MS2393
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The MS2393 is a gold metallized, silicon NPN power transistor.
The MS2393 is designed for applications requiring high peak power
and low duty cycles such as IFF, DME and TACAN. The MS2393 is
packaged in a metal/ceramic package with internal input/output
matching, resulting in improved broadband performance and low
thermal resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 65 V
VCES Collector-Emitter Voltage 65 V
VEBO Emitter-Base Voltage 3.5 V
IC Device Current 11 A
PDISS Power Dissipation 583 W
TJ Junction Temperature +200 °°C
TSTG Storage Temperature -65 to +150 °°C
Thermal Data
RTH(j-c) Junction-Case Thermal Resistance 0.30 °°C/W
FeaturesFeatures
• Designed For High Power Pulse IFF, DME, and TACAN
Applications
• 200 W (typ.) IFF 1030 – 1090 MHz
• 150 W (min.) DME 1025 – 1150 MHz
• 140 W (typ.) TACAN 960 – 1215 MHz
• 8.2 dB Gain
• Refractory Gold Metallization
• Ballasting And Low Thermal Resistance For Reliability
And Ruggedness
• 20:1 Load VSWR At Specified Operating Conditions
• Input And Output Matched Common Base
Configuration
RF AND MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS2393
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)C)
STATIC Value
Symbol Test Conditions Min. Typ. Max. Units
BVCBO IC = 10 mA IE = 0 mA 65 V
BVCES IC = 25 mA VBE = 0 V 65 V
BVEBO IE = 5 mA IC = 0 mA 3.5 V
ICES VCE = 50 V IE = 0 mA 10 mA
hFE VCE = 5 V IC = 300 mA 5
DYNAMIC Value
Symbol Test Conditions Min. Typ. Max. Units
POUT f = 1025 – 1150 MHz PIN = 25 W VCE = 50 V 150 W
GP f = 1025 – 1150 MHz PIN = 25 W VCE = 50 V 8.2 dB
Condition: Pulse Width = 10µµS, Duty Cycle = 1%
IMPEDANCE DATAIMPEDANCE DATA
MS2393
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
TYPICAL PERFOTYPICAL PERFORMANCERMANCE
MS2393
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
TEST CIRCUITTEST CIRCUIT
MS2393
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA
