2N6546
2N6547
NPN SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6546, 2N6547
types are NPN Silicon Power Transistors designed for
high voltage, high current, applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL 2N6546 2N6547 UNITS
Collector-Emitter Voltage VCEV 650 850 V
Collector-Emitter Voltage VCEX 350 450 V
Collector-Emitter Voltage VCEO 300 400 V
Emitter-Base Voltage VEBO 9.0 V
Continuous Collector Current IC 15 A
Peak Collector Current ICM 30 A
Continuous Emitter Current IE 25 A
Peak Emitter Current IEM 50 A
Continuous Base Current IB 10 A
Peak Base Current IBM 20 A
Power Dissipation PD 175 W
Power Dissipation, TC=100°C PD 100 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance JC 1.0 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N6546 2N6547
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICEV V
CE=Rated VCEV, VBE=1.5V - 1.0 - 1.0 mA
ICEV V
CE=Rated VCEV, VBE=1.5V, TC=100°C - 4.0 - 4.0 mA
ICER V
CE=Rated VCEV, RBE=50Ω, TC=100°C - 5.0 - 5.0 mA
IEBO V
EB=9.0V - 1.0 - 1.0 mA
BVCEX V
CL=Rated VCEX, IC=8.0A, TC=100°C 350 - 450 - V
BVCEX V
CL=Rated VCEO-100V, IC=15A, TC=100°C 200 - 300 - V
BVCEO I
C=100mA 300 - 400 - V
VCE(SAT) I
C=10A, IB=2.0A - 1.5 - 1.5 V
VCE(SAT) I
C=10A, IB=2.0A, TC=100°C - 2.5 - 2.5 V
VCE(SAT) I
C=15A, IB=3.0A - 5.0 - 5.0 V
VBE(SAT) I
C=10A, IB=2.0A - 1.6 - 1.6 V
VBE(SAT) I
C=10A, IB=2.0A, TC=100°C - 1.6 - 1.6 V
hFE V
CE=2.0V, IC=5.0A 12 60 12 60
hFE V
CE=2.0V, IC=10A 6.0 30 6.0 30
TO-3 CASE
R2 (12-December 2011)
www.centralsemi.com
2N6546
2N6547
NPN SILICON
POWER TRANSISTOR
TO-3 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ft V
CE=10V, IC=500mA, f=1.0MHz 6.0 28 MHz
Cob V
CB=10V, IE=0, f=1.0MHz 125 500 pF
Is/b V
CE=100V, t=1.0s 0.2 A
Resistive Load
td 0.05 μs
tr 1.0 μs
ts 4.0 μs
tf 0.7 μs
Inductive Load (Clamped)
ts 5.0 μs
tf 1.5 μs
ts 2.0 μs
tf 0.9 μs
VCC=250V, IC=10A,
IB1=IB2=2.0A, tp=100μs,
Duty Cycle≤2.0%
VCL=Rated VCEX, IC=10A,
IB1=2.0A, VBE=5.0V, TC=100°C
VCL=Rated VCEX, IC=10A,
IB1=2.0A, VBE=5.0V, TC=25°C
www.centralsemi.com
R2 (12-December 2011)
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which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms
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(001)
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