information and XOR logic in micro 7.2 Adjustable Slew Rate In order to optimize electromagnitic emission, the switching speed of the MOSFET can be adjusted by connecting an external resistor between SRP pin and GND. This allows for balancing between electromagnetic emissions and power dissipation. RSRP-min represents the minimum slew rate Slew ratemin and RSRP-max represents the maximum slew rate Slew ratemax. A short to GND causes the minimum slew rate Slew ratemin. Open pin condition causes the maximum Slew rate Slew ratemax. Figure 15 shows the relation between the resistor value and the slew rate of BTS 3256D. Datasheet 20 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Control and Diagnosis 7.3 Electrical Characteristics - Diagnostic VS = 5.5 V to 30 V, Tj = -40 C to +150 C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Typ. Max. Unit Conditions Slew rate control 7.3.1 Slew ratemin Slew ratemin 0.08 0.2 0.6 V/s RSRP = 0 Ohm VS = 13.5 V; ohmic load 7.3.2 Slew rate15k Slew rate15k 0.2 0.6 - V/s RSRP = 15 kOhm VS = 13.5 V; ohmic load 7.3.3 Slew rate30k Slew rate30k 0.7 1.45 - V/s RSRP = 30 kOhm VS = 13.5 V; ohmic load 7.3.4 Slew ratemax Slew ratemax 1.2 2.2 3.8 V/s SRP pin open VS = 13.5 V; ohmic load 2,5 Slew rate [ V/s ] 2 1,5 1 0,5 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 R SRP [ k ] Slewrate.emf Figure 15 Typical relation between slew rate and resistor values used on RSRP (Vbat=13.5V) Datasheet 21 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Protection Functions 8 Protection Functions The device provides embedded protection functions against over temperature, over load and short circuit. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operation. 8.1 Thermal Protection The device is protected against over temperature resulting from overload and / or bad cooling conditions. The BTS 3256D has a thermal restart function. When overheating occurs, the device switches off for the restart delay time trestart. After this time the device restarts if the temperature is below threshold and the IN has logic high level. The fault feedback is activated during over temperature situation. See Figure 16 for the restart behavior. The diagram naming refers to Figure 14. Thermal shutdown IN High After delay time , IN is high Over temperature is gone Don't care Low t TJ TJ SD TJSD t IIN IINfault IINnom 0 VDI t high low trestart t thermal_fault_autorestart.emf Figure 16 Status Feedback via Input Current at Over temperature 8.2 Over Voltage Protection The BTS 3256D is equipped with a voltage clamp mechanism that keeps the Drain-Source voltage VD at a certain level. This stage is also used for inductive clamping. See "Inductive Output Clamp" on Page 14 for details. Datasheet 22 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Protection Functions 8.3 Short Circuit Protection The condition short circuit is an overload condition of the device. In a short circuit condition, the resulting dI / dt is a function of the short circuit resistance. The BTS3256D incorporates 2 shut down strategies for maximum robustness in the presence of short circuits: - immediate shut down in the case of low ohmic shorts by power detection exceeding Pmax - over temperature shut down in the case of an overload condition The additional feature of this device is a limitation of the load current to Ilim for a maximum time of tlim. If the condition is normalized in a shorter time than tlim, the device stays on, if not the device switch off for trestart and tries to restart in case the IN pin is still high. From first switch off the fault feedback will be activated during trestart and continues until the IN pin goes low or normal condition is reached. Figure 18 shows the behavior mentioned above. In this example first a shorted load occurs which causes the device to limit the current. The device stays on, because the load current returns to normal condition before trestart. In the second switch on, the short circuit is permanent and the device switches OFF after maximum limiting time, stays OFF for the blanking time regardless of the input pin condition and then stays OFF according to the IN pin low condition. The definitions of voltages and currents are in respect to Figure 14. The behavior of VDI also depends on RIN. 70 ID [ A ] 60 Protective Shut Down 50 40 30 Safe operation area 20 10 0 10 20 VDrain [ V ] Figure 17 Typical Power limitation behavior IDS / VDS Datasheet 23 30 Power_limitation.emf Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Protection Functions V IN Inrush Overload overload shut off Overload situation high Don't care low ID t Ilim t lim tlim IDnom t IIN IINfault IINnom 0 t VDI high low t t res tart protection_behaviour.emf Figure 18 Short Circuit during On State, Typical Behavior for Ohmic Loads The case when the device switches on into an existing short circuit - Short circuit type 1- is shown in Figure 17. The test setup for short circuit characterization