SIEMENS Silicon RF Switching Diode BAT 18... @ Low-loss VHF/UHF switch above 10 MHz @ Pin diode with low forward resistance VPS05164 Type Marking Ordering Code | Pin Configuration Package) BAT 18 A2 Q62702-A787 1 3 |SOT 23 o Bt BAT 18-04 AU Q62702-A938 3 1 py py 2 EHAQ7005 BAT 18-05 AS Q62702-A940 BAT 18-06 AT Q62702-A942 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage Va 35 Vv Forward current Ir 100 mA Operating and Top 55... + 150 | C storage temperature range Tag Thermal Resistance Junction - ambient Rina < 450 K/AW 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 287 07.94SIEMENS BAT 18... Electrical Characteristics per Diode at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Forward voltage Ve - 0.38 1.2 Vv iz 100 mA Reverse current Tr nA Va = 20 V > - 20 Va = 20 V, Ta= 60C - - 200 Diode capacitance - 0.75 1 pF Va=20 Vf=1MHz Forward resistance ~ 0.4 0.7 Q Ip =5 mA, f= 100 MHz Series inductance - 2 - nH Diode capacitance Cr =f (Vr) f= 1 MHz BAT 18... EHDO7019 2.0 pF Cy 1.8 t 0.8 0.6 0.4 0.2 0.0 Semiconductor Group Forward resistance r= f (Ir) f= 100 MHz 10! BAT 18... HDO7020 rs Q 10 107! 107! 10 10! sma 108 ae L, 288