To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. H5N2001LD, H5N2001LS, H5N2001LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1339-0600 Rev.6.00 Jul 14, 2006 Features * Low on-resistance * Low leakage current * High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4 4 1 1 2 1. Gate 2. Drain 3. Source 4. Drain 2 3 3 H5N2001LD H5N2001LS D RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 G 1 2 3 H5N2001LM Rev.6.00 Jul 14, 2006 page 1 of 7 S H5N2001LD, H5N2001LS, H5N2001LM Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Body to drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. Tch 150C Symbol VDSS VGSS ID Ratings 200 30 20 80 20 80 20 75 1.67 150 -55 to +150 ID (pulse) Note 1 IDR IDR (pulse) Note 1 IAP Note 3 Pch Note 2 ch-c Tch Tstg Unit V V A A A A A W C/W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body to drain diode forward voltage Body to drain diode reverse recovery time Body to drain diode reverse recovery charge Note: 4. Pulse test Rev.6.00 Jul 14, 2006 page 2 of 7 Symbol V (BR) DSS IGSS IDSS VGS (off) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd VDF trr Min 200 -- -- 3.0 -- 8 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 0.100 14 1350 180 55 35 70 85 20 44 8 22 0.9 140 Max -- 0.1 1 4.5 0.125 -- -- -- -- -- -- -- -- -- -- -- 1.4 -- Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns Qrr -- 0.7 -- C Test Conditions ID = 10 mA, VGS = 0 VGS = 30 V, VDS = 0 VDS = 200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 10 A, VGS = 10 V Note 4 ID = 10 A, VDS = 10 V Note 4 VDS = 25 V VGS = 0 f = 1 MHz ID = 10 A RL = 10 VGS = 10 V Rg = 10 VDD = 160 V VGS = 10 V ID = 20 A IF = 20 A, VGS = 0 Note4 IF = 20 A, VGS = 0 diF/dt = 100 A/s H5N2001LD, H5N2001LS, H5N2001LM Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 1000 (A) 300 ID 75 100 30 PW 50 25 s( 50 100 1s 0.1 Case Temperature Tc (C) 30 100 300 1000 VDS (V) VDS = 10 V Pulse Test 7V 8V 40 30 Drain Current Drain Current 10 50 30 6V 20 10 VGS = 5 V 20 Tc = 75C 25C 10 -25C 0 0 0 4 8 12 Drain to Source Voltage 16 20 0 VDS (V) Pulse Test 3 ID = 20 A 2 10 A 1 5A 0 0 4 8 12 Gate to Source Voltage Rev.6.00 Jul 14, 2006 page 3 of 7 16 20 VGS (V) 4 6 8 10 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance RDS(on) () 4 2 Gate to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (V) 3 Typical Transfer Characteristics 10 V 40 t) Drain to Source Voltage ID (A) ID (A) Pulse Test ho Ta = 25C Typical Output Characteristics 50 10 s 0 s DC Operation Tc = 25C 1 200 150 s Operation in 1 this area is 0.3 limited by RDS (on) 0.01 0 10 =1 3 0.03 0 1m 0m 10 Drain Current Channel Dissipation Pch (W) 100 1 Pulse Test VGS = 10 V 0.5 0.2 0.1 0.05 0.02 0.01 1 3 10 30 Drain Current 100 300 ID (A) 1000 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) () H5N2001LD, H5N2001LS, H5N2001LM 0.5 Pulse Test VGS = 10 V 0.4 0.3 10 A ID = 20 A 0.2 0.1 5A 0 -25 0 25 50 75 100 125 150 Case Temperature Tc 100 30 Tc = -25C 10 25C 3 75C 1 0.3 VDS = 10 V Pulse Test 0.1 0.1 0.3 200 100 50 20 10 5 di / dt = 100 A / s VGS = 0, Ta = 25C 2 100 10000 3000 Ciss 1000 300 Coss 