MMSD103T1G, SMMSD103T1G High Voltage Switching Diode Features http://onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SOD-123 CASE 425 STYLE 1 MAXIMUM RATINGS Symbol Value Unit Continuous Reverse Voltage Rating VR 250 V Peak Forward Current IF 200 mA IFM(surge) 625 mA Characteristic Symbol Value Unit Forward Power Dissipation, FR-5 Board (Note 1) @ TA = 25C Derate above 25C PF 400 3.2 mW mW/C Peak Forward Surge Current 1 Cathode 2 Anode MARKING DIAGRAM THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case RJL Thermal Resistance, Junction-to-Ambient RJA Junction and Storage Temperature Range TJ, Tstg 174 492 -55 to +150 1 JS M G G C/W JS = Device Code M = Date Code G = Pb-Free Package C/W (Note: Microdot may be in either location) C ORDERING INFORMATION Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 0.75 0.062 in. Device Package Shipping MMSD103T1G SOD-123 3,000 / Tape & Reel (Pb-Free) SMMSD103T1G SOD-123 3,000 / Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 November, 2011 - Rev. 6 1 Publication Order Number: MMSD103T1/D MMSD103T1G, SMMSD103T1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max - - 1.0 100 250 - - - 1000 1250 - 5.0 - 50 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 V) (VR = 200 V, TJ = 150C) IR Reverse Breakdown Voltage (IBR = 100 A) V(BR) Forward Voltage (IF = 100 mA) (IF = 200 mA) VF Diode Capacitance (VR = 0, f = 1.0 MHz) CD Reverse Recovery Time (IF = IR = 30 mA, RL = 100 ) trr A V mV pF ns 820 +10 V 2.0 k 100 H tr 0.1 F IF tp t IF trr 10% t 0.1 F 90% D.U.T. 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE IR(REC) = 3.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 30 mA; MEASURED at IR(REC) = 3.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 MMSD103T1G, SMMSD103T1G TA = -55C 1000 800 REVERSE CURRENT (nA) 25C 150C 600 400 200 1 1 10 100 7000 6000 5000 4000 3000 6 5 4 3 2 1 0 1000 TA = 150C TA = 25C TA = -55C 1 2 5 10 20 50 FORWARD CURRENT (mA) REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage 0.75 Cd, DIODE CAPACITANCE (pF) FORWARD VOLTAGE (mV) 1200 0.7 0.65 0.6 0.55 0.5 0.45 0.4 0.35 0.3 0 1 2 3 4 5 6 7 8 VR, REVERSE VOLTAGE (V) Figure 4. Diode Capacitance http://onsemi.com 3 9 10 100 200 300 MMSD103T1G, SMMSD103T1G PACKAGE DIMENSIONS SOD-123 CASE 425-04 ISSUE G D AAAA AAAA A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A1 1 HE DIM A A1 b c D E HE L q E 2 q MIN 0.037 0.000 0.020 --0.055 0.100 0.140 0.010 0 INCHES NOM 0.046 0.002 0.024 --0.063 0.106 0.145 ----- MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 --10 STYLE 1: PIN 1. CATHODE 2. ANODE L b MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 ----0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 ----0.25 --10 0 C SOLDERING FOOTPRINT* EE EE EE 0.91 0.036 2.36 0.093 4.19 0.165 EE EE EE SCALE 10:1 1.22 0.048 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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