NJM2275
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VHF/UHF BAND RF AMPLIFIER
GENERAL DESCRIPTION PACKAGE OUTLINE
The NJM2275 is a low current, low voltage RF amplifier,
especially designed for VHF/UHF band.
The center frequency of this narrow band amplifier is
changed by external components.
NJM2275F1
FEATURES
Wide Operating Voltage 1.8V to 6V
Low Operating Current 0.8mA type. @ V
+
=1.9V, no signal input
High Gain
Power Gain 15dB @1.9V, 400MHz input
Voltage Gain 30dB @1.9V, 400MHz input, 1kΩ load
Operating Frequency band Up to 800MHz
High Isolation (OUT to IN) 45dB @1.9V, 400MHz
Bipolar Technology
Package Outline SOT23-6 (MTP6)
PIN CONFIGULATION
Pin Function
1. RF IN
2. GND
3. BIAS CAP
4. RF OUT
5. IREF
6. V+
Simplified Block Diagram
1
2
3
6
5
4
To
p
View
Orientation Mark
4
V
+
I REF
BIAS CAP
GND
RF OUT
5
61
3
2
RF IN
4
V+
I REF
BIAS CAP
GND
RF OUT
5
61
3
2
RF IN
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ABSOLUTE MAXIMUM RATINGS
(Ta=25°C)
PARAMETER SYMBOL RATINGS UNIT
Supply Voltage V
+
10.0 V
Power Dissipation P
D
200 mW
RF Input Level Pinmax 6 dBm
Operating Temperature T o p r - 40 to + 85 °C
Storage Temperature T s t g - 40 to +125 °C
RECOMMENDED OPERATING CONDITIONS
(Ta=25°C)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Supply Voltage V
+
1.8 1.9 6.0 V
ELECTRICAL CHARACTERISTICS
(Ta=25°C, V
+
=1.9V, fin=400MHz, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Operating Current I c c No signal - 0.8 1.0 mA
Power Gain PG Pin= - 40dBm
Test circuit 1 - 15 - dB
Voltage Gain VG Pin= - 40dBm
Test circuit 2 - 30 - dB
Noise Figure NF Test Circuit 3 - 2.2 - dB
Input Return Loss l S 1 1 l Pin= - 40dBm
Tes t Circ u i t 4 - - 8 - dB
Output Return Loss l S 2 2 l Pin= - 40dBm
Tes t Circ u i t 4 - - 20 - dB
RF OUT - RF IN Isolation I S L Pin= - 40dBm
Test Circuit1 - 45 - dB
Power Input at 1dB compression Point P
–1 dB
Test Circuit1 - - 28 - dBm
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TEST CIRCUIT
These test circuits allow the measurement of all parameters described in “ELECTRICAL CHARACTERISTICS”.
Test Circuit 1 for Icc, PG , P
–1 d B
and Pin vs. Pout
Test Circuit 2 for VG
PG and VG has the following relation.
PG = Pout – Pin
VG = (Pout + Prl ) – Pin
where
Pin = input level in dBm
Pout = output level in dBm
Prl = the loss caused by the voltage drop of RL.
RL is 1000 Ω. The input impedance of spectrum analyzer Zin is 50Ω. Prl is calculated from
Prl = 20log ( ( RL + Zin) / RL)
Prl = 20 log (1050 / 50 )
Lout
27n 1000p
1000p
V
+
SG
(50Ω)
Cout
1000p
8p15n
2p
L in C in
Cb
Cv
CL
Spe ctr um
Analyzer
(Zin=50Ω)
4
V+
I REF
GND
RF OUT
5
61
3
2
RF IN
1000p
Cre
f
RL
0Ω
BIAS CAP
Lout
27n 1000p
1000p
V
+
SG
(50Ω)
Cout
1000p
4p
27n
1000p
L in C in
Cb
Cv
CL
Spectr um
Analyzer
(Zin=50Ω)
4
V+
I REF
GND
RF OUT
5
61
3
2
RF IN
1000p
Cref
RL
1kΩ
BIAS CAP
NJM2275
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Test Circuit 3
for
NF
Tes t Circu it 4 for l S 1 1 l and l S 22 l
Test Circuit 5 for S-Parameters (this item is not specified in “ELECTRICAL CHARACTERISTICS”)
Lout
27n 1000p
1000p
V
+
Cout
1000p
8p15n
2p
L in C in
Cb
C
v
CL
NF
meter
4
V+
I REF
BIAS CAP
GND
RF OUT
5
61
3
2
RF IN
Cref
1000p
1000
p
V+
1000
p
Cb1
Cv1
4
V+
I REF
BIAS CAP
GND
RF OUT
5
61
3
2
RF IN
Cb2
0.1u
Cref1
1000
p
0.1u
Cv2
Cref2
0.1u
Network Analyzer
Port1 Port2
HP8753D
Lout
27n 1000
p
1000
p
V
+
Cout
1000
p
8
p
15n
2p
L in C in
Cb1
Cv
CL
Ne t w or k
Analyzer
4
V+
I REF
BIAS CAP
GND
RF OUT
5
61
3
2
RF IN
Cref
1000
p
NJM2275
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EVALUATION PC BOARD
The evaluation board is useful for your design and to have more understanding of the usage and performance of
this device. This circuit is the same as TEST CIRCUIT. Note that this board is not prepared to show the
recommendation of pattern and parts layout.
