September 2001
2001 Fairchild Semiconductor Corporation FDN338P Rev F(W)
FDN338P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
• Battery protection
Features
• –1.6 A, –20 V. RDS(ON) = 115 mΩ @ VGS = –4.5 V
RDS(ON) = 155 mΩ @ VGS = –2.5 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• SuperSOTTM
-3 provides low RDS(ON) and 30% higher
power handling capability than SOT23 in the same
footprint
G
D
S
SuperSOT -3
TM
D
S
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage –20 V
VGSS Gate-Source Voltage ±8 V
ID Drain Current – Continuous –1.6 A
– Pulsed –5
Maximum Power Dissipation (Note 1a) 0.5 PD (Note 1b) 0.46 W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.338 FDN338P 7’’ 8mm 3000 units
FDN338P
FDN338P Rev F(W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250 µA –20 V
∆BVDSS
∆TJ Breakdown Voltage Temperature
Coefficient ID = –250 µA, Referenced to 25°C –16 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA
IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
IGSSR Gate–Body Leakage, Reverse VGS = –8 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.4 –0.8 –1.5 V
∆VGS(th)
∆TJ Gate Threshold Voltage
Temperature Coefficient ID = –250 µA, Referenced to 25°C
2.7 mV/°C
RDS(on) Static Drain–Source
On–Resistance VGS = –4.5 V, ID = –1.6 A
VGS = –2.5 V, ID = –1.3 A
VGS = –4.5 V, ID = –1.6 A, TJ=125°C
88
117
116
115
155
165
mΩ
ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V –5 A
gFS Forward Transconductance VDS = –5 V, ID = –1.6 A 6 S
Dynamic Characteristics
Ciss Input Capacitance 451 pF
Coss Output Capacitance 75 pF
Crss Reverse Transfer Capacitance
VDS = –10 V, V GS = 0 V,
f = 1.0 MHz 33 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 10 20 ns
tr Turn–On Rise Time 11 20 ns
td(off) Turn–Off Delay Time 16 29 ns
tf Turn–Off Fall Time
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6 Ω
6.5 13 ns
Qg Total Gate Charge 4.4 6.2 nC
Qgs Gate–Source Charge 1.1 nC
Qgd Gate–Drain Charge
VDS = –10 V, ID = –1.6 A,
VGS = –4.5 V
0.7 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –0.42 A
VSD Drain–Source Diode Forward
Voltage VGS = 0 V, IS = –0.42 (Note 2) –0.7 –1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 250°C/W when mounted on a
0.02 in2 pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDN338P Rev F(W)
Typical Characteristics
0
1
2
3
4
5
00.5 11.5 2
-V DS, DRAIN-SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
-2.0V
-2.5V
VGS = -4.5V
-3.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0 1 2 3 4 5
-ID
, DRAIN CURRENT (A)
RDS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = -2.0V
-2.5V
-4.5V
-3.0V -3.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
TJ
, JUNCTION TEMPERATURE (oC)
RDS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID = -1.6A
VGS
= -4.5V
0.06
0.1
0.14
0.18
0.22
0.26
0.3
0.34
12345
-VGS, GATE TO SOURCE VOLTAGE (V)
RDS(ON)
, ON-RESISTANCE (OHM)
ID = -0.8 A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation with
Temperature. Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
1
2
3
4
5
0.5 0.75 11.25 1.5 1.75 22.25
-VGS, GATE TO SOURCE VOLTAGE (V)
-ID
, DRAIN CURRENT (A)
TA = -55oC25oC
VDS = - 5V
125oC
0.0001
0.001
0.01
0.1
1
10
00.2 0.4 0.6 0.8 11.2
-V SD, BODY DIODE FORWARD VOLTAGE (V)
TA = 125oC
25oC
-55oC
VGS = 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN338P
FDN338P Rev F(W)
Typical Characteristics
0
1
2
3
4
5
0 1 2 3 4 5
Qg, GATE CHARGE (nC)
-VGS, GATE-SOURCE VOLTAGE (V)
ID = -1.6A VDS = -5V
-15V
-10V
0
100
200
300
400
500
600
0 2 4 6 8 10 12
-VDS , DRAIN TO SOURCE VOLTAGE (V)
CISS
CRSS
COSS
f = 1MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
0.1 1 10 100
-VDS , DRAIN-SOURCE VOLTAGE (V)
-ID
, DRAIN CURRENT (A)
DC 10s1s
100ms
RDS(ON) LIMIT
VGS =-4.5V
SINGLE PULSE
RθJA = 270oC/W
TA = 25oC
10ms 1ms
0
5
10
15
20
0.001 0.01 0.1 1 10 100 1000
t1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 270°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
RθJA(t) = r(t) + RθJA
RθJA = 270 °C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN338P
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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