1
T ransmissive Photosensors (Photo Interrupters)
CNA1311K
Photo Interrupter
For contactless SW, object detection
Overview
CNA1311K is an ultraminiature, highly reliable transmissive
photosensor in which a high efficiency GaAs infrared light emitting diode
chip and a high sensitivity Si phototransistor chip are integrated in a
double molded resin package.
*1 Input power derating ratio is
1.0mW/˚C at Ta ≥ 25˚C.
*2 Output power derating ratio is
1.0mW/˚C at Ta ≥ 25˚C.
*3 Soldering time is within 5 seconds.
,,
,
(1.8)
13
24
4.0
1.5 1.0 1.5
*3.0
2.3
3.3
5.0 min.
+0.2
–0.1
2-0.2
(0.9)
A'
A
(1.5)
A side
With gate
A Side or B Side
B side
(0.15)
2.6
*2.0
2-0.4
Not soldered
1.0 max.
1.5
(0.45)
SEC. A-A'
Slit width
(0.15)
2-0.5
Optical
center (C0.5)
13
24
Unit : mm
3: Collecter
4: Emitter
1: Anode
2: Cathode
Pin connection
(Note)
1. Tolerance unless otherwise specified is ±0.2
2. ( ) Dimension is reference
3. * is dimension at the root of leads
,,
,,,
,,
more than 1mm
Soldering bath
,,
,
,
(Input pulse)
(Output pulse)
50ΩRL
td : Delay time
tr : Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
tf : Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
VCC
Sig.OUT 10%
90%
Sig.IN
tdtrtf
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol
Ratings Unit
Input (Light
Reverse voltage (DC) VR6V
emitting diode)
Forward current (DC) IF50 mA
Power dissipation PD*1 75 mW
Collector current IC20 mA
Output (Photo
Collector to emitter voltage
VCEO 35 V
transistor)
Emitter to collector voltage
VECO 6V
Collector power dissipation
PC*2 75 mW
Operating ambient temperature
Topr –25 to +85 ˚C
Temperature Storage temperature Tstg
–40 to +100
˚C
Soldering temperature Tsol*3 260 ˚C
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions min typ max Unit
Input
Forward voltage (DC) VFIF = 20mA 1.2 1.4 V
characteristics
Reverse current (DC) IRVR = 3V 10 µA
Output characteristics
Collector cutoff current ICEO VCE = 20V 100 nA
Transfer
Collector current ICVCE = 5V, IF = 5mA 50 600 µA
characteristics
Collector to emitter saturation voltage
VCE(sat) IF = 10mA, IC = 40µA 0.4 V
Response time tr , tf*
V
CC
= 5V, I
C
= 0.1mA, R
L
= 1000Ω
50 µs
* Switching time measurement circuit
Features
Ultraminiature : 2.6 × 4.0 mm (height : 3.3 mm)
Highly precise position detection : 0.05 mm
Gap width : 1.0 mm
2
CNA1311K Transmissive Photosensors (Photo Interrupters)
I
F
, I
C
— Ta
Forward current, collector current I
F
, I
C
(mA)
I
C
— Ta
120
80
60
40
20
100
Ambient temperature Ta (˚C )
Relative output current I
C
(%)
0
V
CE
= 5V
I
F
= 5mA
I
C
— V
CE
3
1
2
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
1234 65
0
0
Ta = 25˚C
I
C
— I
F
5
3
2
1
4
Forward current I
F
(mA)
Collector current I
C
(mA)
5 10152025
0
0
V
CE
= 5V
Ta = 25˚C
I
CEO
— Ta
1
10
–3
10
–1
10
–4
10
–2
Ambient temperature Ta (˚C )
V
CE
= 20V
Dark current I
CEO
(µA)
10
–5
V
F
— Ta
1.6
1.2
0.8
0.4
Ambient temperature Ta (˚C )
Forward voltage V
F
(V)
0 20406080100
0
– 40 – 20
0 20406080100– 40 – 20
0 20406080100– 40 – 20
60
50
40
30
20
10
Ambient temperature Ta (˚C )
0 20406080100
0
– 25
11010
–1
t
r
— I
C
10
1
Collector current I
C
(mA)
Rise time t
r
(µs)
10
–1
10
–2
10
3
10
2
V
CC
= 5V
10
–1
t
f
— I
C
Collector current I
C
(mA)
Fall time t
f
(µs)
10
–1
11010
–2
10
2
10
1
10
3
V
CC
= 5V
I
F
— V
F
60
30
20
10
50
40
Forward voltage V
F
(V)
Forward current I
F
(mA)
0.4 0.8 1.2 1.6 2.42.0
00
Ta = 25˚C
10mA
1mA
I
F
= 50mA
I
F
I
C
I
F
= 20mA
10mA
15mA
5mA
2mA
100Ω
R
L
= 2kΩ
1kΩ
100Ω
R
L
= 2kΩ
1kΩ
10%
90%
t
d
t
r
t
f
R
L
V
CC
Sig.
OUT
Sig.
OUT
50Ω
Sig.IN
,,
,
10%
90%
t
d
t
r
t
f
R
L
V
CC
Sig.
OUT
Sig.
OUT
50Ω
Sig.IN
,
,
,
3
Transmissive Photosensors (Photo Interrupters) CNA1311K
Distance d (mm)
I
C
— d
100
60
40
20
80
Relative output current I
C
(%)
2.01.61.20.80.4
00
V
CE
= 5V
Ta = 25˚C
I
F
= 5mA
Distance d (mm)
I
C
— d
100
60
40
20
80
Relative output current I
C
(%)
2.01.61.20.80.4
00
V
CE
= 5V
Ta = 25˚C
I
F
= 5mA
d
Criterion
0
,,
,
d
,
,,
Criterion 0
