June 2009 i
© 2009 Actel Corporation See the Actel website for the latest version of the datasheet.
v5.8
ProASICPLUS® Flash Family FPGAs
Features and Benefits
High Capacity
Commercial and Industrial
75,000 to 1 Million System Gates
27 k to 198 kbits of Two-Port SRAM
66 to 712 User I/Os
Military
300, 000 to 1 million System Gates
72 k to 198 kbits of Two Port SRAM
158 to 712 User I/Os
Reprogrammable Flash Technology
0.22 µm 4 LM Flash-Based CMOS Process
Live At Power-Up (LAPU) Level 0 Support
Single-Chip Solution
No Configuration Device Required
Retains Programmed Design during Power-Down/Up Cycles
Mil/Aero Devices Operate over Full Military Temperature
Range
Performance
3.3 V, 32-Bit PCI, up to 50 MHz (33 MHz over military
temperature)
Two Integrated PLLs
External System Performance up to 150 MHz
Secure Programming
The Industry’s Most Effective Security Key (FlashLock®)
Low Power
Low Impedance Flash Switches
Segmented Hierarchical Routing Structure
Small, Efficient, Configurable (Combinatorial or Sequential)
Logic Cells
High Performance Routing Hierarchy
Ultra-Fast Local and Long-Line Network
High-Speed Very Long-Line Network
High-Performance, Low Skew, Splittable Global Network
100% Routability and Utilization
I/O
Schmitt-Trigger Option on Every Input
2.5 V/3.3 V Support with Individually-Selectable Voltage and
Slew Rate
Bidirectional Global I/Os
Compliance with PCI Specification Revision 2.2
Boundary-Scan Test IEEE Std. 1149.1 (JTAG) Compliant
Pin Compatible Packages across the ProASICPLUS Family
Unique Clock Conditioning Circuitry
PLL with Flexible Phase, Multiply/Divide and Delay
Capabilities
Internal and/or External Dynamic PLL Configuration
Two LVPECL Differential Pairs for Clock or Data Inputs
Standard FPGA and ASIC Design Flow
Flexibility with Choice of Industry-Standard Front-End Tools
Efficient Design through Front-End Timing and Gate Optimization
ISP Support
In-System Programming (ISP) via JTAG Port
SRAMs and FIFOs
SmartGen Netlist Generation Ensures Optimal Usage of
Embedded Memory Blocks
24 SRAM and FIFO Configurations with Synchronous and
Asynchronous Operation up to 150 MHz (typical)
®
Table 1 ProASICPLUS Product Profile
Device APA075 APA150 APA3001APA450 APA6001APA750 APA10001
Maximum System Gates 75,000 150,000 300,000 450,000 600,000 750,000 1,000,000
Tiles (Registers) 3,072 6,144 8,192 12,288 21,504 32,768 56,320
Embedded RAM Bits (k=1,024 bits) 27 k 36k 72 k 108 k 126 k 144 k 198 k
Embedded RAM Blocks (256x9) 12 16 32 48 56 64 88
LVPECL 222 2 2 2 2
PLL 222 2 2 2 2
Global Networks 4 4 4 4 4 4 4
Maximum Clocks 24 32 32 48 56 64 88
Maximum User I/Os 158 242 290 344 454 562 712
JTAG ISP Yes Yes Yes Yes Yes Yes Yes
PCI Yes Yes Yes Yes Yes Yes Yes
Package (by pin count)
TQFP 100, 144 100
PQFP 208 208 208 208 208 208 208
PBGA 456 456 456 456 456 456
FBGA 144 144, 256 144, 256 144, 256, 484 256, 484, 676 676, 896 896, 1152
CQFP2208, 352 208, 352 208, 352
CCGA/LGA2624 624
Notes:
1. Available as Commercial/Industrial and Military/MIL-STD-883B devices.
2. These packages are available only for Military/MIL-STD-883B devices.
v5.8
ProASICPLUS Flash Family FPGAs
ii v5.8
Ordering Information
APA1000 FG
_
Part Number
Speed Grade
Blank =Standard Speed
F
F
= 20% Slower than Standard
Package Type
PQ =Plastic Quad Flat Pack (0.5 mm pitch)
TQ =Thin Quad Flat Pack (0.5 mm pitch)
FG =Fine Pitch Ball Grid Array (1.0 mm pitch)
BG =Plastic Ball Grid Array (1.27 mm pitch)
CQ =Ceramic Quad Flat Pack (1.05 mm pitch)
CG =Ceramic Column Grid Array (1.27 mm pitch)
LG =Land Grid Array (1.27 mm pitch)
1152 I
Package Lead Count
Application (Ambient Temperature Range)
G
Lead-free packaging
Blank = Standard Packaging
G = RoHS Compliant Packaging
Blank = Commercial (0˚C to +70˚C)
I = Industrial (-40˚C to +85˚C)
PP = Pre-production
ES = Engineering Silicon (Room Temperature Only)
M = Military (-55˚C to 125˚C)
B = MIL-STD-883 Class B
150,000 Equivalent System GatesAPA150 =
75,000 Equivalent System GatesAPA075 =
APA300 300,000 Equivalent System Gates=
APA450 450,000 Equivalent System Gates=
APA600 600,000 Equivalent System Gates=
APA750 750,000 Equivalent System Gates=
APA1000 1,000,000 Equivalent System Gates=
ProASICPLUS Flash Family FPGAs
v5.8 iii
Device Resources
General Guideline
Maximum performance numbers in this datasheet are based on characterized data. Actel does not guarantee
performance beyond the limits specified within the datasheet.
User I/Os2
Commercial/Industrial Military/MIL-STD-883B
Device
TQFP
100-Pin
TQFP
144-Pin
PQFP
208-Pin
PBGA
456-Pin
FBGA
144-Pin
FBGA
256-Pin
FBGA
484-Pin
FBGA
676-Pin
FBGA
896-Pin
FBGA
1152-Pin
CQFP
208-Pin
CQFP
352-Pin
CCGA/
LGA
624-Pin
APA075 66 107 158 100
APA150 66 158 242 100 186 3
APA300 158 4290 4100 4186 3, 4 158 248
APA450 158 344 100 186 3344 3
APA600 158 4356 4186 3, 4 370 3454 158 248 440
APA750 158 356 454 562 5
APA1000 158 4356 4642 4, 5 712 5158 248 440
Notes:
1. Package Definitions: TQFP = Thin Quad Flat Pack, PQFP = Plastic Quad Flat Pack, PBGA = Plastic Ball Grid Array, FBGA = Fine Pitch Ball Grid
Array, CQFP = Ceramic Quad Flat Pack, CCGA = Ceramic Column Grid Array, LGA = Land Grid Array
2. Each pair of PECL I/Os is counted as one user I/O.
3. FG256 and FG484 are footprint-compatible packages.
4. Military Temperature Plastic Package Offering
5. FG896 and FG1152 are footprint-compatible packages.
ProASICPLUS Flash Family FPGAs
iv v5.8
Temperature Grade Offerings
Speed Grade and Temperature Matrix
Package APA075 APA150 APA300 APA450 APA600 APA750 APA1000
TQ100 C, I C, I
TQ144 C, I
PQ208 C, I C, I C, I, M C, I C, I, M C, I C, I, M
BG456 C, I C, I, M C, I C, I, M C, I C, I, M
FG144 C, I C, I C, I, M C, I
FG256 C, I C, I, M C, I C, I, M
FG484 C, I C, I, M
FG676 C, I, M C, I
FG896 C, I C, I, M
FG1152 C, I
CQ208 M, B M, B M, B
CQ352 M, B M, B M, B
CG624 M, B M, B
Note: C = Commercial
I = Industrial
M = Military
B = MIL-STD-883
–F Std.
C✓✓
I
M, B
Note: C = Commercial
I = Industrial
M = Military
B = MIL-STD-883
v5.8 v
Table of Contents
ProASICPLUS Flash Family FPGAs
General Description
ProASICPLUS Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-2
Timing Control and Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-13
Sample Implementations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-16
Adjustable Clock Delay . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-16
Clock Skew Minimization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-16
PLL Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-21
Design Environment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-28
ISP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-28
Related Documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-29
Package Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-30
Calculating Typical Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-31
Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-34
Tristate Buffer Delays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-45
Output Buffer Delays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-47
Input Buffer Delays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-49
Global Input Buffer Delays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-51
Predicted Global Routing Delay . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-53
Global Routing Skew . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-53
Module Delays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-54
Sample Macrocell Library Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-54
Embedded Memory Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-57
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-76
Recommended Design Practice for VPN/VPP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-77
Package Pin Assignments
100-Pin TQFP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-1
144-Pin TQFP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3
208-Pin PQFP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-5
208-Pin CQFP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-12
352-Pin CQFP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-16
456-Pin PBGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-22
144-Pin FBGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-37
256-Pin FBGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-40
484-Pin FBGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-45
676-Pin FBGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-51
896-Pin FBGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-59
1152-Pin FBGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-69
624-Pin CCGA/LGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-78
Datasheet Information
List of Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-1
Data Sheet Categories . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-8
Export Administration Regulations (EAR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-8
Actel Safety Critical, Life Support, and High-Reliability Applications Policy . . . . . 3-8
ProASICPLUS Flash Family FPGAs
v5.8 1-1
General Description
The ProASICPLUS family of devices, Actel’s second-
generation Flash FPGAs, offers enhanced performance
over Actel’s ProASIC family. It combines the advantages
of ASICs with the benefits of programmable devices
through nonvolatile Flash technology. This enables
engineers to create high-density systems using existing
ASIC or FPGA design flows and tools. In addition, the
ProASICPLUS family offers a unique clock conditioning
circuit based on two on-board phase-locked loops (PLLs).
The family offers up to one million system gates,
supported with up to 198 kbits of two-port SRAM and up
to 712 user I/Os, all providing 50 MHz PCI performance.
Advantages to the designer extend beyond
performance. Unlike SRAM-based FPGAs, four levels of
routing hierarchy simplify routing, while the use of Flash
technology allows all functionality to be live at power-
up. No external boot PROM is required to support device
programming. While on-board security mechanisms
prevent access to the program information,
reprogramming can be performed in-system to support
future design iterations and field upgrades. The device’s
architecture mitigates the complexity of ASIC migration
at higher user volume. This makes ProASICPLUS a cost-
effective solution for applications in the networking,
communications, computing, and avionics markets.
The ProASICPLUS family achieves its nonvolatility and
reprogrammability through an advanced Flash-based
0.22 μm LVCMOS process with four layers of metal.
Standard CMOS design techniques are used to
implement logic and control functions, including the
PLLs and LVPECL inputs. This results in predictable
performance compatible with gate arrays.
The ProASICPLUS architecture provides granularity
comparable to gate arrays. The device core consists of a
Sea-of-Tiles. Each tile can be configured as a flip-flop,
latch, or three-input/one-output logic function by
programming the appropriate Flash switches. The
combination of fine granularity, flexible routing
resources, and abundant Flash switches allow 100%
utilization and over 95% routability for highly congested
designs. Tiles and larger functions are interconnected
through a four-level routing hierarchy.
Embedded two-port SRAM blocks with built-in FIFO/RAM
control logic can have user-defined depths and widths.
Users can also select programming for synchronous or
asynchronous operation, as well as parity generations or
checking.
The unique clock conditioning circuitry in each device
includes two clock conditioning blocks. Each block
provides a PLL core, delay lines, phase shifts (0° and
180°), and clock multipliers/dividers, as well as the
circuitry needed to provide bidirectional access to the
PLL. The PLL block contains four programmable
frequency dividers which allow the incoming clock signal
to be divided by a wide range of factors from 1 to 64.
The clock conditioning circuit also delays or advances the
incoming reference clock up to 8 ns (in increments of
0.25 ns). The PLL can be configured internally or
externally during operation without redesigning or
reprogramming the part. In addition to the PLL, there
are two LVPECL differential input pairs to accommodate
high-speed clock and data inputs.
To support customer needs for more comprehensive,
lower-cost, board-level testing, Actel’s ProASICPLUS
devices are fully compatible with IEEE Standard 1149.1
for test access port and boundary-scan test architecture.
For more information concerning the Flash FPGA
implementation, please refer to the "Boundary Scan
(JTAG)" section on page 1-11.
ProASICPLUS devices are available in a variety of high-
performance plastic packages. Those packages and the
performance features discussed above are described in
more detail in the following sections.
ProASICPLUS Flash Family FPGAs
1-2 v5.8
ProASICPLUS Architecture
The proprietary ProASICPLUS architecture provides
granularity comparable to gate arrays.
The ProASICPLUS device core consists of a Sea-of-Tiles
(Figure 1-1). Each tile can be configured as a three-input
logic function (e.g., NAND gate, D-Flip-Flop, etc.) by
programming the appropriate Flash switch
interconnections (Figure 1-2 and Figure 1-3 on page 1-3).
Tiles and larger functions are connected with any of the
four levels of routing hierarchy. Flash switches are
distributed throughout the device to provide
nonvolatile, reconfigurable interconnect programming.
Flash switches are programmed to connect signal lines to
the appropriate logic cell inputs and outputs. Dedicated
high-performance lines are connected as needed for fast,
low-skew global signal distribution throughout the core.
Maximum core utilization is possible for virtually any
design.
ProASICPLUS devices also contain embedded, two-port
SRAM blocks with built-in FIFO/RAM control logic.
Programming options include synchronous or
asynchronous operation, two-port RAM configurations,
user defined depth and width, and parity generation or
checking. Please see the "Embedded Memory
Configurations" section on page 1-23 for more
information.
Figure 1-1 The ProASICPLUS Device Architecture
Figure 1-2 Flash Switch
256x9 Two-Port SRAM
or FIFO Block
Logic Tile
256x9 Two Port SRAM
or FIFO Block
RAM Block
RAM Block
I/Os
Sensing Switching
Switch In
Switch Out
W
ord
Floating Gate
ProASICPLUS Flash Family FPGAs
v5.8 1-3
Live at Power-Up
The Actel Flash-based ProASICPLUS devices support
Level 0 of the live at power-up (LAPU) classification
standard. This feature helps in system component
initialization, executing critical tasks before the
processor wakes up, setting up and configuring memory
blocks, clock generation, and bus activity management.
The LAPU feature of Flash-based ProASICPLUS devices
greatly simplifies total system design and reduces total
system cost, often eliminating the need for Complex
Programmable Logic Device (CPLD) and clock generation
PLLs that are used for this purpose in a system. In
addition, glitches and brownouts in system power will
not corrupt the ProASICPLUS device's Flash configuration,
and unlike SRAM-based FPGAs, the device will not have
to be reloaded when system power is restored. This
enables the reduction or complete removal of the
configuration PROM, expensive voltage monitor,
brownout detection, and clock generator devices from
the PCB design. Flash-based ProASICPLUS devices simplify
total system design, and reduce cost and design risk,
while increasing system reliability and improving system
initialization time.
Flash Switch
Unlike SRAM FPGAs, ProASICPLUS uses a live-on-power-up
ISP Flash switch as its programming element.
In the ProASICPLUS Flash switch, two transistors share the
floating gate, which stores the programming
information. One is the sensing transistor, which is only
used for writing and verification of the floating gate
voltage. The other is the switching transistor. It can be
used in the architecture to connect/separate routing nets
or to configure logic. It is also used to erase the floating
gate (Figure 1-2 on page 1-2).
Logic Tile
The logic tile cell (Figure 1-3) has three inputs (any or all
of which can be inverted) and one output (which can
connect to both ultra-fast local and efficient long-line
routing resources). Any three-input, one-output logic
function (except a three-input XOR) can be configured as
one tile. The tile can be configured as a latch with clear
or set or as a flip-flop with clear or set. Thus, the tiles can
flexibly map logic and sequential gates of a design.
Figure 1-3 Core Logic Tile
Local Routing
In 1
In 2 (CLK)
In 3 (Reset)
Efficient Long-Line Routing
ProASICPLUS Flash Family FPGAs
1-4 v5.8
Routing Resources
The routing structure of ProASICPLUS devices is designed
to provide high performance through a flexible four-
level hierarchy of routing resources: ultra-fast local
resources, efficient long-line resources, high-speed, very
long-line resources, and high performance global
networks.
The ultra-fast local resources are dedicated lines that
allow the output of each tile to connect directly to every
input of the eight surrounding tiles (Figure 1-4).
The efficient long-line resources provide routing for
longer distances and higher fanout connections. These
resources vary in length (spanning 1, 2, or 4 tiles), run
both vertically and horizontally, and cover the entire
ProASICPLUS device (Figure 1-5 on page 1-5). Each tile can
drive signals onto the efficient long-line resources, which
can in turn access every input of every tile. Active buffers
are inserted automatically by routing software to limit
the loading effects due to distance and fanout.
The high-speed, very long-line resources, which span the
entire device with minimal delay, are used to route very
long or very high fanout nets. (Figure 1-6 on page 1-6).
The high-performance global networks are low-skew,
high fanout nets that are accessible from external pins or
from internal logic (Figure 1-7 on page 1-7). These nets
are typically used to distribute clocks, resets, and other
high fanout nets requiring a minimum skew. The global
networks are implemented as clock trees, and signals can
be introduced at any junction. These can be employed
hierarchically with signals accessing every input on all
tiles.
Figure 1-4 Ultra-Fast Local Resources
L
LL
LL
L
Inputs
Output
Ultra-Fast
Local Lines
(connects a tile to the
adjacent tile, I/O buffer,
or memory block)
LLL
ProASICPLUS Flash Family FPGAs
v5.8 1-5
Figure 1-5 Efficient Long-Line Resources
LL LLLL
LLLLLL
LL LLLL
LL LLLL
LL LLLL
Logic Cell
Spans 1 Tile
Spans 2 Tiles
Spans 4 Tiles
Spans 1 Tile
Spans 2 Tiles
Spans 4 Tiles
Logic Tile
ProASICPLUS Flash Family FPGAs
1-6 v5.8
Clock Resources
The ProASICPLUS family offers powerful and flexible
control of circuit timing through the use of analog
circuitry. Each chip has two clock conditioning blocks
containing a phase-locked loop (PLL) core, delay lines,
phase shifter (0° and 180°), clock multiplier/dividers, and
all the circuitry needed for the selection and
interconnection of inputs to the global network (thus
providing bidirectional access to the PLL). This permits
the PLL block to drive inputs and/or outputs via the two
global lines on each side of the chip (four total lines).
This circuitry is discussed in more detail in the
"ProASICPLUS Clock Management System" section on
page 1-13.
Clock Trees
One of the main architectural benefits of ProASICPLUS is
the set of power- and delay-friendly global networks.
ProASICPLUS offers four global trees. Each of these trees
is based on a network of spines and ribs that reach all
the tiles in their regions (Figure 1-7 on page 1-7). This
flexible clock tree architecture allows users to map up to
88 different internal/external clocks in an APA1000
device. Details on the clock spines and various numbers
of the family are given in Table 1-1 on page 1-7.
The flexible use of the ProASICPLUS clock spine allows the
designer to cope with several design requirements. Users
implementing clock-resource intensive applications can
easily route external or gated internal clocks using global
routing spines. Users can also drastically reduce delay
penalties and save buffering resources by mapping
critical high fanout nets to spines. For design hints on
using these features, refer to Actel’s Efficient Use of
ProASIC Clock Trees application note.
Figure 1-6 High-Speed, Very Long-Line Resources
PAD RING
PAD RING
PAD RING
I/O RING
I/O RING
High Speed Very Long-Line Resouces
SRAM
SRAM
ProASICPLUS Flash Family FPGAs
v5.8 1-7
Note: This figure shows routing for only one global path.
