Dual Enhancement Mode MOSFET (N and P-Channel)
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM2700C
Features
Applications
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
Pin Description
Ordering and Marking Information
APM2700C
Handling Code
Temp. Range
Package C ode
Package C ode
C : SOT- 2 6
O perating Junction T em p. Range
C : -55 to 150°C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free C ode
L : Lead Free Device Blank : O riginal D evice
APM 2700C C : M70X XXXXX - Date Code
Lead Free C ode
Top View of SOT-26
• N-Channel
20V/1.8A,
RDS(ON)=170mΩ(typ.) @ VGS=4.5V
RDS(ON)=270mΩ(typ.) @ VGS=2.5V
••
••
• P-Channel
-20V/-1.2A,
RDS(ON)=360mΩ(typ.) @ VGS=-4.5V
RDS(ON)=530mΩ(typ.) @ VGS=-2.5V
••
••
• Super High Dense Cell Design
••
••
• Reliable and Rugged
••
••
• Lead Free Available (RoHS Compliant)
N-Channel MOSFET P-Channel MOSFET
G2
S2
D2
(4)
(2)
(3)
(6)
(1)
(5)
S1
D1
G1
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw2
APM2700C
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Electrical Characteristics (TA = 25°C unless otherwise noted)
Note:
*Surface Mounted on 1in2 pad area, t ≤ 10sec.
Symbol Parameter N Channel P Channel Unit
VDSS Drain-Source Voltage 20 -20
VGSS Gate-Source Voltage ±8 ±8
V
ID* Continuous Drain Current 1.8 -1.2
IDM* 300µs Pulsed Drain Current VGS=± 4.5V 6 -5
A
IS* Diode Continuous Forward Current 1 -1
A
TJ Maximum Junction Temperature 150
TSTG Storage Temperature Range -55 to 150 °C
TA=25°C 0.83
PD* Power Dissipation TA=100°C 0.3 W
RθJA* Thermal Resistance-Junction to Ambient 150 °C/W
APM2700C
Symbol Parameter Test Condition Min. Typ. Max. Unit
Static Characteristics VGS=0V, IDS=250µA N-Ch 20
BVDSS Drain-Source Breakdown
Voltage VGS=0V, IDS=-250µA P-Ch -20 V
VDS=16V, VGS=0V 1
T
J=85°C N-Ch 30
VDS=-16V, VGS=0V -1
IDSS Zero Gate Voltage Drain
Current
T
J=85°C P-Ch -30
µA
VDS=VGS, IDS=250µA N-Ch 0.45 0.6 1.2
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA P-Ch -0.45 -0.6 -1.2 V
VGS=±8V, VDS=0V N-Ch
±2
µA
IGSS Gate Leakage Current VGS=±8V, VDS=0V P-Ch
±100
nA
VGS=4.5V, IDS=1.8A N-Ch 170 220
VGS=-4.5V, IDS=-1.2A P-Ch 360 470
VGS=2.5V, IDS=0.9A N-Ch 270 350
RDS(ON) a Drain-Source On-State
Resistance
VGS=-2.5V, IDS=-0.7A P-Ch 530 690
mΩ
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw3
APM2700C
APM2700C
Symbol Parameter Test Condition Min. Typ. Max. Unit
Static Characteristics (Cont.) ISD=0.5 A, VGS=0V N-Ch 0.8 1.3
VSDa Diode Forward Voltage ISD=-0.5A, VGS=0V P-Ch -0.8 -1.3
V
Dynamic Ch aracteristics b N-Ch 130
Ciss Input Capacitance P-Ch 140
N-Ch 25
Coss Output Capacitance P-Ch 40
N-Ch 15
Crss Reverse Transfer
Capacitance
N-Channel
VGS=0V,
VDS=20V,
Frequency=1.0MH z
P-Channel
VGS=0V,
VDS=-20V,
Frequency=1.0MH z P-Ch 30
pF
N-Ch 2 4
td(ON) Turn-on Delay Time P-Ch 3 6
N-Ch 17 32
Tr Turn-on Rise Time P-Ch 18 33
N-Ch 4 8
td(OFF) Turn-off D elay T ime P-Ch 10 19
N-Ch 18 33
Tf Turn-off Fall Time
N-Channel
VDD=10V, RL=10Ω,
IDS=1A, VGEN=4.5V,
RG=6Ω
P-Channel
VDD=-10V, RL=10Ω,
IDS=-1A, VGEN=-4.5V,
RG=6Ω
P-Ch 20 37
ns
Gate Ch arge C h aracteristics b N-Ch 4.2 5.5
Qg Total Gate Charge P-Ch 7 9
N-Ch 0.6
Qgs Gate-Source Charge P-Ch 1.1
N-Ch 0.6
Qgd Gate-Drain Charge
N-Channel
VDS=10V, VGS=4.5V,
IDS=1.8A
P-Channel
VDS=-10V, VGS=-4.5V,
IDS=-1.2A P-Ch 1.1
nC
Notes:
a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%.
b : Guaranteed by design, not subject to production testing.
