Ky SGS-THOMSON MICROELECTRONICS 2N 5204 ---> 2N 5207 FEATURES a HIGH SURGE CAPABILITY a HIGH ON-STATE CURRENT a HIGH STABILITY AND RELIABILITY DESCRIPTION The 2N 5204 ---> 2N 5207 Family of Silicon Control- led Rectifiers uses a high performance glass passi- vated technology. This general purpose Family of Silicon Controlled To 48 Rectifiers is designed for power supplies up to (Metal) 400Hz on resistive or inductive load. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) | RMS on-state current Te = 76 C 35 A (180 conduction angle) IT{AV) Average on-state current Te = 75 C 22.5 A (180 conduction angle, single phase circuit) ITSM Non repetitive surge peak on-state current tp = 8.3 ms 360 A ( Tj initial = 25C ) tp = 10ms 330 lt 12t value tp = 10 ms 545 A2s di/at Critical rate of rise of on-state current 100 Alus Gate supply : |G = 400 mA _ dig/dt = 1 A/us Tstg Storage and operating junction temperature range - 40 to+ 150 C Tj - 40 to+125 a @7 Tl Maximum lead temperature for soldering during 10 s at 4.5 mm 230 C from case Symbol Parameter 2N Unit 5204 5205 5206 5207 VDRM Repetitive peak off-state voltage 600 800 1000 1200 v VRRM Tj = 125C 1/4 July 1991 We 7929237 OO5948e Tue 1552N 5204 ---> 2N 5207 THERMAL RESISTANCES Symbol! Parameter Value Unit Rth (c-h) |Contact (case to heatsink) 0.4 C/W Rth (j-c} DC | Junction to case for DC 1.0 C/W GATE CHARACTERISTICS (maximum values) Pa (Av) = 1W PG = 60W (tp = 20 us) IFGM=10A (p= 20s) VFGM = t6V (tp=20us) VAGM= 5V. ELECTRICAL CHARACTERISTICS Symbol Test Conditions Value Unit IaT Vp=12V (DC) AL=330 Tj=25C | MAX 40 mA Vet | Vp=12V. (DC) Ri=33a Tjx25C | MAX 1.5 Vep | Vp=VpRM RL=3.3k2 Tj= 125C | MIN 0.25 Vv tgt Vo=VorM_ Iq = 200mA Tj=25C TYP 2 ps dig/dt = 1.5A/us IL IG= 1.2 lat Tj=25C TYP 200 mA IH IT=500mA gate open Tj=25C MAX 100 mA VT {TM= 70A tp= 380us Tj=-25C | MAX 2.3 Vv IDRM VpRM Rated Tj=25C MAX 0.02 mA RRM | VRRM Rated Tj= 125C 3.3 dV/dt Linear slope up to Vp=67%VpRM Tj= 125C | MIN 200 Vius gate open Tq Vp=67%VDRM ITM=70A Vp=30V Tj= 125C | TYP 100 ps ditw/dt=30 A/jus sd Vp/dt= 20V/us 2/4 156 me 7929237 0059483 1895Fig.1 : Maximum average power dissipation versus average on-state current. _ Qs 180 = 120 40 30 20 10 IT(av) (A) 20 25 30 35 Fig.3 Average on-state current versus case temperature. | yayy A) 40 35 30 25 20 15 10 5 Tease(C) 0 0 25 so 75 100 125 Fig.5 : Relative variation of gate tngger current versus junction temperature. Igt(Ty! latlT#25C 25 . Ant Ty] th[T}*25 C] Igt rm ry 05 t Tj (C) 0 Loi 414 =40-30-20-10 10 20 30 40 50 60 70 80 80 100110120130 Mme 7929423? 2N 5204 ---> 2N 5207 Fig.2 : Correlation between maximum average power dissipation and maximum allowabie temperatures (Tamb and Tease) for different thermal resistances heatsink + contact. P (Ww) Tease (C) 60 o c/w o5C/w 68 50 1 GW || og 16 C/w 40 85 30 95 -180 20 105 1 115 Tamb (C) 125 80 100 120 140 40 60 Fig.4 Thermal transient impedance junction to ambient versus pulse duration. Zth j- ( C/W) 10E+00 1.0E-01 t (s) 10E+Ot 1.0E-02 10E-04 10E-03 10E-02 10E-01 10E+00 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. lege (A) 350 T) intial = 25C 300 250 200 150 100 50 Number of cycles 0 1 10 100 1000 815 = 3/4 1572N 5204 ---> 2N 5207 Fig.7 : Non repetitive surge peak on-state current for a Fig.& : On-state characteristics (maximum values). sinusoidal pulse with width : t < 10 ms, and corresponding value of [2t. Item (A). Pt (A 8) Iau (A) 2000 1000 Tj initial = 26C Tj initial 25C 'Tsm 1 Tj max __ Tj max 10 Vto = 13V Rt =0.0135 9 VTMtv) 200 1 1 2 3 4 5 6 PACKAGE MECHANICAL DATA (in millimeters) TO 48 Metal @420,2 + i] A o 12,5 m | maxi x | Sf a : 5 r E + Lo Poedy | y ' N 9/16" over flats 6 sided | MS 174 - 28 UNF 16,4 mazi Cooling method : by conduction (method C) Marking : type number Weight : 13.5 g Polarity : Anode (or A2) ta case Stud torque : 3.5mAN min / 3.8 MAN max 4/4 158 @e 79292037 0059485 751