IRF452,453 12 AMPERES 500, 450 VOLTS FIDS(ON) = 0.5 0 s cS XOWER MOS FE FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. N-CHANNEL This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors. Features Ss CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0,.845(21,47) boa = : = f SEATING PLANE r- 368(9.09) MAX .065(1 5 MAX, cc sas _ . _ 0,043( 1.09). ; ,428(10.82} MIN, Polysilicon gate Improved stability and reliability BOMB) aia, of be e No secondary breakdown Excellent ruggedness SAX 6757.18 0,650(16.51) e Ultra-fast switching Independent of temperature r Voltage controlled High transconductance GaST TEMP. tual Low input capacitance Reduced drive requirement POINT 1.873(39.96) MAX. Le 0,228(5.72) DRAIN e Excellent thermal stability Ease of paralleling DRAIN 9: 0.182(4.08) DIA. 0.205(5.21) (CASE) 0.15(3.84} 2 HOLES 9.440(11.18) 0.420(10.67) maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF452 IRF453 UNITS Drain-Source Voltage Voss 500 450 Volts Drain-Gate Voltage, Rag = 1MO. VpGR 500 | 450 Volts Continuous Drain Current @ To = 26C Ip 12 12 A To = 100C 7 7 A Pulsed Drain Current" lpm 48 48 A Gate-Source Voltage Ves +20 +20 Volts Total Power Dissipation @ To = 26C Pp 150 150 Watts Derate Above 25C 1.2 1.2 W/C Operating and Storage Junction Temperature Range Ty, Tste -55 to 150 ~55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rec 0.83 0.83 C/W Thermal Resistance, Junction to Ambient Raja 30 30 CAV Maximum Lead Temperature for Soldering Purposes: %" from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 171electrical characteristics (Tc = 25C) (unless otherwise specified) } CHARACTERISTIC | SYMBOL | MIN | TYP | MAX UNIT | off characteristics Drain-Source Breakdown Voltage IRF452 BVpss 500 _ _ Volts (Vas = OV, Ip = 250 pA) IRF453 450 _ _ Zero Gate Voltage Drain Current Ipss (Vps = Max Rating, Veg = OV, To = 25C) _ _ 250 uA (Vps = Max Rating, 0.8, Veg = OV, To = 125C) _ _ 1000 Gate-Source Leakage Current on characteristics Gate Threshold Voltage To = 25C | VasctH) 2.0 _ 4.0 Volts (Vos = Vas, Ip = 250 A) On-State Drain Current \ 12 _ _ A (Vag = 10V, Vps = 10V)_ D(ON) Static Drain-Source On-State Resistance _ (Vas = 10V, Ip = 7A) Rps(ON) 0.4 0.5 Ohms Forward Transconductance _ (Vps = 10V, Ip = 7A) Sts 4.8 7.0 mhos dynamic characteristics Input Capacitance Vas = 0V Ciss _ 2800 3000 pF Output Capacitance Vps = 25V Coss _ 330 600 pF Reverse Transfer Capacitance f= 1MHz Crss 55 200 pF switching characteristics Turn-on Delay Time Vos = 225V ta(on) _ 25 _ ns Rise Time Ip = 7A, Vag = 15V tr _ 20 _ ns Turn-off Delay Time Regen = 500, Rag = 12.50 | taroff) _ 120 ~ ns Fall Time (Ras (Equiv. = 100) tf _ 65 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 12 A Pulsed Source Current Ism _ _ 48 A Diode Forward Voltage Vv _ 0.9 13 Volts (To = 25C, Vas = OV, Ig = 12A) SD Reverse Recovery Time ter _ 590 _ ns (Ig = 13A, dig/dt = 100A/usec, To = 125C) Qar _ 7.4 _ uC *Pulse Test: Pulse width <= 300 us, duty cycle <= 2% 100 - 80 60 40 20 0 0.8 OPERATION IN THIS AREA 0.6 F MAY BE LIMITED BY R ip. DRAIN CURRENT (AMPERES) S S SINGLE PULSE 0.2 To = 25C 1 2. 4 6 810 20 40 6080100 200 400 600 7000 Vps- DRAIN-SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 172 Rosion) AND VegitH) NORMALIZED 40 CONDITIONS: RDS(ON) CONDITIONS: Ip = 7.0, Vag = 10V V@s(TH) CONDITIONS: Ip = 250yA, Vg = Vas Q 40 Ty, JUNCTIGN TEMPERATURE (C) 80 Rosion) 120 160