Figure 1-7 High-Performance Global Network
Table 1-1 Clock Spines
APA075 APA150 APA300 APA450 APA600 APA750 APA1000
Global Clock Networks (Trees) 4 4 4 4 4 4 4
Clock Spines/Tree 6 8 8 12 14 16 22
Total Spines 24 32 32 48 56 64 88
Top or Bottom Spine Height (Tiles) 16 24 32 32 48 64 80
Tiles in Each Top or Bottom Spine 512 768 1,024 1,024 1,536 2,048 2,560
Total Tiles 3,072 6,144 8,192 12,288 21,504 32,768 56,320
Top Spine
Bottom Spine
Global
Pads Global
Pads
Global Networks
Global Spine
Global Ribs
High-Performance
Global Network
Scope of Spine
(Shaded area
plus local RAMs
and I/Os)
PAD RING
PAD RING
PAD RING
I/O RING
I/O RING
ProASICPLUS Flash Family FPGAs
1-8 v5.8
Array Coordinates
During many place-and-route operations in Actel’s
Designer software tool, it is possible to set constraints
that require array coordinates.
Table 1-2 is provided as a reference. The array coordinates
are measured from the lower left (0,0). They can be used in
region constraints for specific groups of core cells, I/Os, and
RAM blocks. Wild cards are also allowed.
I/O and cell coordinates are used for placement
constraints. Two coordinate systems are needed because
there is not a one-to-one correspondence between I/O
cells and core cells. In addition, the I/O coordinate system
changes depending on the die/package combination.
Core cell coordinates start at the lower left corner
(represented as (1,1)) or at (1,5) if memory blocks are
present at the bottom. Memory coordinates use the
same system and are indicated in Table 1-2. The memory
coordinates for an APA1000 are illustrated in Figure 1-8.
For more information on how to use constraints, see the
Designer User’s Guide or online help for ProASICPLUS
software tools.
Table 1-2 Array Coordinates
Device
Logic Tile Memory Rows
AllMin. Max. Bottom Top
xy x y y y Min. Max.
APA075 1 1 96 32 (33,33) or (33, 35) 0,0 97, 37
APA150 1 1 128 48 (49,49) or (49, 51) 0,0 129, 53
APA300 1 5 128 68 (1,1) or (1,3) (69,69) or (69, 71) 0,0 129, 73
APA450 1 5 192 68 (1,1) or (1,3) (69,69) or (69, 71) 0,0 193, 73
APA600 1 5 224 100 (1,1) or (1,3) (101,101) or (101, 103) 0,0 225, 105
APA750 1 5 256 132 (1,1) or (1,3) (133,133) or (133, 135) 0,0 257, 137
APA1000 1 5 352 164 (1,1) or (1,3) (165,165) or (165, 167) 0,0 353, 169
Figure 1-8 Core Cell Coordinates for the APA1000
(353,169)
(352,167)
(352,165)
(352,164)
(352,5)
(352,3)
(353,0)
(352,1)
(1,5)
(1,1)
(1,164)
(1,165)
(1,3)
(1,167)
(1,169)
(0,0)
Core
Memory
Blocks
Memory
Blocks
ProASICPLUS Flash Family FPGAs
v5.8 1-9
Input/Output Blocks
To meet complex system demands, the ProASICPLUS
family offers devices with a large number of user I/O
pins, up to 712 on the APA1000. Table 1-3 shows the
available supply voltage configurations (the PLL block
uses an independent 2.5 V supply on the AVDD and
AGND pins). All I/Os include ESD protection circuits. Each
I/O has been tested to 2000 V to the human body model
(per JESD22 (HBM)).
Six or seven standard I/O pads are grouped with a GND
pad and either a VDD (core power) or VDDP (I/O power)
pad. Two reference bias signals circle the chip. One
protects the cascaded output drivers, while the other
creates a virtual VDD supply for the I/O ring.
I/O pads are fully configurable to provide the maximum
flexibility and speed. Each pad can be configured as an
input, an output, a tristate driver, or a bidirectional
buffer (Figure 1-9 and Table 1-4).
Table 1-3 ProASICPLUS I/O Power Supply Voltages
VDDP
2.5 V 3.3 V
Input Compatibility 2.5V 3.3V
Output Drive 2.5V 3.3V
Figure 1-9 I/O Block Schematic Representation
3.3V/2.5V
Signal Control
Pull-up
Control
Pad
Y
EN
A
3.3 V/2.5 V Signal Control Drive
Strength and Slew-Rate Control
Table 1-4 I/O Features
Function Description
I/O pads configured as inputs Selectable 2.5 V or 3.3 V threshold levels
• Optional pull-up resistor
Optionally configurable as Schmitt trigger input. The Schmitt trigger input option can be
configured as an input only, not a bidirectional buffer. This input type may be slower than
a standard input under certain conditions and has a typical hysteresis of 0.35 V. I/O macros
with an “S” in the standard I/O library have added Schmitt capabilities.
3.3 V PCI Compliant (except Schmitt trigger inputs)
I/O pads configured as outputs Selectable 2.5 V or 3.3 V compliant output signals
2.5 V – JEDEC JESD 8-5
3.3 V – JEDEC JESD 8-A (LVTTL and LVCMOS)
3.3 V PCI compliant
Ability to drive LVTTL and LVCMOS levels
• Selectable drive strengths
• Selectable slew rates
• Tristate
I/O pads configured as bidirectional
buffers
Selectable 2.5 V or 3.3 V compliant output signals
2.5 V – JEDEC JESD 8-5
3.3 V – JEDEC JESD 8-A (LVTTL and LVCMOS)
3.3 V PCI compliant
• Optional pull-up resistor
• Selectable drive strengths
• Selectable slew rates
• Tristate
ProASICPLUS Flash Family FPGAs
1-10 v5.8
Power-Up Sequencing
While ProASICPLUS devices are live at power-up, the order
of VDD and VDDP power-up is important during system
start-up. VDD should be powered up simultaneously with
VDDP on ProASICPLUS devices. Failure to follow these
guidelines may result in undesirable pin behavior during
system start-up. For more information, refer to Actel’s
Power-Up Behavior of ProASICPLUS Devices application
note.
LVPECL Input Pads
In addition to standard I/O pads and power pads,
ProASICPLUS devices have a single LVPECL input pad on
both the east and west sides of the device, along with
AVDD and AGND pins to power the PLL block. The
LVPECL pad cell consists of an input buffer (containing a
low voltage differential amplifier) and a signal and its
complement, PPECL (I/P) (PECLN) and NPECL (PECLREF).
The LVPECL input pad cell differs from the standard I/O
cell in that it is operated from VDD only.
Since it is exclusively an input, it requires no output
signal, output enable signal, or output configuration
bits. As a special high-speed differential input, it also
does not require pull ups. Recommended termination for
LVPECL inputs is shown in Figure 1-10. The LVPECL pad
cell compares voltages on the PPECL (I/P) pad (as
illustrated in Figure 1-11) and the NPECL pad and sends
the results to the global MUX (Figure 1-14 on page 1-14).
This high-speed, low-skew output essentially controls the
clock conditioning circuit.
LVPECLs are designed to meet LVPECL JEDEC receiver
standard levels (Table 1-5).
Figure 1-10 Recommended Termination for LVPECL Inputs
Figure 1-11 LVPECL High and Low Threshold Values
Table 1-5 LVPECL Receiver Specifications
Symbol Parameter Min. Max Units
VIH Input High Voltage 1.49 2.72 V
VIL Input Low Voltage 0.86 2.125 V
VID Differential Input Voltage 0.3 VDD V
+
_
PPECL
NPECL
From LVPECL Driver Data
Z = 50 Ω
0
Z = 50 Ω
0
R = 100 Ω
2.72
2.125
1.49
0.86
Voltage
ProASICPLUS Flash Family FPGAs
v5.8 1-11
Boundary Scan (JTAG)
ProASICPLUS devices are compatible with IEEE Standard
1149.1, which defines a set of hardware architecture and
mechanisms for cost-effective, board-level testing. The
basic ProASICPLUS boundary-scan logic circuit is composed
of the TAP (test access port), TAP controller, test data
registers, and instruction register (Figure 1-12). This
circuit supports all mandatory IEEE 1149.1 instructions
(EXTEST, SAMPLE/PRELOAD and BYPASS) and the
optional IDCODE instruction (Table 1-6).
Each test section is accessed through the TAP, which has
five associated pins: TCK (test clock input), TDI and TDO
(test data input and output), TMS (test mode selector)
and TRST (test reset input). TMS, TDI and TRST are
equipped with pull-up resistors to ensure proper
operation when no input data is supplied to them. These
pins are dedicated for boundary-scan test usage. Actel
recommends that a nominal 20 kΩ pull-up resistor is
added to TDO and TCK pins.
The TAP controller is a four-bit state machine (16 states)
that operates as shown in Figure 1-13 on page 1-12. The
’1’s and ‘0’s represent the values that must be present at
TMS at a rising edge of TCK for the given state transition
to occur. IR and DR indicate that the instruction register
or the data register is operating in that state.
ProASICPLUS devices have to be programmed at least
once for complete boundary-scan functionality to be
available. Prior to being programmed, EXTEST is not
available. If boundary-scan functionality is required prior
to programming, refer to online technical support on the
Actel website and search for ProASICPLUS BSDL.
Figure 1-12 ProASICPLUS JTAG Boundary Scan Test Logic Circuit
Device
Logic
TDI
TCK
TMS
TRST
TDO
I/OI/OI/O I/OI/O
I/OI/OI/O I/OI/O
I/O
I/O
I/O
I/O
Bypass Register
Instruction
Register
TAP
Controller
Test Data
Registers
Table 1-6 Boundary-Scan Opcodes
Hex Opcode
EXTEST 00
SAMPLE/PRELOAD 01
IDCODE 0F
CLAMP 05
BYPASS FF
Table 1-6 Boundary-Scan Opcodes
Hex Opcode
ProASICPLUS Flash Family FPGAs
1-12 v5.8
The TAP controller receives two control inputs (TMS and
TCK) and generates control and clock signals for the rest
of the test logic architecture. On power-up, the TAP
controller enters the Test-Logic-Reset state. To guarantee
a reset of the controller from any of the possible states,
TMS must remain high for five TCK cycles. The TRST pin
may also be used to asynchronously place the TAP
controller in the Test-Logic-Reset state.
ProASICPLUS devices support three types of test data
registers: bypass, device identification, and boundary
scan. The bypass register is selected when no other
register needs to be accessed in a device. This speeds up
test data transfer to other devices in a test data path.
The 32-bit device identification register is a shift register
with four fields (lowest significant byte (LSB), ID number,
part number and version). The boundary-scan register
observes and controls the state of each I/O pin.
Each I/O cell has three boundary-scan register cells, each
with a serial-in, serial-out, parallel-in, and parallel-out
pin. The serial pins are used to serially connect all the
boundary-scan register cells in a device into a boundary-
scan register chain, which starts at the TDI pin and ends
at the TDO pin. The parallel ports are connected to the
internal core logic tile and the input, output, and control
ports of an I/O buffer to capture and load data into the
register to control or observe the logic state of each I/O.
Figure 1-13 TAP Controller State Diagram
Test-Logic
Reset
Run-Test/
Idle Select-DR-
Scan
Capture-DR
Shift-DR
Exit-DR
Pause-DR
Exit2-DR
Update-DR
Select-IR-
Scan
Capture-IR
Shift-IR
Exit-IR
Pause-IR
Exit2-IR
Update-IR
1
11
0
1
0
00
11
00
00
11
00
1
1
11
11
110
0
00
0
0
ProASICPLUS Flash Family FPGAs
v5.8 1-13
Timing Control and
Characteristics
ProASICPLUS Clock Management System
ProASICPLUS devices provide designers with very flexible
clock conditioning capabilities. Each member of the
ProASICPLUS family contains two phase-locked loop (PLL)
blocks which perform the following functions:
Clock Phase Adjustment via Programmable Delay
(250 ps steps from –7 ns to +8 ns)
Clock Skew Minimization
Clock Frequency Synthesis
Each PLL has the following key features:
Input Frequency Range (fIN) = 1.5 to 180 MHz
Feedback Frequency Range (fVCO) = 24 to 180 MHz
Output Frequency Range (fOUT) = 8 to 180 MHz
Output Phase Shift = 0 ° and 180 °
Output Duty Cycle = 50%
Low Output Jitter (max at 25°C)
–f
VCO <10 MHz. Jitter ±1% or better
10 MHz < fVCO < 60 MHz. Jitter ±2% or better
–f
VCO > 60 MHz. Jitter ±1% or better
Note: Jitter(ps) = Jitter(%)* period
For Example:
Low Power Consumption – 6.9 mW (max – analog
supply) + 7.0μW/MHz (max – digital supply)
Physical Implementation
Each side of the chip contains a clock conditioning circuit
based on a 180 MHz PLL block (Figure 1-14 on page 1-
14). Two global multiplexed lines extend along each side
of the chip to provide bidirectional access to the PLL on
that side (neither MUX can be connected to the opposite
side's PLL). Each global line has optional LVPECL input
pads (described below). The global lines may be driven
by either the LVPECL global input pad or the outputs
from the PLL block, or both. Each global line can be
driven by a different output from the PLL. Unused global
pins can be configured as regular I/Os or left
unconnected. They default to an input with pull-up. The
two signals available to drive the global networks are as
follows (Figure 1-15 on page 1-15, Table 1-7 on page 1-
15, and Table 1-8 on page 1-16):
Global A (secondary clock)
Output from Global MUX A
Conditioned version of PLL output (fOUT) – delayed
or advanced
Divided version of either of the above
Further delayed version of either of the above
(0.25 ns, 0.50 ns, or 4.00 ns delay)1
Global B
Output from Global MUX B
Delayed or advanced version of fOUT
Divided version of either of the above
Further delayed version of either of the above
(0.25 ns, 0.50 ns, or 4.00 ns delay)2
Functional Description
Each PLL block contains four programmable dividers as
shown in Figure 1-14 on page 1-14. These allow
frequency scaling of the input clock signal as follows:
The n divider divides the input clock by integer
factors from 1 to 32.
The m divider in the feedback path allows
multiplication of the input clock by integer factors
ranging from 1 to 64.
The two dividers together can implement any
combination of multiplication and division
resulting in a clock frequency between 24 and 180
MHz exiting the PLL core. This clock has a fixed
50% duty cycle.
The output frequency of the PLL core is given by
the formula EQ 1-1 (fREF is the reference clock
frequency):
fOUT = fREF * m/n
EQ 1-1
The third and fourth dividers (u and v) permit the
signals applied to the global network to each be
further divided by integer factors ranging from 1
to 4.
The implementations shown in EQ2 and EQ3 enable the
user to define a wide range of frequency multiplier and
divisors.
fGLB = m/(n*u)
EQ 1-2
fGLA = m/(n*v)
EQ 1-3
Jitter in picoseconds at 100 MHz = 0.01 * (1/100E6) = 100 ps
Maximum Acquisition
Time
= 80 µs for fVCO > 40 MHz
= 30 µs for fVCO < 40 MHz
1. This mode is available through the delay feature of the Global MUX driver.
ProASICPLUS Flash Family FPGAs
1-14 v5.8
enable the user to define a wide range of frequency
multipliers and divisors. The clock conditioning circuit can
advance or delay the clock up to 8 ns (in increments of
0.25 ns) relative to the positive edge of the incoming
reference clock. The system also allows for the selection of
output frequency clock phases of 0° and 180°.
Prior to the application of signals to the rib drivers, they
pass through programmable delay units, one per global
network. These units permit the delaying of global
signals relative to other signals to assist in the control of
input set-up times. Not all possible combinations of input
and output modes can be used. The degrees of freedom
available in the bidirectional global pad system and in
the clock conditioning circuit have been restricted. This
avoids unnecessary and unwieldy design kit and software
work.
Notes:
1. FBDLY is a programmable delay line from 0 to 4 ns in 250 ps increments.
2. DLYA and DLYB are programmable delay lines, each with selectable values 0 ps, 250 ps, 500 ps, and 4 ns.
3. OBDIV will also divide the phase-shift since it takes place after the PLL Core.
Figure 1-14 PLL Block – Top-Level View and Detailed PLL Block Diagram
AVDD AGND GND
+
-
VDD
External Feedback Signal
GLA
GLB
Dynamic
Configuration Bits
Flash
Configuration Bits
8
27
4
Clock Conditioning
Circuitry
(Top level view)
Global MUX A OUT
Global MUX B OUT
See Figure 1-15
on page 1-14
Input Pins to the PLL
GLB
GLA
÷u
÷v
PLL Core
180˚
0
1
6
7
5
4
2
Delay Line 0.0 ns, 0.25 ns,
0.50 ns and 4.00 ns
P+
P-
Clock from Core
(GLINT mode)
CLK
1
0
Deskew
Delay
2.95 ns
1
2
3
Delay Line
0.25 ns to
4.00 ns,
16 steps,
0.25 ns
increments
3
1
2
Delay Line 0.0 ns, 0.25 ns,
0.50 ns and 4.00 ns
Clock from Core
(GLINT mode)
CLKA
EXTFB XDLYSEL
Bypass Secondary
Bypass Primary
FIVDIV[4:0]
FBDIV[5:0]
FBSEL[1:0]
OAMUX[1:0]
DLYA[1:0]
DLYB[1:0]
OBDIV[1:0]
OBMUX[2:0]
OADIV[1:0]
FBDLY[3:0]
÷n
÷m
Clock Conditioning Circuitry Detailed Block Diagram
ProASICPLUS Flash Family FPGAs
v5.8 1-15
Note: When a signal from an I/O tile is connected to the core, it cannot be connected to the Global MUX at the same time.
Figure 1-15 Input Connectors to ProASICPLUS Clock Conditioning Circuitry
Table 1-7 Clock-Conditioning Circuitry MUX Settings
MUX Datapath Comments
FBSEL
1 Internal Feedback
2 Internal Feedback and Advance Clock Using FBDLY –0.25 to –4 ns in 0.25 ns increments
3 External Feedback (EXTFB)
XDLYSEL
0 Feedback Unchanged
1 Deskew feedback by advancing clock by system delay Fixed delay of -2.95 ns
OBMUX GLB
0 Primary bypass, no divider
1 Primary bypass, use divider
2 Delay Clock Using FBDLY +0.25 to +4 ns in 0.25 ns increments
4 Phase Shift Clock by 0°
5 Reserved
6 Phase Shift Clock by +180°
7 Reserved
OAMUX GLA
0 Secondary bypass, no divider
1 Secondary bypass, use divider
2 Delay Clock Using FBDLY +0.25 to +4 ns in 0.25 ns increments
3 Phase Shift Clock by 0°
Configuration Tile
Configuration Tile
PECL Pad Cell
GLMX
GL
Std. Pad Cell
Std. Pad Cell
Std. Pad Cell
GL
NPECL
PPECL
CORE
Package Pins Physical I/O
Buffers
Global MUX
External
Feedback
Global MUX B
OUT
Global MUX A
OUT
Legend
Physical Pin
DATA Signals to the Core
DATA Signals to the PLL Block
DATA Signals to the Global MUX
Control Signals to the Global MUX
ProASICPLUS Flash Family FPGAs
1-16 v5.8
Lock Signal
An active-high Lock signal (added via the SmartGen PLL
development tool) indicates that the PLL has locked to
the incoming clock signal. The PLL will acquire and
maintain lock even when there is jitter on the incoming
clock signal. The PLL will maintain lock with an input
jitter up to 5% of the input period, with a maximum of
5 ns. Users can employ the Lock signal as a soft reset of
the logic driven by GLB and/or GLA. Note if FIN is not
within specified frequencies, then both the FOUT and lock
signal are indeterminate.
PLL Configuration Options
The PLL can be configured during design (via Flash-
configuration bits set in the programming bitstream) or
dynamically during device operation, thus eliminating
the need to reprogram the device. The dynamic
configuration bits are loaded into a serial-in/parallel-out
shift register provided in the clock conditioning circuit.
