1
Data sheet acquired from Harris Semiconductor
SCHS173C
Features
• Buffered Inputs and Outputs
• Four Operating Modes
• Typical Propagation Delay of 15ns at VCC = 5V,
CL = 15pF, TA = 25oC
• Fanout (Over Temperature Range)
- Standard Outputs. . . . . . . . . . . . . . . 10 LSTTL Loads
- Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads
• Wide Operating T emperature Range . . . -55oC to 125oC
• Balanced Propagation Delay and Transition Times
• Significant Power Reduction Compared to LSTTL
Logic ICs
• HC Types
- 2V to 6V Operation
- High Noise Immunity: NIL = 30%, NIH = 30% of VCC
at VCC = 5V
• HCT Types
- 4.5V to 5.5V Operation
- Direct LSTTL Input Logic Compatibility,
VIL= 0.8V (Max), VIH = 2V (Min)
- CMOS Input Compatibility, Il≤1µA at VOL, VOH
Description
The ’HC259 and ’HCT259 Addressable Latch features the
low-power consumption associated with CMOS circuitry and
has speeds comparable to low-power Schottky.
This latches three active modes and one reset mode. When
both the Latch Enable (LE) and Master Reset (MR) inputs are
low (8-line Demultiplexer mode) the output of the addressed
latch follows the Data input and all other outputs are forced
low. When both MR and LE are high (Memory Mode), all
outputs are isolated from the Data input, i.e., all latches hold
the last data presented before the LE transition from low to
high. A condition of LE low and MR high (Addressable Latch
mode) allows the addressed latch’s output to follow the data
input; all other latches are unaffected. The Reset mode (all
outputs low) results when LE is high and MR is low.
Ordering Information
PART NUMBER TEMP. RANGE
(oC) PACKAGE
CD54HC259F3A -55 to 125 16 Ld CERDIP
CD54HCT259F3A -55 to 125 16 Ld CERDIP
CD74HC259E -55 to 125 16 Ld PDIP
CD74HC259M -55 to 125 16 Ld SOIC
CD74HC259MT -55 to 125 16 Ld SOIC
CD74HC259M96 -55 to 125 16 Ld SOIC
CD74HCT259E -55 to 125 16 Ld PDIP
CD74HCT259M -55 to 125 16 Ld SOIC
CD74HCT259MT -55 to 125 16 Ld SOIC
CD74HCT259M96 -55 to 125 16 Ld SOIC
NOTE: When ordering, use the entire part number. The suffix 96
denotes tape and reel. The suffix T denotes a small-quantity reel
of 250.
November 1997 - Revised October 2003
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright © 2003, Texas Instruments Incorporated
CD54HC259, CD74HC259,
CD54HCT259, CD74HCT259
High-Speed CMOS Logic
8-Bit Addressable Latch
[ /Title
(CD74
HC259
,
CD74
HCT25
9)
/Sub-
ject
(High
Speed
CMOS
Logic
8-Bit
Addres
sable
Latch)
2
Pinout
CD54HC259, CD54HCT259
(CERDIP)
CD74HC259, CD74HCT259
(PDIP, SOIC)
TOP VIEW
Functional Diagram
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
A0
A1
A2
Q0
Q1
Q2
GND
Q3
VCC
LE
D
Q7
Q6
Q5
Q4
MR
1
2
3
14
15
13
4
5
6
7
10
12
11
9
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
MR
LE
8
LATCHES
1-OF-8
DECODER
D
A2
A1
A0
GND = 8
VCC = 16
TRUTH TABLE
INPUTS OUTPUT OF
ADDRESS
LATCH EACH OTHER
OUTPUT FUNCTIONMR LE
HL D Q
io Addressable
Latch
HH Q
io Qio Memory
L L D L 8-Line
Demultiplexer
L H L L Reset
H = High Voltage Level
L = Low Voltage Level
D = The level at the data input
Qio = The level of Qi(i = 0, 1...7, as appropriate) before the indicat-
ed steady-state input conditions were established.