100 Crss 30 10 0.3 1 3 10 30 100 0 50 VDD = 160 V 100 V 50 V 200 VDS 100 4 VDD = 160 V 100 V 50 V 0 20 40 Gate Charge Rev.6.00 Jul 14, 2006 page 4 of 7 60 8 80 Qg (nc) 0 100 10000 Switching Time t (ns) 12 300 VGS (V) VGS Gate to Source Voltage ID = 20 A 150 Switching Characteristics 16 400 100 Drain to Source Voltage VDS (V) IDR (A) Dynamic Input Characteristics 0 30 VGS = 0 f = 1 MHz 30000 Capacitance C (pF) Reverse Recovery Time trr (ns) 100000 500 Reverse Drain Current (V) 10 Typical Capacitance vs. Drain to Source Voltage 1000 1 0.1 VDS 3 Drain Current ID (A) (C) Body to Drain Diode Reverse Recovery Time Drain to Source Voltage 1 VGS = 10 V, VDD = 100 V RW = 5 s, duty 1 % 3000 Rg = 10 1000 tr 300 tf tf td(off) 100 td(on) 30 10 0.1 tr 0.3 1 3 Drain Current 10 30 ID (A) 100 H5N2001LD, H5N2001LS, H5N2001LM Reverse Drain Current vs. Souece to Drain Voltage Gate to Source Cutoff Voltage vs. Case Temperature 5 Gate to Source Cutoff Voltage VGS (off) (V) Reverse Drain Current IDR (A) 50 40 30 20 10 VGS = 0, -5 V 5V 10 V ID = 10 mA 4 3 1 mA 0.1 mA 2 1 VDS = 10 V Pulse Test 0 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 0 -25 2.0 VSD (V) 0 25 50 75 100 125 150 Case Temperature Tc (C) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25C 1 D=1 0.5 0.3 0.2 ch - c (t) = s (t) * ch - c 0.1 0.1 ch - c = 1.67C/W, Tc = 25C 0.05 PDM 2 0.03 0.0 1 0 e . 0 uls tp o h 1s 0.01 10 100 D= PW T PW T 1m 100 m 10 m 1 10 Pulse Width PW (S) Switching Time Test Circuit 90% Vout Monitor Vin Monitor 10 Switching Time Waveform D.U.T. Vin Vout Vin 10 V VDD = 100 V 10% 10% 90% td(on) Rev.6.00 Jul 14, 2006 page 5 of 7 10% RL tr 90% td(off) tf H5N2001LD, H5N2001LS, H5N2001LM Package Dimensions RENESAS Code PRSS0004AE-A MASS[Typ.] 1.40g 4.44 0.2 1.3 0.15 1.3 0.2 1.37 0.2 0.76 0.1 2.54 0.5 2.54 0.5 JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B 2.49 0.2 11.0 0.5 0.2 0.86 +- 0.1 Package Name LDPAK(S)-(1) Unit: mm 10.2 0.3 8.6 0.3 11.3 0.5 0.3 10.0 +- 0.5 Previous Code LDPAK(L) / LDPAK(L)V Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V 0.4 0.1 MASS[Typ.] 1.30g (1.5) 10.0 Rev.6.00 Jul 14, 2006 page 6 of 7 2.54 0.5 0.4 0.1 0.3 3.0 +- 0.5 2.54 0.5 0.2 0.86 +- 0.1 7.8 7.0 2.49 0.2 0.2 0.1 +- 0.1 1.37 0.2 1.3 0.2 7.8 6.6 1.3 0.15 + 0.3 - 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 Unit: mm 1.7 JEITA Package Code (1.4) Package Name LDPAK(L) 2.2 H5N2001LD, H5N2001LS, H5N2001LM JEITA Package Code RENESAS Code PRSS0004AE-C Previous Code LDPAK(S)-(2) / LDPAK(S)-(2)V MASS[Typ.] 1.35g 7.8 6.6 (2.3) 10.0 2.49 0.2 0.2 0.1 +- 0.1 7.8 7.0 1.3 0.15 + 0.3 - 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 Unit: mm 1.7 Package Name LDPAK(S)-(2) 2.2 1.37 0.2 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.4 0.1 0.3 5.0 +- 0.5 1.3 0.2 Ordering Information Part Name H5N2001LD-E H5N2001LSTL-E H5N2001LMTL-E Quantity 500 pcs 1000 pcs 1000 pcs Shipping Container Box (Conductive Sack) Taping Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.6.00 Jul 14, 2006 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. 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