VS-15CTQ...SPbF, VS-15CTQ...-1PbF Series
www.vishay.com Vishay Semiconductors
Revision: 23-May-14 1Document Number: 94140
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 2 x 7.5 A
FEATURES
150 °C TJ operation
Center tap TO-220 package
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long term
reliability
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-15CTQ... center tap Schottky rectifier series has
been optimized for very low forward voltage drop, with
moderate leakage. The proprietary barrier technology allows
for reliable operation up to 150 °C junction temperature.
Typical applications are in switching power supplies,
converters, freewheeling diodes, and reverse battery
protection.
PRODUCT SUMMARY
Package D2PAK, TO-262
IF(AV) 2 x 7.5 A
VR35 V, 40 V, 45 V
VF at IF0.51 V
IRM 32 mA at 125 °C
TJ max. 150 °C
Diode variation Common cathode
EAS 10 mJ
V
S-15CTQ...SPbFVS-15CTQ...-1PbF
D
2
PAK TO-262
Base
common
cathode
A
node Anode
Common
cathode
13
2
2
Base
common
cathode
Anode Anode
Common
cathode
13
2
2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 15 A
VRRM Range 35 to 45 V
IFSM tp = 5 μs sine 810 A
VF7.5 Apk, TJ = 125 °C (per leg) 0.51 V
TJRange -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-15CTQ035SPbF
VS-15CTQ035-1PbF
VS-15CTQ040SPbF
VS-15CTQ040-1PbF
VS-15CTQ045SPbF
VS-15CTQ045-1PbF UNITS
Maximum DC reverse voltage VR35 40 45 V
Maximum working peak reverse voltage VRWM
VS-15CTQ...SPbF, VS-15CTQ...-1PbF Series
www.vishay.com Vishay Semiconductors
Revision: 23-May-14 2Document Number: 94140
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle at TC = 123 °C, rectangular waveform 15 A
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
IFSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
VRRM applied
810
A
10 ms sine or 6 ms rect. pulse 145
Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 1.20 A, L = 11.10 mH 10 mJ
Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 1.5 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1 VFM (1)
7.5 A TJ = 25 °C 0.55
V
15 A 0.70
7.5 A TJ = 125 °C 0.51
15 A 0.65
Maximum reverse leakage current per leg
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
0.8 mA
TJ = 125 °C 32
Maximum junction capacitance per leg CTVR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 400 pF
Typical series inductance per leg LSMeasured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg -55 to +150 °C
Maximum thermal resistance,
junction to case per leg RthJC
DC operation
See fig. 4 3.50
°C/W
Maximum thermal resistance,
junction to case per package DC operation 1.75
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.50
Approximate weight 2g
0.07 oz.
Mounting torque
minimum 6 (5) kgf · cm
(lbf · in)
maximu
m12 (10)
Marking device Case style D2PAK 15CTQ045S
Case style TO-262 15CTQ045-1
VS-15CTQ...SPbF, VS-15CTQ...-1PbF Series
www.vishay.com Vishay Semiconductors
Revision: 23-May-14 3Document Number: 94140
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
0.1
10
100
IF - Instantaneous Forward Current (A)
VFM - Forward Voltage Drop (V)
0 0.4 0.8 1.2 1.6 2.0
1
1.41.00.60.2
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1.8
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
01020
30 45
0.01
0.1
1
10
100
540
0.001
352515
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
0 20304050
100
1000
10
TJ = 25 °C
ZthJC - Thermal Impedance (°C/W)
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
0.00001 0.0001 0.001 0.01 0.1 1 10 100
.
.
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
Single pulse
(thermal resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
VS-15CTQ...SPbF, VS-15CTQ...-1PbF Series
www.vishay.com Vishay Semiconductors
Revision: 23-May-14 4Document Number: 94140
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Fig. 8 - Unclamped Inductive Test Circuit
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
08124
125
130
135
145
155
2610
15CTQ
RthJC (DC) = 3.50 °C/W
DC
140
150
0
2
5
7
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
0812
6
3
1
642 10
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
RMS limit
DC
4
I
FSM
- Non-Repetitive Surge Current (A)
t
p
- Square Wave Pulse Duration (µs)
100
1000
10 100 1000 10 000
At any rated load condition
and with rated V applied
following surge RRM
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
VS-15CTQ...SPbF, VS-15CTQ...-1PbF Series
www.vishay.com Vishay Semiconductors
Revision: 23-May-14 5Document Number: 94140
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95014
Part marking information www.vishay.com/doc?95008
Packaging information www.vishay.com/doc?95032
035 = 35 V
040 = 40 V
045 = 45 V
2- Current rating (15 A)
3- Circuit configuration: C = common cathode
4- T = TO-220
5- Schottky “Q” series
6- Voltage ratings
7- S = D2PAK
-1 = TO-262
8- None = tube (50 pieces)
TRL = tape and reel (left oriented - for D2PAK only)
TRR = tape and reel (right oriented - for D2PAK only)
- PbF = lead (Pb)-free
9
1- Vishay Semiconductors product
Device code
51 32 4 6 7 8 9
VS- 15 C T Q 045 S TRL PbF
Document Number: 95014 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 31-Mar-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
D2PAK, TO-262
Outline Dimensions
Vishay Semiconductors
DIMENSIONS - D2PAK in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC outline TO-263AB
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
c
B
Detail A
c2
AA
A
± 0.004 B
M
A
Lead tip
(3)
(3)
View A - A
(E)
(D1)
E1
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c) c1
Base
Metal
Plating
Conforms to JEDEC outline D2PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010 AB
MM
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 95014
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 31-Mar-09
Outline Dimensions
Vishay Semiconductors D2PAK, TO-262
DIMENSIONS - TO-262 in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Outline conform to JEDEC TO-262 except A1 (maximum), b
(minimum) and D1 (minimum) where dimensions derived the
actual package outline
SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190
A1 2.03 3.02 0.080 0.119
b 0.51 0.99 0.020 0.039
b1 0.51 0.89 0.020 0.035 4
b2 1.14 1.78 0.045 0.070
b3 1.14 1.73 0.045 0.068 4
c 0.38 0.74 0.015 0.029
c1 0.38 0.58 0.015 0.023 4
c2 1.14 1.65 0.045 0.065
D 8.51 9.65 0.335 0.380 2
D1 6.86 8.00 0.270 0.315 3
E 9.65 10.67 0.380 0.420 2, 3
E1 7.90 8.80 0.311 0.346 3
e 2.54 BSC 0.100 BSC
L 13.46 14.10 0.530 0.555
L1 - 1.65 - 0.065 3
L2 3.56 3.71 0.140 0.146
(4)
(4) Base
metal
Plating b1, b3
(b, b2)
c1
c
Section B - B and C - C
Scale: None
Section A - A
(3)
E1
(3)D1
E
B
A
A
A
c2
c
A1
Seating
plane
Lead tip
(3)
(2) (3)
(2)
A
E
(Datum A)
L1
L2
BB
CC
3
2
1
L
D
2 x e
3 x b2
3 x b
0.010 A B
MM
Modified JEDEC outline TO-262
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
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Revision: 08-Feb-17 1Document Number: 91000
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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