LATCH SELECTION TABLE
SELECT INPUTS LATCH
ADDRESSEDA2 A1 A0
LLL 0
LLH 1
LHL 2
LHH 3
HLL 4
HLH 5
HHL 6
HHH 7
CD54HC259, CD74HC259, CD54HCT259, CD74HCT259
3
Absolute Maximum Ratings Thermal Information
DC Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V
DC Input Diode Current, IIK
For VI < -0.5V or VI > VCC + 0.5V. . . . . . . . . . . . . . . . . . . . . .±20mA
DC Output Diode Current, IOK
For VO < -0.5V or VO > VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±20mA
DC Drain Current, per Output, IO
For -0.5V < VO < VCC + 0.5V. . . . . . . . . . . . . . . . . . . . . . . . . .±25mA
DC Output Source or Sink Current per Output Pin, IO
For VO > -0.5V or VO < VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±25mA
DC VCC or Ground Current, ICC or IGND . . . . . . . . . . . . . . . . . .±50mA
Operating Conditions
Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
Supply Voltage Range, VCC
HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V
HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V
DC Input or Output Voltage, VI, VO . . . . . . . . . . . . . . . . . 0V to VCC
Input Rise and Fall Time
2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max)
4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max)
6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max)
Thermal Resistance (Typical, Note 1) θJA (oC/W)
E (PDIP) Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
M (SOIC) Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
Maximum Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. The package thermal impedance is calculated in accordance with JESD 51-7.
DC Electrical Specifications
PARAMETER SYMBOL
TEST
CONDITIONS VCC
(V)
25oC -40oC TO 85oC -55oC TO 125oC
UNITSVI(V) IO(mA) MIN TYP MAX MIN MAX MIN MAX
HC TYPES
High Level Input
Voltage VIH - - 2 1.5 - - 1.5 - 1.5 - V
4.5 3.15 - - 3.15 - 3.15 - V
6 4.2 - - 4.2 - 4.2 - V
Low Level Input
Voltage VIL - - 2 - - 0.5 - 0.5 - 0.5 V
4.5 - - 1.35 - 1.35 - 1.35 V
6 - - 1.8 - 1.8 - 1.8 V
High Level Output
Voltage
CMOS Loads
VOH VIH or VIL -0.02 2 1.9 - - 1.9 - 1.9 - V
-0.02 4.5 4.4 - - 4.4 - 4.4 - V
-0.02 6 5.9 - - 5.9 - 5.9 - V
High Level Output
Voltage
TTL Loads
- - ---- - - -V
-4 4.5 3.98 - - 3.84 - 3.7 - V
-5.2 6 5.48 - - 5.34 - 5.2 - V
Low Level Output
Voltage
CMOS Loads
VOL VIH or VIL 0.02 2 - - 0.1 - 0.1 - 0.1 V
0.02 4.5 - - 0.1 - 0.1 - 0.1 V
0.02 6 - - 0.1 - 0.1 - 0.1 V
Low Level Output
Voltage
TTL Loads
- - ---- - - -V
4 4.5 - - 0.26 - 0.33 - 0.4 V
5.2 6 - - 0.26 - 0.33 - 0.4 V
Input Leakage
Current IIVCC or
GND -6--±0.1 - ±1-±1µA
CD54HC259, CD74HC259, CD54HCT259, CD74HCT259
4
Quiescent Device
Current ICC VCC or
GND 0 6 - - 8 - 80 - 160 µA
HCT TYPES
High Level Input
Voltage VIH - - 4.5 to
5.5 2--2 - 2 - V
Low Level Input
Voltage VIL - - 4.5 to
5.5 - - 0.8 - 0.8 - 0.8 V
High Level Output
Voltage
CMOS Loads
VOH VIH or VIL -0.02 4.5 4.4 - - 4.4 - 4.4 - V
High Level Output
Voltage
TTL Loads
-4 4.5 3.98 - - 3.84 - 3.7 - V
Low Level Output
Voltage
CMOS Loads
VOL VIH or VIL 0.02 4.5 - - 0.1 - 0.1 - 0.1 V
Low Level Output
Voltage
TTL Loads
4 4.5 - - 0.26 - 0.33 - 0.4 V
Input Leakage
Current IIVCC and
GND 0 5.5 - ±0.1 - ±1-±1µA
Quiescent Device
Current ICC VCC or
GND 0 5.5 - - 8 - 80 - 160 µA
Additional Quiescent
Device Current Per
Input Pin: 1 Unit Load
∆ICC
(Note 2) VCC
-2.1 - 4.5 to
5.5 - 100 360 - 450 - 490 µA
NOTE:
2. For dual-supply systems theoretical worst case (VI = 2.4V, VCC = 5.5V) specification is 1.8mA.
DC Electrical Specifications (Continued)
PARAMETER SYMBOL
TEST
CONDITIONS VCC
(V)
25oC -40oC TO 85oC -55oC TO 125oC
UNITSVI(V) IO(mA) MIN TYP MAX MIN MAX MIN MAX
HCT Input Loading Table
INPUT UNIT LOADS
A0 - A2, LE 1.5
D 1.2
MR 0.75
NOTE: Unit Load is ∆ICC limit specified in DC Electrical Table, e.g.,
360µA max at 25oC.
