Kinetis K22F Sub-Family Data
Sheet
120 MHz ARM® Cortex®-M4-based Microcontroller with FPU
The K22 product family members are optimized for cost-sensitive
applications requiring low-power, USB connectivity, processing
efficiency with floating point unit. It shares the comprehensive
enablement and scalability of the Kinetis family. This product
offers:
Up to 1 MB of flash memory with up to 128 KB of SRAM
Small package with high memory density
Run power consumption down to 279 μA/MHz. Static
power consumption down to 5.1 μA with full state retention
and 5 μs wakeup. Lowest Static mode down to 268 nA
USB LS/FS OTG 2.0 with embedded 3.3 V, 120 mA LDO
voltage regulator
Performance
Up to 120 MHz ARM Cortex-M4-based core with DSP
instructions delivering 1.25 Dhrystone MIPS per MHz
Memories and memory interfaces
Up to 1 MB program flash memory and 128 KB RAM
4 KB FlexRAM and 128 KB FlexNVM on FlexMemory
devices
FlexBus external bus interface
System peripherals
Multiple low-power modes; low leakage wakeup unit
Memory protection unit with multi-master protection
16-channel DMA controller
External watchdog monitor and software watchdog
Security and integrity modules
Hardware CRC module
128-bit unique identification (ID) number per chip
Analog modules
Two 16-bit SAR ADCs
One 12-bit DAC
Three analog comparators (CMP)
Voltage reference
Communication interfaces
USB full-/low-speed On-the-Go controller
USB Device Charger detect
Controller Area Network (CAN) module
Three SPI modules
Three I2C modules
Six UART modules
Secure Digital host controller (SDHC)
I2S module
Timers
Two 8-channel Flex-Timers (PWM/Motor Control)
Two 2-channel Flex-Timers (PWM/Quad Decoder)
Periodic interrupt timers and 16-bit low-power timer
Carrier modulator transmitter
Real-time clock
Programmable delay block
Clocks
3 to 32 MHz and 32 kHz crystal oscillator
PLL, FLL, and multiple internal oscillators
Operating Characteristics
Voltage range: 1.71 to 3.6 V
Flash write voltage range: 1.71 to 3.6 V
Temperature range (ambient): –40 to 105°C
MK22FX512AVLK12
MK22FN1M0AVLK12
80 LQFP
12 x 12 x 1.6 mm Pitch 0.5 mm
Freescale Semiconductor, Inc. K22P80M120SF5V2
Data Sheet: Technical Data Rev 5, 03/2015
Freescale reserves the right to change the detail specifications as may be required to
permit improvements in the design of its products. © 2013–2014 Freescale
Semiconductor, Inc. All rights reserved.
Ordering Information 1
Part Number Memory Maximum number of I\O's
Flash (KB) SRAM (KB)
MK22FX512AVLK12 512 KB 128 52
MK22FN1M0AVLK12 1 MB 128 52
1. To confirm current availability of ordererable part numbers, go to http://www.freescale.com and perform a part number
search.
Related Resources
Type Description Resource
Selector
Guide
The Freescale Solution Advisor is a web-based tool that features
interactive application wizards and a dynamic product selector.
Solution Advisor
Product Brief The Product Brief contains concise overview/summary information to
enable quick evaluation of a device for design suitability.
K20PB1
Reference
Manual
The Reference Manual contains a comprehensive description of the
structure and function (operation) of a device.
K22P80M50SF5V2RM1
Data Sheet The Data Sheet includes electrical characteristics and signal
connections.
K22P80M50SF5V21
Package
drawing
Package dimensions are provided in package drawings. LQFP 80-pin:
98ASS23174W1
1. To find the associated resource, go to http://www.freescale.com and perform a search using this term.
2Kinetis K22F Sub-Family Data Sheet, Rev5, 03/2015.
Freescale Semiconductor, Inc.
Memories and Memory Interfaces
Program
flash RAM
12-bit DAC
6-bit DAC
x3
CRC
Programmable
Analog Timers Communication InterfacesSecurity
and Integrity
SPI
x3
Carrier
modulator
transmitter
FlexMemory
Clocks
Frequency-
Core
Debug
interfaces DSP
Interrupt
controller
comparator
x3
Analog
Voltage
reference
Secure
Digital
Low power
timer
Human-Machine
Interface (HMI)
GPIO
System
protection
Memory
DMA
Internal
watchdogs
and external
Low-leakage
wakeup
locked loop
Serial
programming
interface
Phase-
locked loop
reference
Internal
clocks
delay block
timers
interrupt
Periodic
External
bus
real-time
Independent
clock
oscillators
Low/high
frequency
UART
x6
®
Cortex™-M4ARM
Available only in K21
LEGEND
Kinetis K21/22F Family
Tamper
detect
Random
Number
Generator
Hardware
Encryption
USB charger
detect
USB voltage
regulator
USB OTG
LS/FS/HS
USB LS/FS
transceiver
x1
IS
2
Floating-
point unit
x2
IC
2
Timers
x4 (20ch)
CAN
x1
16-bit ADC
x2
Figure 1. K20 block diagram
Kinetis K22F Sub-Family Data Sheet, Rev5, 03/2015. 3
Freescale Semiconductor, Inc.
