3875081 GE SOLID STATE Pro Electron Power Transistors OL DE 3875081 oo17533 5 i O1E 17533) DIT - 33-/9 ad BD242, BD242A, BD242B, BD242C Epitaxial-Base Silicon P-N-P VERSAWATT Transistors For Power-Amplifier and High-Speed-Switching Applications Features: = 40 W at 25C case temperature = 5-A rated collector current = Min, f7 of 3 MHz at 10 V, 500 mA = Complements of n-p-n types BD241, BD241A, BD241B, and BD241C Types BD242, BD242A, BD242B, and BD242C are epitaxial- base silicon p-n-p transistors; they differ only in their voltage ratings. These devices are intended for a wide variety of switching and amplifier applications such as series and shunt regulators, and driver and output stages of high-fidelity amplifiers, The BO242-series power transistors are complements of the devices in the BD241 series. (The BD241-series devices are described In File No. 671.) All types utilize the JEDEC TO-220AB (VERSAWATT) plas- tic package. MAXIMUM RATINGS, Absolute-Maximum Values: File Number 672 TERMINAL DESIGNATIONS &_ _ 2 (FLANGE) C >, O Fos" TOP VIEW 9205-39969 JEDEC TO-220AB BD242 BD242A BD242B BD242C COLLECTOR-TO-EMITTER VOLTAGE: With external base-to-emitter resistance (Rgg)=1002.......... VcER 55 70 90 115 Vv With base open ................0. VceEO 45 60 80 100 Vv EMITTER-TO-BASE VOLTAGE....... Vego 5 -5 5 5 Vv CONTINUOUS COLLECTOR CURRENT le 5 5 5 6 A CONTINUOUS BASE CURRENT....., lp 1 -1 -1 ~1 A . TRANSISTOR DISSIPATION: Py At case temperatures up to 25C .... 40 40 40 . 40 Ww At ambient temperatures up to 25C , 2 2 2 2 Ww At case temperatures above 25C .... + __ See Fig. 2 __---____ TEMPERATURE RANGE: Storage & Operating (Junction)...... + - 65 to 150 ___________ C LEAD TEMPERATURE (During Soldering): At distance 1/8 in. (3.17 mm) from case for 10s Max. oo... cece eee ee + 235 > C 538 1076 G-07Oh DE 3a7soai o017534 ag 3875081 G E SOLID STATE O1E 17534 0 T*S3-19 Pro Electron Power Transistors BD242, BD242A, BD242B, BD242C ELECTRICAL CHARACTERISTICS at Case Temperature (Tc) = 25C TEST CONDITIONS LIMITS cuaracteristic | symao. | VOVTAGE) CURRENT | pooya BD2424 802428 Bp24zc | UNITS q Vee] Vac} Io | Ip | MIN. | MAX.) MIN. | MAX.) MIN. | MAX. |] MIN, | MAX. Colfector Cutoff Current: \ -30 0 - -0.3 - -0.3 - ad - - With base apen cEO -60 0 - - - -_ = -0.3 - -0.3 A m. With base-to-emitter =45 oO - -0.2 - = = - ~ junction short-circuited \ -60 0 - _ 70.2 - - - - ces -80 | o - - - - ~ |-o2] _ ~100 0 - - - ~ - _ _ 0.2 Emitter Cutoff Current lego 5 0 - -1 - ~1 - -1 - ~1 mA Coltector-to-Emitter Breakdown Voltage: VeRICEO) +0.037| o |45 - ~60 - ~80 - ~100 - Vv With base open OC Forward-Current h -4 ~14 25 - 25 - 25 - 26 - Transfer Ratio FE -4 3a 10 - 10 - 10 - 10 - Base-to-Emitter Voltage Vee -4 ga - -18 ~ ~1.8 - ~18 - 1.8 v Collector-to-Emitter ~j@ = - _ ~ _- - - = Saturation Voltage Vog (sat 3 0.6 1,2 1.2 1.2 1.2 Vv Common-Emitter Small-Signal Short- Circuit Forward- Current Transfer Ratio (f= 1 kHz) Magnitude of Common Emitter Small-Signal Short-Circult Forward- Current Transter Ratio (f= 1 MH2b Thermal Resistance: dunction-to-Case Fasc - 3.125 ~- 3.125 - 3.4126 - 3.125 Junction-to-Ambient Roya - 625 ~ 62.5 - 62.5 - 62.5 hte -10 -05 20 ~ 20 - 20 - 20 - [Me] | - 10 -05 3) - 3] - 3] - a2} - cw 4Pulsed: Pulse duration = 300 us, duty factor = 2%. 539 1077 G-08oh DE 3875081 Ool7535 O i 3875081 G E SOLID STATE o1e 17535 ov 7S37I9 Pro Electron Power Transistors ann BD242, BD242A, BD242B, BD242C CASE TEMPERATURE 25C oc DISSIPATIONLIMITED COLLECTOR CLRAENT (Ic }- A - Yceo MAX -45 (8D242) Vero MAX- GOV (802424) Vee MAX.*-80v (802428) Vee MAX*-100v (802420) 4 oe 2 4 ee 2 ee 1 10 100 1000 COLLECTOR -TO-EMITTER VOLTAGE (Vogl~ V 92$.-22645 Fig. t Maximum safe operating areas for all types. CURRENT DERATING 4T CONSTANT VOLTAGE ONLY TO THE DYSSIPATION-LIMITED MAXIMUM -OPERATING-AREA CURVES (F1G #1. 00 OERATE THE SPECIFIED VALUE FOR tc MAX, 2 ws CASE TEMPERATURE (Tel- C 9208-19663 Fig. 2 Derating curves for all types. TO-EMITTER VOLTAGE {VcE}t-4V c 2 o 2 oo ssa DC FORWARD- CURRENT TRANSFER RATIO thee) O01 -O8 al 10 COLLECTOR GUARENT (ic lA sics- zoe Fig. 3 Typical de beta characteristics for all types. 540 107 G-09