PROFET(R) ITS 640S2 Smart Sense High-Side Power Switch For Industrial Applications Features * Short circuit protection * Current limitation * Proportional load current sense * CMOS compatible input * Open drain diagnostic output * Fast demagnetization of inductive loads * Undervoltage and overvoltage shutdown with auto-restart and hysteresis * Overload protection * Thermal shutdown * Overvoltage protection including load dump (with external GND-resistor) * Reverse battery protection (with external GNDresistor) * Loss of ground and loss of Vbb protection * Electrostatic discharge (ESD) protection Product Summary Operating voltage On-state resistance Load current (ISO) Current limitation Operating temperature Vbb(on) 5.0 ... 34 V RON 30 m IL(ISO) 12.6 A IL(SCr) 24 A Ta -30 ... +85 C Package PG-TO220-7-11 PG-TO220-7-12 1 1 Standard (staggered) Straight Application * C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads in industrial applications * All types of resistive, inductive and capacitive loads * Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Block Diagram 4 + V bb Voltage Overvoltage Current Gate source protection limit protection V Logic 3 1 Voltage Charge pump sensor Level shifter Rectifier IN ST ESD Logic Limit for unclamped ind. loads Output Voltage detection OUT IL Current Sense Load R Temperature sensor 5 IS I IS R GND IS 6, 7 O GND PROFET Load GND 2 Signal GND Infineon Technologies AG Page 1 of 15 2006-Mar-28 PROFET(R) ITS 640S2 Pin Symbol 1 ST Function Diagnostic feedback: open drain, invers to input level 2 GND Logic ground 3 IN Input, activates the power switch in case of logical high signal 4 Vbb 5 IS Positive power supply voltage, the tab is shorted to this pin Sense current output, proportional to the load current, zero in the case of current limitation of load current 6&7 OUT (Load, L) Output, protected high-side power output to the load. Both output pins have to be connected in parallel for operation according this spec (e.g. kILIS). Design the wiring for the max. short circuit current Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection Tj Start=-40 ...+150C Symbol Vbb Vbb Load dump protection1) VLoadDump = VA + Vs, VA = 13.5V VLoad dump3) Load current (Short circuit current, see page 5) Junction temperature Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Inductive load switch-off energy dissipation, single pulse IL Tj Ta Tstg Ptot RI2)= 2 , RL= 1 , td= 200 ms, IN= low or high Vbb = 12V, Tj,start = 150C, TC = 150C const. IL = 12.6 A, ZL = 4,2 mH, 0 : EAS IL = 4 A, ZL = 330 mH, 0 : EAS Electrostatic discharge capability (ESD) IN: VESD (Human Body Model) ST, IS: out to all other pins shorted: Values 43 34 Unit V V 60 V self-limited +150 -30 ...+85 -40 ...+105 85 A C 0,41 3,5 1.0 4.0 8.0 J W kV acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5k; C=100pF Input voltage (DC) Current through input pin (DC) Current through status pin (DC) Current through current sense pin (DC) VIN IIN IST IIS see internal circuit diagrams page 7 1) 2) 3) -10 ... +16 2.0 5.0 14 V mA Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 resistor in the GND connection is recommended). RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator according to ISO 7637-1 and DIN 40839 Infineon Technologies AG Page 2 2006-Mar-28 PROFET(R) ITS 640S2 Thermal Characteristics Parameter and Conditions Thermal resistance Symbol chip - case: RthJC junction - ambient (free air): RthJA min --- Values typ max -- 1.47 -75 Unit K/W Electrical Characteristics Parameter and Conditions Symbol at Tj = 25 C, Vbb = 12 V unless otherwise specified Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 6&7) Tj=25 C: RON Tj=150 C: IL = 5 A Output voltage drop limitation at small load currents (pin 4 to 6&7), see page 13 IL = 0.5 A Tj =-40...