Table of Contents
1 Ratings....................................................................................5
1.1 Thermal handling ratings................................................. 5
1.2 Moisture handling ratings................................................ 5
1.3 ESD handling ratings.......................................................5
1.4 Voltage and current operating ratings............................. 5
2 General................................................................................... 6
2.1 AC electrical characteristics.............................................6
2.2 Nonswitching electrical specifications..............................7
2.2.1 Voltage and current operating requirements.....7
2.2.2 LVD and POR operating requirements............. 8
2.2.3 Voltage and current operating behaviors.......... 8
2.2.4 Power mode transition operating behaviors......10
2.2.5 Power consumption operating behaviors.......... 10
2.2.6 EMC radiated emissions operating behaviors...14
2.2.7 Designing with radiated emissions in mind....... 15
2.2.8 Capacitance attributes...................................... 15
2.3 Switching specifications...................................................15
2.3.1 Device clock specifications............................... 15
2.3.2 General switching specifications....................... 16
2.4 Thermal specifications.....................................................17
2.4.1 Thermal operating requirements....................... 17
2.4.2 Thermal attributes............................................. 17
3 Peripheral operating requirements and behaviors.................. 19
3.1 Core modules.................................................................. 19
3.1.1 Debug trace timing specifications..................... 19
3.1.2 JTAG electricals................................................ 19
3.2 System modules.............................................................. 22
3.3 Clock modules................................................................. 22
3.3.1 MCG specifications........................................... 22
3.3.2 Oscillator electrical specifications..................... 25
3.3.3 32 kHz oscillator electrical characteristics.........27
3.4 Memories and memory interfaces................................... 27
3.4.1 Flash (FTFE) electrical specifications............... 27
3.4.2 EzPort switching specifications......................... 32
3.4.3 Flexbus switching specifications....................... 33
3.5 Security and integrity modules........................................ 36
3.6 Analog............................................................................. 36
3.6.1 ADC electrical specifications.............................37
3.6.2 CMP and 6-bit DAC electrical specifications.....41
3.6.3 12-bit DAC electrical characteristics................. 43
3.6.4 Voltage reference electrical specifications........ 46
3.7 Timers..............................................................................47
3.8 Communication interfaces............................................... 47
3.8.1 USB electrical specifications............................. 47
3.8.2 USB DCD electrical specifications.................... 48
3.8.3 USB VREG electrical specifications..................48
3.8.4 CAN switching specifications............................ 49
3.8.5 DSPI switching specifications (limited voltage
range)................................................................49
3.8.6 DSPI switching specifications (full voltage
range)................................................................51
3.8.7 I2C switching specifications.............................. 52
3.8.8 UART switching specifications.......................... 53
3.8.9 SDHC specifications......................................... 53
3.8.10 I2S switching specifications.............................. 54
4 Dimensions............................................................................. 66
4.1 Obtaining package dimensions....................................... 66
5 Pinout......................................................................................67
5.1 K22 Signal Multiplexing and Pin Assignments.................67
5.2 K22 Pinouts..................................................................... 71
6 Revision History...................................................................... 72
7 Copyright................................................................................. 0
8 Legal....................................................................................... 0
4Kinetis K22F Sub-Family Data Sheet, Rev5, 03/2015.
Freescale Semiconductor, Inc.
1 Ratings
1.1 Thermal handling ratings
Symbol Description Min. Max. Unit Notes
TSTG Storage temperature –55 150 °C 1
TSDR Solder temperature, lead-free 260 °C 2
1. Determined according to JEDEC Standard JESD22-A103, High Temperature Storage Life.
2. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
1.2 Moisture handling ratings
Symbol Description Min. Max. Unit Notes
MSL Moisture sensitivity level 3 1
1. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
1.3 ESD handling ratings
Symbol Description Min. Max. Unit Notes
VHBM Electrostatic discharge voltage, human body model -2000 +2000 V 1
VCDM Electrostatic discharge voltage, charged-device
model
-500 +500 V 2
ILAT Latch-up current at ambient temperature of 105°C -100 +100 mA 3
1. Determined according to JEDEC Standard JESD22-A114, Electrostatic Discharge (ESD) Sensitivity Testing Human
Body Model (HBM).