The shift register can be accessed either from user logic
within the device or via the JTAG port. Another option is
internal dynamic configuration via user-designed
hardware. Refer to Actel's ProASICPLUS PLL Dynamic
Reconfiguration Using JTAG application note for more
information.
For information on the clock conditioning circuit, refer
to Actel’s Using ProASICPLUS Clock Conditioning Circuits
application note.
Sample Implementations
Frequency Synthesis
Figure 1-16 on page 1-17 illustrates an example where
the PLL is used to multiply a 33 MHz external clock up to
133 MHz. Figure 1-17 on page 1-17 uses two dividers to
synthesize a 50 MHz output clock from a 40 MHz input
reference clock. The input frequency of 40 MHz is
multiplied by five and divided by four, giving an output
clock (GLB) frequency of 50 MHz. When dividers are
used, a given ratio can be generated in multiple ways,
allowing the user to stay within the operating frequency
ranges of the PLL. For example, in this case the input
divider could have been two and the output divider also
two, giving us a division of the input frequency by four
to go with the feedback loop division (effective
multiplication) by five.
Adjustable Clock Delay
Figure 1-18 on page 1-18 illustrates the delay of the
input clock by employing one of the adjustable delay
lines. This is easily done in ProASICPLUS by bypassing the
PLL core entirely and using the output delay line. Notice
also that the output clock can be effectively advanced
relative to the input clock by using the delay line in the
feedback path. This is shown in Figure 1-19 on page 1-18.
Clock Skew Minimization
Figure 1-20 on page 1-19 indicates how feedback from
the clock network can be used to create minimal skew
between the distributed clock network and the input
clock. The input clock is fed to the reference clock input
of the PLL. The output clock (GLA) feeds a clock network.
The feedback input to the PLL uses a clock input delayed
by a routing network. The PLL then adjusts the phase of
the input clock to match the delayed clock, thus
providing nearly zero effective skew between the two
clocks. Refer to Actel's Using ProASICPLUS Clock
Conditioning Circuits application note for more
information.
Table 1-8 Clock-Conditioning Circuitry Delay-Line
Settings
Delay Line Delay Value (ns)
DLYB
00
1 +0.25
2 +0.50
3+4.0
DLYA
00
1 +0.25
2 +0.50
3+4.0
ProASICPLUS Flash Family FPGAs
v5.8 1-17
Figure 1-16 Using the PLL 33 MHz In, 133 MHz Out
Figure 1-17 Using the PLL 40 MHz In, 50 MHz Out
÷n
÷m
÷u
÷v
D
D
D
D
PLL Core
External Feedback
Global MUX B OUT
Global MUX A OUT
GLB
GLA
0
˚
180
˚
33 MHz
133 MHz
÷4
÷1
÷1
÷n
÷m
÷u
÷v
D
D
D
D
PLL Core
External Feedback
Global MUX B OUT
Global MUX A OUT
GLB
GL
A
0˚
180˚
40 MHz 50 MHz
÷5
÷4
÷1
ProASICPLUS Flash Family FPGAs
1-18 v5.8
Figure 1-18 Using the PLL to Delay the Input Clock
Figure 1-19 Using the PLL to Advance the Input Clock
÷n
÷m
÷u
÷v
D
D
D
D
PLL Core
External Feedback
Global MUX B OUT
Global MUX A OUT
GLB
GL
A
0
˚
180
˚
133 MHz
133 MHz
÷1
÷1
÷1
÷n
÷m
÷u
÷v
D
D
D
D
PLL Core
External Feedback
Global MUX B OUT
Global MUX A OUT
GLB
GL
A
0˚
180˚
133 MHz
133 MHz
÷1
÷1
÷1
ProASICPLUS Flash Family FPGAs
v5.8 1-19
Figure 1-20 Using the PLL for Clock Deskewing
÷u
÷v
÷n
÷m
D
D
D
D
PLL Core
External
Feedback
Global MUX B
OUT
Global MUX A
OUT
GL
B
GL
A
133 MHz
133 MHz
/1
/1
D
Q
QSET
CLR
Off chip On chip
Reference
clock
180˚
ProASICPLUS Flash Family FPGAs
1-20 v5.8
Logic Tile Timing Characteristics
Timing characteristics for ProASICPLUS devices fall into
three categories: family dependent, device dependent,
and design dependent. The input and output buffer
characteristics are common to all ProASICPLUS family
members. Internal routing delays are device dependent.
Design dependency means that actual delays are not
determined until after placement and routing of the
user’s design are complete. Delay values may then be
determined by using the Timer utility or by performing
simulation with post-layout delays.
Critical Nets and Typical Nets
Propagation delays are expressed only for typical nets,
which are used for initial design performance evaluation.
Critical net delays can then be applied to the most
timing-critical paths. Critical nets are determined by net
property assignment prior to place-and-route. Refer to
the Actel Designer User’s Guide or online help for details
on using constraints.
Timing Derating
Since ProASICPLUS devices are manufactured with a
CMOS process, device performance will vary with
temperature, voltage, and process. Minimum timing
parameters reflect maximum operating voltage,
minimum operating temperature, and optimal process
variations. Maximum timing parameters reflect minimum
operating voltage, maximum operating temperature,
and worst-case process variations (within process
specifications). The derating factors shown in Table 1-9
should be applied to all timing data contained within
this datasheet.
All timing numbers listed in this datasheet represent
sample timing characteristics of ProASICPLUS devices.
Actual timing delay values are design-specific and can be
derived from the Timer tool in Actel’s Designer software
after place-and-route.
Table 1-9 Temperature and Voltage Derating Factors
(Normalized to Worst-Case Commercial, TJ = 70°C, VDD = 2.3 V)
–55°C –40°C 0°C 25°C 70°C 85°C 110°C 125°C 135°C 150°C
2.3 V 0.840.860.910.941.001.021.051.131.181.27
2.5 V 0.810.820.870.900.950.981.011.091.131.21
2.7 V 0.770.790.830.860.910.930.961.041.081.16
Notes:
1. The user can set the junction temperature in Designer software to be any integer value in the range of –55°C to 175°C.
2. The user can set the core voltage in Designer software to be any value between 1.4 V and 1.6 V.
ProASICPLUS Flash Family FPGAs
v5.8 1-21
PLL Electrical Specifications
Parameter Value TJ –40°C Value TJ > –40°C Notes
Frequency Ranges
Reference Frequency fIN (min.) 2.0 MHz 1.5 MHz Clock conditioning circuitry (min.) lowest input
frequency
Reference Frequency fIN (max.) 180 MHz 180 MHz Clock conditioning circuitry (max.) highest input
frequency
OSC Frequency fVCO (min.) 60 24 MHz Lowest output frequency voltage controlled
oscillator
OSC Frequency fVCO (max.) 180 180 MHz Highest output frequency voltage controlled
oscillator
Clock Conditioning Circuitry fOUT (min.) fIN 40 = 18 MHz
fIN > 40 = 16 MHz
6 MHz Lowest output frequency clock conditioning
circuitry
Clock Conditioning Circuitry fOUT (max.) 180 180 MHz Highest output frequency clock conditioning
circuitry
Acquisition Time from Cold Start
Acquisition Time (max.) 80 μs 30 μsf
VCO 40 MHz
Acquisition Time (max.) 80 μs 80 μsf
VCO > 40 MHz
Long Term Jitter Peak-to-Peak Max.*
Temperature Frequency MHz
fVCO<
10
10<fV
CO<60
fVCO
>60
25°C (or higher) ±1% ±2% ±1% Jitter(ps) = Jitter(%)*period
For example:
Jitter in picoseconds at 100 MHz
= 0.01 * (1/100E6) = 100 ps
0°C ±1.5% ±2.5% ±1%
–40°C ±2.5% ±3.5% ±1%
–55°C ±2.5% ±3.5% ±1%
Power Consumption
Analog Supply Power (max.*) 6.9 mW per PLL
Digital Supply Current (max.) 7 μW/MHz
Duty Cycle 50% ±0.5%
Input Jitter Tolerance
5% input period (max.
5 ns)
Maximum jitter allowable on an input
clock to acquire and maintain lock.
Note: *High clock frequencies (>60 MHz) under typical setup conditions
ProASICPLUS Flash Family FPGAs
1-22 v5.8
PLL I/O Constraints
PLL locking is guaranteed only when the following constraints are followed:
Table 1-10 PLL I/O Constraints
TJ –40°C Value TJ > –40°C
I/O Type PLL locking is guaranteed only when using low drive strength and
low slew rate I/O. PLL locking may be inconsistent when using high
drive strength or high slew rate I/Os
No Constraints
SSO APA300 Hermetic packages 8 SSO With FIN 180 MHz and
outputs switching
simultaneously
Plastic packages 16 SSO
APA600 Hermetic packages 16 SSO
Plastic packages 32 SSO
APA1000 Hermetic packages 16 SSO
Plastic packages 32 SSO
APA300 Hermetic packages 12 SSO With FIN 50 MHz and half
outputs switching on positive
clock edge, half switching on
the negative clock edge no less
than 10nsec later
Plastic packages 20 SSO
APA600 Hermetic packages 32 SSO
Plastic packages 64 SSO
APA1000 Hermetic packages 32 SSO
Plastic packages 64 SSO
ProASICPLUS Flash Family FPGAs
v5.8 1-23
User Security
ProASICPLUS devices have FlashLock protection bits that,
once programmed, block the entire programmed
contents from being read externally. Please refer to
Table 1-11 for details on the number of bits in the key for
each device. If locked, the user can only reprogram the
device employing the user-defined security key. This
protects the device from being read back and duplicated.
Since programmed data is stored in nonvolatile memory
cells (actually very small capacitors) rather than in the
wiring, physical deconstruction cannot be used to
compromise data. This type of security breach is further
discouraged by the placement of the memory cells
beneath the four metal layers (whose removal cannot be
accomplished without disturbing the charge in the
capacitor). This is the highest security provided in the
industry. For more information, refer to Actel’s Design
Security in Nonvolatile Flash and Antifuse FPGAs white
paper.
Embedded Memory Floorplan
The embedded memory is located across the top and
bottom of the device in 256x9 blocks (Figure 1-1 on page
1-2). Depending on the device, up to 88 blocks are
available to support a variety of memory configurations.
Each block can be programmed as an independent
memory array or combined (using dedicated memory
routing resources) to form larger, more complex memory
configurations. A single memory configuration could
include blocks from both the top and bottom memory
locations.
Embedded Memory Configurations
The embedded memory in the ProASICPLUS family
provides great configuration flexibility (Table 1-12). Each
ProASICPLUS block is designed and optimized as a two-
port memory (one read, one write). This provides 198
kbits of two-port and/or single port memory in the
APA1000 device.
Each memory block can be configured as FIFO or SRAM,
with independent selection of synchronous or
asynchronous read and write ports (Table 1-13).
Additional characteristics include programmable flags as
well as parity checking and generation. Figure 1-21 on
page 1-25 and Figure 1-22 on page 1-26 show the block
diagrams of the basic SRAM and FIFO blocks. Table 1-14
on page 1-25 and Table 1-15 on page 1-26 describe
memory block SRAM and FIFO interface signals,
respectively. A single memory block is designed to
operate at up to 150 MHz (standard speed grade typical
conditions). Each block is comprised of 256 9-bit words
(one read port, one write port). The memory blocks may
be cascaded in width and/or depth to create the desired
memory organization. (Figure 1-23 on page 1-27). This
provides optimal bit widths of 9 (one block), 18, 36, and
72, and optimal depths of 256, 512, 768, and 1,024. Refer
to Actel’s SmartGen User’s Guide for more information.
Figure 1-24 on page 1-27 gives an example of optimal
memory usage. Ten blocks with 23,040 bits have been
used to generate three arrays of various widths and
depths. Figure 1-25 on page 1-27 shows how RAM blocks
can be used in parallel to create extra read ports. In this
example, using only 10 of the 88 available blocks of the
APA1000 yields an effective 6,912 bits of multiple port
RAM. The Actel SmartGen software facilitates building
wider and deeper memory configurations for optimal
memory usage.
Table 1-11 Flashlock Key Size by Device
Device Key Size
APA075 79 bits
APA150 79 bits
APA300 79 bits
APA450 119 bits
APA600 167 bits
APA750 191 bits
APA1000 263 bits
®
Table 1-12 ProASICPLUS Memory Configurations by Device
Device Bottom Top
Maximum Width Maximum Depth
DWDW
APA075 0 12 256 108 1,536 9
APA150 0 16 256 144 2,048 9
APA300 16 16 256 144 2,048 9
APA450 24 24 256 216 3,072 9
APA600 28 28 256 252 3,584 9
ProASICPLUS Flash Family FPGAs
1-24 v5.8
APA750 32 32 256 288 4,096 9
APA1000 44 44 256 396 5,632 9
Table 1-13 Basic Memory Configurations
Type Write Access Read Access Parity Library Cell Name
RAM Asynchronous Asynchronous Checked RAM256x9AA
RAM Asynchronous Asynchronous Generated RAM256x9AAP
RAM Asynchronous Synchronous Transparent Checked RAM256x9AST
RAM Asynchronous Synchronous Transparent Generated RAM256x9ASTP
RAM Asynchronous Synchronous Pipelined Checked RAM256x9ASR
RAM Asynchronous Synchronous Pipelined Generated RAM256x9ASRP
RAM Synchronous Asynchronous Checked RAM256x9SA
RAM Synchronous Asynchronous Generated RAM256xSAP
RAM Synchronous Synchronous Transparent Checked RAM256x9SST
RAM Synchronous Synchronous Transparent Generated RAM256x9SSTP
RAM Synchronous Synchronous Pipelined Checked RAM256x9SSR
RAM Synchronous Synchronous Pipelined Generated RAM256x9SSRP
FIFO Asynchronous Asynchronous Checked FIFO256x9AA
FIFO Asynchronous Asynchronous Generated FIFO256x9AAP
FIFO Asynchronous Synchronous Transparent Checked FIFO256x9AST
FIFO Asynchronous Synchronous Transparent Generated FIFO256x9ASTP
FIFO Asynchronous Synchronous Pipelined Checked FIFO256x9ASR
FIFO Asynchronous Synchronous Pipelined Generated FIFO256x9ASRP
FIFO Synchronous Asynchronous Checked FIFO256x9SA
FIFO Synchronous Asynchronous Generated FIFO256x9SAP
FIFO Synchronous Synchronous Transparent Checked FIFO256x9SST
FIFO Synchronous Synchronous Transparent Generated FIFO256x9SSTP
FIFO Synchronous Synchronous Pipelined Checked FIFO256x9SSR
FIFO Synchronous Synchronous Pipelined Generated FIFO256x9SSRP
Table 1-12 ProASICPLUS Memory Configurations by Device
Device Bottom Top
Maximum Width Maximum Depth
DWDW
ProASICPLUS Flash Family FPGAs
v5.8 1-25
Note: Each RAM block contains a multiplexer (called DMUX) for each output signal, increasing design efficiency. These DMUX cells do not
consume any core logic tiles and connect directly to high-speed routing resources between the RAM blocks. They are used when
RAM blocks are cascaded and are automatically inserted by the software tools.
Figure 1-21 Example SRAM Block Diagrams
Table 1-14 Memory Block SRAM Interface Signals
SRAM Signal Bits In/Out Description
WCLKS 1 In Write clock used on synchronization on write side
RCLKS 1 In Read clock used on synchronization on read side
RADDR<0:7> 8 In Read address
RBLKB 1 In Read block select (active Low)
RDB 1 In Read pulse (active Low)
WADDR<0:7> 8 In Write address
WBLKB 1 In Write block select (active Low)
DI<0:8> 9 In Input data bits <0:8>, <8> can be used for parity In
WRB 1 In Write pulse (active Low)
DO<0:8> 9 Out Output data bits <0:8>, <8> can be used for parity Out
RPE 1 Out Read parity error (active High)
WPE 1 Out Write parity error (active High)
PARODD 1 In Selects Odd parity generation/detect when High, Even parity when Low
Note: Not all signals shown are used in all modes.
SRAM
(256x9)
DI <0:8> DO <0:8>
RADDR <0:7>
WADDR <0:7>
WRB RDB
WBLKB RBLKB
WCLKS RCLKS
RPE
PARODD
DI <0:8>
WADDR <0:7>
WRB
WBLKB
PARODD
WPE
WPE
SRAM
(256x9)
DI <0:8> DO <0:8>
WADDR <0:7>
WRB RDB
WBLKB RBLKB
WCLKS
RPE
PARODD
WPE
RADDR <0:7>
PARODD
DI <0:8> DO <0:8>
RADDR <0:7>WADDR <0:7>
WRB RDB
WBLKB RBLKB
RCLKS
RPE
WPE
DO <0:8>
RADDR <0:7>
RDB
RBLKB
RCLKS
RPE
Sync Write
and
Sync Read
Ports
Async Write
and
Async Read
Ports
Sync Write
and
Async Read
Ports
Async Write
and
Sync Read
Ports
SRAM
(256x9)
SRAM
(256x9)
ProASICPLUS Flash Family FPGAs
1-26 v5.8
Note: Each RAM block contains a multiplexer (called DMUX) for each output signal, increasing design efficiency. These DMUX cells do not
consume any core logic tiles and connect directly to high-speed routing resources between the RAM blocks. They are used when
RAM blocks are cascaded and are automatically inserted by the software tools.
Figure 1-22 Basic FIFO Block Diagrams
Table 1-15 Memory Block FIFO Interface Signals
FIFO Signal Bits In/Out Description
WCLKS 1 In Write clock used for synchronization on write side
RCLKS 1 In Read clock used for synchronization on read side
LEVEL <0:7> 8 In Direct configuration implements static flag logic
RBLKB 1 In Read block select (active Low)
RDB 1 In Read pulse (active Low)
RESET 1 In Reset for FIFO pointers (active Low)
WBLKB 1 In Write block select (active Low)
DI<0:8> 9 In Input data bits <0:8>, <8> will be generated parity if PARGEN is true
WRB 1 In Write pulse (active Low)
FULL, EMPTY 2 Out FIFO flags. FULL prevents write and EMPTY prevents read
EQTH, GEQTH 2 Out EQTH is true when the FIFO holds the number of words specified by the LEVEL signal.
GEQTH is true when the FIFO holds (LEVEL) words or more
DO<0:8> 9 Out Output data bits <0:8>. <8> will be parity output if PARGEN is true.
