UBA2033TS - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation 2002 Oct 08

INTEGRATED CIRCUITS

UBA2033

HF full bridge driver IC

2002 Oct 08 2

Philips Semiconductors Product speciﬁcation

HF full bridge driver IC UBA2033

FEATURES

•Full bridge driver circuit

•Integrated bootstrap diodes

•Integrated high voltage level shift function

•High voltage input for the internal supply voltage

•550 V maximum voltage

•Bridge disable function

•Input for start-up delay

•Adjustable oscillator frequency

•Predefined bridge position during start-up.

APPLICATIONS

•The UBA2033 can drive (via the MOSFETs) any kind of

load in a full bridge configuration

•The circuit is especially designed as a commutator for

High Intensity Discharge (HID) lamps.

GENERAL DESCRIPTION

The UBA2033 is a high voltage monolithic integrated

circuit made in the EZ-HV SOI process. The circuit is

designed for driving the MOSFETs in a full bridge

configuration. In addition, it features a disable function, an

internal adjustable oscillator and an external drive function

with a low-voltage level shifter for driving the bridge.

To guarantee an accurate 50% duty factor, the oscillator

signal can be passed through a divider before being fed to

the output driver.

ORDERING INFORMATION

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

UBA2033TS SSOP28 plastic shrink small outline package; 28 leads; body width 5.3 mm SOT341-1

2002 Oct 08 3

Philips Semiconductors Product speciﬁcation

HF full bridge driver IC UBA2033

BLOCK DIAGRAM

handbook, full pagewidth

MBL457

LOW VOLTAGE

LEVEL SHIFTER

OSCILLATOR

STABILIZER

UVLO

SGND

VDD

HIGH VOLTAGE

LEVEL SHIFTER

HIGHER LEFT

DRIVER

LOWER RIGHT

DRIVER

LOWER LEFT

DRIVER

HIGHER RIGHT

DRIVER

LOGIC SIGNAL

GENERATOR

LOGIC

1.29 V

213

EXTDR +LVS−LVS

4, 5, 7, 8, 18,

19, 22, 24, 25

n.c.

20 GLL

PGND

23 GLR

26 SHR

28 GHR

15 GHL

27 FSR

17 SHL

16 FSL

UBA2033TS

bridge disable

Fig.1 Block diagram.

2002 Oct 08 4

Philips Semiconductors Product speciﬁcation

HF full bridge driver IC UBA2033

PINNING

SYMBOL PIN DESCRIPTION

−LVS 1 negative supply voltage (for logic

input)

EXTDR 2 oscillator signal input

+LVS 3 positive supply voltage (for logic

input)

n.c. 4 not connected

n.c. 5 not connected

HV 6 high voltage supply input

n.c. 7 not connected

n.c. 8 not connected

VDD 9 internal low voltage supply

SU 10 input signal for start-up delay

DD 11 divider disable input

BD 12 bridge disable control input

RC 13 RC input for internal oscillator

SGND 14 signal ground

GHL 15 gate of higher left output MOSFET

FSL 16 ﬂoating supply voltage left

SHL 17 source of higher left MOSFET

n.c. 18 not connected

n.c. 19 not connected

GLL 20 gate of lower left output MOSFET

PGND 21 power ground

n.c. 22 not connected

GLR 23 gate of lower right output MOSFET

n.c. 24 not connected

n.c. 25 not connected

SHR 26 source of higher right MOSFET

FSR 27 ﬂoating supply voltage right

GHR 28 gate of higher right output MOSFET

handbook, halfpage

UBA2033TS

MBL458

EXTDR

n.c.

VDD

SGND

GHR

FSR

SHR

n.c.

GLR

n.c.

PGND

GLL

n.c.

SHL

FSL

GHL

+LVS

−LVS

Fig.2 Pin configuration.

2002 Oct 08 5

Philips Semiconductors Product speciﬁcation

HF full bridge driver IC UBA2033

FUNCTIONAL DESCRIPTION

Supply voltage

The UBA2033 is powered by a supply voltage applied to

pin HV, for instance the supply voltage of the full bridge.

The IC generates its own low supply voltage for the

internal circuitry. Therefore an additional low voltage

supply is not required. A capacitor has to be connected to

pin VDD to obtain a ripple-free internal supply voltage.

The circuit can also be powered by a low voltage supply

directly applied to pin VDD. In this case pin HV should be

connected to pin VDD or SGND.