is shown in Figure 19. The BTS 3256D is a low side switch. Therefore it can be assumed that the micro controller and device GND connection have a low impedance. All impedance in the short circuit path is merged in the short circuit resistance RSC and short circuit inductance LSC. RSC ID LSC Vcc Drain VS 5V BTS3256 IN Vb b Control circuit SRP GND RSR P GND short_circuit_schematic.emf Figure 19 Datasheet Test Setup for Short Circuit Characterization Test 24 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Protection Functions 8.4 Electrical Characteristics - Protection VS = 5.5 V to 30 V, Tj = -40 C to +150 C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Typ. Max. Unit Conditions Thermal Protection 8.4.1 Thermal shut down junction temperature TJSD 150 1751) - C - 8.4.2 Thermal hysteresis TJSD - 10 - K 1) VD(AZ) 40 44 - V ID = 10 mA; VS = 0.0 V; VIN = 0.0 V - 45 49 V ID = 8 A; VS = 0.0 V; VIN = 0.0 V Over Voltage Protection 8.4.3 Drain source clamp voltage Short Circuit Protection 8.4.4 current limitation level ID(lim) 42 55 72 A ohmic load 8.4.5 max. power switch OFF threshold Pmax 300 400 650 W - 8.4.6 max. time for current limitation before shut OFF tlim 3.5 5 6.5 ms 2) 8.4.7 restart delay time trestart 50 70 100 ms - resistive load 1) Not subject to production test, specified by design. 2) In case of inductive loads the device needs to increase the VDS voltage during current limitation. This can trigger the over Power protection switch off earlier as tlim. Datasheet 25 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Application Information 9 Application Information Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. 9.1 Dimensioning of serial Resistor at IN pin In order to use the digital feedback function of the device, there must be a serial resistor used between the IN pin and the driver (micro controller). To calculate this serial resistor on the input pin, three device conditions and of course the driver (micro controller) abilities need to be taken into account. Figure 20 shows the circuit used for reading out the digital status. V bb Microcontroller V CC I DO DO V CC VRIN RIN VS IIN BTS3256 IN/Fault DI V DO 20A : 100A VDI Fault information 1.0mA SRP : 3.0mA GND GND R S RP GND Fault_R1dim.emf Figure 20 Circuitry to readout fault information Note: This is a very simplified example of an application circuit. The function must be verified in the real application. Conditions to be meet by the circuitry: During normal operation VIN must be higher than VINH,min to switch ON. During fault condition the max. capability of the driver (micro controller) must not be exceeded and the logic low level at DI must be ensured by a voltage drop over the serial resistor RIN while the device fault current is flowing. Conditions in formulas: * Coutput current,min > CHIGH,max / RIN > IINFault_min with Coutput current,min referring to the C maximum output current capability with CHIGH,max referring to the maximal high output voltage of the C driving stage This condition is valid during status feedback operation mode * VIN = CHIGH,min - (RIN * IIN,max) > VINH,min with CHIGH,min referring to the minimal high output voltage of the C driving stage This condition is valid during normal operation mode Datasheet 26 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Application Information * CHIGH,max - (RIN * IIN-Fault,min) < C(DI)L,max with C(DI)L,max referring to the maximum logic low voltage of the C input stage The maximum current is either defined by the BTS 3256D or the C driving stage This condition is valid during status feedback operation mode Out of this conditions the minimum and maximum resistor values can be calculated. For a typical 5V micro controller with output current capability in the 3 mA range, a resistor range from 7.5 k down to 4.5 k can be used. For a typical 3.3V micro controller a range from 4.6 k to 2.5 k is suitable. 9.2 * Further Application Information For further information you may contact http://www.infineon.com/hitfet Datasheet 27 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Package Outlines 10 Package Outlines 2.3 +0.05 -0.10 B 5.4 0.1 1 0.1 0...0.15 0.5 +0.08 -0.04 5x0.6 0.1 1.14 4.56 0.9 +0.08 -0.04 0.51 min 0.15 max per side A 0.8 0.15 (4.17) 9.9 0.5 6.22 -0.2 1 0.1 6.5 +0.15 -0.10 0.1 0.25 M A B GPT09161 All metal surfaces tin plated, except area of cut. Figure 21 PG-TO-252-5-11 (Plastic Green Thin Outline Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). You can find all of our packages, sorts of packing and others in our Infineon Internet Page "Products": http://www.infineon.com/products. Datasheet 28 Dimensions in mm Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Revision History 11 Revision History Version Date Changes Rev. 1.0 2009-05-05 released Datasheet Datasheet 29 Rev. 1.0, 2009-05-05 Edition 2009-05-05 Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 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