BAS 70-04S
Semiconductor Group Sep-07-19981
Silicon Schottky Diode Array
• General-purpose diode for high-speed switching
• Circuit protection
• Voltage clamping
• High-level detecting and mixing
VPS05604
6
3
1
54
2
ESD: Electrostatic dischar
g
e sensitive device
,
observe handlin
g
precautions!
Type Marking Ordering Code PackagePin Configuration
74s Q62702-A3468 1/4=A1 2/5=C2 3/6=C1/A2 SOT-363BAS 70-04S
Maximum Ratings
Value UnitParameter Symbol
Diode reverse voltage V70
V
R70Forward current mA
I
F
Surge forward current (t< 100µs) 100
I
FSM
Total power dissipation,
T
S ≤ 97°C
P
tot mW250
150 °CJunction temperature
T
j
Operating temperature range -55...+150
T
op
T
st
g
-55...+150Storage temperature
Thermal Resistance
Junction - ambient 1)
R
thJA K/W
≤ 445
R
thJS ≤ 210
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group 1 1998-11-01
BAS 70-04S
Semiconductor Group Sep-07-19982
Electrical Characteristics at
T
A = 25°C, unless otherwise specified
Parameter Symbol UnitValues
typ. max.min.
DC characteristics
V-
V
(BR) -70Breakdown voltage
I
(BR) = 10 µA
µA
0.1
10
-
-
-
-
I
R
Reverse current
V
R = 50 V
V
R = 70 V
mVForward voltage
I
F = 1 mA
I
F = 10 mA
I
F = 15 mA
300
600
750
375
705
880
V
F
410
750
1000
AC characteristics
2 pFDiode capacitance
V
R = 0 V,
f
= 1 MHz 1.6
C
T-
100Charge carrier life time
I
F = 25 mA τps--
-Forward resistance
I
F = 10 mA,
f
= 10 kHz -
r
fΩ
30
Semiconductor Group 2 1998-11-01
BAS 70-04S
Semiconductor Group Sep-07-19983
Forward current
I
F =
f
(
V
F)
T
A = Parameter
0.0
EHB00042BAS 70W/BAS 170W
Ι
V
F
F
10
-1
-2
10
0
10
1
10
2
10
mA
0.5 1.0 V 1.5
T
A
= -40 C
25 C
85 C
150 C
Reverse current
I
R =
f
(
V
R)
T
A = Parameter
0
EHB00043
Ι
V
R
R
10
-1
-3
10
0
10
1
10
2
10
A
10
-2
20 40 60 V 80
T
A
= 150 C
85 C
25 C
µ
BAS 70W/BAS 170W
Diode capacitance
C
T =
f
(
V
R)
f
= 1MHz
0
0.0
EHB00044
C
V
R
T
20 40 60 V 80
0.5
1.0
1.5
pF
2.0
BAS 70W/BAS 170W
Differential forward resistance
r
f =
f
(
I
F)
f
= 10 kHz
0.1
10
EHB00045
r
Ι
f
1
10 mA
100
F
0
1
10
2
10
3
10
Ω
BAS 70W/BAS 170W
Semiconductor Group 3 1998-11-01
BAS 70-04S
Semiconductor Group Sep-07-19984
Forward current
I
F =
f
(
T
A*;
T
S)
* Package mounted on epoxy
0 20 40 60 80 100 120 °C 150
T
A
,T
S
0
10
20
30
40
50
60
70
80
mA
100
I
F
T
S
T
A
Permissible Pulse Load
R
thJS =
f
(
t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
t
p
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
I
Fmax /
I
FDC =
f
(
t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
t
p
0
10
1
10
2
10
-
I
Fmax /
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group 4 1998-11-01