2. Determined according to JEDEC Standard JESD22-C101, Field-Induced Charged-Device Model Test Method for
Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components.
3. Determined according to JEDEC Standard JESD78, IC Latch-Up Test.
1.4 Voltage and current operating ratings
Ratings
Kinetis K22F Sub-Family Data Sheet, Rev5, 03/2015. 5
Freescale Semiconductor, Inc.
Symbol Description Min. Max. Unit
VDD Digital supply voltage –0.3 3.8 V
IDD Digital supply current 185 mA
VDIO Digital input voltage (except RESET, EXTAL, and XTAL) –0.3 5.5 V
VAIO Analog1, RESET, EXTAL, and XTAL input voltage –0.3 VDD + 0.3 V
IDMaximum current single pin limit (applies to all digital pins) –25 25 mA
VDDA Analog supply voltage VDD – 0.3 VDD + 0.3 V
VUSB0_DP USB0_DP input voltage –0.3 3.63 V
VUSB0_DM USB0_DM input voltage –0.3 3.63 V
VBAT RTC battery supply voltage –0.3 3.8 V
1. Analog pins are defined as pins that do not have an associated general purpose I/O port function.
2 General
2.1 AC electrical characteristics
Unless otherwise specified, propagation delays are measured from the 50% to the 50%
point, and rise and fall times are measured at the 20% and 80% points, as shown in the
following figure.
80%
20%
50%
VIL
Input Signal
VIH
Fall Time
High
Low
Rise Time
Midpoint1
The midpoint is VIL + (VIH - VIL) / 2
Figure 2. Input signal measurement reference
All digital I/O switching characteristics assume:
1. output pins
have CL=30pF loads,
are configured for fast slew rate (PORTx_PCRn[SRE]=0), and
are configured for high drive strength (PORTx_PCRn[DSE]=1)
2. input pins
have their passive filter disabled (PORTx_PCRn[PFE]=0)
General
6Kinetis K22F Sub-Family Data Sheet, Rev5, 03/2015.
Freescale Semiconductor, Inc.
2.2 Nonswitching electrical specifications
2.2.1 Voltage and current operating requirements
Table 1. Voltage and current operating requirements
Symbol Description Min. Max. Unit Notes
VDD Supply voltage 1.71 3.6 V
VDDA Analog supply voltage 1.71 3.6 V
VDD – VDDA VDD-to-VDDA differential voltage –0.1 0.1 V
VSS – VSSA VSS-to-VSSA differential voltage –0.1 0.1 V
VBAT RTC battery supply voltage 1.71 3.6 V
VIH Input high voltage
2.7 V ≤ VDD ≤ 3.6 V
1.71 V ≤ VDD ≤ 2.7 V
0.7 × VDD
0.75 × VDD
V
V
VIL Input low voltage
2.7 V ≤ VDD ≤ 3.6 V
1.71 V ≤ VDD ≤ 2.7 V
0.35 × VDD
0.3 × VDD
V
V
VHYS Input hysteresis 0.06 × VDD V
IICDIO Digital pin negative DC injection current — single pin
VIN < VSS-0.3V -5 mA
1
IICAIO Analog2, EXTAL, and XTAL pin DC injection current
— single pin
VIN < VSS-0.3V (Negative current injection)
VIN > VDD+0.3V (Positive current injection)
-5
+5
mA
3
IICcont Contiguous pin DC injection current —regional limit,
includes sum of negative injection currents or sum of
positive injection currents of 16 contiguous pins
Negative current injection
Positive current injection
-25
+25
mA
VODPU Open drain pullup voltage level VDD VDD V4
VRAM VDD voltage required to retain RAM 1.2 V
VRFVBAT VBAT voltage required to retain the VBAT register file VPOR_VBAT V
1. All 5 V tolerant digital I/O pins are internally clamped to VSS through an ESD protection diode. There is no diode
connection to VDD. If VIN is less than VDIO_MIN, a current limiting resistor is required. If VIN greater than VDIO_MIN
(=VSS-0.3V) is observed, then there is no need to provide current limiting resistors at the pads. The negative DC
injection current limiting resistor is calculated as R=(VDIO_MIN-VIN)/|IICDIO|.
2. Analog pins are defined as pins that do not have an associated general purpose I/O port function. Additionally, EXTAL
and XTAL are analog pins.
General
Kinetis K22F Sub-Family Data Sheet, Rev5, 03/2015. 7
Freescale Semiconductor, Inc.