Prerequisite for Switching Specifications
PARAMETER SYMBOL VCC (V)
25oC -40oC TO 85oC -55oC TO 125oC
UNITSMIN TYP MAX MIN TYP MAX MIN TYP MAX
HC TYPES
Pulse Width tWL
LE 2 70 - - 90 - - 105 - - ns
4.5 14 - - 18 - - 21 - - ns
612--15- -18--ns
CD54HC259, CD74HC259, CD54HCT259, CD74HCT259
5
MR tWL 2 70 - - 90 - - 105 - - ns
4.5 14 - - 18 - - 21 - - ns
612--15- -18--ns
Setup Time tSU
D to LE
A to LE 2 80 - - 100 - - 120 - - ns
4.5 16 - - 20 - - 24 - - ns
614--17- -20--ns
Hold Time tH
D to LE
A to LE 20--0--0--ns
4.5 0 - - 0 - - 0 - - ns
60--0--0--ns
HCT TYPES
Pulse Width
LE
MR
tWL 4.5 18 - - 23 - - 27 - - ns
Setup Time
D to LE
A to LE
tSU 4.5 17 - - 21 - - 26 - - ns
Hold Time
D to LE
A to LE
tH4.5 0 - - 0 - - 0 - - ns
Prerequisite for Switching Specifications (Continued)
PARAMETER SYMBOL VCC (V)
25oC -40oC TO 85oC -55oC TO 125oC
UNITSMIN TYP MAX MIN TYP MAX MIN TYP MAX
Switching Specifications CL = 50pF, Input tr, tf= 6ns
PARAMETER SYMBOL TEST
CONDITIONS VCC (V)
25oC-40oC TO
85oC-55oC TO
125oC
UNITSMIN TYP MAX MIN MAX MIN MAX
HC TYPES
Propagation Delay tPHL CL = 50pF
D to Q 2 - - 185 - 230 - 280 ns
4.5 - - 37 - 46 - 56 ns
CL = 15pF 5 - 15 - - - - - ns
CL = 50pF 6 - - 31 - 39 - 48 ns
LE to Q tPHL CL = 50pF 2 - - 170 - 215 - 255 ns
4.5 - - 34 - 43 - 51 ns
CL = 15pF 5 - 14 - - - - - ns
CL = 50pF 6 - - 29 - 37 - 43 ns
CD54HC259, CD74HC259, CD54HCT259, CD74HCT259
6
A to Q tPHL CL = 50pF 2 - - 185 - 230 - 280 ns
4.5 - - 37 - 46 - 56 ns
CL = 15pF 5 - 15 - - - - - ns
CL = 50pF 6 - - 31 - 39 - 48 ns
MR to Q tPHL, tPLH CL = 50pF 2 - - 155 - 195 - 235 ns
4.5 - - 31 - 39 - 47 ns
CL = 15pF 5 - 13 - - - - - ns
CL = 50pF 6 - - 26 - 33 - 40 ns
Output Transition Time tTHL, tTLH CL = 50pF 2 - - 75 - 95 - 110 ns
4.5 - - 15 - 19 - 22 ns
6 - - 13 - 16 - 19 ns
Power Dissipation Capacitance
(Notes 3, 4) CPD CL = 15pF 5 - 21 - - - - - pF
Input Capacitance CICL = 50pF - 10 - 10 - 10 - 10 pF
HCT TYPES
Propagation Delay tPHL, tPLH
D to Q CL = 50pF 4.5 - - 39 - 49 - 59 ns
CL = 15pF 5 - 16 - - - - - ns
LE to Q CL = 50pF 4.5 - - 38 - 48 - 57 ns
CL = 15pF 5 - 16 - - - - - ns
A to Q CL = 50pF 4.5 - - 41 - 51 - 61 ns
CL = 15pF 5 - 17 - - - - - ns
MR to Q CL = 50pF 4.5 - - 39 - 49 - 59 ns
CL = 15pF 5 - 16 - - - - - ns
Power Dissipation Capacitance
(Notes 3, 4) CPD CL = 15pF 5 - 22 - - - - - pF
Input Capacitance CICL = 50pF - 10 - 10 - 10 - 10 pF
Output Transition Time tTHL, tTLH CL = 50pF 4.5 - - 15 - 19 - 22 ns
NOTES:
3. CPD is used to determine the dynamic power consumption, per package.
4. PD=C
PD VCC2fi+∑CLVCC2fOwhere fi= Input Frequency, fO= Output Frequency, CL= Output Load Capacitance,
VCC = Supply Voltage.