Circuit Diagram
Evaluation PC Board
This evaluation board is designed to have the maximum value of PG at 400MHz.
By using the value of Test Circuit2, this board can have the maximum value of VG at 400MHz.
Cref is effective to obtain good NF. However, if the ground has a large noisy signal, NF may become worse.
1608
1608
①
16081608
1608
1608
1608 1608
1608
Cin Lin
Cb
Cv
Lout
Rl
Cl
Cout RFOUT
RFIN
V+
Cref
Pin1
Lout
27n1000p
1000p
V
+
Cout
1000p
8p15n
2p
L inC in
Cb
Cv
CL
4
V+
I REF
GND
RF OUT
5
61
3
2
RF IN
1000p
Cre
f
RL
0Ω
RF IN
RF OUT
BIAS CAP
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TERMINAL FUNCTION (
Ta=25°C, V
+
=1.9 V
)
Pin No. SYMBOL EQUIVARENT CIRCUIT VOLTAGE FUNCTION
1 RF IN
1.09V
RF Input
2 GND -- --
Ground
3 BIAS CAP
0.33V
Bias Capacitance
An external decoupling capacitor
is placed between this pin and
ground.
4
RF OUT
V+
RF Output
5 IREF
0.75V
Reference of Current Source
An external decoupling capacitor
is placed between this pin and
ground. An external resistor from
this pin to ground can controls the
reference current of current
source and the related
performances, such as NF and
gain.
6 V+
--
Supply Voltage
ESD protection transistor exists
between V+ and ground.
1
2k
3
500
2
6
1
2k
3
500
2
6
5k
4
6
2
70
5
6
2
6
2
NJM2275
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TYPICAL CHARACTERISTICS
(
Ta=25°C, V
+
=1.9V, unless otherwise noted
)
Power Gain PG versus Supply Voltage V+
5
10
15
20
25
1234567
V+(V)
PG(dB)
Test circuit 1
-40°C
25°C
85°C
125°C
Pin at 1dB Compression Point P-1dB
versus Supply Voltage V+
-34
-32
-30
-28
-26
-24
-22
-20
1234567
V+(V)
P-1dB(dBm)
Test circuit 1
125°C
85°C
25°C
-40°C
Voltage Gain VG versus Supply Voltage V+
20
25
30
35
40
1234567
V+（
（（
（V）
））
）
VG(dB)
Test circuit 2
-40°C
25°C
85°C
125°C
Noise Figure NF versus Supply Voltage V+
0.0
1.0
2.0
3.0
4.0
5.0
1234567
V+（
（（
（V）
））
）
NF(dB)
Test circuit 3
125°C
85°C
25°C
-40°C
RF OUT-RF IN Isolation ISL
versus Supply Voltage V+
40
45
50
55
60
1234567
V+
（
（（
（
V)
ISL(dB)
85°C -40°C
125°C 25°C
Test circuit 1
Operating Current Icc versus Supply Voltage V+
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1234567
V+(V)
Icc(mA)
125°C -40°C
25°C 85°C
No signal
NJM2275
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Power Gain PG versus Ambient Temperature Ta
5
10
15
20
25
-50 -25 0 25 50 75 100 125
Ta(°C)
PG(dB)
6V
1.9V
1.8V
Test circuit 1
Voltage Gain VG versus
Ambient Temperature Ta
20
25
30
35
40
-50 -25 0 25 50 75 100 125
Ta(°C)
VG(dB)
6V
1.9V
1.8V
Test circuit 2
Noise Figure NF versus Ambient Temperature Ta
0.0
1.0
2.0
3.0
4.0
5.0
-50 -25 0 25 50 75 100 125
Ta(°C)
NF (dB)
1.8V, 1.9V
4V, 6V
Test circuit 3
RF OUT-RF IN Isolation ISL versus
Ambient Tempeature Ta
40
45
50
55
60
-50-25 0 25 50 75100125
Ta
（
（（
（
°C
）
））
）
ISL(dB)
6V 4V
1.8V
1.9V
Test circuit 1
Pin at 1dB Compression Point P-1dB