RPE 1 Out Read parity error (active High)
WPE 1 Out Write parity error (active High)
LGDEP <0:2> 3 In Configures DEPTH of the FIFO to 2 (LGDEP+1)
PARODD 1 In Parity generation/detect – Even when Low, Odd when High
FIFO
(256x9)
LEVEL<0:7> DO <0:8>
DI<0:8>
WRB
RDB
WBLKB
RBLKB
RPE
PARODD
WPE
LGDEP<0:2>
FULL
EMPTY
EQTH
GEQTH
WCLKS
RCLKS
RESET
RESET
RPE
WPE
FULL
EMPTY
EQTH
GEQTH
DO <0:8>
RPE
WPE
FULL
EMPTY
EQTH
GEQTH
DI <0:8> DO <0:8>
LEVEL <0:7>
WRB
RDB
WBLKB
RBLKB
RPE
PARODD
WPE
LGDEP<0:2>
DI <0:8>
LEVEL <0:7>
WRB
RDB
WBLKB
RBLKB
PARODD
LGDEP<0:2>
FULL
EMPTY
EQTH
GEQTH
RCLKS
RESET
RESET
LEVEL<0:7>
DI<0:8>
WRB
RDB
WBLKB
RBLKB
PARODD
LGDEP<0:2>
WCLKS
DO <0:8>
FIFO
(256x9)
FIFO
(256x9)
FIFO
(256x9)
Sync Write
and
Sync Read
Ports
Sync Write
and
Async Read
Ports
Async Write
and
Sync Read
Ports
Async Write
and
Async Read
Ports
ProASICPLUS Flash Family FPGAs
v5.8 1-27
Figure 1-23 APA1000 Memory Block Architecture
Figure 1-24 Example Showing Memory Arrays with Different Widths and Depths
Figure 1-25 Multi-Port Memory Usage
Word
Depth
Word Width
88 blocks
256
9
256
9
256
9
256
9
256
9
256
9
256
9
256
9
256
9
Word
Depth
Word Width
1,024 words x 9 bits, 1 read, 1 write
512 words x 18 bits, 1 read, 1 write
256 words x 18 bits, 1 read, 1 write
Total Memory Blocks Used = 10
Total Memory Bits = 23,040
256
256
256
256
9
256
256
99
256
99
256
256
256
256
256
99 9
256
9
512 words x 9 bits, 4 read, 1 write
256 words x 9 bits, 2 read, 1 write
Total Memory Blocks Used = 10
Total Memory Bits = 6,912
Word
Depth
Word Width
Write Port Write Port
Read Ports
99
Read Ports
999 9
256
256
256
256
256
256
256
ProASICPLUS Flash Family FPGAs
1-28 v5.8
Design Environment
The ProASICPLUS family of FPGAs is fully supported by
both Actel's Libero® Integrated Design Environment
(IDE) and Designer FPGA Development software. Actel
Libero IDE is an integrated design manager that
seamlessly integrates design tools while guiding the user
through the design flow, managing all design and log
files, and passing necessary design data among tools.
Additionally, Libero IDE allows users to integrate both
schematic and HDL synthesis into a single flow and verify
the entire design in a single environment (see Actel’s
website for more information about Libero IDE). Libero
IDE includes Synplify® AE from Synplicity®, ViewDraw®
AE from Mentor Graphics®, ModelSim® HDL Simulator
from Mentor Graphics, WaveFormer Lite™ AE from
SynaptiCAD®, PALACE™ AE Physical Synthesis from
Magma, and Designer software from Actel.
PALACE is an effective tool when designing with
ProASICPLUS. PALACE AE Physical Synthesis from Magma
takes an EDIF netlist and optimizes the performance of
ProASICPLUS devices through a physical placement-driven
process, ensuring that timing closure is easily achieved.
Actel's Designer software is a place-and-route tool that
provides a comprehensive suite of back-end support
tools for FPGA development. The Designer software
includes the following:
Timer – a world-class integrated static timing
analyzer and constraints editor that support
timing-driven place-and-route
NetlistViewer – a design netlist schematic viewer
ChipPlanner – a graphical floorplanner viewer and
editor
SmartPower – allows the designer to quickly
estimate the power consumption of a design
PinEditor – a graphical application for editing pin
assignments and I/O attributes
I/O Attribute Editor – displays all assigned and
unassigned I/O macros and their attributes in a
spreadsheet format
With the Designer software, a user can lock the design
pins before layout while minimally impacting the results
of place-and-route. Additionally, Actel’s back-annotation
flow is compatible with all the major simulators. Another
tool included in the Designer software is the SmartGen
macro builder, which easily creates popular and
commonly used logic functions for implementation into
your schematic or HDL design.
Actel's Designer software is compatible with the most
popular FPGA design entry and verification tools from
EDA vendors, such as Mentor Graphics, Synplicity,
Synopsys, and Cadence Design Systems. The Designer
software is available for both the Windows and UNIX
operating systems.
ISP
The user can generate *.bit or *.stp programming files
from the Designer software and can use these files to
program a device.
ProASICPLUS devices can be programmed in-system. For
more information on ISP of ProASICPLUS devices, refer to
the In-System Programming ProASICPLUS Devices and
Performing Internal In-System Programming Using Actel’s
ProASICPLUS Devices application notes. Prior to being
programmed for the first time, the ProASICPLUS device I/Os
are in a tristate condition with the pull-up resistor option
enabled.
ProASICPLUS Flash Family FPGAs
v5.8 1-29
Related Documents
Application Notes
Efficient Use of ProASIC Clock Trees
http://www.actel.com/documents/A500K_Clocktree_AN.pdf
I/O Features in ProASICPLUS Flash FPGAs
http://www.actel.com/documents/APA_LVPECL_AN.pdf
Power-Up Behavior of ProASICPLUS Devices
http://www.actel.com/documents/APA_PowerUp_AN.pdf
ProASICPLUS PLL Dynamic Reconfiguration Using JTAG
http://www.actel.com/documents/APA_PLLdynamic_AN.pdf
Using ProASICPLUS Clock Conditioning Circuits
http://www.actel.com/documents/APA_PLL_AN.pdf
In-System Programming ProASICPLUS Devices
http://www.actel.com/documents/APA_External_ISP_AN.pdf
Performing Internal In-System Programming Using Actel’s ProASICPLUS Devices
http://www.actel.com/documents/APA_Microprocessor_AN.pdf
ProASICPLUS RAM and FIFO Blocks
http://www.actel.com/documents/APA_RAM_FIFO_AN.pdf
White Paper
Design Security in Nonvolatile Flash and Antifuse FPGAs
http://www.actel.com/documents/DesignSecurity_WP.pdf
User’s Guide
Designer User’s Guide
http://www.actel.com/documents/designer_UG.pdf
SmartGen Cores Reference Guide
http://www.actel.com/documents/gen_refguide_ug.pdf
ProASIC and ProASICPLUS Macro Library Guide
http://www.actel.com/documents/pa_libguide_UG.pdf
Additional Information
The following link contains additional information on ProASICPLUS devices.
http://www.actel.com/products/proasicplus/default.aspx
ProASICPLUS Flash Family FPGAs
1-30 v5.8
Package Thermal Characteristics
The ProASICPLUS family is available in several package
types with a range of pin counts. Actel has selected
packages based on high pin count, reliability factors, and
superior thermal characteristics.
Thermal resistance defines the ability of a package to
conduct heat away from the silicon, through the
package to the surrounding air. Junction-to-ambient
thermal resistance is measured in degrees Celsius/Watt
and is represented as Theta ja (Θja). The lower the
thermal resistance, the more efficiently a package will
dissipate heat.
A package’s maximum allowed power (P) is a function of
maximum junction temperature (TJ), maximum ambient
operating temperature (TA), and junction-to-ambient
thermal resistance Θja. Maximum junction temperature is
the maximum allowable temperature on the active
surface of the IC and is 110° C. P is defined as:
EQ 1-4
Θja is a function of the rate (in linear feet per minute
(lfpm)) of airflow in contact with the package. When the
estimated power consumption exceeds the maximum
allowed power, other means of cooling, such as
increasing the airflow rate, must be used. The maximum
power dissipation allowed for a Military temperature
device is specified as a function of Θjc. The absolute
maximum junction temperature is 150°C.
The calculation of the absolute maximum power
dissipation allowed for a Military temperature
application is illustrated in the following example for a
456-pin PBGA package:
EQ 1-5
PTJTA
Θja
-
------------------
=
Table 1-16 Package Thermal Characteristics
Plastic Packages Pin Count θjc
θja
UnitsStill Air
1.0 m/s
200 ft./min.
2.5 m/s
500 ft./min.
Thin Quad Flat Pack (TQFP) 100 14.0 33.5 27.4 25.0 °C/W
Thin Quad Flat Pack (TQFP) 144 11.0 33.5 28.0 25.7 °C/W
Plastic Quad Flat Pack (PQFP)1208 8.0 26.1 22.5 20.8 °C/W
PQFP with Heat spreader2208 3.8 16.2 13.3 11.9 °C/W
Plastic Ball Grid Array (PBGA) 456 3.0 15.6 12.5 11.6 °C/W
Fine Pitch Ball Grid Array (FBGA) 144 3.8 26.9 22.9 21.5 °C/W
Fine Pitch Ball Grid Array (FBGA) 256 3.8 26.6 22.8 21.5 °C/W
Fine Pitch Ball Grid Array (FBGA)3484 3.2 18.0 14.7 13.6 °C/W
Fine Pitch Ball Grid Array (FBGA)4484 3.2 20.5 17.0 15.9 °C/W
Fine Pitch Ball Grid Array (FBGA) 676 3.2 16.4 13.0 12.0 °C/W
Fine Pitch Ball Grid Array (FBGA) 896 2.4 13.6 10.4 9.4 °C/W
Fine Pitch Ball Grid Array (FBGA) 1152 1.8 12.0 8.9 7.9 °C/W
Ceramic Quad Flat Pack (CQFP) 208 2.0 22.0 19.8 18.0 °C/W
Ceramic Quad Flat Pack (CQFP) 352 2.0 17.9 16.1 14.7 °C/W
Ceramic Column Grid Array (CCGA/LGA) 624 6.5 8.9 8.5 8.0 °C/W
Notes:
1. Valid for the following devices irrespective of temperature grade: APA075, APA150, and APA300
2. Valid for the following devices irrespective of temperature grade: APA450, APA600, APA750, and APA1000
3. Depopulated Array
4. Full array
Maximum Power Allowed Max. junction temp. (°C) Max. case temp. (°C)
θjc(°C/W)
------------------------------------------------------------------------------------------------------------------------ 150°C 125°C
3.0°C/W
--------------------------------------8.333W===
ProASICPLUS Flash Family FPGAs
v5.8 1-31
Calculating Typical Power Dissipation
ProASICPLUS device power is calculated with both a static and an active component. The active component is a function
of both the number of tiles utilized and the system speed. Power dissipation can be calculated using the following
formula:
Total Power Consumption—Ptotal
Ptotal = Pdc + Pac
where:
Global Clock Contribution—Pclock
Pclock, the clock component of power dissipation, is given by the piece-wise model:
for R < 15000 the model is: (P1 + (P2*R) - (P7*R2)) * Fs (lightly-loaded clock trees)
for R > 15000 the model is: (P10 + P11*R) * Fs (heavily-loaded clock trees)
where:
Storage-Tile Contribution—Pstorage
Pstorage, the storage-tile (Register) component of AC power dissipation, is given by
Pstorage = P5 * ms * Fs
where:
Pdc = 7 mW for the APA075
8 mW for the APA150
11 mW for the APA300
12 mW for the APA450
12 mW for the APA600
13 mW for the APA750
19 mW for the APA1000
Pdc includes the static components of PVDDP + PVDD + PAVDD
Pac =P
clock + Pstorage + Plogic + Poutputs + Pinputs + Ppll + Pmemory
P1 = 100 µW/MHz is the basic power consumption of the clock tree per MHz of the clock
P2 = 1.3 µW/MHz is the incremental power consumption of the clock tree per storage tile – also per MHz of the
clock
P7 = 0.00003 µW/MHz is a correction factor for partially-loaded clock trees
P10 = 6850 µW/MHz is the basic power consumption of the clock tree per MHz of the clock
P11 = 0.4 µW/MHz is the incremental power consumption of the clock tree per storage tile – also per MHz of
the clock
R =
the number of storage tiles clocked by this clock
Fs = the clock frequency
P5 = 1.1 μW/MHz is the average power consumption of a storage tile per MHz of its output toggling rate. The
maximum output toggling rate is Fs/2.
ms = the number of storage tiles (Register) switching during each Fs cycle
Fs = the clock frequency
ProASICPLUS Flash Family FPGAs
1-32 v5.8
Logic-Tile Contribution—Plogic
Plogic, the logic-tile component of AC power dissipation, is given by
Plogic = P3 * mc * Fs
where:
I/O Output Buffer Contribution—Poutputs
Poutputs, the I/O component of AC power dissipation, is given by
Poutputs = (P4 + (Cload * VDDP2)) * p * Fp
where:
I/O Input Buffer's Buffer Contribution—Pinputs
The input’s component of AC power dissipation is given by
Pinputs = P8 * q * Fq
where:
PLL Contribution—Ppll
Ppll = P9 * Npll
where:
RAM Contribution—Pmemory
Finally, Pmemory, the memory component of AC power consumption, is given by
Pmemory = P6 * Nmemory * Fmemory * Ememory
where:
P3 = 1.4 μW/MHz is the average power consumption of a logic tile per MHz of its output toggling rate. The
maximum output toggling rate is Fs/2.
mc = the number of logic tiles switching during each Fs cycle
Fs = the clock frequency
P4 = 326 μW/MHz is the intrinsic power consumption of an output pad normalized per MHz of the output
frequency. This is the total I/O current VDDP
.
Cload = the output load
p = the number of outputs
Fp = the average output frequency
P8 = 29 μW/MHz is the intrinsic power consumption of an input pad normalized per MHz of the input
frequency.
q = the number of inputs
Fq = the average input frequency
P9 = 7.5 mW. This value has been estimated at maximum PLL clock frequency.
NPll = number of PLLs used
P6 = 175 μW/MHz is the average power consumption of a memory block per MHz of the clock
Nmemory = the number of RAM/FIFO blocks
(1 block = 256 words * 9 bits)
Fmemory = the clock frequency of the memory
Ememory = the average number of active blocks divided by the total number of blocks (N) of the memory.
Typical values for Ememory would be 1/4 for a 1k x 8,9,16, 32 memory and 1/16 for a 4kx8,
9, 16, and 32 memory configuration
In addition, an application-dependent component to Ememory can be considered. For
example, for a 1kx8 memory configuration using only 1 cycle out of 2, Ememory = 1/4*1/2 = 1/8
ProASICPLUS Flash Family FPGAs
v5.8 1-33
The following is an APA750 example using a shift register design with 13,440 storage tiles (Register) and 0 logic tiles.
This design has one clock at 10 MHz, and 24 outputs toggling at 5 MHz. We then calculate the various components as
follows:
Pclock
=> Pclock = (P1 + (P2*R) - (P7*R2)) * Fs = 121.5 mW
Pstorage
=> Pstorage = P5 * ms * Fs = 147.8 mW
Plogic
=> Plogic = 0 mW
Poutputs
=> Poutputs = (P4 + (Cload * VDDP2)) * p * Fp = 91.4 mW
Pinputs
=> Pinputs = P8 * q * Fq = 0.3 mW
Pmemory
=> Pmemory = 0 mW
Pac
=> 361 mW
Ptotal
Pdc + Pac = 374 mW (typical)
Fs = 10 MHz
R = 13,440
ms = 13,440 (in a shift register 100% of storage tiles are toggling at each clock cycle and Fs = 10 MHz)
mc = 0 (no logic tiles in this shift register)
Cload = 40 pF
VDDP = 3.3 V
p=24
Fp = 5 MHz
q=1
Fq = 10 MHz
Nmemory = 0 (no RAM/FIFO blocks in this shift register)
ProASICPLUS Flash Family FPGAs
1-34 v5.8
Operating Conditions
Standard and –F parts are the same unless otherwise noted. All –F parts are only available as commercial.
Performance Retention
For devices operated and stored at 110°C or less, the
performance retention period is 20 years after
programming. For devices operated and stored at
temperatures greater than 110°C, refer to Table 1-19 on
page 1-35 to determine the performance retention
period. Actel does not guarantee performance if the
performance retention period is exceeded. Designers can
determine the performance retention period from the
following table.
Evaluate the percentage of time spent at the highest
temperature, then determine the next highest
temperature to which the device will be exposed. In
Table 1-19 on page 1-35, find the temperature profile
that most closely matches the application.
Example – the ambient temperature of a system cycles
between 100°C (25% of the time) and 50°C (75% of the
time). No forced ventilation cooling system is in use. An
APA600-PQ208M FPGA operates in the system,
dissipating 1 W. The package thermal resistance
(junction-to-ambient) in still air Θja is 20°C/W, indicating
that the junction temperature of the FPGA will be 120°C
(25% of the time) and 70°C (75% of the time). The entry
in Table 1-19 on page 1-35, which most closely matches
the application, is 25% at 125°C with 75% at 110°C.
Performance retention in this example is at least 16.0
years.
Note that exceeding the stated retention period may
result in a performance degradation in the FPGA below
the worst-case performance indicated in the Actel Timer.
To ensure that performance does not degrade below the
worst-case values in the Actel Timer, the FPGA must be
reprogrammed within the performance retention
period. In addition, note that performance retention is
independent of whether or not the FPGA is operating.
The retention period of a device in storage at a given
temperature will be the same as the retention period of
a device operating at that junction temperature.
Table 1-17 Absolute Maximum Ratings*
Parameter Condition Minimum Maximum Units
Supply Voltage Core (VDD)–0.33.0V
Supply Voltage I/O Ring (VDDP)–0.34.0V
DC Input Voltage –0.3 VDDP + 0.3 V
PCI DC Input Voltage –1.0 VDDP + 1.0 V
PCI DC Input Clamp Current (absolute) VIN < –1 or VIN = VDDP + 1 V 10 mA
LVPECL Input Voltage –0.3 VDDP + 0.5 V
GND 00V
Note: *Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Exposure to
absolute maximum rated conditions for extended periods may affect device reliability. Devices should not be operated outside the
Recommended Operating Conditions.
Table 1-18 Programming, Storage, and Operating Limits
Product Grade Programming Cycles (min.) Program Retention (min.)
Storage Temperature Operating
Min. Max.
TJ Max.
Junction
Temperature
Commercial 500 20 years –55°C 110°C 110°C
Industrial 500 20 years –55°C 110°C 110°C
Military 100 Refer to Table 1-19 on page 1-35 –65°C 150°C 150°C
MIL-STD-883 100 Refer to Table 1-19 on page 1-35 –65°C 150°C 150°C
ProASICPLUS Flash Family FPGAs
v5.8 1-35
Table 1-19 Military Temperature Grade Product Performance Retention
Minimum Time at TJ
110°C or below
Minimum Time at TJ
125°C or below
Minimum Time at TJ
135°C or below
Minimum Time at TJ
150°C or below
Minimum
Performance
Retention (Years)
100% 20.0
90% 10% 18.2
75% 25% 16
90% 10% 15.4
50% 50% 13.3
90% 10% 11.8
75% 25% 11.4
100% 10
90% 10% 9.1
50% 50% 8
75% 25% 8
90% 10% 7.7
75% 25% 7.3
50% 50% 6.7
75% 25% 5.7
100% 5
90% 10% 4.5
50% 50% 4.4
50% 50% 4
75% 25% 4
50% 50% 3.3
100% 2.5
ProASICPLUS Flash Family FPGAs
1-36 v5.8
Table 1-20 Recommended Maximum Operating Conditions Programming and PLL Supplies
Parameter Condition
Commercial/Industrial/Military/MIL-STD-883
UnitsMinimum Maximum
VPP During Programming 15.8 16.5 V
Normal Operation1016.5V
VPN During Programming –13.8 –13.2 V
Normal Operation2–13.8 0.5 V
IPP During Programming 25 mA
IPN During Programming 10 mA
AVDD VDD VDD V
AGND GND GND V
Notes:
1. Please refer to the "VPP Programming Supply Pin" section on page 1-77 for more information.
2. Please refer to the "VPN Programming Supply Pin" section on page 1-77 for more information.
Table 1-21 Recommended Operating Conditions
Parameter Symbol
Limits
Commercial Industrial Military/MIL-STD-883
DC Supply Voltage (2.5 V I/Os) VDD and VDDP 2.5 V ± 0.2 V 2.5 V ± 0.2 V 2.5 V ± 0.2 V
DC Supply Voltage (3.3 V I/Os) VDDP
VDD
3.3 V ± 0.3 V
2.5 V ± 0.2 V
3.3 V ± 0.3 V
2.5 V ± 0.2 V
3.3 V ± 0.3 V
2.5 V ± 0.2 V
Operating Ambient Temperature Range TA, TC0°C to 70°C –40°C to 85°C –55°C (TA) to 125°C (TC)
Maximum Operating Junction Temperature TJ110°C 110°C 150°C
Note: For I/O long-term reliability, external pull-up resistors cannot be used to increase output voltage above VDDP.