Switching Specifications CL = 50pF, Input tr, tf= 6ns (Continued)
PARAMETER SYMBOL TEST
CONDITIONS VCC (V)
25oC-40oC TO
85oC-55oC TO
125oC
UNITSMIN TYP MAX MIN MAX MIN MAX
CD54HC259, CD74HC259, CD54HCT259, CD74HCT259
7
Test Circuits and Waveforms
NOTE: Outputs should be switching from 10% VCC to 90% VCC in
accordance with device truth table. For fMAX, input duty cycle = 50%.
FIGURE 1. HC CLOCK PULSE RISE AND FALL TIMES AND
PULSE WIDTH
NOTE: Outputs should be switching from 10% VCC to 90% VCC in
accordance with device truth table. For fMAX, input duty cycle = 50%.
FIGURE 2. HCT CLOCK PULSE RISE AND FALL TIMES AND
PULSE WIDTH
FIGURE 3. HC TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC FIGURE 4. HCT TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC
FIGURE 5. HC SETUP TIMES, HOLD TIMES, REMOVAL TIME,
AND PROPAGATION DELAY TIMES FOR EDGE
TRIGGERED SEQUENTIAL LOGIC CIRCUITS
FIGURE 6. HCT SETUP TIMES, HOLD TIMES, REMOVAL TIME,
AND PROPAGATION DELAY TIMES FOR EDGE
TRIGGERED SEQUENTIAL LOGIC CIRCUITS
CLOCK 90% 50%
10% GND
VCC
trCLtfCL
50% 50%
tWL tWH
10%
tWL + tWH =fCL
I
CLOCK 2.7V 1.3V
0.3V GND
3V
trCL= 6ns tfCL= 6ns
1.3V 1.3V
tWL tWH
0.3V
tWL + tWH =fCL
I
tPHL tPLH
tTHL tTLH
90%
50%
10%
50%
10%
INVERTING
OUTPUT
INPUT
GND
VCC
tr = 6ns tf = 6ns
90%
tPHL tPLH
tTHL tTLH
2.7V
1.3V
0.3V
1.3V
10%
INVERTING
OUTPUT
INPUT
GND
3V
tr = 6ns tf = 6ns
90%
trCLtfCL
GND
VCC
GND
VCC
50%
90%
10%
GND
CLOCK
INPUT
DATA
INPUT
OUTPUT
SET, RESET
OR PRESET
VCC 50%
50%
90%
10%
50%
90%
tREM
tPLH
tSU(H)
tTLH tTHL
tH(L)
tPHL
IC CL
50pF
tSU(L)
tH(H)
trCLtfCL
GND
3V
GND
3V
1.3V
2.7V
0.3V
GND
CLOCK
INPUT
DATA
INPUT
OUTPUT
SET, RESET
OR PRESET
3V 1.3V
1.3V
1.3V
90%
10%
1.3V
90%
tREM
tPLH
tSU(H)
tTLH tTHL
tH(L)
tPHL
IC CL
50pF
tSU(L)
1.3V
tH(H)
1.3V
CD54HC259, CD74HC259, CD54HCT259, CD74HCT259
8
FIGURE 7. HC THREE-STATE PROPAGATION DELAY
WAVEFORM FIGURE 8. HCT THREE-STATE PROPAGATION DELAY
WAVEFORM
NOTE: Open drain waveforms tPLZ and tPZL are the same as those for three-state shown on the left. The test circuit is Output RL=1kΩto
VCC, CL = 50pF. FIGURE 9. HC AND HCT THREE-STATE PROPAGATION DELAY TEST CIRCUIT
Test Circuits and Waveforms (Continued)
50% 10%
90%
GN
D
VCC
10%
90% 50%
50%
OUTPUT
DISABLE
OUTPUT LOW
TO OFF
O
UTPUT HIGH
TO OFF
OUTPUTS
ENABLED OUTPUTS
DISABLED OUTPUTS
ENABLED
6ns 6ns
tPZH
tPHZ
tPZL
tPLZ
0.3
2.7
GN
D
3V
10%
90%
1.3V
1.3V
OUTPUT
DISABLE
OUTPUT LOW
TO OFF
O
UTPUT HIGH
TO OFF
OUTPUTS
ENABLED OUTPUTS
DISABLED OUTPUTS
ENABLED
tr6ns
tPZH
tPHZ
tPZL
tPLZ
6ns tf
1.3
IC WITH
THREE-
STATE
OUTPUT
OTHER
INPUTS
T
IED HIGH
OR LOW
OUTPUT
DISABLE
VCC FOR tPLZ AND tPZL
GND FOR tPHZ AND tPZ
H
OUTPUT
RL = 1kΩ
CL
50pF
CD54HC259, CD74HC259, CD54HCT259, CD74HCT259
PACKAGE OPTION ADDENDUM
www.ti.com 25-Sep-2013
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
5962-8985201EA ACTIVE CDIP J 16 1 TBD A42 N / A for Pkg Type -55 to 125 5962-8985201EA
CD54HCT259F3A
CD54HC259F3A ACTIVE CDIP J 16 1 TBD A42 N / A for Pkg Type -55 to 125 8551901EA
CD54HC259F3A
CD54HCT259F3A ACTIVE CDIP J 16 1 TBD A42 N / A for Pkg Type -55 to 125 5962-8985201EA
CD54HCT259F3A
CD74HC259E ACTIVE PDIP N 16 25 Pb-Free
(RoHS) CU NIPDAU N / A for Pkg Type -55 to 125 CD74HC259E
CD74HC259EE4 ACTIVE PDIP N 16 25 Pb-Free