+150C: Nominal load current, ISO Norm (pin 4 to 6&7) VON = 0.5 V, TC = 85 C Nominal load current, device on nicht definiert.) PCBFehler! Textmarke TA = 85 C, Tj 150 C VON 0.5 V, -- 27 54 30 60 m -- 50 -- mV IL(ISO) 11.4 12.6 -- A IL(NOM) 4.0 4.5 -- A -- -- 8 mA VON(NL) Output current (pin 6&7) while GND disconnected IL(GNDhigh) or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 9; not subject to production test, specified by design Turn-on time IN to 90% VOUT: Turn-off time IN to 10% VOUT: RL = 12 , Tj =-40...+150C ton toff 25 25 70 80 150 200 s Slew rate on dV /dton 0.1 -- 1 V/s Slew rate off -dV/dtoff 0.1 -- 1 V/s 10 to 30% VOUT, RL = 12 , Tj =-40...+150C 70 to 40% VOUT, RL = 12 , Tj =-40...+150C Infineon Technologies AG Page 3 2006-Mar-28 PROFET(R) ITS 640S2 Parameter and Conditions Symbol at Tj = 25 C, Vbb = 12 V unless otherwise specified Values min typ max Operating Parameters Operating voltage 4) Undervoltage shutdown Undervoltage restart Vbb(on) Tj =-40...+150C: Vbb(under) Tj =-40...+25C: Vbb(u rst) Tj =+150C: Undervoltage restart of charge pump see diagram page 12 Tj =-40...+25C: Vbb(ucp) Tj =25...150C: Undervoltage hysteresis Vbb(under) 5.0 3.2 -- --4.5 34 5.0 5.5 6.0 V V V ---- 4.7 -0.5 6.5 7.0 -- V Overvoltage shutdown Overvoltage restart Overvoltage hysteresis Overvoltage protection5) 34 33 -41 43 --1 -47 43 ---52 V V V V Tj=-40...+25C: Ibb(off) Tj= 150C: IL(off) Off state output current (included in Ibb(off)) ---- 4 12 -- 15 25 10 A Operating current (Pin 2)6), VIN=5 V -- 1.2 3 mA Tj =-40...+150C: Vbb(under) = Vbb(u rst) - Vbb(under) Ibb=40 mA Vbb(over) Tj =-40...+150C: Vbb(o rst) Tj =-40...+150C: Vbb(over) Tj =-40C: Vbb(AZ) Tj =+25...+150C Tj =-40...+150C: Standby current (pin 4) VIN=0 VIN=0, 4) 5) 6) Unit V A Tj =-40...+150C: IGND At supply voltage increase up to Vbb= 4.7 V typ without charge pump, VOUT Vbb - 2 V Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 resistor in the GND connection is recommended). See also VON(CL) in table of protection functions and circuit diagram page 8. Add IST, if IST > 0, add IIN, if VIN>5.5 V Infineon Technologies AG Page 4 2006-Mar-28 PROFET(R) ITS 640S2 Parameter and Conditions Symbol at Tj = 25 C, Vbb = 12 V unless otherwise specified Protection Functions7) Initial peak short circuit current limit (pin 4 to 6&7) IL(SCp) Tj =-40C: Tj =25C: Tj =+150C: Repetitive short circuit shutdown current limit IL(SCr) Values min typ max Unit 48 40 31 56 50 37 65 58 45 A -- 24 -- A 41 43 150 --- -47 -10 -- -52 --32 V C K V -VON(rev) -- 600 -- mV = -40C, IL = 5 A: kILIS Tj= -40C, IL= 0.5 A: Tj= 25...+150C, IL= 5 A: , Tj= 25...+150C, IL = 0.5 A: Current sense output voltage limitation Tj = -40 ...+150C IIS = 0, IL = 5 A: VIS(lim) Current sense leakage/offset current Tj = -40 ...+150C VIN=0, VIS = 0, IL = 0: IIS(LL) VIN=5 V, VIS = 0, IL = 0: IIS(LH) VIN=5 V, VIS = 0, VOUT = 0 (short circuit): IIS(SH)11 ) 4550 3300 4550 4000 5000 5000 5000 5000 6000 8000 5550 6500 5.4 6.1 6.9 V 0 0 0 ---- 1 15 10 A Tj = Tjt (see timing diagrams, page 11) Output clamp (inductive load switch off) Tj =-40C: Tj =+25..+150C: Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 4 to 2) 8) Reverse battery voltage drop (Vout > Vbb) IL = -5 A Tj=150 C: at VOUT = Vbb - VON(CL); IL= 40 mA, VON(CL) Tjt Tjt -Vbb Diagnostic Characteristics Current sense ratio9), static on-condition, VIS = 0...5 V, Vbb(on) = 6.510)...27V, Tj kILIS = IL / IIS 7) 8) 9) 10) 11) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 8). This range for the current sense ratio refers to all devices. The accuracy of the kILIS can be raised at least by a factor of two by matching the value of kILIS for every single device. In the case of current limitation the sense current IIS is zero and the diagnostic feedback potential VST is High. See figure 2b, page 10. Valid if Vbb(u rst) was exceeded before. not subject to production test, specified by design Infineon Technologies AG Page 5 2006-Mar-28 PROFET(R) ITS 640S2 Parameter and Conditions Symbol at Tj = 25 C, Vbb = 12 V unless otherwise specified Current sense settling time to IIS static10% after positive input slope12) , IL = 0 5 A, Values min typ max Unit tson(IS) -- -- 300 s Current sense settling time to 10% of IIS static after tsoff(IS) negative input slope13) , IL = 5 0A, -- 30 100 s -- 10 -- 2 3 4 s V 5 15 40 k 3,0 4,5 7,0 k -1.5 -- --0.5 3.5 --- V V V 1 -- 50 A 20 50 90 A td(ST OL3) -- 400 -- s tdon(ST) -- 13 -- s tdoff(ST) -- 1 -- s 5.4 ---- 6.1 ---- 6.9 0.4 0.7 2 V Tj= -40...