NJG1106KB2
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800MHz BAND LOW NOISE AMPLIFIER GaAs MMIC
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GENERAL DESCRIPTION
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PACKAGE OUTLINE
NJG1106KB2 is a low noise amplifier GaAs MMIC
designed for 800MHz band cellular phone handsets.
This amplifier provides low noise figure of 1.3dB and
low current consumption of 3mA at low supply voltage
of 2.7V.
NJG1106KB2 includes internal self-bias circuit and
input DC blocking capacitor in a ultra small and ultra
thin package of FLP6-B2.
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FEATURES
lLow voltage operation +2.7V typ.
lLow current consumption 2.5mA typ.
lSmall signal gain 17dB typ. @f=820MHz
lLow noise figure 1.3dB typ. @f=820MHz
lHigh Input IP3 -4dBm typ. @f=820.0+820.1MHz
lHigh Output IP3 +13dBm typ. @f=820+820.1MHz
lUltra small & ultra thin package FLP6-B2 (Mount Size: 2.1x2.0x0.75mm)
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PIN CONFIGURATION
Note: Specifications and description listed in this catalog are subject to change without prior notice.
NJG1106KB2
PIN CONNECTION
1.RFout
2.GND
3.EXTCAP
4.GND
5.GND
6.RFin
KB2 Type
(Top View)
Package orientation mark
AMP
1
2
3
6
5
4
NJG1106KB2
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ABSOLUTE MAXIMUM RATINGS (Ta=+25°C, Zs=Zl=50Ω)
PARAMETER SYMBOL CONDITIONS RATINGS UNITS
Drain Voltage VDD 6.0 V
Input Power Pin VDD=2.7V+15 dBm
Power Dissipation PDTj=125°C, mount on PCB
FR4 20X20X0.2mm 450 mW
Operating Temp. Topr -40 ~ +85 °C
Storage Temp. Tstg -55 ~ +125 °C
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ELECTRICAL CHARACTERISTICS (VDD=2.7V, f=820MHz, Ta=+25°C, Zs=Zl=50Ω)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating frequency freq 800 820 1000 MHz
Drain voltage VDD 2.5 2.7 5.5 V
Operating current IDD RF OFF -2.5 3.4 mA
Small signal gain Gain 15.0 17.0 19.0 dB
Gain flatness Gflat f=810~885MHz -0.5 1.0 dB
Noise figure NF -1.3 1.5 dB
Pout at 1dB gain
compression point P-1dB V
DD
=2.7V, f=820MHz -4.0 0.0 -dBm
Input 3rd order
Intercept point IIP3 f=820.0+820.1MHz -8.0 -4.0 -dBm
Output 3rd order
Intercept point OIP3 f=820.0+820.1MHz +9.0 +13.0 -dBm
RF Input port
VSWR VSWRiV
DD
=2.7V, f=820MHz -1.5 2.0
RF Output port
VSWR VSWRoV
DD
=2.7V, f=820MHz -1.5 2.0
NJG1106KB2
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TERMINAL INFORMATION
Pin Function Description
1RFout
RF output and voltage supply pin. External matching circuits and a bypass
capacitor is required. L4 is a RF choke inductor and C1 is a DC blocking
capacitor. These elements are used as output matching circuit. C2 is a bypass
capacitor. (Please refer to “RECOMMENDED CIRCUIT”)
2,4,5 GND Ground pin. To keep good RF grounding performance, please use multiple via
holes to connect with ground plane and this pin.