ProASICPLUS Flash Family FPGAs
v5.8 1-37
Table 1-22 DC Electrical Specifications (VDDP = 2.5 V ±0.2V)
Symbol Parameter Conditions
Commercial/Industrial/
Military/MIL-STD-8831, 2
Min. Typ. Max. Units
VOH Output High Voltage
High Drive (OB25LPH)
Low Drive (OB25LPL)
IOH = –6 mA
IOH = –12 mA
IOH = –24 mA
IOH = –3 mA
IOH = –6 mA
IOH = –8 mA
2.1
2.0
1.7
2.1
1.9
1.7
V
VOL Output Low Voltage
High Drive (OB25LPH)
Low Drive (OB25LPL)
IOL = 8 mA
IOL = 15 mA
IOL = 24 mA
IOL = 4 mA
IOL = 8 mA
IOL = 15 mA
0.2
0.4
0.7
0.2
0.4
0.7
V
VIH6 Input High Voltage 1.7 VDDP + 0.3 V
VIL7 Input Low Voltage –0.3 0.7 V
RWEAKPULLUP Weak Pull-up Resistance
(OTB25LPU)
VIN 1.25 V 6 56 kΩ
HYST Input Hysteresis Schmitt See Table 1-4 on page 1-9 0.3 0.35 0.45 V
IIN Input Current with pull up (VIN = GND) –240 – 20 µA
without pull up (VIN = GND or VDD) –10 10 µA
IDDQ Quiescent Supply Current
(standby)
Commercial
VIN = GND4 or VDD Std. 5.0 15 mA
–F35.0 25 mA
IDDQ Quiescent Supply Current
(standby)
Industrial
VIN = GND4 or VDD Std.
5.0 20 mA
IDDQ Quiescent Supply Current
(standby)
Military/MIL-STD-883
VIN = GND4 or VDD Std.
5.0 25 mA
IOZ Tristate Output Leakage Current VOH = GND or VDD Std. –10 10 µA
–F3, 5 –10 100 µA
Notes:
1. All process conditions. Commercial/Industrial: Junction Temperature: –40 to +110°C.
2. All process conditions. Military: Junction Temperature: –55 to +150°C.
3. All –F parts are available only as commercial.
4. No pull-up resistor.
5. This will not exceed 2 mA total per device.
6. During transitions, the input signal may overshoot to VDDP +1.0V for a limited time of no larger than 10% of the duty cycle.
7. During transitions, the input signal may undershoot to -1.0V for a limited time of no larger than 10% of the duty cycle.
ProASICPLUS Flash Family FPGAs
1-38 v5.8
IOSH Output Short Circuit Current High
High Drive (OB25LPH)
Low Drive (OB25LPL)
VIN = VSS
VIN = VSS
–120
–100
mA
IOSL Output Short Circuit Current Low
High Drive (OB25LPH)
Low Drive (OB25LPL)
VIN = VDDP
VIN = VDDP
100
30
mA
CI/O I/O Pad Capacitance 10 pF
CCLK Clock Input Pad Capacitance 10 pF
Table 1-22 DC Electrical Specifications (VDDP = 2.5 V ±0.2V) (Continued)
Symbol Parameter Conditions
Commercial/Industrial/
Military/MIL-STD-8831, 2
Min. Typ. Max. Units
Notes:
1. All process conditions. Commercial/Industrial: Junction Temperature: –40 to +110°C.
2. All process conditions. Military: Junction Temperature: –55 to +150°C.
3. All –F parts are available only as commercial.
4. No pull-up resistor.
5. This will not exceed 2 mA total per device.
6. During transitions, the input signal may overshoot to VDDP +1.0V for a limited time of no larger than 10% of the duty cycle.
7. During transitions, the input signal may undershoot to -1.0V for a limited time of no larger than 10% of the duty cycle.
ProASICPLUS Flash Family FPGAs
v5.8 1-39
Table 1-23 DC Electrical Specifications (VDDP = 3.3 V ±0.3 V and VDD = 2.5 V ±0.2 V)
Applies to Commercial and Industrial Temperature Only
Symbol Parameter Conditions
Commercial/Industrial1
UnitsMin. Typ. Max.
VOH Output High Voltage
3.3 V I/O, High Drive (OB33P)
3.3 V I/O, Low Drive (OB33L)
IOH = –14 mA
IOH = –24 mA
IOH = –6 mA
IOH = –12 mA
0.9VDDP
2.4
0.9VDDP
2.4
V
VOL Output Low Voltage
3.3 V I/O, High Drive (OB33P)
3.3 V I/O, Low Drive (OB33L)
IOL = 15 mA
IOL = 20 mA
IOL = 28 mA
IOL = 7 mA
IOL = 10 mA
IOL = 15 mA
0.1VDDP
0.4
0.7
0.1VDDP
0.4
0.7
V
VIH5Input High Voltage
3.3 V Schmitt Trigger Inputs
3.3 V LVTTL/LVCMOS
2.5 V Mode
1.6
2
1.7
VDDP + 0.3
VDDP + 0.3
VDDP + 0.3
V
VIL6Input Low Voltage
3.3 V Schmitt Trigger Inputs
3.3 V LVTTL/LVCMOS
2.5 V Mode
–0.3
–0.3
–0.3
0.8
0.8
0.7
V
RWEAKPULLUP Weak Pull-up Resistance
(IOB33U)
VIN 1.5 V 7 43 kΩ
RWEAKPULLUP Weak Pull-up Resistance
(IOB25U)
VIN 1.5 V 7 43 kΩ
IIN Input Current with pull up (VIN = GND) –300 –40 µA
without pull up (VIN = GND or VDD) –10 10 µA
IDDQ Quiescent Supply Current
(standby)
Commercial
VIN = GND3 or VDD Std. 5.015mA
–F25.0 25 mA
IDDQ Quiescent Supply Current
(standby)
Industrial
VIN = GND3 or VDD
Std. 5.0 20 mA
IDDQ Quiescent Supply Current
(standby)
Military
VIN = GND3 or VDD
Std. 5.0 25 mA
Notes:
1. All process conditions. Commercial/Industrial: Junction Temperature: –40 to +110°C.
2. All –F parts are only available as commercial.
3. No pull-up resistor required.
4. This will not exceed 2 mA total per device.
5. During transitions, the input signal may overshoot to VDDP +1.0 V for a limited time of no larger than 10% of the duty cycle.
6. During transitions, the input signal may undershoot to –1.0 V for a limited time of no larger than 10% of the duty cycle.
ProASICPLUS Flash Family FPGAs
1-40 v5.8
IOZ Tristate Output Leakage
Current
VOH = GND or VDD Std. –10 10 µA
–F2, 4 –10 100 µA
IOSH Output Short Circuit Current
High
3.3 V High Drive (OB33P)
3.3 V Low Drive (OB33L)
VIN = GND
VIN = GND
–200
–100
IOSL Output Short Circuit Current
Low
3.3 V High Drive
3.3 V Low Drive
VIN = VDD
VIN = VDD
200
100
CI/O I/O Pad Capacitance 10 pF
CCLK Clock Input Pad Capacitance 10 pF
Table 1-23 DC Electrical Specifications (VDDP = 3.3 V ±0.3 V and VDD = 2.5 V ±0.2 V) (Continued)
Applies to Commercial and Industrial Temperature Only
Symbol Parameter Conditions
Commercial/Industrial1
UnitsMin. Typ. Max.
Notes:
1. All process conditions. Commercial/Industrial: Junction Temperature: –40 to +110°C.
2. All –F parts are only available as commercial.
3. No pull-up resistor required.
4. This will not exceed 2 mA total per device.
5. During transitions, the input signal may overshoot to VDDP +1.0 V for a limited time of no larger than 10% of the duty cycle.
6. During transitions, the input signal may undershoot to –1.0 V for a limited time of no larger than 10% of the duty cycle.
ProASICPLUS Flash Family FPGAs
v5.8 1-41
Table 1-24 DC Electrical Specifications (VDDP = 3.3 V ±0.3 V and VDD = 2.5 V ±0.2 V)
Applies to Military Temperature and MIL-STD-883B Temperature Only
Symbol Parameter Conditions
Military/MIL-STD-883B1
UnitsMin. Typ. Max.
VOH Output High Voltage
3.3 V I/O, High Drive, High Slew
(OB33PH)
3.3V I/O, High Drive, Normal/
Low Slew (OB33PN/OB33PL)
3.3 V I/O, Low Drive , High/
Normal/Low Slew (OB33LH/
OB33LN/OB33LL)
IOH = –8 mA
IOH = –16 mA
IOH = –3mA
IOH = –8mA
IOH = –3 mA
IOH = –8 mA
0.9VDDP
2.4
0.9VDDP
2.4
0.9VDDP
2.4
V
VOL Output Low Voltage
3.3 V I/O, High Drive, High Slew
(OB33PH)
3.3V I/O, High Drive, Normal/
Low Slew (OB33PN/OB33PL))
3.3 V I/O, Low Drive, High/
Normal/Low Slew (OB33LH/
OB33LN/OB33LL)
IOL = 12 mA
IOL = 17 mA
IOL = 28 mA
IOL = 4 mA
IOL = 6 mA
IOL = 13 mA
IOL = 4 mA
IOL = 6 mA
IOL = 13 mA
0.1VDDP
0.4
0.7
0.1VDDP
0.4
0.7
0.1VDDP
0.4
0.7
V
VIH4Input High Voltage
3.3 V Schmitt Trigger Inputs
3.3 V LVTTL/LVCMOS
2.5 V Mode
1.6
2
1.7
VDDP + 0.3
VDDP + 0.3
VDDP + 0.3
V
VIL5Input Low Voltage
3.3 V Schmitt Trigger Inputs
3.3 V LVTTL/LVCMOS
2.5 V Mode
–0.3
–0.3
–0.3
0.7
0.8
0.7
V
RWEAKPULLUP Weak Pull-up Resistance
(IOB33U)
VIN 1.5 V 7 43 kΩ
RWEAKPULLUP Weak Pull-up Resistance
(IOB25U)
VIN 1.5 V 7 43 kΩ
IIN Input Current with pull up (VIN = GND) –300 –40 µA
without pull up (VIN = GND or VDD) –10 10 µA
IDDQ Quiescent Supply Current
(standby)
Commercial
VIN = GND2 or VDD Std. 5.015mA
–F 5.0 25 mA
Notes:
1. All process conditions. Military Temperature / MIL-STD-883 Class B: Junction Temperature: –55 to +125°C.
2. No pull-up resistor required.
3. This will not exceed 2 mA total per device.
4. During transitions, the input signal may overshoot to VDDP +1.0 V for a limited time of no larger than 10% of the duty cycle.
5. During transitions, the input signal may undershoot to –1.0 V for a limited time of no larger than 10% of the duty cycle.
ProASICPLUS Flash Family FPGAs
1-42 v5.8
IDDQ Quiescent Supply Current
(standby)
Industrial
VIN = GND2 or VDD
Std. 5.0 20 mA
IDDQ Quiescent Supply Current
(standby)
Military
VIN = GND2 or VDD
Std. 5.0 25 mA
IOZ Tristate Output Leakage
Current
VOH = GND or VDD Std. –10 10 µA
–F3–10 100 µA
IOSH Output Short Circuit Current
High
3.3 V High Drive (OB33P)
3.3 V Low Drive (OB33L)
VIN = GND
VIN = GND
–200
–100
IOSL Output Short Circuit Current
Low
3.3 V High Drive
3.3 V Low Drive
VIN = VDD
VIN = VDD
200
100
CI/O I/O Pad Capacitance 10 pF
CCLK Clock Input Pad Capacitance 10 pF
Table 1-24 DC Electrical Specifications (VDDP = 3.3 V ±0.3 V and VDD = 2.5 V ±0.2 V) (Continued)
Applies to Military Temperature and MIL-STD-883B Temperature Only
Symbol Parameter Conditions
Military/MIL-STD-883B1
UnitsMin. Typ. Max.
Notes:
1. All process conditions. Military Temperature / MIL-STD-883 Class B: Junction Temperature: –55 to +125°C.
2. No pull-up resistor required.
3. This will not exceed 2 mA total per device.
4. During transitions, the input signal may overshoot to VDDP +1.0 V for a limited time of no larger than 10% of the duty cycle.
5. During transitions, the input signal may undershoot to –1.0 V for a limited time of no larger than 10% of the duty cycle.
ProASICPLUS Flash Family FPGAs
v5.8 1-43
Table 1-25 DC Specifications (3.3 V PCI Operation)1
Symbol Parameter Condition
Commercial/
Industrial2,3 Military/MIL-STD- 8832,3
UnitsMin. Max. Min. Max.
VDD Supply Voltage for Core 2.3 2.7 2.3 2.7 V
VDDP Supply Voltage for I/O Ring 3.0 3.6 3.0 3.6 V
VIH Input High Voltage 0.5VDDP VDDP + 0.5 0.5VDDP VDDP + 0.5 V
VIL Input Low Voltage –0.5 0.3VDDP –0.5 0.3VDDP V
IIPU Input Pull-up Voltage40.7VDDP 0.7VDDP V
IIL Input Leakage Current50 < VIN < VDDP Std. –10 10 –50 50 μA
–F3, 6–10 100 μA
VOH Output High Voltage IOUT = –500 µA 0.9VDDP 0.9VDDP V
VOL Output Low Voltage IOUT = 1500 µA 0.1VDDP 0.1VDDP V
CIN Input Pin Capacitance (except CLK) 10 10 pF
CCLK CLK Pin Capacitance 5 12 5 12 pF
Notes:
1. For PCI operation, use GL33, OTB33PH, OB33PH, IOB33PH, IB33, or IB33S macro library cell only.
2. All process conditions. Junction Temperature: –40 to +110°C for Commercial and Industrial devices and –55 to +125°C for Military.
3. All –F parts are available as commercial only.
4. This specification is guaranteed by design. It is the minimum voltage to which pull-up resistors are calculated to pull a floated
network. Designers with applications sensitive to static power utilization should ensure that the input buffer is conducting minimum
current at this input voltage.
5. Input leakage currents include hi-Z output leakage for all bidirectional buffers with tristate outputs.
6. The sum of the leakage currents for all inputs shall not exceed 2mA per device.
ProASICPLUS Flash Family FPGAs
1-44 v5.8
Table 1-26 AC Specifications (3.3 V PCI Revision 2.2 Operation)
Symbol Parameter Condition
Commercial/Industrial/Military/MIL-STD- 883
UnitsMin. Max.
IOH(AC) Switching Current High 0 < VOUT 0.3VDDP*–12VDDP mA
0.3VDDP VOUT < 0.9VDDP*(–17.1 + (VDDP – VOUT)) mA
0.7VDDP < VOUT < VDDP*See equation C – page 124 of
the PCI Specification
document rev. 2.2
(Test Point) VOUT = 0.7VDDP*–32VDDP mA
IOL(AC) Switching Current Low VDDP > VOUT 0.6VDDP*16VDDP mA
0.6VDDP > VOUT > 0.1VDDP 1(26.7VOUT)mA
0.18VDDP > VOUT > 0*See equation D – page 124 of
the PCI Specification
document rev. 2.2
(Test Point) VOUT = 0.18VDDP 38VDDP mA
ICL Low Clamp Current –3 < VIN –1 –25 + (VIN + 1)/0.015 mA
ICH High Clamp Current VDDP + 4 > VIN VDDP + 1 25 + (VIN – VDDP – 1)/0.015 mA
slewROutput Rise Slew Rate 0.2VDDP to 0.6VDDP load*14V/ns
slewFOutput Fall Slew Rate 0.6VDDP to 0.2VDDP load*14V/ns
Note: * Refer to the PCI Specification document rev. 2.2.
pin
output
buffer
1/2 in. max
10 pF
1kΩ
pin
output
buffer 10 pF
1kΩ
Pad Loading Applicable to the Rising Edge PCI
Pad Loading Applicable to the Falling Edge PCI
ProASICPLUS Flash Family FPGAs
v5.8 1-45
Tristate Buffer Delays
Figure 1-26 Tristate Buffer Delays
Table 1-27 Worst-Case Commercial Conditions
VDDP = 3.0 V, VDD = 2.3 V, 35 pF load, TJ = 70°C
Macro Type Description
Max
tDLH1Max
tDHL2Max
tENZH3Max
tENZL4
UnitsStd. –F Std. –F Std. –F Std. –F
OTB33PH 3.3 V, PCI Output Current, High Slew Rate 2.0 2.4 2.2 2.6 2.2 2.6 2.0 2.4 ns
OTB33PN 3.3 V, High Output Current, Nominal Slew Rate 2.2 2.6 2.9 3.5 2.4 2.9 2.1 2.5 ns
OTB33PL 3.3 V, High Output Current, Low Slew Rate 2.5 3.0 3.2 3.9 2.7 3.3 2.8 3.4 ns
OTB33LH 3.3 V, Low Output Current, High Slew Rate 2.6 3.1 4.0 4.8 2.8 3.4 3.0 3.6 ns
OTB33LN 3.3 V, Low Output Current, Nominal Slew Rate 2.9 3.5 4.3 5.2 3.2 3.8 4.1 4.9 ns
OTB33LL 3.3 V, Low Output Current, Low Slew Rate 3.0 3.6 5.6 6.7 3.3 3.9 5.5 6.6 ns
Notes:
1. tDLH=Data-to-Pad High
2. tDHL=Data-to-Pad Low
3. tENZH=Enable-to-Pad, Z to High
4. tENZL = Enable-to-Pad, Z to Low
5. All –F parts are only available as commercial.
Table 1-28 Worst-Case Commercial Conditions
VDDP = 2.3 V, VDD = 2.3 V, 35 pF load, TJ = 70°C
Macro Type Description
Max
tDLH1Max
tDHL2Max
tENZH3Max
tENZL4
UnitsStd. –F Std. –F Std. –F Std. –F
OTB25LPHH 2.5 V, Low Power, High Output Current, High Slew Rate52.0 2.4 2.1 2.5 2.3 2.7 2.0 2.4 ns
OTB25LPHN 2.5 V, Low Power, High Output Current, Nominal Slew Rate52.4 2.9 3.0 3.6 2.7 3.2 2.1 2.5 ns
OTB25LPHL 2.5 V, Low Power, High Output Current, Low Slew Rate52.9 3.5 3.2 3.8 3.1 3.8 2.7 3.2 ns
OTB25LPLH 2.5 V, Low Power, Low Output Current, High Slew Rate52.7 3.3 4.6 5.5 3.0 3.6 2.6 3.1 ns
Notes:
1. tDLH=Data-to-Pad High
2. tDHL=Data-to-Pad Low
3. tENZH=Enable-to-Pad, Z to High
4. tENZL = Enable-to-Pad, Z to Low
5. Low power I/O work with VDDP=2.5 V ±10% only. VDDP=2.3 V for delays.
6. All –F parts are only available as commercial.
PAD
A
OTBx
A50%
PAD
V
OL
V
OH
50%
t
DLH
50%
50%
t
DHL
EN 50%
PAD
V
OL
50%
t
ENZL
50%
10%
EN 50%
PAD
GND
V
OH
50%
t
ENZH
50%
90%
V
DDP
35pF
EN
ProASICPLUS Flash Family FPGAs
1-46 v5.8
OTB25LPLN 2.5 V, Low Power, Low Output Current, Nominal Slew Rate53.5 4.2 4.2 5.1 3.8 4.5 3.8 4.6 ns
OTB25LPLL 2.5 V, Low Power, Low Output Current, Low Slew Rate54.0 4.8 5.3 6.4 4.2 5.1 5.1 6.1 ns
Table 1-29 Worst-Case Military Conditions
VDDP = 3.0 V, VDD = 2.3 V, 35 pF load, TJ = 125°C for Military/MIL-STD-883
Macro Type Description
Max
tDLH1Max
tDHL2Max
tENZH3Max
tENZL4
UnitsStd. Std. Std. Std.
