BAS 70-04S Silicon Schottky Diode Array 4 * General-purpose diode for high-speed switching 5 * Circuit protection 6 * Voltage clamping * High-level detecting and mixing 2 1 3 VPS05604 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration BAS 70-04S 74s 1/4=A1 Q62702-A3468 2/5=C2 Package 3/6=C1/A2 SOT-363 Maximum Ratings Parameter Symbol Diode reverse voltage VR 70 V Forward current IF 70 mA Surge forward current (t< 100s) IFSM 100 Total power dissipation, T S 97C Ptot 250 mW Junction temperature Tj 150 C Operating temperature range Top -55...+150 Storage temperature Tstg -55...+150 Value Unit Thermal Resistance Junction - ambient 1) Junction - soldering point RthJA 445 RthJS 210 K/W 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAS 70-04S Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 70 - - DC characteristics Breakdown voltage V(BR) V I (BR) = 10 A Reverse current A IR VR = 50 V - - 0.1 VR = 70 V - - 10 Forward voltage mV VF I F = 1 mA 300 375 410 I F = 10 mA 600 705 750 I F = 15 mA 750 880 1000 CT - 1.6 2 pF - - 100 ps rf - 30 - AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Charge carrier life time I F = 25 mA Forward resistance I F = 10 mA, f = 10 kHz Semiconductor Group Semiconductor Group 22 Sep-07-1998 1998-11-01 BAS 70-04S Forward current IF = f (V F) Reverse current IR = f (VR) T A = Parameter TA = Parameter 10 2 F BAS 70W/BAS 170W EHB00042 10 2 mA R BAS 70W/BAS 170W EHB00043 A TA = 150 C 10 1 10 1 85 C 10 0 10 0 TA = -40 C 25 C 85 C 150 C 10 -1 10 -1 25 C 10 -2 10 -2 0.0 0.5 1.0 V 10 -3 1.5 0 20 40 60 Diode capacitance CT = f (V R) f = 1MHz CT 80 VR VF 2.0 V Differential forward resistance rf = f (IF) f = 10 kHz BAS 70W/BAS 170W EHB00044 10 3 pF rf BAS 70W/BAS 170W EHB00045 1.5 10 2 1.0 10 1 0.5 0.0 0 20 40 60 V 10 0 0.1 80 Semiconductor Group Semiconductor Group 1 10 mA 100 F VR 33 Sep-07-1998 1998-11-01 BAS 70-04S Forward current IF = f (TA*;TS) * Package mounted on epoxy 100 mA 80 IF 70 TS 60 50 TA 40 30 20 10 0 0 20 40 60 80 120 C 100 150 TA,TS Permissible Pulse Load Permissible Pulse Load R thJS = f(t p) IFmax / IFDC = f(tp) 10 2 10 3 IFmax / IFDC RthJS K/W 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp Semiconductor Group Semiconductor Group 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 44 Sep-07-1998 1998-11-01