Start-up

With an increasing supply voltage the IC enters the

start-upstate;thehigherpowertransistorsarekeptoffand

the lower power transistors are switched on. During the

start-upstatethebootstrapcapacitorsarechargedandthe

bridge output current is zero. The start-up state is defined

until VDD =V

DD(UVLO), where UVLO stands for Under

Voltage Lock-out. The state of the outputs during the

start-up phase is overruled by the bridge disable function.

Release of the power drive

At the moment the supply voltage on pin VDD or HV

exceeds the level of release power drive, the output

voltage of the bridge depends on the control signal on

pin EXTDR (see Table 1). The bridge position after

start-up, disable, or delayed start-up (via pin SU) depends

on the status of the pins DD and EXTDR. If pin DD = LOW

(divider enabled) the bridge will start in the pre-defined

position: pin GLR and pin GHL = HIGH and pin GLL and

pin GHR = LOW. If pin DD = HIGH (divider disabled) the

bridge position will depend on the status of pin EXTDR.

If the supply voltage on pin VDD or HV decreases and

dropsbelow theresetlevel of powerdrivethe IC entersthe

start-up state again.

Oscillation

At the point where the supply voltage on pin HV crosses

the level of release power drive, the bridge begins

commutating between the following two defined states:

•Higher left and lower right MOSFETs on,

higher right and lower left MOSFETs off

•Higher left and lower right MOSFETs off,

higher right and lower left MOSFETs on.

The oscillation can take place in three different modes:

•Internal oscillator mode.

In this mode the bridge commutating frequency is

determined by the values of an external resistor (Rosc)

and capacitor (Cosc). In this mode pin EXTDR must be

connectedto pin +LVS.To realizean accurate 50% duty

factor, the internal divider should be used. The internal

divider is enabled by connecting pin DD to SGND. Due

to the presence of the divider the bridge frequency

is half the oscillator frequency. The commutation of the

bridge will take place at the falling edge of the signal on

pin RC. To minimize the current consumption

pins +LVS, −LVS and EXTDR can be connected

together to either pin SGND or VDD. In this way the

current source in the logic voltage supply circuit is shut

off.

•External oscillator mode without the internal divider.

In the external oscillator mode the external source is

connectedtopin EXTDRandpin RCisshort-circuitedto

pin SGNDto disable the internal oscillator. If the internal

divider is disabled (pin DD = VDD) the duty factor of the

bridge output signal is determined by the external

oscillator signal and the bridge frequency equals the

external oscillator frequency.

•External oscillator mode with the internal divider.

The external oscillator mode can also be used with the

internal divider function enabled (pin RC and

pin DD = SGND). Due to the presence of the divider the

bridge frequency is half the external oscillator

frequency. The commutation of the bridge is triggered

by the falling edge of the EXTDR signal with respect to

V−LVS.

The design equation for the bridge oscillator frequency is:

Non-overlap time

The non-overlap time is the time between turning off the

conducting pair of MOSFETs and turning on the next pair.

The non-overlap time is internally fixed to a very small

value, which allows an HID system to operate with a very

small phase difference between load current and full

bridge voltage (pins SHL and SHR). Especially when

igniting an HID lamp via a LC resonance circuit, a small

‘dead time’ is essential. The high maximum operating

frequency,together with a small ‘dead time’, also gives the

opportunity to ignite the HID lamp at the third harmonic of

the full bridge voltage, thereby reducing costs in the

magnetic power components.

fbridge 1

kosc Rosc

×Cosc

×()

--------------------------------------------------

2002 Oct 08 6

Philips Semiconductors Product speciﬁcation

HF full bridge driver IC UBA2033

’Dead time’ can be increased by adding a resistor (for

slowly turning on the full bridge power FETs) and a diode

(for quickly turning off the full bridge power FETs) in

parallel, both in series with the gate drivers (see Fig.3).

Divider function

If pin DD = SGND, then the divider function is

enabled/present. If the divider function is present there is

no direct relation between the position of the bridge output

and the status of pin EXTDR.

Start-up delay

Normally,thecircuitstartsoscillatingassoonas pin VDD or

HV reaches the level of release power drive. At this

moment the gate drive voltage is equal to the voltage on

pin VDD for the low side transistors and VDD −0.6 V for the

high side transistors. If this voltage is too low for sufficient

drive of the MOSFETs the release of the power drive can

be delayed via pin SU.

A simple RC filter (R between pins VDD and SU;

C between pins SU and SGND) can be used to make a

delay, or a control signal from a processor can be used.

Bridge disable

Thebridgedisablefunction canbeused toswitchoff allthe

MOSFETs as soon as the voltage on pin BD exceeds the

bridge disable voltage (1.29 V). The bridge disable

function overrules all the other states.

Table 1 Logic table; note 1

Note

1. X = don’t care

a) BD, SU and DD logic levels are with respect to SGND

b) EXTDR logic levels are with respect to V−LVS

c) GHL logic levels are with respect to SHL

d) GHR logic levels are with respect to SHR

e) GLL and GLR logic levels are with respect to PGND

f) If pin DD = LOW the bridge enters the state (oscillation state and pin BD = LOW and pin SU = HIGH) in the

pre-defined position pin GHL and pin GLR = HIGH and pin GLL and pin GHR = LOW.

DEVICE

STATUS INPUTS OUTPUTS

BD SU DD EXTDR GHL GHR GLL GLR

Start-up state HIGH X X X LOW LOW LOW LOW

LOW X X X LOW LOW HIGH HIGH

Oscillation state HIGH X X X LOW LOW LOW LOW

LOW LOW X X LOW LOW HIGH HIGH

LOW HIGH HIGH HIGH LOW HIGH HIGH LOW

LOW HIGH LOW LOW HIGH

LOW HIGH LOW LOW HIGH LOW LOW HIGH

LOW-to-HIGH

HIGH

HIGH-to-LOW LOW HIGH HIGH LOW

2002 Oct 08 7

Philips Semiconductors Product speciﬁcation

HF full bridge driver IC UBA2033

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134); all voltages are measured with respect to

SGND; positive currents ﬂow into the IC.

Note

1. In accordance with the Human Body Model (HBM): equivalent to discharging a 100 pF capacitor through a 1.5 kΩ

series resistor.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VDD supply voltage (low voltage) DC value 0 14 V

transient at t < 0.1 µs 0 17 V

VHV supply voltage (high voltage) 0 550 V

VFSL ﬂoating supply voltage left VSHL =V

SHR = 550 V 0 564 V

VSHL =V

SHR = 0 V 0 14 V

VFSR ﬂoating supply voltage right VSHL =V

SHR = 550 V 0 564 V

VSHL =V

SHR = 0 V 0 14 V

VSHL source voltage for higher left

MOSFETs with respect to PGND and SGND −3 +550 V

with respect to SGND; t < 1 µs−14 −V

VSHR source voltage for higher right

MOSFETs with respect to PGND and SGND −3 +550 V

with respect to SGND; t < 1 µs−14 −V

VPGND power ground voltage with respect to SGND 0 5 V

V−LVS negative supply voltage for logic input −0.9 +17 V

I−LVS negative supply current for logic input pin EXTDR = HIGH −1−mA

V+LVS positive supply voltage for logic input VHV = 0 V; DC value 0 14 V

transient at t < 0.1 µs 0 17 V

Vi(EXTDR) input voltage from external oscillator

on pin EXTDR with respect to V−LVS 0V

+LVS V

Vi(RC) input voltage on pin RC DC value 0 VDD V

transient at t < 0.1 µs 0 17 V

Vi(SU) input voltage on pin SU DC value 0 VDD V

transient at t < 0.1 µs 0 17 V

Vi(BD) input voltage on pin BD DC value 0 VDD V

transient at t < 0.1 µs 0 17 V

Vi(DD) input voltage on pin DD DC value 0 VDD V

transient at t < 0.1 µs 0 17 V

SR slew rate at output pins repetitive 0 4 V/ns

Tjjunction temperature −40 +150 °C

Tamb ambient temperature −40 +150 °C

Tstg storage temperature −55 +150 °C

Vesd electrostatic discharge voltage on

pins HV, +LVS, −LVS, EXTDR, FSL,

GHL, SHL, SHR, GHR and FSR

note 1 −900 V

2002 Oct 08 8

Philips Semiconductors Product speciﬁcation

HF full bridge driver IC UBA2033

THERMAL CHARACTERISTICS

QUALITY SPECIFICATION

In accordance with

“SNW-FQ-611D”

CHARACTERISTICS

Tj=25°C; all voltages are measured with respect to SGND; positive currents ﬂow into the IC; unless otherwise

speciﬁed.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient in free air 100 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

