VS-30TPS12LHM3
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Thyristor High Voltage, Phase Control SCR, 30 A
FEATURES
• AEC-Q101 qualified
• Meets JESD 201 class 1A whisker test
• Flexible solution for reliable AC power
rectification
• Easy control peak current at charger power
up to reduce passive / electromechanical components
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• On-board and off-board EV / HEV battery chargers
• Renewable energy inverters
DESCRIPTION
The VS-30TPS12LHM3 high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications.
PRIMARY CHARACTERISTICS
IT(AV) 20 A
VDRM/VRRM 1200 V
VTM 1.3 V
IGT 45 mA
TJ-40 °C to 125 °C
Package TO-247AD 3L
Circuit configuration Single SCR
(G) 3
2
(A)
1 (K)
TO-247AD 3L
1
2
3
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV) Sinusoidal waveform 20 A
IRMS 30
VRRM/VDRM 1200 V
ITSM 300 A
VT20 A, TJ = 25 °C 1.3 V
dv/dt 500 V/μs
di/dt 150 A/μs
TJ-40 to +125 °C
VOLTAGE RATINGS
PART NUMBER
VRRM / VDRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM / IDRM
AT 125 °C
mA
VS-30TPS12LHM3 1200 1300 10
VS-30TPS12LHM3
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current IT(AV) TC = 95 °C, 180° conduction half sine wave 20
A
Maximum RMS on-state current IRMS 30
Maximum peak, one-cycle
non-repetitive surge current ITSM
10 ms sine pulse, rated VRRM applied 250
10 ms sine pulse, no voltage reapplied 300
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 310 A2s
10 ms sine pulse, no voltage reapplied 442
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A2s
Maximum on-state voltage drop VTM 20 A, TJ = 25 °C 1.3 V
On-state slope resistance rtTJ = 125 °C 12 m
Threshold voltage VT(TO) 1.0 V
Maximum reverse and direct leakage
current IRM/IDM
TJ = 25 °C VR = rated VRRM / VDRM
0.5
mA
TJ = 125 °C 10
Maximum holding current IHAnode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 °C 150
Maximum latching current ILAnode supply = 6 V, resistive load, TJ = 25 °C 200
Maximum rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, Rg-k = open 500 V/μs
Maximum rate of rise of turned-on current dI/dt 150 A/μs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM 8.0 W
Maximum average gate power PG(AV) 2.0
Maximum peak positive gate current +IGM 1.5 A
Maximum peak negative gate voltage -VGM 10 V
Maximum required DC gate current
to trigger IGT
Anode supply = 6 V, resistive load, TJ = - 10 °C 60
mAAnode supply = 6 V, resistive load, TJ = 25 °C 45
Anode supply = 6 V, resistive load, TJ = 125 °C 20
Maximum required DC gate voltage
to trigger VGT
Anode supply = 6 V, resistive load, TJ = - 10 °C 2.5
V
Anode supply = 6 V, resistive load, TJ = 25 °C 2.0
Anode supply = 6 V, resistive load, TJ = 125 °C 1.0
Maximum DC gate voltage not to trigger VGD TJ = 125 °C, VDRM = rated value 0.25
Maximum DC gate current not to trigger IGD 2.0 mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time tgt TJ = 25 °C 0.9
μsTypical reverse recovery time trr TJ = 125 °C 4
Typical turn-off time tq110
VS-30TPS12LHM3
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Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg -40 to 125 °C
Maximum thermal resistance,
junction to case RthJC
DC operation
0.8
°C/W
Maximum thermal resistance,
junction to ambient RthJA 40
Maximum thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.2
Approximate weight 6g
0.21 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-247AD 3L 30TPS12LH
90
100
110
120
130
0 5 10 15 20 25
30° 60°
90° 120°
180°
Maximum Allowable Case Temperature (°C)
Conduction Angle
Average On-state Current (A)
3 0 TPS. . Se r i e s
R (DC) = 0.8 °C/ W
thJC
80
90
100
110
120
130
0 5 10 15 20 25 30 35
DC
30° 60°
90°
120° 180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
3 0 TPS. . Se r i e s
R (DC) = 0.8 °C/ W
thJC
0
10
20
30
40
50
60
0 5 10 15 20 25 30
RM S Li m i t
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
30TPS.. Se ries
T = 125°C
J
0
20
40
60
80
0 1020304050
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
3 0 TPS. . Se r i e s
T = 125°C
J
VS-30TPS12LHM3
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Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
120
140
160
180
200
220
240
260
280
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Peak Half Sine Wave On-state Current (A)
Init ial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
3 0 TP S. . Se r i e s
120
140
160
180
200
220
240
260
280
300
0.01 0.1 1
Peak Ha lf Sine Wave On-st a te Current (A)
Pulse Train Duration (s)
Versus Pulse Train Duration. Control
Of Conduction May Not Be Ma intained.