OTB33PH 3.3 V, PCI Output Current, High Slew Rate 2.2 2.4 2.3 2.1 ns
OTB33PN 3.3 V, High Output Current, Nominal Slew Rate 2.4 3.2 2.7 2.3 ns
OTB33PL 3.3 V, High Output Current, Low Slew Rate 2.7 3.5 2.9 3.0 ns
OTB33LH 3.3 V, Low Output Current, High Slew Rate 2.7 4.3 3.0 3.1 ns
OTB33LN 3.3 V, Low Output Current, Nominal Slew Rate 3.3 4.7 3.4 4.4 ns
OTB33LL 3.3 V, Low Output Current, Low Slew Rate 3.2 6.0 3.5 5.9 ns
Notes:
1. tDLH=Data-to-Pad High
2. tDHL=Data-to-Pad Low
3. tENZH=Enable-to-Pad, Z to High
4. tENZL = Enable-to-Pad, Z to Low
Table 1-30 Worst-Case Military Conditions
VDDP = 2.3 V, VDD = 2.3 V, 35 pF load, TJ = 125°C for Military/MIL-STD-883
Macro Type Description
Max
tDLH1Max
tDHL2Max
tENZH3Max
tENZL4
UnitsStd. Std. Std. Std.
OTB25LPHH 2.5 V, Low Power, High Output Current, High Slew Rate52.3 2.3 2.4 2.1 ns
OTB25LPHN 2.5 V, Low Power, High Output Current, Nominal Slew
Rate5
2.7 3.2 2.8 2.1 ns
OTB25LPHL 2.5 V, Low Power, High Output Current, Low Slew Rate53.2 3.5 3.3 2.8 ns
OTB25LPLH 2.5 V, Low Power, Low Output Current, High Slew Rate53.0 5.0 3.2 2.8 ns
OTB25LPLN 2.5 V, Low Power, Low Output Current, Nominal Slew Rate53.7 4.5 4.1 4.1 ns
OTB25LPLL 2.5 V, Low Power, Low Output Current, Low Slew Rate54.4 5.8 4.4 5.4 ns
Notes:
1. tDLH=Data-to-Pad High
2. tDHL=Data-to-Pad Low
3. tENZH=Enable-to-Pad, Z to High
4. tENZL = Enable-to-Pad, Z to Low
5. Low power I/O work with VDDP=2.5V ±10% only. VDDP=2.3V for delays.
Table 1-28 Worst-Case Commercial Conditions
VDDP = 2.3 V, VDD = 2.3 V, 35 pF load, TJ = 70°C
Macro Type Description
Max
tDLH1Max
tDHL2Max
tENZH3Max
tENZL4
UnitsStd. –F Std. –F Std. –F Std. –F
Notes:
1. tDLH=Data-to-Pad High
2. tDHL=Data-to-Pad Low
3. tENZH=Enable-to-Pad, Z to High
4. tENZL = Enable-to-Pad, Z to Low
5. Low power I/O work with VDDP=2.5 V ±10% only. VDDP=2.3 V for delays.
6. All –F parts are only available as commercial.
ProASICPLUS Flash Family FPGAs
v5.8 1-47
Output Buffer Delays
Figure 1-27 Output Buffer Delays
Table 1-31 Worst-Case Commercial Conditions
VDDP = 3.0 V, VDD = 2.3 V, 35 pF load, TJ = 70°C
Macro Type Description
Max tDLH1Max tDHL2
UnitsStd. –F Std. –F
OB33PH 3.3 V, PCI Output Current, High Slew Rate 2.0 2.4 2.2 2.6 ns
OB33PN 3.3 V, High Output Current, Nominal Slew Rate 2.2 2.6 2.9 3.5 ns
OB33PL 3.3 V, High Output Current, Low Slew Rate 2.5 3.0 3.2 3.9 ns
OB33LH 3.3 V, Low Output Current, High Slew Rate 2.6 3.1 4.0 4.8 ns
OB33LN 3.3 V, Low Output Current, Nominal Slew Rate 2.9 3.5 4.3 5.2 ns
OB33LL 3.3 V, Low Output Current, Low Slew Rate 3.0 3.6 5.6 6.7 ns
Notes:
1. tDLH = Data-to-Pad High
2. tDHL = Data-to-Pad Low
3. All –F parts are only available as commercial.
Table 1-32 Worst-Case Commercial Conditions
VDDP = 2.3 V, VDD = 2.3 V, 35 pF load, TJ = 70°C
Macro Type Description
Max tDLH1Max tDHL2
UnitsStd. –F Std. –F
OB25LPHH 2.5 V, Low Power, High Output Current, High Slew Rate32.0 2.4 2.1 2.6 ns
OB25LPHN 2.5 V, Low Power, High Output Current, Nominal Slew Rate32.4 2.9 3.0 3.6 ns
OB25LPHL 2.5 V, Low Power, High Output Current, Low Slew Rate32.9 3.5 3.2 3.8 ns
OB25LPLH 2.5 V, Low Power, Low Output Current, High Slew Rate32.7 3.3 4.6 5.5 ns
OB25LPLN 2.5 V, Low Power, Low Output Current, Nominal Slew Rate33.5 4.2 4.2 5.1 ns
OB25LPLL 2.5 V, Low Power, Low Output Current, Low Slew Rate34.0 4.8 5.3 6.4 ns
Notes:
1. tDLH = Data-to-Pad High
2. tDHL = Data-to-Pad Low
3. Low-power I/Os work with VDDP=2.5 V ±10% only. VDDP=2.3 V for delays.
4. All –F parts are only available as commercial.
PAD
A50%
PAD
V
OL
V
OH
50%
t
DLH
50%
50%
t
DHL
35pF
A
OBx
ProASICPLUS Flash Family FPGAs
1-48 v5.8
Table 1-33 Worst-Case Military Conditions
VDDP = 3.0V, VDD = 2.3V, 35 pF load, TJ = 125°C for Military/MIL-STD-883
Macro Type Description
Max.
tDLH1Max.
tDHL2
UnitsStd. Std.
OB33PH 3.3V, PCI Output Current, High Slew Rate 2.1 2.3 ns
OB33PN 3.3V, High Output Current, Nominal Slew Rate 2.5 3.2 ns
OB33PL 3.3V, High Output Current, Low Slew Rate 2.7 3.5 ns
OB33LH 3.3V, Low Output Current, High Slew Rate 2.7 4.3 ns
OB33LN 3.3V, Low Output Current, Nominal Slew Rate 3.3 4.7 ns
OB33LL 3.3V, Low Output Current, Low Slew Rate 3.3 6.1 ns
Notes:
1. tDLH = Data-to-Pad High
2. tDHL = Data-to-Pad Low
Table 1-34 Worst-Case Military Conditions
VDDP = 2.3 V, VDD = 2.3V, 35 pF load, TJ = 125°C for Military/MIL-STD-883
Macro Type Description
Max.
tDLH1Max.
tDHL2
UnitsStd. Std.
OB25LPHH 2.5V, Low Power, High Output Current, High Slew Rate32.3 2.4 ns
OB25LPHN 2.5V, Low Power, High Output Current, Nominal Slew Rate32.7 3.3 ns
OB25LPHL 2.5V, Low Power, High Output Current, Low Slew Rate33.2 3.5 ns
OB25LPLH 2.5V, Low Power, Low Output Current, High Slew Rate33.0 5.0 ns
OB25LPLN 2.5V, Low Power, Low Output Current, Nominal Slew Rate33.9 4.6 ns
OB25LPLL 2.5V, Low Power, Low Output Current, Low Slew Rate34.3 5.7 ns
Notes:
1. tDLH = Data-to-Pad High
2. tDHL = Data-to-Pad Low
3. Low power I/O work with VDDP=2.5V ±10% only. VDDP=2.3V for delays.
ProASICPLUS Flash Family FPGAs
v5.8 1-49
Input Buffer Delays
Figure 1-28 Input Buffer Delays
Table 1-35 Worst-Case Commercial Conditions
VDDP = 3.0 V, VDD = 2.3 V, TJ = 70°C
Macro Type Description
Max. tINYH1 Max. tINYL2
UnitsStd. –F Std. –F
IB33 3.3 V, CMOS Input Levels3, No Pull-up Resistor 0.4 0.5 0.6 0.7 ns
IB33S 3.3 V, CMOS Input Levels3, No Pull-up Resistor, Schmitt Trigger 0.6 0.7 0.8 0.9 ns
Notes:
1. tINYH = Input Pad-to-Y High
2. tINYL = Input Pad-to-Y Low
3. LVTTL delays are the same as CMOS delays.
4. For LP Macros, VDDP=2.3 V for delays.
5. All –F parts are only available as commercial.
Table 1-36 Worst-Case Commercial Conditions
VDDP = 2.3 V, VDD = 2.3 V, TJ = 70°C
Macro Type Description
Max. tINYH1 Max. tINYL2
UnitsStd. –F Std. –F
IB25LP 2.5 V, CMOS Input Levels3, Low Power 0.9 1.1 0.6 0.8 ns
IB25LPS 2.5 V, CMOS Input Levels3, Low Power, Schmitt Trigger 0.7 0.9 0.9 1.1 ns
Notes:
1. tINYH = Input Pad-to-Y High
2. tINYL = Input Pad-to-Y Low
3. LVTTL delays are the same as CMOS delays.
4. For LP Macros, VDDP=2.3 V for delays.
5. All –F parts are only available as commercial.
PAD Y
PAD
V
DDP
0 V
50%
Y
GND
V
DD
50%
t
INYH
50%
50%
IN YL
IBx
t
ProASICPLUS Flash Family FPGAs
1-50 v5.8
Table 1-37 Worst-Case Military Conditions
VDDP = 3.0V, VDD = 2.3V, TJ = 125°C for Military/MIL-STD-883
Macro Type Description
Max. tINYH1 Max. tINYL2
UnitsStd. Std.
IB33 3.3V, CMOS Input Levels3, No Pull-up Resistor 0.5 0.6 ns
IB33S 3.3V, CMOS Input Levels3, No Pull-up Resistor, Schmitt Trigger 0.6 0.8 ns
Notes:
1. tINYH = Input Pad-to-Y High
2. tINYL = Input Pad-to-Y Low
3. LVTTL delays are the same as CMOS delays.
4. For LP Macros, VDDP=2.3V for delays.
Table 1-38 Worst-Case Military Conditions
VDDP = 2.3V, VDD = 2.3V, TJ = 125°C for Military/MIL-STD-883
Macro Type Description
Max. tINYH1 Max. tINYL2
UnitsStd. Std.
IB25LP 2.5V, CMOS Input Levels3, Low Power 0.9 0.7 ns
IB25LPS 2.5V, CMOS Input Levels3, Low Power, Schmitt Trigger 0.8 1.0 ns
Notes:
1. tINYH = Input Pad-to-Y High
2. tINYL = Input Pad-to-Y Low
3. LVTTL delays are the same as CMOS delays.
4. For LP Macros, VDDP=2.3V for delays.
ProASICPLUS Flash Family FPGAs
v5.8 1-51
Global Input Buffer Delays
Table 1-39 Worst-Case Commercial Conditions
VDDP = 3.0 V, VDD = 2.3 V, TJ = 70°C
Macro Type Description
Max. tINYH1 Max. tINYL2 Units
Std.3–F Std.3–F
GL33 3.3 V, CMOS Input Levels4, No Pull-up Resistor 1.0 1.2 1.1 1.3 ns
GL33S 3.3 V, CMOS Input Levels4, No Pull-up Resistor, Schmitt Trigger 1.0 1.2 1.1 1.3 ns
PECL PPECL Input Levels 1.0 1.2 1.1 1.3 ns
Notes:
1. tINYH = Input Pad-to-Y High
2. tINYL = Input Pad-to-Y Low
3. Applies to Military ProASICPLUS devices.
4. LVTTL delays are the same as CMOS delays.
5. For LP Macros, VDDP=2.3 V for delays.
6. All –F parts are only available as commercial.
Table 1-40 Worst-Case Commercial Conditions
VDDP = 2.3 V, VDD = 2.3 V, TJ = 70°C
Macro Type Description
Max. tINYH1 Max. tINYL2 Units
Std.3–F Std.3–F
GL25LP 2.5 V, CMOS Input Levels4, Low Power 1.1 1.2 1.0 1.3 ns
GL25LPS 2.5 V, CMOS Input Levels4, Low Power, Schmitt Trigger 1.3 1.6 1.0 1.1 ns
Notes:
1. tINYH = Input Pad-to-Y High
2. tINYL = Input Pad-to-Y Low
3. Applies to Military ProASICPLUS devices.
4. LVTTL delays are the same as CMOS delays.
5. For LP Macros, VDDP=2.3 V for delays.
6. All –F parts are only available as commercial.
ProASICPLUS Flash Family FPGAs
1-52 v5.8
Table 1-41 Worst-Case Military Conditions
VDDP = 3.0V, VDD = 2.3V, TJ = 125°C for Military/MIL-STD-883
Macro Type Description
Max. tINYH1 Max. tINYL2
Std. Std.
GL33 3.3V, CMOS Input Levels3, No Pull-up Resistor 1.1 1.1
GL33S 3.3V, CMOS Input Levels3, No Pull-up Resistor, Schmitt Trigger 1.1 1.1
PECL PPECL Input Levels 1.1 1.1
Notes:
1. tINYH = Input Pad-to-Y High
2. tINYL = Input Pad-to-Y Low
3. LVTTL delays are the same as CMOS delays.
4. For LP Macros, VDDP=2.3V for delays.
Table 1-42 Worst-Case Military Conditions
VDDP = 2.3V, VDD = 2.3V, TJ = 125°C for Military/MIL-STD-883
Macro Type Description
Max. tINYH1 Max. tINYL2
Std. Std.
GL25LP 2.5V, CMOS Input Levels3, Low Power 1.0 1.1
GL25LPS 2.5V, CMOS Input Levels3, Low Power, Schmitt Trigger 1.4 1.0
Notes:
1. tINYH = Input Pad-to-Y High
2. tINYL = Input Pad-to-Y Low
3. LVTTL delays are the same as CMOS delays.
4. For LP Macros, VDDP=2.3V for delays.
ProASICPLUS Flash Family FPGAs
v5.8 1-53
Predicted Global Routing Delay
Global Routing Skew
Table 1-43 Worst-Case Commercial Conditions1
VDDP = 3.0 V, VDD = 2.3 V, TJ = 70°C
Parameter Description
Max.
UnitsStd. –F2
tRCKH Input Low to High31.1 1.3 ns
tRCKL Input High to Low31.0 1.2 ns
tRCKH Input Low to High40.8 1.0 ns
tRCKL Input High to Low40.8 1.0 ns
Notes:
1. The timing delay difference between tile locations is less than 15ps.
2. All –F parts are only available as commercial.
3. Highly loaded row 50%.
4. Minimally loaded row.
Table 1-44 Worst-Case Military Conditions
VDDP = 3.0V, VDD = 2.3V, TJ = 125°C for Military/MIL-STD-883
Parameter Description Max. Units
tRCKH Input Low to High (high loaded row of 50%) 1.1 ns
tRCKL Input High to Low (high loaded row of 50%) 1.0 ns
tRCKH Input Low to High (minimally loaded row) 0.8 ns
tRCKL Input High to Low (minimally loaded row) 0.8 ns
Note: * The timing delay difference between tile locations is less than 15 ps.
Table 1-45 Worst-Case Commercial Conditions
VDDP = 3.0 V, VDD = 2.3 V, TJ = 70°C
Parameter Description
Max.
UnitsStd. –F*
tRCKSWH Maximum Skew Low to High 270 320 ps
tRCKSHH Maximum Skew High to Low 270 320 ps
Note: *All –F parts are only available as commercial.
Table 1-46 Worst-Case Commercial Conditions
VDDP = 3.0V, VDD = 2.3V, TJ = 125°C for Military/MIL-STD-883
Parameter Description Max. Units
tRCKSWH Maximum Skew Low to High 270 ps
tRCKSHH Maximum Skew High to Low 270 ps
ProASICPLUS Flash Family FPGAs
1-54 v5.8
Module Delays
Sample Macrocell Library Listing
Figure 1-29 Module Delays
Table 1-47 Worst-Case Military Conditions1
VDD = 2.3 V, TJ = 70º C, TJ = 70°C, TJ = 125°C for Military/MIL-STD-883
Cell Name Description
Std. –F2
Max Min Max Min Units
NAND2 2-Input NAND 0.5 0.6 ns
AND2 2-Input AND 0.7 0.8 ns
NOR3 3-Input NOR 0.8 1.0 ns
MUX2L 2-1 MUX with Active Low Select 0.5 0.6 ns
OA21 2-Input OR into a 2-Input AND 0.8 1.0 ns
XOR2 2-Input Exclusive OR 0.6 0.8 ns
LDL Active Low Latch (LH/HL)
LH30.9 1.1
ns
CLK-Q HL30.8 0.9 ns
tsetup 0.7 0.8 ns
thold 0.1 0.2 ns
DFFL Negative Edge-Triggered D-type Flip-Flop (LH/HL)
CLK-Q
LH30.9 1.1
ns
HL30.8 1.0 ns
tsetup 0.6 0.7 ns
thold 0.0 0.0 ns
Notes:
1. Intrinsic delays have a variable component, coupled to the input slope of the signal. These numbers assume an input slope typical of
local interconnect.
2. All –F parts are only available as commercial.
3. LH and HL refer to the Q transitions from Low to High and High to Low, respectively.
A
B
50%
Y
50%
50%50%
50% 50%
DALH
C50%50%
50%
50%
50%
DBLH
DAHL DBHL
DCHL
DCLH
50%
t
t
tt
t
t
A
B
C
Y
ProASICPLUS Flash Family FPGAs
v5.8 1-55
Table 1-48 Recommended Operating Conditions
Parameter Symbol
Limits
Commercial/Industrial Military/MIL-STD-883
Maximum Clock Frequency* fCLOCK 180 MHz 180 MHz
Maximum RAM Frequency* fRAM 150 MHz 150 MHz
Maximum Rise/Fall Time on Inputs*
Schmitt Trigger Mode (10% to 90%)
Non-Schmitt Trigger Mode (10% to
90%)
tR/tF
tR/tF
N/A
100 ns
100 ns
10 ns
Maximum LVPECL Frequency* 180 MHz 180 MHz
Maximum TCK Frequency (JTAG) fTCK 10 MHz 10 MHz
Note: *All –F parts will be 20% slower than standard commercial devices.
Table 1-49 Slew Rates Measured at C = 30pF, Nominal Power Supplies and 25°C
Type Trig. Level Rising Edge (ns) Slew Rate (V/ns) Falling Edge (ns) Slew Rate (V/ns) PCI Mode
OB33PH 10%-90% 1.60 1.65 1.65 1.60 Yes
OB33PN 10%-90% 1.57 1.68 3.32 0.80 No
OB33PL 10%-90% 1.57 1.68 1.99 1.32 No
OB33LH 10%-90% 3.80 0.70 4.84 0.55 No
OB33LN 10%-90% 4.19 0.63 3.37 0.78 No
OB33LL 10%-90% 5.49 0.48 2.98 0.89 No
OB25LPHH 10%-90% 1.55 1.29 1.56 1.28 No
OB25LPHN 10%-90% 1.70 1.18 2.08 0.96 No
OB25LPHL 10%-90% 1.97 1.02 2.09 0.96 No
OB25LPLH 10%-90% 3.57 0.56 3.93 0.51 No
OB25LPLN 10%-90% 4.65 0.43 3.28 0.61 No
OB25LPLL 10%-90% 5.52 0.36 3.44 0.58 No
Notes:
1. Standard and –F parts.
2. All –F only available as commercial.
ProASICPLUS Flash Family FPGAs
1-56 v5.8
Table 1-50 JTAG Switching Characteristics
Description Symbol Min Max Unit
Output delay from TCK falling to TDI, TMS tTCKTDI –4 4 ns
TDO Setup time before TCK rising tTDOTCK 10 ns
TDO Hold time after TCK rising tTCKTDO 0 ns
TCK period tTCK 100 21,000 ns
RCK period tRCK 100 1,000 ns
Notes:
1. For DC electrical specifications of the JTAG pins (TCK, TDI, TMS, TDO, TRST), refer to Table 1-22 on page 1-37 when VDDP = 2.5 V
and Table 1-24 on page 1-41 when VDDP = 3.3 V.
