11/2008
AWT6275
HELPTM IMT/WCDMA 3.4V/27.5dBm
Linear Power Amplier Module
Data Sheet - Rev 2.2
FEATURES
• InGaP HBT Technology
• High Efciency:
43% @ POUT = +27.5 dBm
21% @ POUT = +16 dBm
15% @ POUT = +7 dBm
• Low Quiescent Current: 16 mA
• Low Leakage Current in Shutdown Mode:<1 mA
• VREF = +2.85 V (+2.75 V min over temp)
• Optimized for a 50 V System
• Low Prole Miniature Surface Mount Package
• RoHS Compliant Package, 250 oC MSL-3
• HSPA Capable
APPLICATIONS
• WCDMA/HSPA IMT-Band Wireless Handsets
and Data Devices
PRODUCT DESCRIPTION
The AWT6275 meets the increasing demands for
higher output power in UMTS handsets. The PA
module is optimized for VREF = +2.85 V, a require-
ment for compatibility with the Qualcomm® 6250
chipset. The device is manufactured on an ad-
vanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
ruggedness. Selectable bias modes that optimize
efciency for different output power levels, and a
shutdown mode with low leakage current, increase
handset talk and standby time. The self-contained
4 mm x 4 mm x 1 mm surface mount package
incorporates matching networks optimized for output
power, efciency, and linearity in a 50 V system.
Figure 1: Block Diagram
Bias Control
VCC
VREF
RFIN
RFOUT
GND
VMODE
1
7
5
8
10
6
GND at slug (pad)
3
9
4
2
GND
VCC
GND
GND
AWT6275
M20 Package
10 Pin 4 mm x 4 mm x 1 mm
Surface Mount Module
2Data Sheet - Rev 2.2
11/2008
AWT6275
Table 1: Pin Description
Figure 2: Pinout (X-ray Top View)
VCC
RFOUT
VREF
RFIN
VMODE
GND
1
GND
10
2
3
4
56
9
8
7
VCC
GND
GND
GND
GND
PIN NAME DESCRIPTION
1 V
CC
Supply Voltage
2RF
IN
RF Input
3GND Ground
4 V
MODE
Mode Control Voltage
5 V
REF
Reference Voltage
6GND Ground
7GND Ground
8RF
OUT
RF Output
9GND Ground
10 V
CC
Supply Voltage
Data Sheet - Rev 2.2
11/2008
AWT6275
3
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Table 3: Operating Ranges
PARAMETER MIN MAX UNIT
Supply Voltage (V
CC
) 0 +5 V
Mode Control Voltage (V
MODE
) 0 +3.5 V
Reference Voltage (V
REF
) 0 +3.5 V
RF Input Power (P
IN
)-+10 dBm
Storage Temperature (T
STG
)-40 +150 °C
The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the
conditions dened in the electrical specications.
Notes:
(1) For operation at VCC = +3.2 V, POUT is derated by 0.5 dB.
PARAMETER MIN TYP MAX UNIT COMMENTS
Operating Frequency (f) 1920 -1980 MHz
Supply Voltage (V
CC
)+3.2
-
+3.4
+1.5
+4.2
-VP
OUT
< +27.5 dBm
P
OUT
< 7 dBm
Reference Voltage (V
REF
)+2.75
0
+2.85
-
+2.95
+0.5 VPA "on"
PA "shut down"
Mode Control Voltage (V
MODE)
+2.3
0
+2.85
-
+3.1
+0.5 VLow Bias Mode
High Bias Mode
RF Output Power (P
OUT
)
R99 WCDMA, HPM
HSPA (MPR=0), HPM
R99 WCDMA, LPM
HSPA (MPR=0), LPM
27(1)
26(1)
15.5(1)
14.5(1)
27.5
26.5
16
15
27.5
26.5
16
15
dBm 3GPP TS 34.121-1, Rel 7
Table C.11.1.3
Case Temperature (T
C
)-20 -+90 °C
4Data Sheet - Rev 2.2
11/2008
AWT6275
Table 4: Electrical Specications
(TC = +25 °C, VCC = +3.4 V, VREF = +2.85 V, 50 Ω system)
PARAMETER MIN TYP MAX UNIT COMMENTS
Gain
24.5
13.5
12
26.5
15.5
14
29
17.5
16
dB
P
OUT
= +27.5 dBm, V
MODE
= 0 V
P
OUT
= +16 dBm, V
MODE
= +2.85 V
P
OUT
= +7 dBm, V
CC
= 1.5 V,
V
MODE
= +2.85 V
ACLR1 at 5 MHz offset
(1)
-
-
-
-41
-43
-40
-38
-38
-38
dBc
P
OUT
= +27.5 dBm, V
MODE