High voltage

IHV high voltage supply current t < 0.5 s and VHV = 550 V 0 −30 µA

IFSL, IFSR high voltage ﬂoating supply

current t < 0.5 s and VFSL =V

FSR = 564 V 0 −30 µA

Start-up; powered via pin HV

Ii(HV) HV input current VHV = 11 V; note 1 −0.5 1.0 mA

VHV(rel) level of release power drive

voltage 11 12.5 14 V

VHV(UVLO) reset level of power drive voltage 8.5 10 11.5 V

VHV(hys) HV hysteresis voltage 2.0 2.5 3.0 V

VDD internal supply voltage VHV = 20 V 10.5 11.5 13.5 V

Start-up; powered via pin VDD

Ii(DD) VDD input current VDD = 8.25 V; note 2 −0.5 1.0 mA

VDD(rel) level of release power drive

voltage 8.25 9.0 9.75 V

VDD(UVLO) reset level of power drive voltage 5.75 6.5 7.25 V

VDD(hys) hysteresis voltage 2.0 2.5 3.0 V

Output stage

Ron(H) higher MOSFETs on resistance VFSR =V

FSL = 12 V (with respect

to SHR and SHL); Isource =50mA 15 21 26 Ω

Roff(H) higher MOSFETs off resistance VFSR =V

FSL = 12 V (with respect

to SHR and SHL); Isink =50mA 91418Ω

on(L) lower MOSFETs on resistance VDD =12V; I

source =50mA 15 21 26 Ω

off(L) lower MOSFETs off resistance VDD =12V; I

sink = 50 mA 9 14 18 Ω

Io(source) output source current VDD =V

FSL =V

FSR =12V;

GHR =V

GHL =V

GLR =V

GLL =0V 130 180 −mA

Io(sink) output sink current VDD =V

FSL =V

FSR =12V;

GHR =V

GHL =V

GLR =V

GLL =12V 150 200 −mA

Vdiode bootstrap diode voltage drop Idiode = 20 mA 1.7 2.1 2.5 V

tno non-overlap time −−250 ns

VFSL HS lockout voltage left 3.0 4.0 5.0 V

2002 Oct 08 9

Philips Semiconductors Product speciﬁcation

HF full bridge driver IC UBA2033

Notes

1. The current is specified without commutation of the bridge. The current into pin HV is limited by a thermal protection

circuit. The current is limited to 11 mA at Tj= 150 °C.

2. The current is specified without commutation of the bridge and pin HV is connected to VDD.

3. The minimum frequency is mainly determined by the value of the bootstrap capacitors.

VFSR HS lockout voltage right 3.0 4.0 5.0 V

IFSL FS supply current left VFSL =12V 2 4 6 µA

FSR FS supply current right VFSR =12V 246µA

DD input

VIH HIGH-level input voltage VDD =12V 6 −−V

IL LOW-level input voltage −−3V

i(DD) input current into pin DD −−1µA

SU input

VIH HIGH-level input voltage VDD =12V 4 −−V

IL LOW-level input voltage −−2V

i(SU) input current into pin SU −−1µA

External drive input

VIH HIGH-level input voltage with respect to V−LVS 4.0 −−V

IL LOW-level input voltage with respect to V−LVS −−1.0 V

Ii(EXTDR) input current into pin EXTDR −−1µA

bridge bridge frequency note 3 −−250 kHz

Low voltage logic supply

I+LVS low voltage supply current V+LVS =V

EXTDR = 5.75 to 14 V with

respect to V−LVS

−250 500 µA

V+LVS low voltage supply voltage with respect to V−LVS 5.75 −14 V

Bridge disable input

Vref(dis) disable reference voltage 1.23 1.29 1.35 V

Ii(BD) disable input current −−1µA

Internal oscillator

fbridge bridge oscillating frequency note 3 −−100 kHz

∆fosc(T) oscillator frequency variation

with temperature fbridge = 250 Hz and

Tamb =−40 to +150 °C−10 0 +10 %

∆fosc(VDD) oscillator frequency variation

with VDD

fbridge = 250 Hz and

VDD = 7.25 to 14 V −10 0 +10 %

kHhigh level trip point VRC(high) =k

H×V

DD 0.38 0.4 0.42

kLlow level trip point VRC(low) =k

L×V

DD −0.01 −

kosc oscillator constant fbridge = 250 Hz 0.94 1.02 1.10

Rext external resistor to VDD 100 −−kΩ

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

2002 Oct 08 10

Philips Semiconductors Product speciﬁcation

HF full bridge driver IC UBA2033

APPLICATION INFORMATION

Basic application

A basic full bridge configuration with an HID lamp is shown

in Fig.3. The bridge disable, the start-up delay and the

external drive functions are not used in this application.

