© 2004 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 250 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ250 V
VGSM ±20 V
ID25 TC= 25°C64A
IDM TC= 25°C, pulse width limited by TJM 160 A
IAR TC= 25°C60A
EAR TC= 25°C40mJ
EAS TC= 25°C 1.0 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns
TJ≤ 150°C, RG = 4 Ω
PDTC= 25°C 400 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
MdMounting torque (TO-3P) 1.13/10 Nm/lb.in.
Weight TO-3P 5.5 g
TO-268 5.0 g
G = Gate D = Drain
S = Source TAB = Drain
DS99120A(02/04)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
VDSS VGS = 0 V, ID = 250 µA 250 V
VGS(th) VDS = VGS, ID = 250µA 2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS 25 µA
VGS = 0 V TJ = 125°C 250 µA
RDS(on) VGS = 10 V, ID = 0.5 ID25 48 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PolarHTTM
Power MOSFET
IXTQ 64N25P VDSS = 250 V
IXTT 64N25P ID25 = 64 A
RDS(on) = 48 mΩΩ
ΩΩ
Ω
N-Channel Enhancement Mode
Features
zInternational standard packages
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
Advantages
zEasy to mount
zSpace savings
zHigh power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
TO-3P (IXTQ)
GDS(TAB)
TO-268 (IXTT)
GSD (TAB)
Preliminary Data Sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXTQ 64N25P
IXTT 64N25P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10 V; ID = 0.5 ID25, pulse test 22 30 S
Ciss 3450 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 640 pF
Crss 155 pF
td(on) 21 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = ID25 23 ns
td(off) RG = 4 Ω (External) 60 ns
tf20 ns
Qg(on) 105 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 24 nC
Qgd 53 nC
RthJC 0.31 K/W
RthCK (TO-3P) 0.21 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. typ. Max.
ISVGS = 0 V 64 A
ISM Repetitive 160 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = 25 A 200 ns
-di/dt = 100 A/µs
QRM VR = 100 V 3.0 µC
TO-268 Outline
TO-3P (IXTQ) Outline
© 2004 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
20
40
60
80
100
120
140
160
180
02468101214161820
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
9V
7V
6V
8V
5V
Fig. 3. Output Characteristics
@ 125
º
C
0
8
16
24
32
40
48
56
64
012345678
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
5V
6V
7V
Fig. 1. Output Characteristics
@ 25
º
C
0
8
16
24
32
40
48
56
64
00.511.522.533.54
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
6V
5V
Fig. 4. R
DS(on
)
Norm alize d to 0.5 I
D25
Value vs. Junction Temperature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S ( o n )
- Normalize
d
I
D
= 64A
I
D
= 32A
V
GS
= 10V
Fig. 6. Drain Curre nt vs . Cas e
Tem perature
0
10
20
30
40
50
60
70
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 5. R
DS(on)
Normalize d to
0.5 I
D25
Value vs. I
D
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
3.7
0306090120150180
I
D
- Amperes
R
D S ( o n )
- Normalize
d
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
IXTQ 64N25P
IXTT 64N25P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXTQ 64N25P
IXTT 64N25P
Fig. 11. Capacitance
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - picoFarads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090100110
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 125V
I
D
= 32A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
15
30
45
60
75
90
105
120
44.5 55.5 66.5 77.5 8
V
G S
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
-40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
0153045607590105120135
I
D
- Amperes
g f s
- Siemens
T
J
= -40ºC
25ºC
125ºC
Fig. 9. Source Current vs .
Source-To-Drain Voltage
0
30
60
90
120
150
180
0.4 0.6 0.8 1 1.2 1.4
V
S D
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 12. For w ar d-Bias
Safe Operating Area
1
10
100
1000
10 100 1000
V
D S
- Volts
I
D
- Amperes
100µs
1ms
DC
T
J
= 150ºC
T
C
= 25ºCR
D S( on)
Limit
10ms
25
µ
s
© 2004 IXYS All rights reserved
Fig. 13. M axim um Transient Therm al Resistance
0.01
0.10
1.00
1 10 100 1000
Pulse Width - milliseconds
R( t h ) J C
- ºC / W
IXTQ 64N25P
IXTT 64N25P