3EXTCAP An external bypass capacitor is required. (Please refer to “RECOMMENDED
CIRCUIT”)
6RFin RF input pin. A DC blocking capacitor is not required. An external matching circuit
is required. (Please refer to “RECOMMENDED CIRCUIT”)
NJG1106KB2
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TYPICAL CHARACTERISTICS
-25
-20
-15
-10
-5
0
5
10
15
20
25
-50
-40
-30
-20
-10
0
10
20
30
40
50
0500 1000 1500 2000
NJG1106KB2 S11,S21,S12,S22 vs. freq
S11, S21, S22 (dB)
S12 (dB)
freq (MHz)
VDD=2.7V, IDD=2.9mA, Ta=25 oC
S11
S21
S22
S12
0
5
10
15
20
1.0
1.5
2.0
2.5
3.0
700 750 800 850 900 950 1000
NJG1106KB2 S21,NF vs. freq
Gain (dB)
NF (dB)
freq (MHz)
VDD=2.7V, IDD=2.9mA, Ta=25 oC
Gain
NF
Equations of OIP3 and IIP3
23IM-Pout×3
=3OIP
Gain-3OIP=3IIP @ Pin=-40dBm
-100
-80
-60
-40
-20
0
20
-45 -40 -35 -30 -25 -20 -15 -10 -5
NJG1106KB2 Pout,IM3 vs. Pin
Pout (dBm)
Pin (dBm)
VDD=2.7V, IDD=2.9mA, Freq=820+820.1MHz, Ta=25 oC
OIP3=+13.7dBm
IIP3=-4.1dBm
Pout
IM3
-25
-20
-15
-10
-5
0
5
5.0
10
15
20
-45 -40 -35 -30 -25 -20 -15 -10 -5
NJG1106KB2 Pout,Gain vs. Pin
Pout (dBm)
Gain (dB)
Pin (dBm)
VDD=2.7V, IDD=2.9mA, Freq=820MHz, Ta=25 oC
P-1dB=-0.5dBm
Pout
Gain
NJG1106KB2
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TYPICAL CHARACTERISTICS
Equations of OIP3 and IIP3
23IM-Pout×3
=3OIP
Gain-3OIP=3IIP @ Pin=-40dBm
10
12
14
16
18
20
-10
-8
-6
-4
-2
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
NJG1106KB2 OIP3,IIP3 vs. VDD
OIP3(dBm)
IIP3 (dBm)
VDD (V)
Freq=820+820.1MHz, Ta=25oC
OIP3
IIP3
2.7
2.8
2.9
3.0
3.1
3.2
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
NJG1106KB2 IDD vs. VDD
IDD (mA)
VDD (V)
Freq=820MHz,Ta=25oC
10
12
14
16
18
20
-10
-8
-6
-4
-2
0
800 820 840 860 880 900
NJG1106KB2 OIP3,IIP3 vs. Freq
OIP3 (dBm)
IIP3 (dBm)
freq (MHz)
VDD=2.7V, IDD=3mA, Freq=820+820.1MHz, Ta=25 oC
OIP3
IIP3
17.0
17.2
17.4
17.6
17.8
18.0
1.0
1.2
1.4
1.6
1.8
2.0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
NJG1106KB2 Gain,NF vs. VDD
Gain (dB)
NF (dB)
VDD (V)
Freq=820MHz,Ta=25oC
Gain
NF
NJG1106KB2
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TYPICAL CHARACTERISTICS
Equations of OIP3 and IIP3
23IM-Pout×3
=3OIP
Gain-3OIP=3IIP @ Pin=-40dBm
2.0
2.5
3.0
3.5
4.0
-50 050 100
NJG1106KB2 IDD vs. Ta
IDD (mA)
Ta (oC)
VDD=2.7V,Freq=820MHz
10
12
14
16
18
20
-10
-8
-6
-4
-2
0
-50 050 100
NJG1106KB2 OIP3,IIP3 vs. Ta
OIP3 (dBm)
IIP3 (dBm)
Ta (oC)
VDD=2.7V,Freq=820+820.1MHz
IIP3
OIP3
10
12
14
16
18
20
0.0
1.0
2.0
3.0
4.0
5.0
-50 050 100
NJG1106KB2 Gain,NF vs. Ta
Gain (dB)
NF (dB)
Ta (oC)
VDD=2.7V,Freq=820MHz
Gain
NF
NJG1106KB2
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TYPICAL CHARACTERISTICS
-25
-20
-15
-10
-5
0
5
10
15
20
25
0 5 10 15 20
NJG1106KB2 S11 vs. Freq(to 20GHz)
S11 (dB)
Freq (GHz)
VDD=2.7V, IDD=2.9mA, Ta=25 oC
-25
-20
-15
-10
-5
0
5
10
15
20
25
0 5 10 15 20
NJG1106KB2 S22 vs. Freq(to 20GHz)
S22 (dB)
Freq (GHz)
VDD=2.7V, IDD=2.9mA, Ta=25 oC
-50
-40
-30
-20
-10
0
10
20
30
40
50
0 5 10 15 20
NJG1106KB2 S12 vs. Freq(to 20GHz)
S12 (dB)
Freq (GHz)
VDD=2.7V, IDD=2.9mA, Ta=25 oC
-25
-20
-15
-10
-5
0
5
10
15
20
25
0 5 10 15 20
NJG1106KB2 S21 vs. Freq(to 20GHz)
S21 (dB)
Freq (GHz)
VDD=2.7V, IDD=2.9mA, Ta=25 oC
NJG1106KB2
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TYPICAL CHARACTERISTICS