3. All analog pins are internally clamped to VSS and VDD through ESD protection diodes. If VIN is less than VAIO_MIN or
greater than VAIO_MAX, a current limiting resistor is required. The negative DC injection current limiting resistor is
calculated as R=(VAIO_MIN-VIN)/|IICAIO|. The positive injection current limiting resistor is calculated as R=(VIN-VAIO_MAX)/|
IICAIO|. Select the larger of these two calculated resistances if the pin is exposed to positive and negative injection
currents.
4. Open drain outputs must be pulled to VDD.
2.2.2 LVD and POR operating requirements
Table 2. VDD supply LVD and POR operating requirements
Symbol Description Min. Typ. Max. Unit Notes
VPOR Falling VDD POR detect voltage 0.8 1.1 1.5 V
VLVDH Falling low-voltage detect threshold — high
range (LVDV=01)
2.48 2.56 2.64 V
VLVW1H
VLVW2H
VLVW3H
VLVW4H
Low-voltage warning thresholds — high range
Level 1 falling (LVWV=00)
Level 2 falling (LVWV=01)
Level 3 falling (LVWV=10)
Level 4 falling (LVWV=11)
2.62
2.72
2.82
2.92
2.70
2.80
2.90
3.00
2.78
2.88
2.98
3.08
V
V
V
V
1
VHYSH Low-voltage inhibit reset/recover hysteresis —
high range
80 mV
VLVDL Falling low-voltage detect threshold — low
range (LVDV=00)
1.54 1.60 1.66 V
VLVW1L
VLVW2L
VLVW3L
VLVW4L
Low-voltage warning thresholds — low range
Level 1 falling (LVWV=00)
Level 2 falling (LVWV=01)
Level 3 falling (LVWV=10)
Level 4 falling (LVWV=11)
1.74
1.84
1.94
2.04
1.80
1.90
2.00
2.10
1.86
1.96
2.06
2.16
V
V
V
V
1
VHYSL Low-voltage inhibit reset/recover hysteresis —
low range
60 mV
VBG Bandgap voltage reference 0.97 1.00 1.03 V
tLPO Internal low power oscillator period — factory
trimmed
900 1000 1100 μs
1. Rising threshold is the sum of falling threshold and hysteresis voltage
Table 3. VBAT power operating requirements
Symbol Description Min. Typ. Max. Unit Notes
VPOR_VBAT Falling VBAT supply POR detect voltage 0.8 1.1 1.5 V
General
8Kinetis K22F Sub-Family Data Sheet, Rev5, 03/2015.
Freescale Semiconductor, Inc.
2.2.3 Voltage and current operating behaviors
Table 4. Voltage and current operating behaviors
Symbol Description Min. Typ Max. Unit Notes
VOH Output high voltage — high drive strength
2.7 V ≤ VDD ≤ 3.6 V, IOH = -8mA
1.71 V ≤ VDD ≤ 2.7 V, IOH = -3mA
VDD – 0.5
VDD – 0.5
V
V
Output high voltage — low drive strength
2.7 V ≤ VDD ≤ 3.6 V, IOH = -2mA
1.71 V ≤ VDD ≤ 2.7 V, IOH = -0.6mA
VDD – 0.5
VDD – 0.5
V
V
IOHT Output high current total for all ports 100 mA
VOL Output low voltage — high drive strength
2.7 V ≤ VDD ≤ 3.6 V, IOL = 9mA
1.71 V ≤ VDD ≤ 2.7 V, IOL = 3mA
0.5
0.5
V
V
1
Output low voltage — low drive strength
2.7 V ≤ VDD ≤ 3.6 V, IOL = 2mA
1.71 V ≤ VDD ≤ 2.7 V, IOL = 0.6mA
0.5
0.5
V
V
IOLT Output low current total for all ports 100 mA
IIND Input leakage current, digital pins
VSS ≤ VIN ≤ VIL
All digital pins
VIN = VDD
All digital pins except PTD7
PTD7
0.002
0.002
0.004
0.5
0.5
1
μA
μA
μA
2, 3
IIND Input leakage current, digital pins
VIL < VIN < VDD
VDD = 3.6 V
VDD = 3.0 V
VDD = 2.5 V
VDD = 1.7 V
18
12
8
3
26
19
13
6
μA
μA
μA
μA
2
IIND Input leakage current, digital pins
VDD < VIN < 5.5 V
1
50
μA
IOZ Hi-Z (off-state) leakage current (per pin) 0.25 μA
RPU Internal pullup resistors 20 35 50 4
RPD Internal pulldown resistors 20 35 50 5
1. Open drain outputs must be pulled to VDD.
2. Measured at VDD=3.6V
3. Internal pull-up/pull-down resistors disabled.
4. Measured at VDD supply voltage = VDD min and Vinput = VSS
General
Kinetis K22F Sub-Family Data Sheet, Rev5, 03/2015. 9
Freescale Semiconductor, Inc.
