LWE D Bj esuuz4e 00072b6 :? { MMBT4124 NPN EPITAXIAL SILICON TRANSISTOR LTA 1% | SAMSUNG SEMICONOUCTOR . INC eon re one . wee GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (T,=25C) Characteristic Symbol | Rating Unit Collector-Base Voltage Vso "30 v Collector-Emitter Voltage Veeo - 25 4 Emitter-Base Voltage Veo 5 v Collector Current Ie 200 mA Collector Dissipation Pe 350 mw Storage Temperature Tstg 150 c * Refer to MMBT3904 for graphs . 4. Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (T, =25C) Characteristic Symbol Test Condition | Min * Max Unit Collector-Base Breakdown Voltage BV cso k=10pA, lE=0 30 Vv *Collector-Emitter Breakdown Voltage | BVceo k=1.0mA, lb=O 25 Vv Emitter-Base Breakdown Voltage BVeso fE=10pA, Ig=0 5 Vv Collector Cutoff Current Icpo Ven=20V, le=O0 50 - nA Emitter Cutoff Current leeo Ves=3V, Ic=0 50 nA *DC Current Gain Nee Vcr =F 1V, le=2mA 120 360 Vce=1V, lc=50mA 60 *Collector-Emitter Saturation Voltage Vee (sat) | t=50mA, lp=5.0mMA 0.3 Vv *Base-Emitter Saturation Voltage Vee (sat) | c= 50mA, Ip=5.0mA 0.95 Vv Current Gain-Bandwidth Product fr lc=10mA, Vce=20V 300 MHz f=100MHz Cutput Capacitance Cob Vea =5V, le=O 4 pF , f=1,0MHz Noise Figyre NF I= 100pA, Vce=5V 5 dB Rs=1KQ f=10Hz to 15.7KHz * Pulse Test: Pulse Width<300ps, Duty Cycle2% *. Marking FA ZC i ee SAMSUNG SEMICONDUCTOR 636