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw4
APM2700C
1E-4 1E-3 0.01 0.1 1 10 100
1E-3
0.01
0.1
1
2
Mounted on 1in2 pad
RθJA : 150 oC/W
0.01
0.02
0.05
0.1
0.2
Single Pulse
Duty = 0.5
Typical Characteristics
ID - Drain Current (A)
Drain Current
Tj - Junction Temperature (°C)
Safe Operation Area
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
Square Wave Pulse Duration (sec)
Power Dissipation
Ptot - Power (W)
Tj - Junction T emperature (°C)
ID - Drain Current (A)
N-Channel
0 20406080100120140160
0.0
0.2
0.4
0.6
0.8
1.0
0 20406080100120140160
0.0
0.4
0.8
1.2
1.6
2.0
0.1 1 10 50
0.02
0.1
1
10
20
Rds(on) Li m it
1s
TA=25oC
10ms
300µs
1ms
100ms
DC
Normalized Transient Thermal Resistance
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw5
APM2700C
RDS(ON) - On - Resistance (mΩ)
Drain-Source On Resistance
ID - Drain Current (A)
Tj - Junction Temperature (°C)
Gate Threshold Voltage
VDS - Drain - Source Voltage (V)
ID - Drain Current (A)
Output Characteristics
T ransfer Characteristics
VGS - Gate - Source Voltage (V)
ID - Drain Current (A)
Normalized Threshold V oltage
Typical Characteristics (Cont.)
0.0 0.8 1.6 2.4 3.2 4.0
0
1
2
3
4
5
6
Tj=125oC
Tj=25oC
Tj=-55oC
-50 -25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4 IDS=250µA
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
2.5V
2V
3V
1.5V
VGS= 4,5,6,7,8,9,10V
N-Channel
0123456
100
150
200
250
300
350
VGS=2.5V
VGS=4.5V
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw6
APM2700C
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
Normalized On Resistance
Tj - Junction Temperature (°C)
C - Capacitance (pF)
VSD - Source - Drain Voltage (V)
Source-Drain Diode Forward
IS - Source Current (A)
Capacitance Gate Charge
QG - Gate Charge (nC)
VGS - Gate - source Voltage (V)
Typical Characteristics (Cont.)
-50 -25 0 25 50 75 100 125 150
0.50
0.75
1.00
1.25
1.50
1.75 VGS = 4.5V
IDS = 1.8A
RON@Tj=25oC: 170mΩ
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.01
0.1
1
6
Tj=150oC
Tj=25oC
0 4 8 121620
0
40
80
120
160
200 Frequency=1MHz
Crss Coss
Ciss
012345
0
1
2
3
4
5VDS=10V
IDS =1.8A
N-Channel
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw7
APM2700C
1E-4 1E-3 0.01 0.1 1 10 100
1E-3
0.01
0.1
1
2
Mounted on 1in2 pad
RθJA : 150 oC/W
0.01
0.02
0.05
0.1
0.2
Single Pulse
Duty = 0.5
Typical Characteristics
-ID - Drain Current (A)
Drain Current
Tj - Junction Temperature (°C)
Safe Operation Area
-VDS - Drain - Source V oltage (V)
Thermal Transient Impedance
Square Wave Pulse Duration (sec)
Power Dissipation
Ptot - Power (W)
Tj - Junction Temperature (°C)
-ID - Drain Current (A)
P-Channel
0 20406080100120140160
0.0
0.2
0.4
0.6
0.8
1.0
0 20406080100120140160
0.0
0.3
0.6
0.9
1.2
1.5
0.1 1 10 50
0.01
0.1
1
10
20
Rds(on) Limit
1s
TA=25oC
10ms
300µs
1ms
100ms
DC
Normalized Transient Thermal Resistance
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw8
APM2700C
RDS(ON) - On - Resistance (mΩ)
Drain-Source On Resistance
-ID - Drain Current (A)
Tj - Junction Temperature (°C)
Gate Threshold Voltage
-VDS - Drain - Source Voltage (V)
-ID - Drain Current (A)
Output Characteristics
T ransfer Characteristics
-VGS - Gate - Source Voltage (V)
-ID - Drain Current (A)
Normalized Threshold V oltage
Typical Characteristics (Cont.)
