* , General x Semiconductor 2N3418 2N3419 2N3420 De - Industries, Inc. 2N3421 NPN SILICON POWER TRANSISTORS DIFFUSED SILICON EPITAXIAL PASSIVATED TRANSISTOR These NPN devices are designed fur use in high speed switching and medium power amplifier applications. JAN, JANTX, and JANTXV devices to MIL-S-19500/393 are available. The latest technologies are used to offer the highest degree of reliability. FEATURES Fast Switching * High Power Dissipation Low Leakage Current Low Saturation Voltage APPLICATIONS Switching Regulators * High Frequency Inverters Converters DC-RF Amplifiers ABSOLUTE MAXIMUM RATINGS i Maximum Temperatures Storage Temperature 65C to +200C we | m Operating Junction Temperature +200C 8 19 gm Lead Temperature (Soldering, 60 second time limit} +300C ies . ] oe ** 500" MIN. O18 ony Maximum Power Dissipation 1270 MIM mm {|= , Total Dissipation at 100C Case Temperature 15 Watts f sane Linear Derating Factor 0.15 W/C os 2N3418 =. 2N3419. ey Maximum Voltages and Current 2N2420 2N3421 Bini Vceo Collector to Emitter Voltage 60 Volts 80 Volts a8. ye Vero Collector to Base Voltage 85 Volts 125 Volts stm | AX Veso Emitter to Base Voltage 8 Volts 8 Volts ven a le Collector Current 3 Amps 3 Amps 100. a MECHANICAL CHARACTERISTICS Case: TO-5 Package Weight: 1.8 grams (maximum) Leads: Gold Plated Kovar 1, Emitter 2. Base 3. Collector Body marked with Logo ++ and type number *ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) 370 305 a Be ote py Also available in 15 lead length. 2N3418 2N3419 TEST 2N3420 2N3421 CHARACTERISTIC SYMBOL CONDITIONS MIN. MAX. MIN. MAX. UNITS t Collector to Emitter Sustaining Voltage Vceotsusi Io = 50mA, 1-=0 60 80 Volts Collector Cutoff Current Ioex Voce = B0OV, Veg = -0.5V 0.5 Amps Vee = 120V, Veg = -0.5V 05 u Amps Emitter Cutoff Current leBo Vea = 6V, I, =0 0.5 0.5 Amps Ven = 8V, Ig =0 10 10 Amps tCollector Saturation Voltage Vee (sat) le = 1A, fg = 100mA 0.25 0.25 Volts lo = 2A, Ig = 200mMA 0.5 0.5 Voits t Base Saturation Voltage Veelsnt) te = 1A, lg = 100mA 06 1.2 0.6 1.2 Vaits lg = 2A, Ig = 200mA 07 14 07 14 Voitts *+DC Current Gain (2N3418/19) hee lo = 1A, Vog = 2V 20 MIN. 60 MAX. TOC Current Gain (2N3420/21) hee Ie = 1A, Vee = 2V 40 MIN. 120 MAX. *JEDEC registered data. + Pulsa Conditions: Width = 10s, Duty Cycle = 2% (measured using Kelvin connections). General Semiconductor Industries, Inc. * 2001 W. Tenth Place, Tempe, AZ 85281 (602)968-3101 FAX: (602)966-6396 3-8General Semiconductor Industries, Inc. DYNAMIC CHARACTERISTICS 2N3418 2N3419 TEST 2N3420 2N3421 CHARACTERISTIC SYMBOL CONDITIONS MIN. MAX. MIN. MAX. UNITS Turn-On Time ton See Figure 2 0.3 0.3 Sec Turn-Off Time t off See Figure 2 1.2 1.2 Sec Collector Base Capacitance Cob Veet 10V, f=1MHz 150 150 pF Collector Gain-Bandwidth Product fy Ie=.1A, Vee=10V, f=20MHz 40 40 MHz JEDEG registered gata 10 6.0 Figure 1 20 MAXIMUM SAFE . OPERATING < REGION OUTPUT : 1.0 Pulse = 0.6 In 3 l ronFT as 5 03 = + = > = 8 3 1-5 90% Vec 20.3V 5 of Ww foo, Nir le" 1 Ame tonke -4top phe Ver? 6.4V ~ 0.06 10%) lees Tg2= 100mA . 90%: QUTPUT 0.03 Figure 2 VOLTAGE WAVEFORMS 2N3418, 2N3920 SWITCHING 2N 3419, 2N3421 CIRCUIT 0.01 1 10 80100 Vee - Collector-Emitter Voltage V STATIC FORWARD CURRENT TRANSFER RATIO STATIC FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT vs COLLECTOR CURRENT 125 200 Vee= 2V Figure 3 To = 150C Vce= 2V TYPICAL DC 8 CURRENT GAIN (2N3418 - 2N3419) z Tc = 100C ~ ow = tw eo hee = Static Forward Current Transfer Ratio bee = Static Forward Current Transfer Ratio 50 gol To = 25C Te= 25C Figure 4 25 TYPICAL DC CURRENT GAIN Te = 55 C Te = -BSC (2N3420 - 2N3421) 0 0.01 0.03 0.06 0.1 0.3 0.6 1.0 3.0 6.0 10 0.01 0.03 0.06 0.1 0.3 0.61.0 3.0 6.010 (. Collector Current A l Collector Current A General Semiconductor Industries, Inc. * 2001 W. Tenth Place, Tempe. AZ 85281 (602)968-3101 = FAX: (602)966-6396 3-9 = x > FJ 7 77 o =) x a BLP ae