= 0 V
P
OUT
= +16 dBm, V
MODE
= +2.85 V
P
OUT
= +7 dBm, V
CC
= 1.5 V,
V
MODE
= +2.85 V
ACLR2 at 10 MHz offset
-
-
-
-58
-52
-57
-48
-48
-48
dBc
P
OUT
= +27.5 dBm, V
MODE
= 0 V
P
OUT
= +16 dBm, V
MODE
= +2.85 V
P
OUT
= +7 dBm, V
CC
= 1.5 V,
V
MODE
= +2.85 V
Power-Added Efficiency
(1)
39
18
12
43
21
15
-
-
-
%
P
OUT
= +27.5 dBm, V
MODE
= 0 V
P
OUT
= +16 dBm, V
MODE
= +2.85 V
P
OUT
= +7 dBm, V
CC
= 1.5 V,
V
MODE
= +2.85 V
Quiescent Current (Icq) -16 22 mA V
MODE
= +2.85 V, V
CC
= 3.4 V
Reference Current -3.6 7mA through V
REF
pin
Mode Control Current -0.3 1mA through V
MODE
pin, V
MODE
= +2.85 V
Leakage Current -<1 5µA V
CC
= +4.2 V, V
REF
= 0 V,
V
MODE
= 0 V
Noise in Receive Band --141 -138 dBm/Hz 2110 MHz to 2170 MHz
Harmonics
2fo
3fo, 4fo
-
-
-45
-50
-40
-45 dBc P
OUT
< +27.5 dBm
Input Impedance - - 2:1 VSWR
Spurious Output Level
(all spurious outputs) - - -70 dBc
P
OUT
< +27.5 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating
conditions
Load mismatch stress with no
permanent degradation or failure 10:1 - - VSWR Applies over full operating range
Notes:
(1) ACLR and Efciency measured at 1950 MHz.
Data Sheet - Rev 2.2
11/2008
AWT6275
5
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to the VREF and VMODE voltages.
Bias Modes
The power amplier may be placed in either a Low Bias
mode or a High Bias mode by applying the appropriate
logic level (see Operating Ranges table) to VMODE
Table 6: Bias Control
voltage. The Bias Control table lists the recommended
modes of operation for various applications.
Three operating modes are recommended to optimize
current consumption. High Bias/High Power operating
mode is for POUT levels > 16 dBm. At ~ 16 dBm - 7 dBm,
the PA should be “Mode Switched” to Low Bias Mode.
For POUT levels < ~7 dBm, the VCC can be switched to
1.5 V (Low Bias Mode is also used for POUT range).
Figure 3: Application Circuit
C3
0.01µF
C4
2.2µFceramic
GND
at slug
RF IN 2
1
6
7
10
8
5
4
3
VCC
VMODE
GNDRFIN
GND
VCC
GND
VREF GND
RFOUT
VCC2
C1
0.01µF
VCC1
VMODE
VREF
C2
0.01µF
RF OU
10K V
Optional
pull-down
9
APPLICATION
P
OUT
LEVELS
BIAS
MODE V
REF
V
MODE
V
CC
WCDMA - low power <+7 dBm Low +2.85 V +2.85 V > +1.5
WCDMA - med power 7 < P
OUT
< +16 dBm Low +2.85 V +2.85 V +3.4
WCDMA - high power >+16 dBm High +2.85 V 0 V +3.4
Shutdown -Shutdown 0 V 0 V -
6Data Sheet - Rev 2.2
11/2008
AWT6275
PACKAGE OUTLINE
Figure 4: Package Outline - 10 Pin 4 mm x 4 mm x 1 mm Surface Mount Module
Figure 5: Branding Specication
75R
75R
Data Sheet - Rev 2.2
11/2008
AWT6275
7
Figure 6: Tape & Reel Packaging
Table 6: Tape & Reel Dimensions
PACKAGE TYPE TAPE WIDTH POCKET PITCH REEL CAPACITY MAX REEL DIA
4 mm x 4 mm x 1 mm 12 mm 8 mm 2500 13"
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
IMPORTANT NOTICE
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
Data Sheet - Rev 2.2
11/2008
8
AWT6275
ORDERING INFORMATION
ORDER NUMBER TEMPERATURE
RANGE
PACKAGE
DESCRIPTION COMPONENT PACKAGING
AWT6275RM20P8 -20
o
C to +90
o
C
RoHS Compliant 10 Pin
4 mm x 4 mm x 1 mm
Surface Mount Module
Tape and Reel, 2500 pieces per Reel
AWT6275RM20P9 -20
o
C to +90
o
C
RoHS Compliant 10 Pin
4 mm x 4 mm x 1 mm
Surface Mount Module
Partial Tape and Reel