Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369
2N2369A
TO-18
APPLICATIONS
2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With
Low Power & High Speed Switching Applications.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT
Collector -Emitter Voltage VCEO 15 V
Collector -Emitter Voltage VCES 40 V
Collector -Base Voltage VCBO 40 V
Emitter -Base Voltage VEBO 4.5 V
Collector Current Continuous IC 200 mA
Collector Current Peak(10us pulse) IC(peak) 500 mA
Power Dissipation@ Ta=25 degC PD 360 mW
Derate Above 25 deg C 2.06 mW/de
g
C
@Tc=25 deg C PD 1.2 W
@Tc=100 deg C PD 0.68 W
Derate Above100 deg C 6.85 mW/de
g
C
Operating And Storage Junction Tj, Tstg -65 to +200 deg C
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION 2N2369 2N2369A UNIT
Collector -Emitter Voltage VCEO*(sus
)
IC=10mA, IB=0 >15 >15 V
Collector -Emitter Voltage VCES IC=10uA, VBE=0 >40 >40 V
Collector -Base Voltage VCBO IC=10uA, IE=0 >40 >40 V
Emitter -Base Voltage VEBO IE=10uA, IC=0 >4.5 >4.5 V
Collector-Cut off Current ICBO VCB=20V, IE=0 <400 - nA
VCB=20V, IE=0, Ta=150 deg C <30 - uA
ICES VCE=20V, VBE=0 - <400 nA
Base Current IB VCE=20V, VBE=0 - <400 nA
Collector Emitter Saturation Voltage VCE(Sat)* IC=10mA,IB=1mA <0.25 <0.20 V
IC=30mA,IB=3mA - <0.25 V
IC=100mA,IB=10mA - <0.50 V
IC=10mA,IB=1mA,Ta= +125 deg C - <0.30 V
Base Emitter Saturation Voltage VBE(Sat) * IC=10mA,IB=1mA 0.7-0.85 0.7-0.85 V
IC=30mA,IB=3mA - <1.15 V
IC=100mA,IB=10mA - <1.60 V
IC=10mA,IB=1mA,Ta= +125 deg C - >0.59 V
IC=10mA,IB=1mA, Ta= -55 deg C - <1.02 V
DC Current hFE* IC=10mA, VCE=1V 40-120 40-120
IC=10mA,VCE=1V, Ta= -55 deg C >20 -
IC=10mA,VCE=0.35V, Ta= -55 de
g
C
- >20
IS/ISO 9 0 02
Lic# QSC/L- 000019.2
IS / IEC QC 700000
IS / IEC QC 750100
Continental Device India Limited Data Sheet Page 1 of 3
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com page : 1
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) 2N2369/2369A
DESCRIPTION SYMBOL TEST CONDITION 2N2369 2N2369A UNIT
DC Current hFE* IC=10mA,VCE=0.35V - 40-120
IC=30mA,VCE=0.4V - >30
IC=100mA,VCE=1V - >20
IC=100mA,VCE=2V >20 -
Small Signal Characteristics
Transition Frequency ft VCE=10V,IC=10mA, f=100MHz >500 >500 MHZ
Output Capacitance Cobo VCB=5V, IE=0, f=140kHz <4.0 <4.0 pF
Turn on Time ton IC=10mA, IB1=3mA, <12 <12 ns
IB= -1.5mA, VCC=3V
Turn off Time toff IC=10mA, IB1=3mA, - <15 ns
IB2= -1.5mA, VCC=3V
Storage Time ts IC=100mA, IB1=IB=10mA, VCC=10
V
<13 <13 ns
*Pulse Test : Pulse Width =300us, Duty Cycle=2%
TO-18 Metal Can Package
TO-18 1K/polybag 350 gm/1K pcs 3" x 7.5" x 7.5" 5.0K 17" x 15" x 13.5" 80.0K 34 kgs
PACKAGE
Net Weight/Qty
Details
STANDARD PACK INNER CARTON BOX
Qty
OUTER CARTON BOX
Qty Gr WtSize Size
Packing Detail
G
1
2
3
H
J
L
F
A
D
B
E
C
K
DIM MIN MAX
All diminsions in mm.
A 5.24 5.84
B 4.52 4.97
C 4.31 5.3 3
D 0.40 0.5 3
E—0.76
F—1.27
G—2.97
H 0.91 1.1 7
J 0.71 1.21
K12.70 —
L45 DEG
PIN CONFIGURATION
1. EM ITTER
2. BASE
3. COLLECTOR
1
2
3
Continental Device India Limited Data Sheet Page 2 of 3
http://www.bocasemi.com page : 2