Initial T = 125°C
No Voltage Reapplied
Ra t e d V Re a p p l i e d
RRM
J
30TPS.. Se rie s
Maximum Non Repetitive Surge Current
1
10
100
1000
01234567
T = 2 5 ° C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 125°C
J
30TPS.. Series
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
St e a d y St a t e V a l u e
(DC Operation)
Si n g l e Pu l se
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
30TPS.. Series
Transient Thermal Impedance Z (°C/W)
thJC
VS-30TPS12LHM3
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Revision: 22-Feb-18 5Document Number: 96126
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Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-30TPS12LHM3 25 500 Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions TO-247AD 3L www.vishay.com/doc?95626
Part marking information TO-247AD 3L www.vishay.com/doc?95007
0.1
1
10
100
0.001 0.01 0.1 1 10 100
(b)
(a)
(4) (3) (2) (1)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
TJ = 2 5 ° C
TJ = 1 25 ° C
Frequency Limited by PG(AV)
TJ = - 1 0 ° C
IGD
VGD
30TPS.. Series
tr = 1 µs, tp >= 6 µs
<= 30% rated di/dt: 10 V, 65 ohms
b)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
a)Recommended load line for
Re c t a n g ul a r g a t e p u l se
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
2- Current rating (30 = 30 A)
3- Circuit configuration:
4- P = TO-247 package
7- Package L = long lead
8- H = AEC-Q101 qualified
5
T = Thyristor
- Type of silicon:
6- Voltage code x 100 = VRRM
S = Standard recovery rectifier
9
12 = 1200 V
Device code
62 43 5 8 9
30 T P S 12 H M3
7
LVS-
-Environmental digit:
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
1
1-Vishay Semiconductors product
Outline Dimensions
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Revision: 06-Mar-2020 1Document Number: 95626
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TO-247AD 3L
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.50 2.49 0.059 0.098 E1 13.46 - 0.53 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 Ø K 0.254 0.010
b2 1.65 2.39 0.065 0.094 L 19.81 20.32 0.780 0.800
b3 1.65 2.34 0.065 0.092 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 Ø P 3.56 3.66 0.14 0.144
b5 2.59 3.38 0.102 0.133 Ø P1 - 6.98 - 0.275
c 0.38 0.89 0.015 0.035 Q 5.31 5.69 0.209 0.224
c1 0.38 0.84 0.015 0.033 R 4.52 5.49 0.178 0.216
D 19.71 20.70 0.776 0.815 3 S 5.51 BSC 0.217 BSC
D1 13.08 - 0.515 - 4
0.10 AC
M M
E
(2)
(3)
(4)
(4)
(2) R/2
B
2 x R
S
D
See view B
2 x e
b4
3 x b
2 x b2
L
C
(5) L1
123
Q
D
A
A2
A
A
A1
C
Ø K BD
M M
A
(6) Φ P (Datum B)
Φ P1
D1 (4)
4
E1
0.01 BD
M M
View A - A
Thermal pad
D2
DDE E
CC
View B
(b1, b3, b5) Base metal
c1
(b, b2, b4)
Section C - C, D - D, E - E
(c)
Plating
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