+150C Tj= -40...+150C Current sense rise time (60% to 90%) after change tslc(IS) of load current13) , IL = 2.5 5A Open load detection voltage13) (off-condition) VOUT(OL) Tj=-40..150C: Internal output pull down RO (pin 6 to 2), VOUT=5 V, Tj=-40..150C Input and Status Feedback14) Input resistance RI see circuit page 7 Input turn-on threshold voltage Tj =-40..+150C: VIN(T+) Input turn-off threshold voltage Tj =-40..+150C: VIN(T-) Input threshold hysteresis VIN(T) Off state input current (pin 3), VIN = 0.4 V Tj =-40..+150C IIN(off) On state input current (pin 3), VIN = 5 V Tj =-40..+150C Delay time for status with open load after Input neg. slope (see diagram page 12) Status delay after positive input IIN(on) slope13) Status delay after negative input Tj=-40 ... +150C: slope13) Tj=-40 ... +150C: Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +1.6 mA: VST(high) ST low voltage Tj =-40...+25C, IST = +1.6 mA: VST(low) Tj = +150C, IST = +1.6 mA: Status leakage current, VST = 5 V, Tj=25 ... +150C: IST(high) A 12) not subject to production test, specified by design External pull up resistor required for open load detection in off state. 14) If a ground resistor R GND is used, add the voltage drop across this resistor. 13) Infineon Technologies AG Page 6 2006-Mar-28 PROFET(R) ITS 640S2 Truth Table Input Output Status Current Sense level level level L H L H L H L H L H L H L H L H L L H L H L L15) L L H H L18) H L L L L L H L H H H H H H L16) L H (L19)) L H L H L H IIS 0 nominal 0 0 0 0 0 0 0 <nominal 17) 0 0 0 0 0 0 0 Normal operation Currentlimitation Short circuit to GND Overtemperature Short circuit to Vbb Open load Undervoltage Overvoltage Negative output voltage clamp L = "Low" Level H = "High" Level X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 11...12) Terms V bb Input circuit (ESD protection) 4 I IN 3 I ST I IS V IN 1 16) 17) 18) 19) IN VON Vbb IN OUT 6 OUT IS VST 5 V IS GND ESD-ZD I GND I GND I 7 I GND V 2 I IL PROFET ST R 15) R Ibb OUT The use of ESD zener diodes as voltage clamp at DC conditions is not recommended. The voltage drop over the power transistor is Vbb-VOUT>typ.3V. Under this condition the sense current IIS is zero An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious. Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS. Power Transistor off, high impedance with external resistor between pin 4 and pin 6&7 Infineon Technologies AG Page 7 2006-Mar-28 PROFET(R) ITS 640S2 Status output Overvoltage protection of logic part +5V + 5V + V bb R ST(ON) R ST ST Z2 ST ESDZD GND V RI IN Logic IS RV ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 440 at 1.6 mA, The use of ESD zener V R IS Z1 GND diodes as voltage clamp at DC conditions is not recommended. R GND Signal GND Current sense output V IS VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI= 4 k typ, RGND= 150 , RST= 15 k, RIS= 1 k, RV= 15 k, IS Reverse battery protection I IS + 5V R ESD-ZD - Vbb IS GND R ST RI IN ESD-Zener diode: 6.1 V typ., max 14 mA; RIS = 1 k nominal VZ1 IS OUT Power Inverse Diode RV Inductive and overvoltage output clamp R IS + V bb V Logic ST GND Z VON OUT GND VON clamped to 47 V typ. RL RGND PROFET Power GND Signal GND The load RL is inverse on, temperature protection is not active RGND= 150 , RI= 4 k typ, RST 500 , RIS 200 , RV 500 , Open-load detection OFF-state diagnostic condition: VOUT > 3 V typ.; IN low V R bb EXT OFF Out ST Logic R V OUT O Signal GND Infineon Technologies AG Page 8 2006-Mar-28 PROFET(R) ITS 640S2 GND disconnect V bb Vbb disconnect with charged external inductive load 4 3 1 5 Ibb 4 IN Vbb ST PROFET OUT 3 1 OUT IS high 6 7 5 GND IN Vbb ST PROFET OUT OUT IS 2 V GND R L If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. GND disconnect with GND pull up Inductive Load switch-off energy dissipation 4 E bb IN Vbb ST PROFET OUT 1 5 OUT IS 6 7 3 2 V bb 1 = V GND 5 Vbb Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. 