The pins −LVS, +LVS, EXTDR and BD are short-circuited

to SGND. The internal oscillator is used and to realize a

50% duty cycle the internal divider function has to be used

by connecting pin DD to SGND. The IC is powered by the

high voltage supply. Because the internal oscillator is

used, the bridge commutating frequency is determined by

the values of Rosc and Cosc. The bridge starts oscillating

when the HV supply voltage exceeds the level of release

power drive (typically 12.5 V on pin HV). If the supply

voltage on pin HV drops below the reset level of power

drive (typically 10 V on pin HV), the UBA2033 enters the

start-up state.

handbook, full pagewidth

UBA2033TS

VDD

EXTDR

SGND

GHR

FSR

SHR

GLR R>100 Ω

R>100 Ω

GLL

SHL

FSL

GHL

PGND

IGNITOR

Rosc

Cosc

high voltage

550 V (max)

GND

MBL459

+LVS

−LVS

Fig.3 Basic configuration.

2002 Oct 08 11

Philips Semiconductors Product speciﬁcation

HF full bridge driver IC UBA2033

Application with external control

Figure 4 shows an application containing a system

ground-referenced control circuit. Pin +LVS can be

connected to the same supply as the external oscillator

controlunitandpin −LVSis connected to SGND. Pin RC is

short-circuited to SGND. The bridge commutation

frequency is determined by the external oscillator. The

bridge disable input (pin BD) can be used to immediately

turn off all four MOSFETs in the full bridge.

handbook, full pagewidth

UBA2033TS

VDD

EXTDR

SGND

GHR

FSR

SHR

GLR R>100 Ω

R>100 Ω

GLL

SHL

FSL

GHL

PGND

IGNITOR

high voltage

550 V (max)

GND

MBL460

EXTERNAL

OSCILLATOR

CONTROL

CIRCUIT

low voltage

+LVS

−LVS

Fig.4 External control configuration.

2002 Oct 08 12

Philips Semiconductors Product speciﬁcation

HF full bridge driver IC UBA2033

Additional application information

GATE RESISTORS

At ignition of an HID lamp, a large EMC spark occurs. This

can result in a large voltage transient or oscillation at the

gates of the full bridge MOSFETs (LL, LR, HR and HL).

When these gates are directly coupled to the gate drivers

(pins GHR, GLR, GHL and GLL), voltage overstress of the

driver outputs may occur. Therefore it is advised to add a

resistor with a minimum value of 100 Ωin series with each

gatedriver toisolatethe gatedriveroutputs from theactual

power MOSFETs gate.

’Dead time’ can also be adjusted via the combination gate

resistor and gate-source capacitance.

GATE CHARGE AND SUPPLY CURRENT AT HIGH FREQUENCY

USE

The total gate current needed to charge the gates of the

power MOSFETs equals:

Where:

Igate = gate current

fbridge = bridge frequency

Qgate = gate charge.

This current is supplied via the internal low voltage supply

(VDD). Since this current is limited to 11 mA (see

“Characteristics” table note 1), at higher frequencies and

with MOSFETs having a relative high gate charge, this

maximum VDD supply current may not be sufficient

anymore. As a result the internal low voltage supply (VDD)

andthegatedrive voltage will drop resulting in an increase

of the higher resistance (Ron) of the full bridge MOSFETs.

In this case an auxiliary low voltage supply is necessary.

Igate 4f

bridge Qgate

××=

2002 Oct 08 13

Philips Semiconductors Product speciﬁcation

HF full bridge driver IC UBA2033

PACKAGE OUTLINE

UNIT A1A2A3bpcD

(1) E(1) (1)

ELL

pQZywv θ

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.21

0.05 1.80

1.65 0.38

0.25 0.20

0.09 10.4

10.0 5.4

5.2 0.65 1.25

7.9

7.6 0.9

0.7 1.1

0.7 8

0.13 0.10.2

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

1.03

0.63

SOT341-1 MO-150 95-02-04

99-12-27

detail X

vMA

(A )

114

28 15

0.25

pin 1 index

0 2.5 5 mm

scale

SSOP28: plastic shrink small outline package; 28 leads; body width 5.3 mm SOT341-1

max.