Scattering Parameter Table
VDD=2.7V, IDD=2.9mA, Zo=50Ω
S11 S21 S12 S22
Freq
(MHz)mag
(units)ang
(deg) mag
(units) ang
(deg) mag
(units) ang
(deg) mag
(units) ang
(deg)
100 0.996 -1.8 1.298 -142.2 0.005 70.0 0.967 -2.3
200 0.995 -4.8 1.846 -164.1 0.003 -6.6 0.953 -3.7
300 0.993 -7.2 2.029 179.1 0.006 38.5 0.942 -4.9
400 0.982 -9.6 2.056 165.7 0.006 36.0 0.939 -6.1
500 0.964 -11.7 2.029 155.1 0.007 47.8 0.931 -7.3
600 0.947 -13.9 1.964 145.6 0.006 54.7 0.928 -8.5
700 0.930 -15.5 1.892 137.5 0.008 55.8 0.918 -9.7
800 0.914 -17.3 1.816 130.0 0.008 60.4 0.916 -10.9
900 0.897 -18.7 1.733 123.2 0.009 62.5 0.906 -12.2
1000 0.884 -20.2 1.659 117.0 0.009 61.0 0.903 -13.4
1100 0.874 -21.5 1.582 111.1 0.010 69.4 0.898 -14.7
1200 0.860 -22.6 1.513 105.8 0.011 70.7 0.893 -16.1
1300 0.851 -23.8 1.449 100.7 0.012 72.6 0.886 -17.3
1400 0.838 -24.9 1.385 96.1 0.012 80.1 0.883 -18.9
1500 0.831 -26.1 1.330 91.4 0.014 77.4 0.878 -20.0
1600 0.822 -27.0 1.279 87.0 0.014 84.4 0.874 -21.3
1700 0.815 -28.2 1.235 83.0 0.016 85.1 0.871 -22.7
1800 0.809 -29.7 1.194 78.9 0.017 90.7 0.869 -24.1
1900 0.803 -30.6 1.153 75.2 0.018 87.7 0.865 -25.4
2000 0.796 -31.8 1.120 71.8 0.019 91.9 0.864 -26.8
NoteVDD (=2.8V) is supplied through “BIAS CONNECT (PORT2)” of Network Analyzer.
AMP
1
2
3
6
5
4
Reference Plane
Network Analyzer
Port2
Network Analyzer
Port1
1000pF
NJG1106KB2
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RECOMMENDED CIRCUIT (f=810~885MHz)
( Top View )
RF InputL2
L1
RF Output
VDD=2.7V
C1
C2
L3
L4
C3
AMP
1
2
3
6
5
4
NJG1106KB2
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RECOMMENDED PCB DESIGN
(Top View)
NOTES:
1. Please use L1 to stabilize amplifier. This element pull input impedance down at low
frequency region (up to 400MHz).
2. Please use chip inductor which has low resistance at input circuit. (A low resistance inductor
of 1608 size (1.6mm x 0.8mm) is used in the circuit example above.) Because any losses at
input circuit cause NF degradation.
3. The capacitor C3 is a bypass capacitor connected with self-biasing resistor. The small signal
gain can be controlled by this capacitor. (Gain=18.5dB @ C3=30pF)
Parts ID Constant Comment
L1 82nH TAIYO-YUDEN HK1005 Series
L2 33nH TAIYO-YUDEN HK1608 Series
L3 39nH TAIYO-YUDEN HK1005 Series
L4 12nH TAIYO-YUDEN HK1005 Series
C1 4pF MURATA GRM36 Series
C2, C3 1000pF MURATA GRM36 Series
PCB SIZE: 14.0x14.0mm
PCB: FR4, t=0.2mm
MICROSTRIP LINE WIDTH=0.4mm(Zo=50Ω)
L1 L2 L3L4C1
C2
C3
NJG1106
RF IN
RF OUT
Parts List (f=810~885MHz)
NJG1106KB2
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PACKAGE OUTLINE (FLP6-B2)
Lead material : Copper
Lead surface finish : Solder plating
Molding material : Epoxy resin
UNIT : mm
Weight : 6.5mg
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this product, please obey the relating law of your country.
This product may be damaged with electric static discharge (ESD) or spike voltage. P
lease
handle with care to avoid these damages.
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
2.0±0.1
654
123
0.20.2
2.1±0.1
1.7±0.1
0.65 0.65
0.75±0.05 +0.1
0.2-0.05
+0.1
0.1 0.1
0.15-0.05
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Authorized Distributor
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