1 5 IN Vbb ST PROFET OUT PROFET OUT IS 6 7 EL GND 2 2 EL = 1/2*L*I L OUT OUT IS ST ELoad Vbb Energy stored in load inductance: 4 3 IN ER Vbb disconnect with energized inductive load high E AS 4 GND V V V IN ST IS L V bb Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. 3 D 7 GND 2 V V V IN ST IS 6 While demagnetizing load inductance, the energy dissipated in PROFET is 6 EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, 7 with an approximate solution for RL > 0 : GND 2 IL* L IL*RL ) EAS= 2*R *(Vbb + |VOUT(CL)|)* ln (1+ |V L OUT(CL)| V bb Normal load current can be handled by the PROFET itself. Infineon Technologies AG Page 9 2006-Mar-28 PROFET(R) ITS 640S2 Timing diagrams Figure 2a: Switching a lamp Figure 1a: Switching a resistive load, change of load current in on-condition: IN IN ST ST t don(ST) t doff(ST) V VOUT t on IL OUT t off t slc(IS) Load 1 IL t slc(IS) Load 2 I IS IIS tson(IS) t t t soff(IS) The sense signal is not valid during settling time after turn or change of load current. Figure 1b: Vbb turn on: Figure 2b: Switching a lamp with current limit: IN IN Vbb ST I VOUT L IL I IS IIS ST t t proper turn on under all conditions Infineon Technologies AG Page 10 2006-Mar-28 PROFET(R) ITS 640S2 Figure 2c: Switching an inductive load: Figure 4a: Overtemperature: Reset if Tj <Tjt IN IN ST ST VOUT IL IL I IS IIS TJ t t Figure 3a: Short circuit: shut down by overtempertature, reset by cooling Figure 5a: Open load: detection in ON-state, open load occurs in on-state IN IL IN IL(SCp) I ST L(SCr) VOUT I IS IL ST open normal t IIS Heating up may require several milliseconds, depending on external conditions IL(SCp) = 50 A typ. increases with decreasing temperature. Infineon Technologies AG normal Page 11 t 2006-Mar-28 PROFET(R) ITS 640S2 Figure 5b: Open load: detection in ON- and OFF-state (with REXT), turn on/off to open load Figure 6b: Undervoltage restart of charge pump VON(CL) V on IN td(ST OL3) OUT V V V bb(u rst) I L V open load V I IS off-state V on-state off-state ST bb(over) bb(o rst) bb(u cp) bb(under) V bb t charge pump starts at Vbb(ucp) =4.7 V typ. Figure 7a: Overvoltage: Figure 6a: Undervoltage: IN IN ST not defined ST Vbb V bb V bb(under) I V bb(over) V bb(o rst) Vbb(u cp) Vbb(u rst) IL L I IIS t Infineon Technologies AG VON(CL) Page 12 IS t 2006-Mar-28 PROFET(R) ITS 640S2 Figure 9a: Output voltage drop versus load current: Figure 8a: Current sense versus load current: 1.3 [mA] 1.2 VON [V] I IS 1.1 0.2 1 RON 0.9 0.8 0.7 0.6 0.1 0.5 0.4 0.3 VON(NL) 0.2 0.1 IL 0 0 1 2 3 4 IL 0.0 5 [A] 6 0 1 2 3 4 5 6 7 [A] 8 Figure 8b: Current sense ratio20: 15000 k ILIS 10000 5000 [A] I L 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 20 This range for the current sense ratio refers to all devices. The accuracy of the kILIS can be raised at least by a factor of two by matching the value of kILIS for every single device. Infineon Technologies AG Page 13 2006-Mar-28 PROFET(R) ITS 640S2 Package and Ordering Code All dimensions in mm Standard (=staggered): PG-TO220-7-11 Sales code ITS640S2 Ordering code SP000221217 10 0.2 Attention please! 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Straight: PG-TO220-7-12 Sales Code ITS640S2 S Ordering code SP000221225 10 0.2 4.4 110.5 13 0.5 0.05 9.25 0.2 2.8 0.2 1) 13.4 17 0.3 15.65 0.3 1) Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 1.27 0.1 0.5 0.1 7x 0.6 0.1 1.27 Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 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