versus Ambient Temperature Ta
-34
-32
-30
-28
-26
-24
-22
-20
-50 -25 0 25 50 75 100 125
Ta(°C)
P-1dB(dBm)
1.8V,1.9V,6V
Test circuit 1
Operating Current Icc versus
Ambient Temperature Ta
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50 -25 0 25 50 75 100 125
Ta(°C)
Icc(mA)
1.9V
6V
4V
1.8V
No signa l
NJM2275
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Input Return Loss |S11| versus
Supply Voltage V+
-15
-10
-5
0
01234567
V+ (V)
|S11| (dB)
Test circuit 4
125°C
85°C
25°C
-40°C
Output Return Loss |S22| versus
Supply Voltage V+
-25
-20
-15
-10
01234567
V+ (V)
|S22| (dB)
Test circuit 4
125°C 25°C
85°C
-40°C
Input Return Loss |S11| versus
Ambient Temperature Ta(°C)
-15
-10
-5
0
-50 -25 0 25 50 75 100 125
Ta(°C)
|S11| (dB)
1.8V, 1.9V
4V, 6V
Test circuit 4
Output Return Loss |S22| versus
Ambient Temperature Ta(°C)
-25
-20
-15
-10
-50 -25 0 25 50 75 100 125
Ta(°C)
|S22| (dB)
1.8V 1.9V
4V 6V
Test circuit 4
Output Power Pout/Operating Current Icc
versus Input Power Pin
-50
-40
-30
-20
-10
0
10
-60 -50 -40 -30 -20 -10 0 10 20
Pin(dBm)
Pout(dBm)
0
2
4
6
8
10
12
Icc(mA)
V+=1.9V
fin=400MHz
Pout
Icc
Power Gain PG/Noise Figure NF versus
Frequency fin
0
2
4
6
8
10
12
14
16
18
20
380 390 400 410 420
fin (MHz)
PG (dB)
0
1
2
3
4
5
6
7
8
9
10
NF (dB)
PG
NF
NJM2275
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S Paramater (reference)
S11 S21 S12 S22
MHz
mag(units) ang(deg) mag(units) ang(deg) mag(units) ang(deg) mag(units) ang(deg)
50 0.95 -2.16 2.23 178.17 0.002 81.16 1.00 -0.42
100 0.91 -14.64 2.14 161.70 0.004 -162.40 0.99 -3.27
300 0.84 -45.83 1.99 130.37 0.003 1.93 0.99 -10.85
322 0.82 -46.06 2.02 125.33 0.004 109.90 0.98 -9.94
400 0.75 -57.89 1.92 112.13 0.003 115.87 0.98 -12.42
430 0.75 -61.93 1.91 107.89 0.003 143.47 0.98 -13.94
500 0.70 -71.95 1.82 96.80 0.005 62.77 0.98 -16.36
700 0.54 -100.22 1.61 67.85 0.002 160.15 0.96 -21.84
1000 0.39 -146.15 1.35 26.94 0.008 60.40 0.92 -34.32
Input Reflection Coefficient S11
versus Frequency
-10
-8
-6
-4
-2
0
0 200 400 600 800 1000
Frequency (MHz)
S11 (dB)
Test circuit 5
Output Reflection Coefficient S22
versus Frequency
-10
-8
-6
-4
-2
0
0 200 400 600 800 1000
Frequency (MHz)
S22 (dB)
Test circuit 5
Forward Transmission Coefficient S12
versus Frequency
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0 200 400 600 800 1000
Frequency (MHz)
S12 (dB)
Test circuit 5
Reverse Transmission Coefficient S21
versus Frequency
0
2
4
6
8
10
0 200 400 600 800 1000
Frequency (MHz)
S21 (dB)
Test circuit 5
NJM2275
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[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
S11
0
25 50
150
+j50
+j25 +j100
-j25 -j100
Test circuit 5
1000MHz
800MHz
700MHz 300MHz
100MHz
40MHz
10MHz
500MHz
400MHz
-j50
S22
0
25 50
150
+j50
+j25 +j100
-j25 -j100
Test circuit 5
1000MHz
800MHz
700MHz
300MHz
100MHz
40MHz
500MHz
400MHz
10MHz
-j50
