1
Infrared Light Emitting Diodes
2.8±0.2
3.2±0.3
0.5±0.1
0.15
45˚
12
10.0 min.
Type number : Cathode mark (Red)
10.0 min.
3.2±0.3
1.8 1.8
(0.7)
(0.7)
0.4±0.1
2.2±0.15
2.8±0.2
1.05±0.10.85 ± 0.15
R0.9
ø1.8
1: Cathode
2: Anode
Unit : mm
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Radiant power POIF = 50mA 3 4.5 mW
Peak emission wavelength λPIF = 50mA 950 nm
Spectral half band width ∆λ IF = 50mA 50 nm
Forward voltage (DC) VFIF = 50mA 1.25 1.5 V
Reverse current (DC) IRVR = 3V 10 µA
Capacitance between pins
CtVR = 0V, f = 1MHz 35 pF
Half-power angle θ
The angle in which radiant intencity is 50%
18 deg.
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Power dissipation PD75 mW
Forward current (DC) IF50 mA
Pulse forward current IFP*1A
Reverse voltage (DC) VR3V
Operating ambient temperature
Topr –25 to +85 ˚C
Storage temperature Tstg –30 to +100 ˚C
* f = 100 Hz, Duty cycle = 0.1 %
LNA2W01L
GaAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency : PO = 4.5 mW (typ.)
Emitted light spectrum suited for silicon photodetectors
Infrared light emission close to monochromatic light :
λ
P
= 950 nm (typ.)
Narrow directivity : θ = 18 deg. (typ.)
Ultra-miniature double ended package
2
LNA2W01L Infrared Light Emitting Diodes
I
F
— Ta
60
50
40
30
20
10
Ambient temperature Ta (˚C )
Allowable forward current I
F
(mA)
0 20406080100
0
– 25
I
FP
— Duty cycle
10
2
10
1
10
–1
10
–2
Duty cycle (%)
Pulse forward current I
FP
(A)
10
–1
10 10
2
1
10
–3
10
–2
Ta = 25˚C
I
F
— V
F
80
70
60
50
40
20
10
30
0
Forward voltage V
F
(V)
Ta = 25˚C
Forward current I
F
(mA)
0 0.4 0.8 1.2 1.6
I
FP
— V
F
10
4
10
3
10
2
10
1
Forward voltage V
F
(V)
Pulse forward current I
FP
(mA)
10
–1
0
t
w
= 10µs
Duty Cycle = 0.1%
Ta = 25˚C
13524
Ta = 25˚C
∆P
O
— I
F
120
80
40
100
60
20
Forward current I
F
(mA)
Relative radiant power ∆P
O
10 20 30 40 50 60
00
∆P
O
— Ta
10
1
Ambient temperature Ta (˚C )
Relative radiant power ∆P
O
– 40 0 40 80 120
I
F
= 50mA
10
2
10
3
λ
P
— Ta
1000
980
960
940
920
900
Ambient temperature Ta (˚C )
I
F
= 50mA
Peak emission wavelength λ
P
(nm)
– 40 0 40 80 120
∆P
O
— I
FP
10
3
10
2
10
1
Pulse forward current I
FP
(mA)
Relative radiant power ∆P
O
10
3
10
4
10
2
10
–1
10
t
w
= 10µs
(1) f = 100Hz
(2) f = 21kHz
(3) f = 42kHz
(4) f = 60kHz
Ta = 25˚C
V
F
— Ta
1.6
1.2
0.8
0.4
0
Ambient temperature Ta (˚C )
Forward voltage V
F
(V)
– 40 0 40 80 120
(1)
(2)
(3)(4)
I
F
= 50mA
10mA
1mA
3
Infrared Light Emitting Diodes LNA2W01L
Spectral characteristics
100
80
60
40
20
Wavelength λ (nm)
Relative radiant intensity (%)
900 940 980 1020 1060 1100
0
860
I
F
= 50mA
Ta = 25˚C
Frequency characteristics
10
2
10
1
10
–1
Frequency f (kHz)
Modulation output
10
2
10
3
10
10
–2
1
Ta = 25˚C
0˚ 10˚ 20˚
30˚
40˚
50˚
60˚
70˚
80˚
90˚
Directivity characteristics
20
90
100
80
70
60
50
40
30
Relative radiant intensity(%)