(RoHS) CU NIPDAU N / A for Pkg Type -55 to 125 CD74HC259E
CD74HC259M ACTIVE SOIC D 16 40 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -55 to 125 HC259M
CD74HC259M96 ACTIVE SOIC D 16 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -55 to 125 HC259M
CD74HC259M96E4 ACTIVE SOIC D 16 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -55 to 125 HC259M
CD74HC259M96G4 ACTIVE SOIC D 16 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -55 to 125 HC259M
CD74HC259ME4 ACTIVE SOIC D 16 40 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -55 to 125 HC259M
CD74HC259MG4 ACTIVE SOIC D 16 40 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -55 to 125 HC259M
CD74HC259MT ACTIVE SOIC D 16 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -55 to 125 HC259M
CD74HC259MTE4 ACTIVE SOIC D 16 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -55 to 125 HC259M
CD74HC259MTG4 ACTIVE SOIC D 16 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -55 to 125 HC259M
CD74HCT259E ACTIVE PDIP N 16 25 Pb-Free
(RoHS) CU NIPDAU N / A for Pkg Type -55 to 125 CD74HCT259E
CD74HCT259EE4 ACTIVE PDIP N 16 25 Pb-Free
(RoHS) CU NIPDAU N / A for Pkg Type -55 to 125 CD74HCT259E
CD74HCT259M ACTIVE SOIC D 16 40 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -55 to 125 HCT259M
PACKAGE OPTION ADDENDUM
www.ti.com 25-Sep-2013
Addendum-Page 2
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
CD74HCT259M96 ACTIVE SOIC D 16 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -55 to 125 HCT259M
CD74HCT259M96E4 ACTIVE SOIC D 16 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -55 to 125 HCT259M
CD74HCT259M96G4 ACTIVE SOIC D 16 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -55 to 125 HCT259M
CD74HCT259ME4 ACTIVE SOIC D 16 40 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -55 to 125 HCT259M
CD74HCT259MG4 ACTIVE SOIC D 16 40 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -55 to 125 HCT259M
CD74HCT259MT ACTIVE SOIC D 16 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -55 to 125 HCT259M
CD74HCT259MTE4 ACTIVE SOIC D 16 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -55 to 125 HCT259M
CD74HCT259MTG4 ACTIVE SOIC D 16 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -55 to 125 HCT259M
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
PACKAGE OPTION ADDENDUM
www.ti.com 25-Sep-2013
Addendum-Page 3
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OTHER QUALIFIED VERSIONS OF CD54HC259, CD54HCT259, CD74HC259, CD74HCT259 :
•Catalog: CD74HC259, CD74HCT259
•Military: CD54HC259, CD54HCT259
NOTE: Qualified Version Definitions:
•Catalog - TI's standard catalog product
•Military - QML certified for Military and Defense Applications
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0 (mm) B0 (mm) K0 (mm) P1
(mm) W
(mm) Pin1
Quadrant
CD74HC259M96 SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
CD74HCT259M96 SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 19-Mar-2008
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
CD74HC259M96 SOIC D 16 2500 333.2 345.9 28.6
CD74HCT259M96 SOIC D 16 2500 333.2 345.9 28.6
PACKAGE MATERIALS INFORMATION
www.ti.com 19-Mar-2008
Pack Materials-Page 2
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