© Semiconductor Components Industries, LLC, 2017
April, 2018 − Rev. 2
1Publication Order Number:
FFSH10120ADN−F155/D
FFSH10120ADN-F155
Silicon Carbide Schottky
Diode
1200 V, 10 A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
Features
•Max Junction Temperature 175°C
•Avalanche Rated 55 mJ
•High Surge Current Capacity
•Positive Temperature Coefficient
•Ease of Paralleling
•No Reverse Recovery/No Forward Recovery
Applications
•General Purpose
•SMPS, Solar Inverter, UPS
•Power Switching Circuits
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TO−247−3LD
CASE 340CH
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
Schottky Diode
MARKING DIAGRAM
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FFSH10120ADN = Specific Device Code
1. Cathode/
Case
3. Anode1. Anode
1
3
2
$Y&Z&3&K
FFSH
10120ADN
FFSH10120ADN−F155
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2
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) (per leg)
Symbol Parameter Value Unit
VRRM Peak Repetitive Reverse Voltage 1200 V
EAS Single Pulse Avalanche Energy (Note 1) 55 mJ
IFContinuous Rectified Forward Current @ TC < 157°C5* / 10** A
Continuous Rectified Forward Current @ TC < 135°C8.1* / 16.2** A
IF, Max Non-Repetitive Peak Forward Surge Current TC = 25°C, 10 ms380 A
TC = 150°C, 10 ms330 A
IF,SM Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 42 A
IF,RM Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 21 A
Ptot Power Dissipation TC = 25°C 83 W
TC = 150°C 14 W
TJ, TSTG Operating and Storage Temperature Range −55 to +175 °C
TO−247 Mounting Torque, M3 Screw 60 Ncm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
NOTE: * Per leg, ** Per Device
1. EAS of 55 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 15 A, V = 50 V.
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
RqJC Thermal Resistance, Junction to Case, Max 1.8*/ 0.91** °C/W
NOTE: * Per leg, ** Per Device
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (per leg)
Symbol Parameter Test Condition Min Typ Max Unit
VFForward Voltage IF = 5 A, TC = 25°C−1.45 1.75 V
IF = 5 A, TC = 125°C−1.7 2.0
IF = 5 A, TC = 175°C−2.0 2.4
IRReverse Current VR = 1200 V, TC = 25°C− − 200 mA
VR = 1200 V, TC = 125°C− − 300
VR = 1200 V, TC = 175°C− − 400
QCTotal Capacitive Charge V = 800 V −37 −nC
CTotal Capacitance VR = 1 V, f = 100 kHz −337 −pF
VR = 400 V, f = 100 kHz −33 −
VR = 800 V, f = 100 kHz −26 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number Top Marking Package Shipping
FFSH10120ADN−F155 FFSH10120ADN TO−247−3LD 30 Units / Tube
FFSH10120ADN−F155
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3
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted) (per leg)
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
Figure 3. Current Derating Figure 4. Power Derating
Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage
0
2
4
6
8
10
TJ = 175 oC
TJ = 125 oC
TJ = 75 oC
TJ = 25 oC
TJ = −55oC
IF, FORWARD CURRENT (A)
VF, FORWARD VOLTAGE (V)
10−3
10−2
10−1
100
101
IR, REVERSE CURRENT (mA)
VR, REVERSE VOLTAGE (V)
TJ = 175 oC
TJ = 125 oC
TJ = −55oC
TJ = 25 oC
TJ = 75 oC
25 50 75 100 125 150 175
0
20
40
60
80
100
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7 D = 1
IF, PEAK FORWARD CURRENT (A)
, CASE TEMPERATURE (
25 50 75 100 125 150 175
0
20
40
60
80
100
PTOT, POWER DISSIPATION (W)
TC, CASE TEMPERATURE (o
C)
0.0 0.5 1.0 1.5 2.0 2.5 3.0
10
100
1000
CAPACITANCE (pF)
VR, REVERSE VOLTAGE (V)
0 200 400 600 800 1000
0
10
20
30
40
50
QC, CAPACITIVE CHARGE (nC)
VR, REVERSE VOLTAGE (V)
TC
oC)
200 400 600 800 1000 1200
0.1 1 10 100 1000
FFSH10120ADN−F155
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4
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Figure 7. Capacitance Stored Energy
Figure 8. Junction-to-Case Transient Thermal Response Curve
0
5
10
15
EC, CAPACITIVE ENERGY ( mJ)
VR, REVERSE VOLTAGE (V)
10−610−510−410−310−210−11
10−4
10−3
10−2
10−1
1DUTY CYCLE−DESCENDING ORDER
SINGLE PULSE
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
D=0.5
2
NORMALIZED THERMAL
IMPEDANCE, ZqJC
t, RECTANGULAR PULSE DURATION (sec)
PDM
t1
t2
qJC(t) = r(t) x RqJC
RqJC = 1.8 oC/W
Duty Cycle, D = t1 / t2
Peak TJ = PDM x ZqJC(t) + TC
Z
0 200 400 600 800 1000
TO−247−3LD
CASE 340CH
ISSUE O DATE 31 OCT 201
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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1
© Semiconductor Components Industries, LLC, 2002
October, 2002 − Rev. 0 Case Outline Number:
XXX
DOCUMENT NUMBER:
STATUS:
NEW STANDARD:
DESCRIPTION:
98AON13853G
ON SEMICONDUCTOR STANDARD
TO−247−3LD
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
PAGE 1 OF 2
DOCUMENT NUMBER:
98AON13853G
PAGE 2 OF 2
ISSUE REVISION DATE
ORELEASED FOR PRODUCTION FROM FAIRCHILD TO247G03 TO ON SEMICON-
DUCTOR. REQ. BY J. LETTERMAN. 31 OCT 2016
© Semiconductor Components Industries, LLC, 2016
October, 2016 − Rev. O Case Outline Number
:
340CH
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