01234
0
2
4
6
8
10
-4V
-2V
-3V
VGS= -5,-6,-7,-8,-9,-10V
01234
0
1
2
3
4
5
6
Tj=125oC
Tj=25oC
Tj=-55oC
-50 -25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4 IDS=-250µA
0123456
100
200
300
400
500
600
700
800
VGS= -2.5V
VGS= -4.5V
P-Channel
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw9
APM2700C
-VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
Normalized On Resistance
Tj - Junction Temperature (°C)
C - Capacitance (nC)
-VSD - Source - Drain Voltage (V)
Source-Drain Diode Forward
-IS - Source Current (A)
Capacitance Gate Charge
QG - Gate Charge (nC)
-VGS - Gate - source Voltage (V)
Typical Characteristics (Cont.)
-50 -25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
RON@Tj=25oC: 36 0m Ω
VGS = - 4.5 V
IDS = - 1.2 A
0 4 8 121620
0
50
100
150
200
250 Frequency=1MHz
Crss
Coss
Ciss
012345678
0
1
2
3
4
5VDS= -10V
IDS= -1.2A
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.3
1
6
Tj=150oC
Tj=25oC
P-Channel
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw10
APM2700C
Packaging Information
SOT-23-6
Millimeters Inches
Dim Min. Max. Min. Max.
A 1.00 1.45 0.0394 0.0571
A1 0.00 0.15 0.0000 0.0591
A2 0.70 1.25 0.0276 0.0492
b 0.35 0.55 0.0138 0.0217
D 2.70 3.10 0.1063 0.1220
E 1.40 1.80 0.50551 0.0709
e 1.90 BSC 0.07480 BSC
H 2.60 3.00 0.1024 0.1181
L 0.30 - 000118 -
L1 0.08 0.25 0.0031 0.0098
L2 0.60 REF 0.024 REF
α0°10°0°10°
S1 0.85 1.05 0.0335 0.0413
D
E H
123
46
S1
D
A2 A
A1 L2 L
L1
α
e
5
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw11
APM2700C
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
t 2 5 C to Pe a k
tp
Ramp-up
tL
Ramp-down
ts
Preheat
Tsmax
Tsmin
TL
TP
25
Temperature
Time
Critical Z one
TL to TP
°
Reflow Condition (IR/Convection or VPR Reflow)
Classificatin Reflow Profiles
Physical Specifications
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate
(TL to TP) 3°C/second max. 3°C/second max.
Preheat
- Temperature Min (T s min)
- Temperature Max (T smax)
- Time (min to max) (ts)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
- Temperature (TL)
- Time (tL) 183°C
60-150 seconds 217°C
60-150 seconds
Peak/Classificatioon Temperature (Tp) See table 1 See table 2
Time within 5°C of actual
Peak Temperature (tp) 10-30 seconds 20-40 seconds
Ramp-down Rate 6°C/second max. 6°C/second max.
Time 25 °C to Peak Temperature 6 minutes max. 8 minutes max.
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw12
APM2700C
Carrier Tape & Reel Dimensions
t
Ao
E
W
Po P
Ko
Bo
D1
D
F
P1
Test item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Reliability Test Program
Table 1. SnPb Entectic Process – P ac k age P ea k Reflow Temperatures
Pack age T h ickn ess Vo lu m e m m3
<350 Volume mm3
≥350
< 2.5 mm 24 0 +0/-5°C 225 +0/-5°C
≥2.5 mm 225 +0/-5°C 225 +0/-5°C
Table 2. Pb-free Process – Pac kage C lass ification Reflow T emperatu res
Packag e T hickness Vo lume m m3
<350 Vo lu me m m3
350-2000 V o lu me mm3
>2000
< 1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*
1.6 m m – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*
≥2.5 m m 250 +0°C* 245 +0°C* 245 +0°C*
*Tolerance : T he device m anufacturer/sup plier shall a s s ur e p roc e ss c ompa tibility u p to a n d
including th e stated clas sification tem perature (th is means P eak reflow temperature +0°C.
For example 260°C+0°C) at the rated M S L level.
Classificatin Reflow Profiles(Cont.)
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw13
APM2700C
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin T ien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Cover Tape Dimensions
Application Carrier Width Cover Tap e Width Devices Per Reel
SOT-23-6 8 5.3 3000
Carrier Tape & Reel Dimensions(Cont.)
A
J
B
T2
T1
C
Application A B C J T1 T2 W P E
178±1 72 ± 1.0 13.0 + 0.2 2.5 ± 0.15 8.4 ± 2 1.5 ± 0.3 8.0+ 0.3
- 0.3 4 ± 0.1 1.75± 0.1
F D D1 Po P1 Ao Bo Ko t
SOT-23-6
3.5 ± 0.05 1.5 +0.1 1.5 +0.1 4.0 ± 0.1 2.0 ± 0.1 3.15 ± 0.1 3.2 ± 0.1 1.4± 0. 1 0.2±0.03
(mm)