5. Measured at VDD supply voltage = VDD min and Vinput = VDD
2.2.4 Power mode transition operating behaviors
All specifications except tPOR, and VLLSxRUN recovery times in the following table
assume this clock configuration:
CPU and system clocks = 100 MHz
Bus clock = 50 MHz
FlexBus clock = 50 MHz
Flash clock = 25 MHz
Table 5. Power mode transition operating behaviors
Symbol Description Min. Max. Unit Notes
tPOR After a POR event, amount of time from the point VDD
reaches 1.71 V to execution of the first instruction
across the operating temperature range of the chip.
300 μs
VLLS0 RUN 183 μs
VLLS1 RUN 183 μs
VLLS2 RUN 105 μs
VLLS3 RUN 105 μs
LLS RUN 5.0 μs
VLPS RUN 4.4 μs
STOP RUN 4.4 μs
2.2.5 Power consumption operating behaviors
Table 6. Power consumption operating behaviors
Symbol Description Min. Typ. Max. Unit Notes
IDDA Analog supply current See note mA 1
IDD_RUN Run mode current — all peripheral clocks
disabled, code executing from flash
33.57
33.51
36.2
36.1
mA
mA
2
Table continues on the next page...
General
10 Kinetis K22F Sub-Family Data Sheet, Rev5, 03/2015.
Freescale Semiconductor, Inc.
Table 6. Power consumption operating behaviors (continued)
Symbol Description Min. Typ. Max. Unit Notes
@ 1.8V
@ 3.0V
IDD_RUN Run mode current — all peripheral clocks
enabled, code executing from flash
@ 1.8V
@ 3.0V
@ 25°C
@ 125°C
46.36
46.31
57.4
50.1
49.9
mA
mA
mA
3, 4
IDD_WAIT Wait mode high frequency current at 3.0 V — all
peripheral clocks disabled
18.2 mA 2
IDD_WAIT Wait mode reduced frequency current at 3.0 V
— all peripheral clocks disabled
7.2 mA 5
IDD_VLPR Very-low-power run mode current at 3.0 V — all
peripheral clocks disabled
1.21 mA 6
IDD_VLPR Very-low-power run mode current at 3.0 V — all
peripheral clocks enabled
1.88 mA 7
IDD_VLPW Very-low-power wait mode current at 3.0 V — all
peripheral clocks disabled
0.80 mA 8
IDD_STOP Stop mode current at 3.0 V
@ –40 to 25°C
@ 70°C
@ 105°C
0.528
1.6
5.2
2.25
8
20
mA
mA
mA
IDD_VLPS Very-low-power stop mode current at 3.0 V
@ –40 to 25°C
@ 70°C
@ 105°C
78
498
1300
700
2400
3600
μA
μA
μA
IDD_LLS Low leakage stop mode current at 3.0 V
@ –40 to 25°C
@ 70°C
@ 105°C
5.1
28
124
15
80
300
μA
μA
μA
IDD_VLLS3 Very low-leakage stop mode 3 current at 3.0 V
@ –40 to 25°C
@ 70°C
@ 105°C
3.1
14.5
63.5
7.5
45
195
μA
μA
μA
IDD_VLLS2 Very low-leakage stop mode 2 current at 3.0 V
@ –40 to 25°C
2.0
6.9
5
32
μA
μA
Table continues on the next page...
General
Kinetis K22F Sub-Family Data Sheet, Rev5, 03/2015. 11
Freescale Semiconductor, Inc.
Table 6. Power consumption operating behaviors (continued)
Symbol Description Min. Typ. Max. Unit Notes
@ 70°C
@ 105°C
30 112 μA
IDD_VLLS1 Very low-leakage stop mode 1 current at 3.0 V
@ –40 to 25°C
@ 70°C
@ 105°C
1.25
6.5
37
2.1
18.5
108
μA
μA
μA
IDD_VLLS0 Very low-leakage stop mode 0 current at 3.0 V
with POR detect circuit enabled
@ –40 to 25°C
@ 70°C
@ 105°C
0.745
6.03
37
1.65
18
108
μA
μA
μA
IDD_VLLS0 Very low-leakage stop mode 0 current at 3.0 V
with POR detect circuit disabled
@ –40 to 25°C
@ 70°C
@ 105°C
0.268
3.7
22.9
1.25
15
95
μA
μA
μA
IDD_VBAT Average current with RTC and 32kHz disabled
at 3.0 V
@ –40 to 25°C
@ 70°C
@ 105°C
0.19
0.49
2.2
0.22
0.64
3.2
μA
μA
μA
IDD_VBAT Average current when CPU is not accessing
RTC registers
@ 1.8V
@ –40 to 25°C
@ 70°C
@ 105°C
@ 3.0V
@ –40 to 25°C
@ 70°C
@ 105°C
0.68
1.2
3.6
0.81
1.45
4.3
0.8
1.56
5.3
0.96
1.89
6.33
μA
μA
μA
μA
μA
μA
9
1. The analog supply current is the sum of the active or disabled current for each of the analog modules on the device. See
each module's specification for its supply current.
