CS22-12io1M V RRM = I T(AV)M = I T(RMS) = High Efficiency Thyristor Single Thyristor 1200 V 16 A 25 A Part number 2 CS22-12io1M 1 3 Backside: isolated Features / Advantages: Applications: Package: Thyristor for line frequency Planar passivated chip Long-term stability Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Housing: TO-220FP rIndustry standard outline rPlastic overmolded tab for r electrical isolation rIsolation Voltage 2500 V rEpoxy meets UL 94V-0 rRoHS compliant Ratings Conditions Symbol Definition VRSM/DSM max. non-repetitive reverse/forward blocking voltage VRRM/DRM max. repetitive reverse/forward blocking voltage I R/D reverse current, drain current VT forward voltage drop V 10 A VR/D = 1200 V TVJ = 150 C 2 mA TVJ = 25C 1.30 V 1.59 V 1.27 V IT = 30 A IT = 60 A IT = 30 A IT = 60 A RMS forward current 180 sine for power loss calculation only R thJC thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation PGM max. gate power dissipation TVJ = 125 C 1.65 V T VJ = 150 C 16 A 25 A TVJ = 150 C 0.86 V 13.2 m 2.50 K/W 150 C TC = 25C 50 W T C = 150 C 10 W -40 t P = 30 s t P = 300 s PGAV average gate power dissipation I TSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved V 1200 I T(RMS) slope resistance 1300 TVJ = 25C TC = 90 C threshold voltage Unit max. TVJ = 25C average forward current rT typ. VR/D = 1200 V I T(AV)M VT0 min. TVJ = 25C 5 W 0.5 W t = 10 ms; (50 Hz), sine TVJ = 45 C 300 A t = 8,3 ms; (60 Hz), sine VR = 0 V 325 A t = 10 ms; (50 Hz), sine TVJ = 150 C 255 A t = 8,3 ms; (60 Hz), sine VR = 0 V 275 A t = 10 ms; (50 Hz), sine TVJ = 45 C 450 As t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 440 As TVJ = 150 C 325 As 315 As t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25C Data according to IEC 60747and per diode unless otherwise specified 13 pF 20110530a CS22-12io1M Ratings Symbol Definition Conditions (di/dt) cr critical rate of rise of current TVJ = 125 C min. typ. max. Unit 40 A 150 VD = VDRM non-repetitive, I T = 20 A 500 A/s VD = VDRM TVJ = 125 C 500 V/s TVJ = 25 C 1.3 V TVJ = -40 C 1.6 V TVJ = 25 C 30 mA TVJ = -40 C 50 mA TVJ = 150 C 0.2 V 1 mA TVJ = 25 C 90 mA TVJ = 25 C 60 mA TVJ = 25 C 2 s repetitive, IT = A/s f = 50 Hz; tP = 200 s IG = (dv/dt) cr critical rate of rise of voltage VGT gate trigger voltage 0.3 A; di G /dt = 0.3 A/s R GK = ; method 1 (linear voltage rise) I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = 6 V VD = 6 V VD = VDRM t p = 10 s IG = IH holding current t gd gate controlled delay time turn-off time 0.3 A/s VD = 6 V R GK = VD = 1/2 VDRM IG = tq 0.3 A; di G /dt = 0.3 A; di G /dt = 0.3 A/s VR = 100 V; I T = 30 A TVJ = 150 C 150 s VD = VDRM ; t p = 200 s di/dt = 10 A/s; dv/dt = 20 V/s IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110530a CS22-12io1M Ratings Symbol Definition Conditions I RMS RMS current per terminal R thCH thermal resistance case to heatsink Tstg storage temperature min. typ. max. Unit 35 0.50 -55 Weight K/W 150 2 MD mounting torque FC mounting force with clip V ISOL isolation voltage d Spp/App creepage | striking distance on surface | through air terminal to terminal d Spb/Apb creepage | striking distance on surface | through air terminal to backside t = 1 second A C g 0.4 0.6 Nm 20 60 N 2500 V 2000 V 1.6 1.0 mm 2.5 2.5 mm t = 1 minute Product Marking Marking on product Logo DateCode Assembly Code abcdef YYWW Z XXXXXX Assembly Line Ordering Standard Part Name CS22-12io1M Similar Part CS22-08io1M CMA30E1600PN CLA30E1200PB CLA30E1200PC CLA30E1200HB CMA30E1600PB IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Marking on Product CS22-12io1M Package TO-220ABFP (3) TO-220ABFP (3) TO-220AB (3) TO-263AB (D2Pak) TO-247AD (3) TO-220AB (3) Delivering Mode Tube Base Qty Code Key 50 500226 Voltage class 800 1600 1200 1200 1200 1600 Data according to IEC 60747and per diode unless otherwise specified 20110530a CS22-12io1M Outlines TO-220FP OP A E A1 H Q D L1 A2 L b1 b c e IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110530a CS22-12io1M 60 1000 300 VR = 0 V 50 Hz, 80% VRRM 50 250 40 IT [A] 200 TVJ = 45C ITSM 30 2 It TVJ = 45C 150 [A] 20 [A2s] TVJ = 125C 100 TVJ = 125C TVJ = 125C 10 50 TVJ = 25C 0 0.5 100 0 1.0 1.5 2.0 0.01 0.1 VT [V] 1 0.3 2 3 Fig. 1 Forward characteristics 2 Fig. 3 I t versus time (1-10 s) Fig. 2 Surge overload current ITSM: crest value, t: duration 102 4 4 5 6 7 8 910 t [ms] t [s] 30 IGD: TVJ = 125C B 25 C B VG IGD: TVJ = 25C 2 [V] 1 IGD: TVJ = 0C B IGD: TVJ = -40C 180 sine 3 101 20 tgd ITAVM [s] [A] 15 lim. 100 IGD: TVJ = 25C 10 typ. 5 A 0 0 25 50 75 10-1 10-2 0 10-1 IG [mA] 100 101 IG [A] Fig. 4 Gate voltage & gate current Fig. 5 Gate controlled delay time tgd Triggering: A = no; B = possible; C = safe 0 25 50 75 100 125 150 175 Tcase [C] Fig. 6 Max. forward current at case temperature 3 ZthJH 2 Constants for ZthJH calculation: [K/W] i Rthi (K/W) 1 0.015 2 0.124 3 0.395 4 1.606 5 0.86 1 0 0.001 0.01 0.1 1 10 ti (s) 0.0011 0.0019 0.07 1.1 4.9 100 t [s] Fig. 7 Typ. transient thermal impedance junction to heatsink IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110530a