CS22-12io1M
V = V
A²s
A²s
A²s
A²s
High Efficiency Thyristor
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
R/D
V
IA
V
T
1.30
R2.50 K/W
R/D
2 1
3
min.
16
Applications:
V
RSM/DSM
V1300
10T = 25°C
VJ
T = °C
VJ
mA2
Package:
Part number
V = V
R/D
T = 25°C
VJ
I = A
T
V
T = °C
C
90
P
tot
50 WT = 25°C
C
T
VJ
150 °C-40
V
I
RRM
=
=
1200
25
30
CS22-12io1M
V
A
1200
max. non-repetitive reverse/forward blocking voltage
reverse current, drain current
forward voltage drop
virt ua l j un ctio n temp e r ature
total power dissipation
Conditions Unit
1.59
T = 25°C
VJ
150
V
T0
V0.86T = °C
VJ
150
r
T
13.2 mΩ
V1.27T = °C
VJ
I = A
T
V
30
1.65
I = A
T
60
I = A
T
60
threshold voltage
slope resistance for power loss calculation only
Backside: isolated
=16
A
● Housing:
Single Thyristor
TO-220FP
●
rIndustry standard outline
●
rPlastic overmolded tab for
●relectrical isolation
●
rIsolation Voltage 2500 V
●
rEpoxy meets UL 94V-0
●
rRoHS compliant
µA
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
125
V
RRM/DRM
V1200
max. re pe titiv e re vers e/forward blockin g volt a ge T = 25°C
VJ
IA25
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
150
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
13
j
unction capacitance V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = °C
VJ
45
max. forward surge current
T = °C
VJ
150
I²t T = °C45
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
150
I
300
325
325
315
A
A
A
A
255
275
450
440
1200
300 µs
RMS forward current
T
(
RMS
)
T(RMS)
T(AV)M
180° sine
T
(
AV
)
M
average forward current
IXYS reserves the right to change limits, conditions and dimensions. 20110530a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
CS22-12io1M
(di/dt)
cr
A/µ
s
150
repetitive, I =
T
VJ
= 125°C
critical rate of rise of current
V
GT
gate trigger voltage V= 6 V T = °C25
(dv/dt) T = 125 °C
critical rate of rise of voltage
A/µ
s
500
V/µ
s
f = 50 Hz; t = 200 µs
IA;
V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
Symbol Definition Ratings
typ. max.min.Conditions Uni
t
40 A
T
P
G
= 0.3 di /dt A/µs
G
=0.3
DDRM
cr
V = ⅔ V
D DRM
GK
500
1.3
V
T= °C-40
VJ
I
GT
gate trigger current V= 6 V T = °C25
DVJ
30 m
A
T= °C-40
VJ
1.6
V
50 m
A
V
GD
gate non-trigger voltage T= °C
VJ
0.2
V
I
GD
gate non-trigger current 1m
A
V = ⅔ V
D DRM
150
latching current T= °C
VJ
90 m
A
I
L
25tµs
p
=10
IA;
G
= 0.3 di /dt A/µs
G
=0.3
holding current T= °C
VJ
60 m
A
I
H
25V= 6 V
D
R = ∞
GK
gate controlled delay tim e T= °C
VJ
2µst
gd
25
IA;
G
= 0.3 di /dt A/µs
G
=0.3
V = ½ V
D DRM
turn-off time T= °C
VJ
150 µst
q
di/dt = A/µs;10 dv/dt = V/µs20
V =
R
100 V; I A
T
=30
V = ⅔ V
D DRM
tµs
p
= 200
non-repetitive, I = 20 A
T
;
150
IXYS reserves the right to change limits, conditions and dimensions. 20110530a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
CS22-12io1M
I
RMS
A
per terminal 35
R
thCH
K/W0.50
M
D
Nm0.6
mounting torque 0.4
T
stg
°C150
storage temperature -55
Weight g2
Symbol Definition Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
F
C
N60
mount ing forc e with cl ip 20
Ordering Delivering Mode Base Qty Code Key
Standard Part Name
CS22-12io1M 500226Tube 50
XXXXXX
YYWW Z
Logo
Marking on product
DateCode
Assembly Code
abcdef
Product Marking
Assembly Line
CS22-08io1M
CMA30E1600PN
CLA30E1200PB
CLA30E1200PC
TO-220ABFP (3)
TO-220ABFP (3)
TO-220AB (3)
TO-263AB (D2Pak)
Similar Part Package
Marking on Pr oduct
CS22-12io1M
800
1600
1200
1200
Voltage class
CLA30E1200HB
CMA30E1600PB
TO-247AD (3)
TO-220AB (3)
1200
1600
V
ISOL
V2500
t = 1 second
V2000
t = 1 minute
isolation voltage
mm
mm
1.6 1.0
2.5 2.5
d
Spp/App
creepage | striking distance on surface | through air terminal to terminal
d
Spb/Apb
creepage | striking distance on surface | through air terminal to backside
IXYS reserves the right to change limits, conditions and dimensions. 20110530a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
CS22-12io1M
Ø P
A
A1
H
A2
Q
L1
D
E
L
b
b1 c
e
Outlines TO-220FP
IXYS reserves the right to change limits, conditions and dimensions. 20110530a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
CS22-12io1M
0 25 50 75 100 125 150 175
0
5
10
15
20
25
30
0255075
0
1
2
3
4
10-2 10-1 100101
10-1
100
101
102
0.01 0.1
0
50
100
150
200
250
300
0.5 1.0 1.5 2.0
0
10
20
30
40
50
60
0.001 0.01 0.1 1 10 100
0
1
2
3
IT
[A]
t[s]VT[V]
10987654321
100
1000
I2t
[A2s]
t[ms]
ITSM
[A]
TVJ = 25°C
TVJ = 125°C
TVJ = 45°C
50 Hz, 80% VRRM
TVJ = 125°C
TVJ = 45°C
VR= 0 V
VG
[V]
IG[mA]
ITAVM
[A]
Tcase [°C]
ZthJH
[K/W]
t[s]
Fig. 1 Forward characteristics Fig. 2 Surge overload current
ITSM: crest value, t: duration
Fig. 3 I2t versus time (1-10 s)
Fig. 4 Gate voltage & gate current
Triggering: A = no; B = possible; C = safe
Fig. 6 Max. forward current at
case temperature
Fig. 7 Typ. transient thermal impedance junction to heatsink
IGD:T
VJ =125°C
IGD: TVJ = 25°C
IGD
:T
VJ =25°C
IGD
:T
VJ =0°C
IGD
:T
VJ = -40°C
A
B
B
B
C
tgd
[µs]
IG[A]
lim.
typ.
Fig. 5 Gate controlled delay time tgd
180° sine
TVJ = 125°C
0.3
Constants for ZthJH calculation:
iR
thi (K/W) ti(s)
1 0.015 0.0011
2 0.124 0.0019
3 0.395 0.07
4 1.606 1.1
5 0.86 4.9
IXYS reserves the right to change limits, conditions and dimensions. 20110530a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