2. 120 MHz core and system clock, 60 MHz bus 40 Mhz and FlexBus clock, and 24 MHz flash clock. MCG configured for
PEE mode. All peripheral clocks disabled.
3. 120 MHz core and system clock, 60 MHz bus and FlexBus clock, and 24 MHz flash clock. MCG configured for PEE
mode. All peripheral clocks enabled.
4. Max values are measured with CPU executing DSP instructions.
General
12 Kinetis K22F Sub-Family Data Sheet, Rev5, 03/2015.
Freescale Semiconductor, Inc.
5. 25 MHz core and system clock, 25 MHz bus clock, and 12.5 MHz FlexBus and flash clock. MCG configured for FEI
mode.
6. 4 MHz core, system, FlexBus, and bus clock and 1 MHz flash clock. MCG configured for BLPE mode. All peripheral
clocks disabled. Code executing from flash.
7. 4 MHz core, system, FlexBus, and bus clock and 1 MHz flash clock. MCG configured for BLPE mode. All peripheral
clocks enabled but peripherals are not in active operation. Code executing from flash.
8. 4 MHz core, system, FlexBus, and bus clock and 1 MHz flash clock. MCG configured for BLPE mode. All peripheral
clocks disabled.
9. Includes 32kHz oscillator current and RTC operation.
2.2.5.1 Diagram: Typical IDD_RUN operating behavior
The following data was measured under these conditions:
MCG in PEE mode at greater than 100 MHz frequencies
No GPIOs toggled
Code execution from flash with cache enabled
For the ALLOFF curve, all peripheral clocks are disabled except FTFE
Figure 3. Run mode supply current vs. core frequency
General
Kinetis K22F Sub-Family Data Sheet, Rev5, 03/2015. 13
Freescale Semiconductor, Inc.
Figure 4. VLPR mode supply current vs. core frequency
2.2.6 EMC radiated emissions operating behaviors
Table 7. EMC radiated emissions operating behaviors
Symbol Description Frequency
band
(MHz)
Typ. Unit Notes
VRE1 Radiated emissions voltage, band 1 0.15–50 23 dBμV 1, 2
VRE2 Radiated emissions voltage, band 2 50–150 27 dBμV
VRE3 Radiated emissions voltage, band 3 150–500 28 dBμV
VRE4 Radiated emissions voltage, band 4 500–1000 14 dBμV
VRE_IEC IEC level 0.15–1000 K 2, 3
1. Determined according to IEC Standard 61967-1, Integrated Circuits - Measurement of Electromagnetic Emissions, 150
kHz to 1 GHz Part 1: General Conditions and Definitions and IEC Standard 61967-2, Integrated Circuits - Measurement
of Electromagnetic Emissions, 150 kHz to 1 GHz Part 2: Measurement of Radiated Emissions—TEM Cell and
Wideband TEM Cell Method. Measurements were made while the microcontroller was running basic application code.
General
14 Kinetis K22F Sub-Family Data Sheet, Rev5, 03/2015.
Freescale Semiconductor, Inc.
The reported emission level is the value of the maximum measured emission, rounded up to the next whole number,
from among the measured orientations in each frequency range.
2. VDD = 3.3 V, TA = 25 °C, fOSC = 12 MHz (crystal), fSYS = 96 MHz, fBUS = 48MHz
3. Specified according to Annex D of IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and
Wideband TEM Cell Method
2.2.7 Designing with radiated emissions in mind
To find application notes that provide guidance on designing your system to minimize
interference from radiated emissions:
1. Go to www.freescale.com.
2. Perform a keyword search for “EMC design.”
2.2.8 Capacitance attributes
Table 8. Capacitance attributes
Symbol Description Min. Max. Unit
CIN_A Input capacitance: analog pins 7 pF
CIN_D Input capacitance: digital pins 7 pF
2.3 Switching specifications
2.3.1 Device clock specifications
Table 9. Device clock specifications
Symbol Description Min. Max. Unit Notes
Normal run mode
fSYS System and core clock 120 MHz
fSYS_USB System and core clock when Full Speed USB in
operation
20 MHz
fBUS Bus clock 60 MHz
FB_CLK FlexBus clock 50 MHz
fFLASH Flash clock 25 MHz
fLPTMR LPTMR clock 25 MHz
VLPR mode1
fSYS System and core clock 4 MHz
fBUS Bus clock 4 MHz
Table continues on the next page...