2. If RCK is being used, there is no minimum on the TCK period.
Figure 1-30 JTAG Operation Timing
TCK
TMS, TDI
TDO
tTCK
tTCKTDI
tTCKTDO
tTDOTCK
ProASICPLUS Flash Family FPGAs
v5.8 1-57
Embedded Memory Specifications
This section discusses ProASICPLUS SRAM/FIFO embedded
memory and its interface signals, including timing
diagrams that show the relationships of signals as they
pertain to single embedded memory blocks (Table 1-51).
Table 1-13 on page 1-24 shows basic SRAM and FIFO
configurations. Simultaneous read and write to the same
location must be done with care. On such accesses the DI
bus is output to the DO bus. Refer to the ProASICPLUS
RAM and FIFO Blocks application note for more
information.
Enclosed Timing Diagrams—SRAM Mode:
"Synchronous SRAM Read, Access Timed Output
Strobe (Synchronous Transparent)" section on
page 1-58
"Synchronous SRAM Read, Pipeline Mode Outputs
(Synchronous Pipelined)" section on page 1-59
"Asynchronous SRAM Write" section on page 1-60
"Asynchronous SRAM Read, Address Controlled,
RDB=0" section on page 1-61
"Asynchronous SRAM Read, RDB Controlled"
section on page 1-62
"Synchronous SRAM Write"
Embedded Memory Specifications
The difference between synchronous transparent and
pipeline modes is the timing of all the output signals
from the memory. In transparent mode, the outputs will
change within the same clock cycle to reflect the data
requested by the currently valid access to the memory. If
clock cycles are short (high clock speed), the data
requires most of the clock cycle to change to valid values
(stable signals). Processing of this data in the same clock
cycle is nearly impossible. Most designers add registers at
all outputs of the memory to push the data processing
into the next clock cycle. An entire clock cycle can then
be used to process the data. To simplify use of this
memory setup, suitable registers have been
implemented as part of the memory primitive and are
available to the user in the synchronous pipeline mode.
In this mode, the output signals will change shortly after
the second rising edge, following the initiation of the
read access.
Table 1-51 Memory Block SRAM Interface Signals
SRAM Signal Bits In/Out Description
WCLKS 1 In Write clock used on synchronization on write side
RCLKS 1 In Read clock used on synchronization on read side
RADDR<0:7> 8 In Read address
RBLKB 1 In True read block select (active Low)
RDB 1 In True read pulse (active Low)
WADDR<0:7> 8 In Write address
WBLKB 1 In Write block select (active Low)
DI<0:8> 9 In Input data bits <0:8>, <8> can be used for parity In
WRB 1 In Negative true write pulse
DO<0:8> 9 Out Output data bits <0:8>, <8> can be used for parity Out
RPE 1 Out Read parity error (active High)
WPE 1 Out Write parity error (active High)
PARODD 1 In Selects Odd parity generation/detect when high, Even when low
Note: Not all signals shown are used in all modes.
ProASICPLUS Flash Family FPGAs
1-58 v5.8
Synchronous SRAM Read, Access Timed Output Strobe (Synchronous Transparent)
Note: The plot shows the normal operation status.
Figure 1-31 Synchronous SRAM Read, Access Timed Output Strobe (Synchronous Transparent)
Table 1-52 TJ = 0°C to 110°C; VDD = 2.3 V to 2.7 V for Commercial/industrial
TJ = –55°C to 150°C, VDD = 2.3 V to 2.7 V for Military/MIL-STD-883
Symbol txxx Description Min. Max. Units Notes
CCYC Cycle time 7.5 ns
CMH Clock high phase 3.0 ns
CML Clock low phase 3.0 ns
OCA New DO access from RCLKS 7.5 ns
OCH Old DO valid from RCLKS 3.0 ns
RACH RADDR hold from RCLKS 0.5 ns
RACS RADDR setup to RCLKS 1.0 ns
RDCH RDB hold from RCLKS 0.5 ns
RDCS RDB setup to RCLKS 1.0 ns
RPCA New RPE access from RCLKS 9.5 ns
RPCH Old RPE valid from RCLKS 3.0 ns
Note: All –F speed grade devices are 20% slower than the standard numbers.
RADDR
RPE
DO
RCLKS
RBD, RBLKB
New Valid Data Out
Cycle Start
Old Data Out
New Valid
Address
tRACS
tRDCS
tRDCH
tRACH
tOCH
tRPCH
tCMH
tOCA
tRPCA
tCCYC
tCML
ProASICPLUS Flash Family FPGAs
v5.8 1-59
Synchronous SRAM Read, Pipeline Mode Outputs (Synchronous Pipelined)
Note: The plot shows the normal operation status.
Figure 1-32 Synchronous SRAM Read, Pipeline Mode Outputs (Synchronous Pipelined)
Table 1-53 TJ = 0°C to 110°C; VDD = 2.3 V to 2.7 V for Commercial/industrial
TJ = 0°C to 150°C, VDD = 2.3 V to 2.7 V for Military/MIL-STD-883
Symbol txxx Description Min. Max. Units Notes
CCYC Cycle time 7.5 ns
CMH Clock high phase 3.0 ns
CML Clock low phase 3.0 ns
OCA New DO access from RCLKS 2.0 ns
OCH Old DO valid from RCLKS 0.75 ns
RACH RADDR hold from RCLKS 0.5 ns
RACS RADDR setup to RCLKS 1.0 ns
RDCH RDB hold from RCLKS 0.5 ns
RDCS RDB setup to RCLKS 1.0 ns
RPCA New RPE access from RCLKS 4.0 ns
RPCH Old RPE valid from RCLKS 1.0 ns
Note: All –F speed grade devices are 20% slower than the standard numbers.
RCLKS
RPE
DO New Valid Data Out
Cycle Start
New RPE Out
RADDR New Valid
Address
RDB, RBLKB
tRACS tOCA
tRPCH
tOCH
tRPCA
tCML
tCMH
tCCYC
tRACH
tRDCH
tRDCS
Old Data Out
Old RPE Out
ProASICPLUS Flash Family FPGAs
1-60 v5.8
Asynchronous SRAM Write
Note: The plot shows the normal operation status.
Figure 1-33 Asynchronous SRAM Write
Table 1-54 TJ = 0°C to 110°C; VDD = 2.3 V to 2.7 V for Commercial/industrial
TJ = –55°C to 150°C, VDD = 2.3 V to 2.7 V for Military/MIL-STD-883B
Symbol txxx Description Min. Max. Units Notes
AWRH WADDR hold from WB 1.0 ns
AWRS WADDR setup to WB 0.5 ns
DWRH DI hold from WB 1.5 ns
DWRS DI setup to WB 0.5 ns PARGEN is inactive.
DWRS DI setup to WB 2.5 ns PARGEN is active.
WPDA WPE access from DI 3.0 ns WPE is invalid, while PARGEN is
active.
WPDH WPE hold from DI 1.0 ns
WRCYC Cycle time 7.5 ns
WRMH WB high phase 3.0 ns Inactive
WRML WB low phase 3.0 ns Active
Note: All –F speed grade devices are 20% slower than the standard numbers.
WRB, WBLKB
WADDR
WPE
DI
tAWRS
tWPDA
tAWRH
tDWRS
tWRML tWRMH
tWRCYC
tWPDH
tDWRH
ProASICPLUS Flash Family FPGAs
v5.8 1-61
Asynchronous SRAM Read, Address Controlled, RDB=0
Note: The plot shows the normal operation status.
Figure 1-34 Asynchronous SRAM Read, Address Controlled, RDB=0
Table 1-55 TJ = 0°C to 110°C; VDD = 2.3 V to 2.7 V for Commercial/industrial
TJ = –55°C to 150°C, VDD = 2.3 V to 2.7 V for Military/MIL-STD-883B
Symbol txxx Description Min. Max. Units Notes
ACYC Read cycle time 7.5 ns
OAA New DO access from RADDR stable 7.5 ns
OAH Old DO hold from RADDR stable 3.0 ns
RPAA New RPE access from RADDR stable 10.0 ns
RPAH Old RPE hold from RADDR stable 3.0 ns
Note: All –F speed grade devices are 20% slower than the standard numbers.
RPE
DO
RADDR
tOAH
tRPAH
tOAA
tRPAA
tACYC
ProASICPLUS Flash Family FPGAs
1-62 v5.8
Asynchronous SRAM Read, RDB Controlled
Note: The plot shows the normal operation status.
Figure 1-35 Asynchronous SRAM Read, RDB Controlled
Table 1-56 TJ = 0°C to 110°C; VDD = 2.3 V to 2.7 V for Commercial/industrial
TJ = –55°C to 150°C, VDD = 2.3 V to 2.7 V for Military/MIL-STD-883
Symbol txxx Description Min. Max. Units Notes
ORDA New DO access from RB 7.5 ns
ORDH Old DO valid from RB 3.0 ns
RDCYC Read cycle time 7.5 ns
RDMH RB high phase 3.0 ns Inactive setup to new cycle
RDML RB low phase 3.0 ns Active
RPRDA New RPE access from RB 9.5 ns
RPRDH Old RPE valid from RB 3.0 ns
Note: All –F speed grade devices are 20% slower than the standard numbers.
RB=(RDB+RBLKB)
RPE
DO
tORDH
tORDA
tRPRDA
tRDML
tRDCYC
tRDMH
tRPRDH
ProASICPLUS Flash Family FPGAs
v5.8 1-63
Synchronous SRAM Write
Note: The plot shows the normal operation status.
Figure 1-36 Synchronous SRAM Write
Table 1-57 TJ = 0°C to 110°C; VDD = 2.3 V to 2.7 V for Commercial/industrial
TJ = –55°C to 150°C, VDD = 2.3 V to 2.7 V for Military/MIL-STD-883
Symbol txxx Description Min. Max. Units Notes
CCYC Cycle time 7.5 ns
CMH Clock high phase 3.0 ns
CML Clock low phase 3.0 ns
DCH DI hold from WCLKS 0.5 ns
DCS DI setup to WCLKS 1.0 ns
WACH WADDR hold from WCLKS 0.5 ns
WDCS WADDR setup to WCLKS 1.0 ns
WPCA New WPE access from WCLKS 3.0 ns WPE is invalid while
PARGEN is active
WPCH Old WPE valid from WCLKS 0.5 ns
WRCH, WBCH WRB & WBLKB hold from WCLKS 0.5 ns
WRCS, WBCS WRB & WBLKB setup to WCLKS 1.0 ns
Notes:
1. On simultaneous read and write accesses to the same location, DI is output to DO.
2. All –F speed grade devices are 20% slower than the standard numbers.
WCLKS
WPE
WADDR, DI
WRB, WBLKB
Cycle Start
tWRCH, tWBCH
tWRCS, tWBCS
tDCS, tWDCS
tWPCH
tDCH, tWACH
tWPCA
tCMH tCML
tCCYC
ProASICPLUS Flash Family FPGAs
1-64 v5.8
Synchronous Write and Read to the Same Location
Note: The plot shows the normal operation status.
Figure 1-37 Synchronous Write and Read to the Same Location
Table 1-58 TJ = 0°C to 110°C; VDD = 2.3 V to 2.7 V for Commercial/industrial
TJ = –55°C to 150°C, VDD = 2.3 V to 2.7 V for Military/MIL-STD-883
Symbol txxx Description Min. Max. Units Notes
CCYC Cycle time 7.5 ns
CMH Clock high phase 3.0 ns
CML Clock low phase 3.0 ns
WCLKRCLKS WCLKS to RCLKS setup time 0.1 ns
WCLKRCLKH WCLKS to RCLKS hold time 7.0 ns
OCH Old DO valid from RCLKS 3.0 ns OCA/OCH displayed for
Access Timed Output
OCA New DO valid from RCLKS 7.5 ns
Notes:
1. This behavior is valid for Access Timed Output and Pipelined Mode Output. The table shows the timings of an Access Timed Output.
2. During synchronous write and synchronous read access to the same location, the new write data will be read out if the active write
clock edge occurs before or at the same time as the active read clock edge. The negative setup time insures this behavior for WCLKS
and RCLKS driven by the same design signal.
3. If WCLKS changes after the hold time, the data will be read.
4. A setup or hold time violation will result in unknown output data.
5. All –F speed grade devices are 20% slower than the standard numbers.
* New data is read if WCLKS occurs before setup time.
The data stored is read if WCLKS occurs after hold time.
RCLKS
DO
WCLKS
tWCLKRCLKH
New Data*
Last Cycle Data
tWCLKRCLKS
tOCH
tCCYC
tCMH tCML
tOCA
ProASICPLUS Flash Family FPGAs
v5.8 1-65
Asynchronous Write and Synchronous Read to the Same Location
Note: The plot shows the normal operation status.
Figure 1-38 Asynchronous Write and Synchronous Read to the Same Location
Table 1-59 TJ = 0°C to 110°C; VDD = 2.3 V to 2.7 V for Commercial/industrial
TJ = –55°C to 150°C, VDD = 2.3 V to 2.7 V for Military/MIL-STD-883
Symbol txxx Description Min. Max. Units Notes
CCYC Cycle time 7.5 ns
CMH Clock high phase 3.0 ns
CML Clock low phase 3.0 ns
WBRCLKS WB to RCLKS setup time 0.1 ns
WBRCLKH WB to RCLKS hold time 7.0 ns
OCH Old DO valid from RCLKS 3.0 ns OCA/OCH displayed for
Access Timed Output
OCA New DO valid from RCLKS 7.5 ns
DWRRCLKS DI to RCLKS setup time 0 ns
DWRH DI to WB hold time 1.5 ns
Notes:
1. This behavior is valid for Access Timed Output and Pipelined Mode Output. The table shows the timings of an Access Timed Output.
2. In asynchronous write and synchronous read access to the same location, the new write data will be read out if the active write
signal edge occurs before or at the same time as the active read clock edge. If WB changes to low after hold time, the data will be
read.
3. A setup or hold time violation will result in unknown output data.
4. All –F speed grade devices are 20% slower than the standard numbers.
* New data is read if WB occurs before setup time.
The stored data is read if WB occurs after hold time.
WB = {WRB + WBLKB}
RCLKS
DO
tBRCLKH
New Data*
Last Cycle Data
tWRCKS
tOCH
tOCA
DI
tDWRRCLKS tDWRH
tCCYC
tCMH tCML
ProASICPLUS Flash Family FPGAs
1-66 v5.8
Asynchronous Write and Read to the Same Location
Note: The plot shows the normal operation status.
Figure 1-39 Asynchronous Write and Read to the Same Location
Table 1-60 TJ = 0°C to 110°C; VDD = 2.3 V to 2.7 V for Commercial/industrial
TJ = –55°C to 150°C, VDD = 2.3 V to 2.7 V for Military/MIL-STD-883
Symbol txxx Description Min. Max. Units Notes
ORDA New DO access from RB 7.5 ns
ORDH Old DO valid from RB 3.0 ns
OWRA New DO access from WB 3.0 ns
OWRH Old DO valid from WB 0.5 ns
RAWRS RB or RADDR from WB 5.0 ns
RAWRH RB or RADDR from WB 5.0 ns
Notes:
1. During an asynchronous read cycle, each write operation (synchronous or asynchronous) to the same location will automatically
trigger a read operation which updates the read data. Refer to the ProASICPLUS RAM and FIFO Blocks application note for more
information.
2. Violation or RAWRS will disturb access to the OLD data.
3. Violation of RAWRH will disturb access to the NEWER data.
4. All –F speed grade devices are 20% slower than the standard numbers.
RB, RADDR
OLD NEWERNEW
tORDA
tORDH
tOWRH
tRAWRH
WB = {WRB+WBLKB}
DO
tOWRA
tRAWRS
ProASICPLUS Flash Family FPGAs
v5.8 1-67
Synchronous Write and Asynchronous Read to the Same Location
Note: The plot shows the normal operation status.
Figure 1-40 Synchronous Write and Asynchronous Read to the Same Location
Table 1-61 TJ = 0°C to 110°C; VDD = 2.3 V to 2.7 V for Commercial/industrial
TJ = –55°C to 150°C, VDD = 2.3 V to 2.7 V for Military/MIL-STD-883
Symbol txxx Description Min. Max. Units Notes
ORDA New DO access from RB 7.5 ns
ORDH Old DO valid from RB 3.0 ns
OWRA New DO access from WCLKS 3.0 ns
OWRH Old DO valid from WCLKS 0.5 ns
RAWCLKS RB or RADDR from WCLKS 5.0 ns
RAWCLKH RB or RADDR from WCLKS 5.0 ns
Notes:
1. During an asynchronous read cycle, each write operation (synchronous or asynchronous) to the same location will automatically
trigger a read operation which updates the read data.
2. Violation of RAWCLKS will disturb access to OLD data.
3. Violation of RAWCLKH will disturb access to NEWER data.
4. All –F speed grade devices are 20% slower than the standard numbers.
RB, RADDR
OLD NEW NEWER
tORDA
tORDH
tRAWCLKS
tRAWCLKH
WCLKS
DO
tOWRH
tOWRA
ProASICPLUS Flash Family FPGAs
1-68 v5.8
Asynchronous FIFO Full and Empty Transitions
The asynchronous FIFO accepts writes and reads while
not full or not empty. When the FIFO is full, all writes are
inhibited. Conversely, when the FIFO is empty, all reads
are inhibited. A problem is created if the FIFO is written
to during the transition from full to not full, or read
during the transition from empty to not empty. The
exact time at which the write or read operation changes
from inhibited to accepted after the read (write) signal
which causes the transition from full or empty to not full
or not empty is indeterminate. For slow cycles, this
indeterminate period starts 1 ns after the RB (WB)
transition, which deactivates full or not empty and ends
3 ns after the RB (WB) transition. For fast cycles, the
indeterminate period ends 3 ns (7.5 ns – RDL (WRL)) after
the RB (WB) transition, whichever is later (Table 1-1 on
page 1-7).
The timing diagram for write is shown in Figure 1-38 on
page 1-65. The timing diagram for read is shown in
Figure 1-39 on page 1-66. For basic SRAM configurations,
see Table 1-14 on page 1-25. When reset is asserted, the
empty flag will be asserted, the counters will reset, the
outputs go to zero, but the internal RAM is not erased.
Enclosed Timing Diagrams – FIFO Mode:
The following timing diagrams apply only to single cell;
they are not applicable to cascaded cells. For more
information, refer to the ProASICPLUS RAM/FIFO Blocks
application note.
