BU406, BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A Peak Collector Current 60 W at 25C Case Temperature TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING BU406 Collector-base voltage (IE = 0) BU407 BU406 Collector-emitter voltage (VBE = -2 V) BU407 BU406 Collector-emitter voltage (IB = 0) BU407 Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature Operating junction temperature range Storage temperature range NOTE SYMBOL V CBO VCEX VCEO VALUE 400 330 400 330 200 150 UNIT V V V VEB 6 IC 7 A ICM 15 A V IB 4 A Ptot 60 W Tj -55 to +150 C Tstg -55 to +150 C 1: This value applies for tp 10 ms, duty cycle 2%. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BU406, BU407 NPN SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER V(BR)CEO ICES IEBO hFE VCE(sat) VBE(sat) ft Cob Collector-emitter breakdown voltage TEST CONDITIONS IC = 30 mA MIN IB = 0 TYP MAX 140 V 5 VCE = 400 V VBE = 0 BU406 VCE = 330 V VBE = 0 BU407 5 Collector-emitter VCE = 250 V VBE = 0 BU406 0.1 cut-off current VCE = 200 V VBE = 0 BU407 0.1 VCE = 250 V VBE = 0 TC = 150C BU406 1 VCE = 200 V VBE = 0 TC = 150C BU407 1 VEB = 6V IC = 0 Forward current VCE = 10 V IC = transfer ratio VCE = 10 V IC = 0.5 A IB = 0.5 A IC = 5A IB = 0.5 A IC = 5A Emitter cut-off current Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance VCE = 5V VCB = 20 V 4A UNIT mA 1 mA (see Notes 2 and 3) 1 V (see Notes 2 and 3) 1.2 V 12 (see Notes 2 and 3) IC = 0.5 A f = 1 MHz IE = 0 f = 1 MHz 20 (see Note 4) 6 MHz 60 pF NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. 4. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1. thermal characteristics PARAMETER RJC Junction to case thermal resistance RJA Junction to free air thermal resistance MIN TYP MAX UNIT 2.08 C/W 70 C/W inductive-load-switching characteristics at 25C case temperature (unless otherwise noted) PARAMETER ts Storage time t(off) Turn off time TEST CONDITIONS IC = 5 A IB(end) = 0.5A MIN MAX 2.7 (see Figures 1 and 2) UNIT s 750 ns Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BU406, BU407 NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION V BB+ V cc = 24V 5.6 47 SET IB 22 TIP32 100 +4V 7.5 240 H 100 TIP32 BY205 Current Probes 50 5 pF INPUT 0 1 k 2N5337 14.8 H TUT OUTPUT BY205 2N6191 TIP31 TIP31 TIP31 22 22 V BB- Figure 1. Inductive-Load Switching Test Circuit 64 s 42 s IB I B(end) 50% 0 t s IC 0.1 A 0 t off toff is the time for the collector current IC to decrease to 0.1 A after the collector to emitter Vfly voltage V CE has risen 3 V into V CE its flyback excursion. 0 3V Figure 2. Inductive-Load Switching Waveforms AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BU406, BU407 NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TCD124AA 70 TCD124AB 50 TC = 25C tp < 300 s d < 2% tp < 300 s d < 2% VCE = 5 V TC = 100C hFE - Typical DC Current Gain hFE - Typical DC Current Gain 60 TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 50 40 TC = 25C 30 20 40 30 20 10 10 0 0*1 VCE = 1 V VCE = 5 V VCE = 10 V TC = -55C 1*0 0 0*1 10 IC - Collector Current - A 1*0 10 IC - Collector Current - A Figure 3. Figure 4. VCE(sat) - Collector-Emitter Saturation Voltage - V COLLECTOR-EMITTER SATURATION VOLTAGE vs CASE TEMPERATURE TCD124AC 0*8 tp < 300 s d < 2% 0*7 0*6 IC = 8 A IB = 2 A 0*5 0*4 0*3 IC = 4 A IB = 0.5 A 0*2 0*1 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC - Case Temperature - C Figure 5. 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BU406, BU407 NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 10 SAD124AA 1*0 0*1 BU407 BU406 0.01 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 6. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Bourns: BU406-S