General
Kinetis K22F Sub-Family Data Sheet, Rev5, 03/2015. 15
Freescale Semiconductor, Inc.
Table 9. Device clock specifications (continued)
Symbol Description Min. Max. Unit Notes
FB_CLK FlexBus clock 4 MHz
fFLASH Flash clock 0.8 MHz
fERCLK External reference clock 16 MHz
fLPTMR_pin LPTMR clock 25 MHz
fLPTMR_ERCLK LPTMR external reference clock 16 MHz
fFlexCAN_ERCLK FlexCAN external reference clock 8 MHz
fI2S_MCLK I2S master clock 12.5 MHz
fI2S_BCLK I2S bit clock 4 MHz
1. The frequency limitations in VLPR mode here override any frequency specification listed in the timing specification for
any other module.
2.3.2 General switching specifications
These general purpose specifications apply to all pins configured for:
GPIO signaling
Other peripheral module signaling not explicitly stated elsewhere
Table 10. General switching specifications
Symbol Description Min. Max. Unit Notes
GPIO pin interrupt pulse width (digital glitch filter
disabled) — Synchronous path
1.5 Bus clock
cycles
1, 2
GPIO pin interrupt pulse width (digital glitch filter
disabled, analog filter enabled) — Asynchronous path
100 ns 3
GPIO pin interrupt pulse width (digital glitch filter
disabled, analog filter disabled) — Asynchronous path
16 ns 3
External reset pulse width (digital glitch filter disabled) 100 ns 3
Mode select (EZP_CS) hold time after reset
deassertion
2 Bus clock
cycles
Port rise and fall time (high drive strength)
Slew disabled
1.71 ≤ VDD ≤ 2.7V
2.7 ≤ VDD ≤ 3.6V
Slew enabled
1.71 ≤ VDD ≤ 2.7V
2.7 ≤ VDD ≤ 3.6V
12
6
36
24
ns
ns
ns
ns
4
Port rise and fall time (low drive strength)
Slew disabled
5
General
16 Kinetis K22F Sub-Family Data Sheet, Rev5, 03/2015.
Freescale Semiconductor, Inc.
Table 10. General switching specifications
Symbol Description Min. Max. Unit Notes
1.71 ≤ VDD ≤ 2.7V
2.7 ≤ VDD ≤ 3.6V
Slew enabled
1.71 ≤ VDD ≤ 2.7V
2.7 ≤ VDD ≤ 3.6V
12
6
36
24
ns
ns
ns
ns
1. This is the minimum pulse width that is guaranteed to pass through the pin synchronization circuitry. Shorter pulses
may or may not be recognized. In Stop, VLPS, LLS, and VLLSx modes, the synchronizer is bypassed so shorter
pulses can be recognized in that case.
2. The greater synchronous and asynchronous timing must be met.
3. This is the minimum pulse width that is guaranteed to be recognized as a pin interrupt request in Stop, VLPS, LLS,
and VLLSx modes.
4. 75 pF load
5. 15 pF load
2.4 Thermal specifications
2.4.1 Thermal operating requirements
Table 11. Thermal operating requirements
Symbol Description Min. Max. Unit
TJDie junction temperature –40 125 °C
TAAmbient temperature –40 105 °C
2.4.2 Thermal attributes
Board type Symbol Description 80 LQFP Unit Notes
Single-layer
(1s)
RθJA Thermal
resistance,
junction to
ambient
(natural
convection)
50 59 °C/W 1
Four-layer
(2s2p)
RθJA Thermal
resistance,
junction to
ambient
35 41 °C/W 1
Table continues on the next page...
General
Kinetis K22F Sub-Family Data Sheet, Rev5, 03/2015. 17
Freescale Semiconductor, Inc.
Board type Symbol Description 80 LQFP Unit Notes
(natural
convection)
Single-layer
(1s)
RθJMA Thermal
resistance,
junction to
ambient (200
ft./min. air
speed)
39 48 °C/W 1
Four-layer
(2s2p)
RθJMA Thermal
resistance,
junction to
ambient (200
ft./min. air
speed)
29 35 °C/W 1
RθJB Thermal
resistance,
junction to
board
19 23 °C/W 2
RθJC Thermal
resistance,
junction to case
8 11 °C/W 3
ΨJT Thermal
characterizatio
n parameter,
junction to
package top
outside center
(natural
convection)
2 3 °C/W 4
Notes
1. Determined according to JEDEC Standard JESD51-2, Integrated Circuits Thermal
Test Method Environmental Conditions—Natural Convection (Still Air), or EIA/
JEDEC Standard JESD51-6, Integrated Circuit Thermal Test Method
Environmental Conditions—Forced Convection (Moving Air).