"Asynchronous FIFO Read" section on page 1-70
"Asynchronous FIFO Write" section on page 1-71
"Synchronous FIFO Read, Access Timed Output
Strobe (Synchronous Transparent)" section on
page 1-72
"Synchronous FIFO Read, Pipeline Mode Outputs
(Synchronous Pipelined)" section on page 1-73
"Synchronous FIFO Write" section on page 1-74
"FIFO Reset" section on page 1-75
Table 1-62 Memory Block FIFO Interface Signals
FIFO Signal Bits In/Out Description
WCLKS 1 In Write clock used for synchronization on write side
RCLKS 1 In Read clock used for synchronization on read side
LEVEL <0:7>* 8 In Direct configuration implements static flag logic
RBLKB 1 In Read block select (active Low)
RDB 1 In Read pulse (active Low)
RESET 1 In Reset for FIFO pointers (active Low)
WBLKB 1 In Write block select (active Low)
DI<0:8> 9 In Input data bits <0:8>, <8> will be generated if PARGEN is true
WRB 1 In Write pulse (active Low)
FULL, EMPTY 2 Out FIFO flags. FULL prevents write and EMPTY prevents read
EQTH, GEQTH* 2 Out EQTH is true when the FIFO holds the number of words specified by the LEVEL signal.
GEQTH is true when the FIFO holds (LEVEL) words or more
DO<0:8> 9 Out Output data bits <0:8>
RPE 1 Out Read parity error (active High)
WPE 1 Out Write parity error (active High)
LGDEP <0:2> 3 In Configures DEPTH of the FIFO to 2 (LGDEP+1)
PARODD 1 In Selects Odd parity generation/detect when high, Even when low
Note: *LEVEL is always eight bits (0000.0000, 0000.0001). That means for values of DEPTH greater than 256, not all values will be
possible, e.g. for DEPTH=512, the LEVEL can only have the values 2, 4, . . ., 512. The LEVEL signal circuit will generate signals that
indicate whether the FIFO is exactly filled to the value of LEVEL (EQTH) or filled equal or higher (GEQTH) than the specified LEVEL.
Since counting starts at 0, EQTH will become true when the FIFO holds (LEVEL+1) words for 512-bit FIFOs.
ProASICPLUS Flash Family FPGAs
v5.8 1-69
Note: All –F speed grade devices are 20% slower than the standard numbers.
Figure 1-41 Write Timing Diagram
Note: All –F speed grade devices are 20% slower than the standard numbers.
Figure 1-42 Read Timing Diagram
Write acceptedWrite inhibited
FULL
RB
Write
cycle
1 ns
3 ns
WB
Read acceptedRead inhibited
EMPTY
WB
Read
cycle
1 ns
3 ns
RB
ProASICPLUS Flash Family FPGAs
1-70 v5.8
Asynchronous FIFO Read
Note: The plot shows the normal operation status.
Figure 1-43 Asynchronous FIFO Read
Table 1-63 TJ = 0°C to 110°C; VDD = 2.3 V to 2.7 V for Commercial/industrial
TJ = –55°C to 150°C, VDD = 2.3 V to 2.7 V for Military/MIL-STD-883
Symbol txxx Description Min. Max. Units Notes
ERDH, FRDH,
THRDH
Old EMPTY, FULL, EQTH, & GETH valid hold
time from RB 0.5 ns Empty/full/thresh are invalid from the end of
hold until the new access is complete
ERDA New EMPTY access from RB 3.01ns
FRDA FULL access from RB 3.01ns
ORDA New DO access from RB 7.5 ns
ORDH Old DO valid from RB 3.0 ns
RDCYC Read cycle time 7.5 ns
RDWRS WB , clearing EMPTY, setup to
RB
3.02ns Enabling the read operation
1.0 ns Inhibiting the read operation
RDH RB high phase 3.0 ns Inactive
RDL RB low phase 3.0 ns Active
RPRDA New RPE access from RB 9.5 ns
RPRDH Old RPE valid from RB 4.0 ns
THRDA EQTH or GETH access from RB4.5 ns
Notes:
1. At fast cycles, ERDA and FRDA = MAX (7.5 ns – RDL), 3.0 ns.
2. At fast cycles, RDWRS (for enabling read) = MAX (7.5 ns – WRL), 3.0 ns.
3. All –F speed grade devices are 20% slower than the standard numbers.
RB = (RDB+RBLKB)
RPE
RDATA
EMPTY
EQTH, GETH
FULL
(Empty inhibits read)
Cycle Start
WB
tRDWRS tERDH, tFRDH
tERDA, tFRDA
tTHRDH
tORDH
tRPRDH
tORDA
tRPRDA
tRDL tRDH
tRPRDA
tRDL
tRDCYC
tRDH
tTHRDA
ProASICPLUS Flash Family FPGAs
v5.8 1-71
Asynchronous FIFO Write
Note: The plot shows the normal operation status.
Figure 1-44 Asynchronous FIFO Write
Table 1-64 TJ = 0°C to 110°C; VDD = 2.3 V to 2.7 V for Commercial/industrial
TJ = –55°C to 150°C, VDD = 2.3 V to 2.7 V for Military/MIL-STD-883
Symbol txxx Description Min. Max. Units Notes
DWRH DI hold from WB 1.5 ns
DWRS DI setup to WB 0.5 ns PARGEN is inactive
DWRS DI setup to WB 2.5 ns PARGEN is active
EWRH, FWRH,
THWRH
Old EMPTY, FULL, EQTH, & GETH valid hold
time after WB 0.5 ns Empty/full/thresh are invalid from the end
of hold until the new access is complete
EWRA EMPTY access from WB 3.01ns
FWRA New FULL access from WB 3.01ns
THWRA EQTH or GETH access from WB 4.5 ns
WPDA WPE access from DI 3.0 ns WPE is invalid while PARGEN is active
WPDH WPE hold from DI 1.0 ns
WRCYC Cycle time 7.5 ns
WRRDS RB , clearing FULL, setup to
WB
3.02ns Enabling the write operation
1.0 Inhibiting the write operation
WRH WB high phase 3.0 ns Inactive
WRL WB low phase 3.0 ns Active
Notes:
1. At fast cycles, EWRA, FWRA = MAX (7.5 ns – WRL), 3.0 ns.
2. At fast cycles, WRRDS (for enabling write) = MAX (7.5 ns – RDL), 3.0 ns.
3. All –F speed grade devices are 20% slower than the standard numbers.
4. After FIFO reset, WRB needs an initial falling edge prior to any write actions.
WPE
WDATA (Full inhibits write)
WB = (WRB+WBLKB)
EMPTY
EQTH, GETH
FULL
Cycle Start
RB
tWRRDS tDWRH
tWPDH
tWPDA
tDWRS
tEWRH, tFWRH
tEWRA, tFWRA
tTHWRH
tTHWRA
tWRH
tWRL
tWRCYC
ProASICPLUS Flash Family FPGAs
1-72 v5.8
Synchronous FIFO Read, Access Timed Output Strobe (Synchronous Transparent)
Note: The plot shows the normal operation status.
Figure 1-45 Synchronous FIFO Read, Access Timed Output Strobe (Synchronous Transparent)
Table 1-65 TJ = 0°C to 110°C; VDD = 2.3 V to 2.7 V for Commercial/industrial
TJ = –55°C to 150°C, VDD = 2.3 V to 2.7 V for Military/MIL-STD-883
Symbol txxx Description Min. Max. Units Notes
CCYC Cycle time 7.5 ns
CMH Clock high phase 3.0 ns
CML Clock low phase 3.0 ns
ECBA New EMPTY access from RCLKS 3.01ns
FCBA FULL access from RCLKS 3.01ns
ECBH, FCBH,
THCBH
Old EMPTY, FULL, EQTH, & GETH valid hold
time from RCLKS 1.0 ns Empty/full/thresh are invalid from the end
of hold until the new access is complete
OCA New DO access from RCLKS 7.5 ns
OCH Old DO valid from RCLKS 3.0 ns
RDCH RDB hold from RCLKS 0.5 ns
RDCS RDB setup to RCLKS 1.0 ns
RPCA New RPE access from RCLKS 9.5 ns
RPCH Old RPE valid from RCLKS 3.0 ns
HCBA EQTH or GETH access from RCLKS 4.5 ns
Notes:
1. At fast cycles, ECBA and FCBA = MAX (7.5 ns – CMH), 3.0 ns.
2. All –F speed grade devices are 20% slower than the standard numbers.
RCLK
RPE
RDATA
EMPTY
EQTH, GETH
FULL
RDB
tRDCH
tOCH
tRPCH
tRDCS
Old Data Out New Valid Data Out (Empty Inhibits Read)
Cycle Start
tECBH, tFCBH
tECBA, tFCBA
tOCA
tRPCA
tCMH tCML
tCCYC
tTHCBH
tHCBA
ProASICPLUS Flash Family FPGAs
v5.8 1-73
Synchronous FIFO Read, Pipeline Mode Outputs (Synchronous Pipelined)
Note: The plot shows the normal operation status.
Figure 1-46 Synchronous FIFO Read, Pipeline Mode Outputs (Synchronous Pipelined)
Table 1-66 TJ = 0°C to 110°C; VDD = 2.3 V to 2.7 V for Commercial/industrial
TJ = –55°C to 150°C, VDD = 2.3 V to 2.7 V for Military/MIL-STD-883
Symbol txxx Description Min. Max. Units Notes
CCYC Cycle time 7.5 ns
CMH Clock high phase 3.0 ns
CML Clock low phase 3.0 ns
ECBA New EMPTY access from RCLKS 3.01ns
FCBA FULL access from RCLKS 3.01ns
ECBH, FCBH,
THCBH
Old EMPTY, FULL, EQTH, & GETH valid hold
time from RCLKS
1.0 ns Empty/full/thresh are invalid from the end of
hold until the new access is complete
OCA New DO access from RCLKS 2.0 ns
OCH Old DO valid from RCLKS 0.75 ns
RDCH RDB hold from RCLKS 0.5 ns
RDCS RDB setup to RCLKS 1.0 ns
RPCA New RPE access from RCLKS 4.0 ns
RPCH Old RPE valid from RCLKS 1.0 ns
HCBA EQTH or GETH access from RCLKS 4.5 ns
Notes:
1. At fast cycles, ECBA and FCBA = MAX (7.5 ns – CMS), 3.0 ns.
2. All –F speed grade devices are 20% slower than the standard numbers.
RCLK
RPE
RDATA
EMPTY
EQTH, GETH
FULL
Old Data Out New Valid Data Out
RDB
Cycle Start
Old RPE Out New RPE Out
tECBH, tFCBH
tRDCH
tRDCS
tOCA
tECBA, tFCBA
tTHCBH
tHCBA
tCMH tCML
tCCYC
tRPCH
tOCH
tRPCA
ProASICPLUS Flash Family FPGAs
1-74 v5.8
Synchronous FIFO Write
Note: The plot shows the normal operation status.
Figure 1-47 Synchronous FIFO Write
Table 1-67 TJ = 0°C to 110°C; VDD = 2.3 V to 2.7 V for Commercial/industrial
TJ = –55°C to 150°C, VDD = 2.3 V to 2.7 V for Military/MIL-STD-883
Symbol txxx Description Min. Max. Units Notes
CCYC Cycle time 7.5 ns
CMH Clock high phase 3.0 ns
CML Clock low phase 3.0 ns
DCH DI hold from WCLKS 0.5 ns
DCS DI setup to WCLKS 1.0 ns
FCBA New FULL access from WCLKS 3.01ns
ECBA EMPTY access from WCLKS 3.01ns
ECBH,
FCBH,
HCBH
Old EMPTY, FULL, EQTH, & GETH valid hold
time from WCLKS 1.0 ns Empty/full/thresh are invalid from the end of
hold until the new access is complete
HCBA EQTH or GETH access from WCLKS 4.5 ns
WPCA New WPE access from WCLKS 3.0 ns WPE is invalid, while PARGEN is active
WPCH Old WPE valid from WCLKS 0.5 ns
WRCH, WBCH WRB & WBLKB hold from WCLKS 0.5 ns
WRCS, WBCS WRB & WBLKB setup to WCLKS 1.0 ns
Notes:
1. At fast cycles, ECBA and FCBA = MAX (7.5 ns – CMH), 3.0 ns.
2. All –F speed grade devices are 20% slower than the standard numbers.
WCLKS
WPE
DI
EMPTY
EQTH, GETH
FULL
(Full Inhibits Write)
WRB, WBLKB
Cycle Start
tWRCH, tWBCH tECBH, tFCBH
tECBA, tFCBA
tHCBA
tWRCS, tWBCS
tDCS
tWPCA
tCMH tCML
tCCYC
tWPCH
tDCH
tHCBH
ProASICPLUS Flash Family FPGAs
v5.8 1-75
FIFO Reset
Notes:
1. During reset, either the enables (WRB and RBD) OR the clocks (WCLKS and RCKLS) must be low.
2. The plot shows the normal operation status.
Figure 1-48 FIFO Reset
Table 1-68 TJ = 0°C to 110°C; VDD = 2.3 V to 2.7 V for Commercial/industrial
TJ = –55°C to 150°C, VDD = 2.3 V to 2.7 V for Military/MIL-STD-883
Symbol txxx Description Min. Max. Units Notes
CBRSH1WCLKS or RCLKS hold from RESETB 1.5 ns Synchronous mode only
CBRSS1WCLKS or RCLKS setup to RESETB 1.5 ns Synchronous mode only
ERSA New EMPTY access from RESETB 3.0 ns
FRSA FULL access from RESETB 3.0 ns
RSL RESETB low phase 7.5 ns
THRSA EQTH or GETH access from RESETB 4.5 ns
WBRSH1WB hold from RESETB 1.5 ns Asynchronous mode only
WBRSS1WB setup to RESETB 1.5 ns Asynchronous mode only
Notes:
1. During rest, the enables (WRB and RBD) must be high OR the clocks (WCLKS and RCKLS) must be low.
2. All –F speed grade devices are 20% slower than the standard numbers.
RESETB
EMPTY
EQTH, GETH
FULL
WRB/RBD
1
Cycle Start
Cycle Start
WCLKS, RCLKS
1
tERSA, tFRSA
tTHRSA
tCBRSS
tWBRSS
tCBRSH
tWBRSH
tRSL
Pin Description
User Pins
I/O User Input/Output
The I/O pin functions as an input, output, tristate, or
bidirectional buffer. Input and output signal levels are
compatible with standard LVTTL and LVCMOS
specifications. Unused I/O pins are configured as inputs
with pull-up resistors.
NC No Connect
To maintain compatibility with other Actel ProASICPLUS
products, it is recommended that this pin not be
connected to the circuitry on the board.
GL Global Pin
Low skew input pin for clock or other global signals. This
pin can be configured with an internal pull-up resistor.
When it is not connected to the global network or the
clock conditioning circuit, it can be configured and used
as a normal I/O.
GLMX Global Multiplexing Pin
Low skew input pin for clock or other global signals. This
pin can be used in one of two special ways (refer to
Actel’s Using ProASICPLUS Clock Conditioning Circuits).
When the external feedback option is selected for the
PLL block, this pin is routed as the external feedback
source to the clock conditioning circuit.
In applications where two different signals access the
same global net at different times through the use of
GLMXx and GLMXLx macros, this pin will be fixed as one
of the source pins.
This pin can be configured with an internal pull-up
resistor. When it is not connected to the global network
or the clock conditioning circuit, it can be configured and
used as any normal I/O. If not used, the GLMXx pin will
be configured as an input with pull-up.
Dedicated Pins
GND Ground
Common ground supply voltage.
VDD Logic Array Power Supply Pin
2.5 V supply voltage.
VDDP I/O Pad Power Supply Pin
2.5 V or 3.3 V supply voltage.
TMS Test Mode Select
The TMS pin controls the use of boundary-scan circuitry.
This pin has an internal pull-up resistor.
TCK Test Clock
Clock input pin for boundary scan (maximum 10 MHz). Actel
recommends adding a nominal 20 kΩ pull-up resistor to this
pin.
TDI Test Data In
Serial input for boundary scan. A dedicated pull-up
resistor is included to pull this pin high when not being
driven.
TDO Test Data Out
Serial output for boundary scan. Actel recommends
adding a nominal 20kΩ pull-up resistor to this pin.
TRST Test Reset Input
Asynchronous, active-low input pin for resetting
boundary-scan circuitry. This pin has an internal pull-up
resistor. For more information, please refer to Power-up
Behavior of ProASICPLUS Devices application note.
Special Function Pins
RCK Running Clock
A free running clock is needed during programming if
the programmer cannot guarantee that TCK will be
uninterrupted. If not used, this pin has an internal pull-
up and can be left floating.
NPECL User Negative Input
Provides high speed clock or data signals to the PLL
block. If unused, leave the pin unconnected.
PPECL User Positive Input
Provides high speed clock or data signals to the PLL
block. If unused, leave the pin unconnected.
AVDD PLL Power Supply
Analog VDD should be VDD (core voltage) 2.5 V (nominal)
and be decoupled from GND with suitable decoupling
capacitors to reduce noise. For more information, refer
to Actel’s Using ProASICPLUS Clock Conditioning Circuits
application note. If the clock conditioning circuitry is not
used in a design, AVDD can either be left floating or tied
to 2.5 V.
AGND PLL Power Ground
The analog ground can be connected to the system
ground. For more information, refer to Actel’s Using
ProASICPLUS Clock Conditioning Circuits application note.
If the PLLs or clock conditioning circuitry are not used in
a design, AGND should be tied to GND.
ProASICPLUS Flash Family FPGAs
v5.8 1-77
VPP Programming Supply Pin
This pin may be connected to any voltage between GND
and 16.5 V during normal operation, or it can be left
unconnected.2 For information on using this pin during
programming, see the In-System Programming
ProASICPLUS Devices application note. Actel recommends
floating the pin or connecting it to VDDP
.
VPN Programming Supply Pin
This pin may be connected to any voltage between 0.5V
and –13.8 V during normal operation, or it can be left
unconnected.3 For information on using this pin during
programming, see the In-System Programming
ProASICPLUS Devices application note. Actel recommends
floating the pin or connecting it to GND.
Recommended Design Practice
for VPN/VPP
ProASICPLUS Devices – APA450, APA600,
APA750, APA1000
Bypass capacitors are required from VPP to GND and VPN
to GND for all ProASICPLUS devices during programming.
During the erase cycle, ProASICPLUS devices may have
current surges on the VPP and VPN power supplies. The
only way to maintain the integrity of the power
distribution to the ProASICPLUS device during these
current surges is to counteract the inductance of the
finite length conductors that distribute the power to the
device. This can be accomplished by providing sufficient
bypass capacitance between the VPP and VPN pins and
GND (using the shortest paths possible). Without
sufficient bypass capacitance to counteract the
inductance, the VPP and VPN pins may incur a voltage
spike beyond the voltage that the device can withstand.
This issue applies to all programming configurations.
The solution prevents spikes from damaging the
ProASICPLUS devices. Bypass capacitors are required for
the VPP and VPN pads. Use a 0.01 µF to 0.1 µF ceramic
capacitor with a 25 V or greater rating. To filter low-
frequency noise (decoupling), use a 4.7 µF (low ESR, <1
<Ω, tantalum, 25 V or greater rating) capacitor. The
capacitors should be located as close to the device pins as
possible (within 2.5 cm is desirable). The smaller, high-
frequency capacitor should be placed closer to the device
pins than the larger low-frequency capacitor. The same
dual-capacitor circuit should be used on both the VPP and
VPN pins (Figure 1-49).
ProASICPLUS Devices – APA075, APA150,
APA300
These devices do not require bypass capacitors on the VPP
and VPN pins as long as the total combined distance of
the programming cable and the trace length on the
board is less than or equal to 30 inches. Note: For trace
lengths greater than 30 inches, use the bypass capacitor
recommendations in the previous section.
2. There is a nominal 40 kΩ pull-up resistor on VPP
.
3. There is a nominal 40 kΩ pull-down resistor on VPN.
Figure 1-49 ProASICPLUS VPP and VPN Capacitor Requirements
2.5cm
0.1μF
to
0.01μFProgramming
Header
or
Supplies
4.7μF
Actel
ProASIC
Device
+
+
+
_
V
PP
V
PN
+
_
0.1μF
to
0.01μF
4.7μF
PLUS