Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 6
1Publication Order Number:
MMSD103T1/D
MMSD103T1G,
SMMSD103T1G
High Voltage Switching
Diode
Features
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage VR250 V
Peak Forward Current IF200 mA
Peak Forward Surge Current IFM(surge) 625 mA
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Forward Power Dissipation, FR−5 Board
(Note 1) @ TA = 25C
Derate above 25C
PF400
3.2
mW
mW/C
Thermal Resistance,
Junction−to−Case
RJL 174
C/W
Thermal Resistance,
Junction−to−Ambient
RJA 492
C/W
Junction and Storage
Temperature Range
TJ, Tstg −55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping†
ORDERING INFORMATION
1
Cathode
2
Anode
http://onsemi.com
MMSD103T1G SOD−123
(Pb−Free)
3,000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOD−123
CASE 425
STYLE 1
JS = Device Code
M = Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
1JS M G
G
MARKING DIAGRAM
SMMSD103T1G SOD−123
(Pb−Free)
3,000 / Tape & Reel
MMSD103T1G, SMMSD103T1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 V)
(VR = 200 V, TJ = 150C)
IR
−
−
1.0
100
A
Reverse Breakdown Voltage
(IBR = 100 A)
V(BR) 250 −
V
Forward Voltage
(IF = 100 mA)
(IF = 200 mA)
VF
−
−
1000
1250
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
−5.0
pF
Reverse Recovery Time
(IF = IR = 30 mA, RL = 100 )
trr
−50
ns
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
+10 V 2.0 k
820
0.1 F
D.U.T.
VR
100 H
0.1 F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
IR(REC) = 3.0 mA
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at IR(REC) = 3.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
MMSD103T1G, SMMSD103T1G
http://onsemi.com
3
Figure 2. Forward Voltage Figure 3. Reverse Leakage
7000
REVERSE VOLTAGE (V)
5000
3000
5
0
21
6000
4000
6
5 10 20 50 100 200
1
2
3
4
300
TA = 150C
TA = 25C
TA = −55C
REVERSE CURRENT (nA)
FORWARD CURRENT (mA)
TA = −55C
1 10 100 1000
1
200
400
600
800
1000
1200
FORWARD VOLTAGE (mV)
150C
25C
Figure 4. Diode Capacitance
VR, REVERSE VOLTAGE (V)
6543210
0.3
0.35
0.4
0.45
0.5
0.55
0.6
0.65
Cd, DIODE CAPACITANCE (pF)
87109
0.7
0.75
MMSD103T1G, SMMSD103T1G
http://onsemi.com
4
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
ÂÂÂÂ
ÂÂÂÂ
E
b
DA
L
C
1
2
A1
DIM MIN NOM MAX
MILLIMETERS INCHES
A0.94 1.17 1.35 0.037
A1 0.00 0.05 0.10 0.000
b0.51 0.61 0.71 0.020
c
1.60
0.15
0.055D1.40 1.80
E2.54 2.69 2.84 0.100
---
3.68 0.140
L0.25
3.86
0.010
HE
0.046
0.002
0.024
0.063
0.106
0.145
0.053
0.004
0.028
0.071
0.112
0.152
MIN NOM MAX
3.56
HE
---
--- ---
0.006
--- ---
--- ---
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. CATHODE
2. ANODE
1.22
0.048
ÉÉ
ÉÉ
ÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ǒmm
inchesǓ
SCALE 10:1
ÉÉ
ÉÉ
ÉÉ
q
--- ---
q00
10 10
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MMSD103T1/D
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