2. Determined according to JEDEC Standard JESD51-8, Integrated Circuit Thermal
Test Method Environmental Conditions—Junction-to-Board.
3. Determined according to Method 1012.1 of MIL-STD 883, Test Method Standard,
Microcircuits, with the cold plate temperature used for the case temperature. The
value includes the thermal resistance of the interface material between the top of
the package and the cold plate.
4. Determined according to JEDEC Standard JESD51-2, Integrated Circuits Thermal
Test Method Environmental Conditions—Natural Convection (Still Air).
General
18 Kinetis K22F Sub-Family Data Sheet, Rev5, 03/2015.
Freescale Semiconductor, Inc.
3 Peripheral operating requirements and behaviors
3.1 Core modules
3.1.1 Debug trace timing specifications
Table 12. Debug trace operating behaviors
Symbol Description Min. Max. Unit
Tcyc Clock period Frequency dependent
(limited to 50 MHz)
MHz
Twl Low pulse width 2 ns
Twh High pulse width 2 ns
TrClock and data rise time 3 ns
TfClock and data fall time 3 ns
TsData setup 3 ns
ThData hold 2 ns
TRACECLK
Tr
Twh
Tf
Tcyc
Twl
Figure 5. TRACE_CLKOUT specifications
Th
Ts Ts Th
TRACE_CLKOUT
TRACE_D[3:0]
Figure 6. Trace data specifications
Peripheral operating requirements and behaviors
Kinetis K22F Sub-Family Data Sheet, Rev5, 03/2015. 19
Freescale Semiconductor, Inc.
3.1.2 JTAG electricals
Table 13. JTAG limited voltage range electricals
Symbol Description Min. Max. Unit
Operating voltage 2.7 3.6 V
J1 TCLK frequency of operation
Boundary Scan
JTAG and CJTAG
Serial Wire Debug
0
0
0
10
25
50
MHz
J2 TCLK cycle period 1/J1 ns
J3 TCLK clock pulse width
Boundary Scan
JTAG and CJTAG
Serial Wire Debug
50
20
10
ns
ns
ns
J4 TCLK rise and fall times 3 ns
J5 Boundary scan input data setup time to TCLK rise 20 ns
J6 Boundary scan input data hold time after TCLK rise 2.6 ns
J7 TCLK low to boundary scan output data valid 25 ns
J8 TCLK low to boundary scan output high-Z 25 ns
J9 TMS, TDI input data setup time to TCLK rise 8 ns
J10 TMS, TDI input data hold time after TCLK rise 1 ns
J11 TCLK low to TDO data valid 17 ns
J12 TCLK low to TDO high-Z 17 ns
J13 TRST assert time 100 ns
J14 TRST setup time (negation) to TCLK high 8 ns
Table 14. JTAG full voltage range electricals
Symbol Description Min. Max. Unit
Operating voltage 1.71 3.6 V
J1 TCLK frequency of operation
Boundary Scan
JTAG and CJTAG
Serial Wire Debug
0
0
0
10
20
40
MHz
J2 TCLK cycle period 1/J1 ns
J3 TCLK clock pulse width
Boundary Scan
JTAG and CJTAG
Serial Wire Debug
50
25
12.5
ns
ns
ns
Table continues on the next page...
Peripheral operating requirements and behaviors
20 Kinetis K22F Sub-Family Data Sheet, Rev5, 03/2015.
Freescale Semiconductor, Inc.
Table 14. JTAG full voltage range electricals (continued)
Symbol Description Min. Max. Unit
J4 TCLK rise and fall times 3 ns
J5 Boundary scan input data setup time to TCLK rise 20 ns
J6 Boundary scan input data hold time after TCLK rise 0 ns
J7 TCLK low to boundary scan output data valid 25 ns
J8 TCLK low to boundary scan output high-Z 25 ns
J9 TMS, TDI input data setup time to TCLK rise 8 ns
J10 TMS, TDI input data hold time after TCLK rise 1.4 ns
J11 TCLK low to TDO data valid 22.1 ns
J12 TCLK low to TDO high-Z 22.1 ns
J13 TRST assert time 100 ns
J14 TRST setup time (negation) to TCLK high 8 ns
J2
J3 J3
J4 J4
TCLK (input)
Figure 7. Test clock input timing
J7
J8
J7
J5 J6
Input data valid
Output data valid
Output data valid
TCLK
Data inputs
Data outputs
Data outputs
Data outputs
Figure 8. Boundary scan (JTAG) timing
Peripheral operating requirements and behaviors
Kinetis K22F Sub-Family Data Sheet, Rev5, 03/2015. 21
Freescale Semiconductor, Inc.