2.0

2002 Oct 08 14

Philips Semiconductors Product speciﬁcation

HF full bridge driver IC UBA2033

SOLDERING

Introduction to soldering surface mount packages

Thistext givesavery brief insighttoa complextechnology.

A more in-depth account of soldering ICs can be found in

our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).

There is no soldering method that is ideal for all surface

mount IC packages. Wave soldering can still be used for

certainsurfacemountICs, butitis notsuitablefor finepitch

SMDs. In these situations reflow soldering is

recommended.

Reﬂow soldering

Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied

tothe printed-circuit board by screen printing, stencilling or

pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,

convection or convection/infrared heating in a conveyor

type oven. Throughput times (preheating, soldering and

cooling) vary between 100 and 200 seconds depending

on heating method.

Typical reflow peak temperatures range from

215 to 250 °C. The top-surface temperature of the

packages should preferable be kept below 220 °C for

thick/large packages, and below 235 °C for small/thin

packages.

Wave soldering

Conventional single wave soldering is not recommended

forsurfacemountdevices (SMDs)orprinted-circuit boards

with a high component density, as solder bridging and

non-wetting can present major problems.

To overcome these problems the double-wave soldering

method was specifically developed.

If wave soldering is used the following conditions must be

observed for optimal results:

•Use a double-wave soldering method comprising a

turbulent wave with high upward pressure followed by a

smooth laminar wave.

•For packages with leads on two sides and a pitch (e):

– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the

transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the

printed-circuit board.

The footprint must incorporate solder thieves at the

downstream end.

•Forpackageswithleads onfoursides, thefootprintmust

be placed at a 45°angle to the transport direction of the

printed-circuit board. The footprint must incorporate

solder thieves downstream and at the side corners.

During placement and before soldering, the package must

be fixed with a droplet of adhesive. The adhesive can be

applied by screen printing, pin transfer or syringe

dispensing. The package can be soldered after the

adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal

of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two

diagonally-opposite end leads. Use a low voltage (24 V or

less) soldering iron applied to the flat part of the lead.

Contact time must be limited to 10 seconds at up to

300 °C.

When using a dedicated tool, all other leads can be

soldered in one operation within 2 to 5 seconds between

270 and 320 °C.

2002 Oct 08 15

Philips Semiconductors Product speciﬁcation

HF full bridge driver IC UBA2033

Suitability of surface mount IC packages for wave and reﬂow soldering methods

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum

temperature (with respect to time) and body size of the package, there is a risk that internal or external package

cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the

Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

2. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder

cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,

the solder might be deposited on the heatsink surface.

3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.

The package footprint must incorporate solder thieves downstream and at the side corners.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;

it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is

definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

PACKAGE SOLDERING METHOD

WAVE REFLOW(1)

BGA, HBGA, LFBGA, SQFP, TFBGA not suitable suitable

HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, SMS not suitable(2) suitable

PLCC(3), SO, SOJ suitable suitable

LQFP, QFP, TQFP not recommended(3)(4) suitable

SSOP, TSSOP, VSO not recommended(5) suitable

2002 Oct 08 16

Philips Semiconductors Product speciﬁcation

HF full bridge driver IC UBA2033

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL DATA SHEET

STATUS(1) PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the

specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the specification without

notice, in order to improve the design and supply the best possible product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order to

improve the design, manufacturing and supply. Relevant changes will be

communicated via a Customer Product/Process Change Notification

(CPCN).

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

atthese or atanyotherconditions above thosegivenin the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuchapplicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorselling theseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

communicated via a Customer Product/Process Change

Notification (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these

products, conveys no licence or title under any patent,

makes no representations or warranties that these

products are free from patent, copyright, or mask work

right infringement, unless otherwise specified.

2002 Oct 08 17

Philips Semiconductors Product speciﬁcation

HF full bridge driver IC UBA2033

NOTES

2002 Oct 08 18

Philips Semiconductors Product speciﬁcation

HF full bridge driver IC UBA2033

NOTES

2002 Oct 08 19

Philips Semiconductors Product speciﬁcation

HF full bridge driver IC UBA2033

NOTES

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Philips Semiconductors – a worldwide company

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825

For sales ofﬁces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

Printed in The Netherlands 613502/01/pp20 Date of release: 2002 Oct 08 Document order number: 9397 750 09574