SUD50P04-08 Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () ID (A) 0.0081 at VGS = - 10 V - 50d 0.0117 at VGS = - 4.5 V - 48d * Halogen-free According to IEC 61249-2-21 Definition * TrenchFET(R) Power MOSFET * 100 % Rg and UIS Tested * Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 60 APPLICATIONS * Power Switch * Load Switch in High Current Applications * DC/DC Converters S TO-252 G Drain Connected to Tab G D S D Top View P-Channel MOSFET Ordering Information: SUD50P04-08-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 40 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 C) TC = 25 C TC = 70 C Pulsed Drain Current Avalanche Current a L = 0.1 mH Single Avalanche Energy TC = 25 C Maximum Power Dissipationa TA = 25 Operating Junction and Storage Temperature Range Cc ID V - 50d - 50d IDM - 100 IAS - 46 EAS 106 PD Unit 73.5 A mJ b 2.5 W TJ, Tstg - 55 to 150 C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) RthJA 50 RthJC 1.7 C/W Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 65594 S10-0034-Rev. A, 11-Jan-10 www.vishay.com 1 SUD50P04-08 Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = - 250 A - 40 VGS(th) VDS = VGS, ID = - 250 A -1 IGSS VDS = 0 V, VGS = 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS - 2.5 250 VDS = - 40 V, VGS = 0 V -1 VDS = - 40 V, VGS = 0 V, TJ = 125 C - 50 VDS = - 40 V, VGS = 0 V, TJ = 150 C - 250 VDS - 10 V, VGS = - 10 V ID(on) RDS(on) gfs - 50 V nA A A VGS = - 10 V, ID = - 22 A 0.0067 0.0081 VGS = - 4.5 V, ID = - 19 A 0.0097 0.0117 VDS = - 15 V, ID = - 22 A 45 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec Rise Timec VDS = - 20 V, VGS = - 10 V, ID = - 20 A VDS = - 20 V, VGS = - 4.5 V, ID = - 20 A Fall Timec td(off) 106 159 60 90 22 f = 1 MHz VDD = - 20 V, RL = 2 ID - 10 A, VGEN = - 10 V, Rg = 1 tf Drain-Source Body Diode Ratings and Characteristics TC = 25 C 0.4 1.8 3.6 15 23 12 18 70 105 18 27 - 50 Pulsed Current ISM - 100 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = - 10 A, VGS = 0 V - 0.8 IF = - 10 A, dI/dt = 100 A/s 33 trr IRM(REC) Qrr ns b IS Continuous Current nC 27 td(on) tr c pF 570 500 Rg Gate Resistance Turn-Off Delay Time 5380 VGS = 0 V, VDS = - 20 V, f = 1 MHz A - 1.5 V 35 53 ns -2 -3 A 50 nC Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65594 S10-0034-Rev. A, 11-Jan-10 SUD50P04-08 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 0.015 VGS = 10 V thru 5 V I D - Drain Current (A) R DS(on) - On-Resistance () VGS = 4 V 80 60 40 20 0.012 VGS = 4.5 V 0.009 VGS = 10 V 0.006 VGS = 3 V 0 0.0 0.003 0.5 1.0 1.5 2.0 2.5 0 20 40 VDS - Drain-to-Source Voltage (V) 80 100 ID - Drain Current (A) Output Characteristics On-Resistance vs. Drain Current 10 0.030 8 0.024 R DS(on) - On-Resistance () I D - Drain Current (A) 60 6 4 TC = 25 C 0.018 TJ = 150 C 0.012 TJ = 25 C 0.006 2 TC = 125 C TC = - 55 C 0 0 1 2 3 0.000 2 4 VGS - Gate-to-Source Voltage (V) 6 8 10 VGS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 10 100 ID = 20 A VGS - Gate-to-Source Voltage (V) TC = - 55 C g fs - Transconductance (S) 4 75 TC = 25 C TC = 125 C 50 25 8 VDS = 20 V 6 VDS = 10 V VDS = 32 V 4 2 0 0 0 10 Document Number: 65594 S10-0034-Rev. A, 11-Jan-10 20 30 40 50 0 30 60 90 ID - Drain Current (A) Qg - Total Gate Charge (nC) Transconductance Gate Charge 120 www.vishay.com 3 SUD50P04-08 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 - 1.0 10 ID = 250 A VGS(th) (V) I S - Source Current (A) - 1.3 TJ = 150 C TJ = 25 C - 1.6 - 1.9 1 - 2.2 0.1 0.0 0.3 0.6 0.9 - 2.5 - 50 1.2 0 25 50 75 VSD - Source-to-Drain Voltage (V) TJ - Temperature (C) Source-Drain Diode Forward Voltage Threshold Voltage 8000 100 125 150 100 125 150 VDS - Drain-to-Source Voltage (V) - 43 6000 C - Capacitance (pF) - 25 Ciss 4000 2000 Coss ID = 250 A - 45 - 47 - 49 Crss 0 0 10 20 30 - 51 - 50 40 - 25 0 25 50 75 VDS - Drain-to-Source Voltage (V) TJ - Junction Temperature (C) Capacitance Drain Source Breakdown vs. Junction Temperature 80 2.0 ID = 20 A 60 I D - Drain Current (A) VGS = 10 V (Normalized) R DS(on) - On-Resistance 1.7 1.4 VGS = 4.5 V 1.1 Package Limited 40 20 0.8 0.5 - 50 www.vishay.com 4 0 - 25 0 25 50 75 100 125 150 0 25 50 75 100 TJ - Junction Temperature (C) TC - Case Temperature (C) On-Resistance vs. Junction Temperature Current Derating 125 150 Document Number: 65594 S10-0034-Rev. A, 11-Jan-10 SUD50P04-08 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 1000 Limited by RDS(on)* 100 I D - Drain Current (A) I DAV (A) 100 A TJ = 25 C TJ = 150 C 10 10 1 0.1 1 10-5 10-4 10-3 10-2 1 ms 10 ms, 100 ms 1 s, 10 s, DC TC = 25 C Single Pulse 0.01 0.1 10-1 Time (s) BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Single Pulse Avalanche Current Capability vs. Time Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65594. Document Number: 65594 S10-0034-Rev. A, 11-Jan-10 www.vishay.com 5 Package Information Vishay Siliconix TO-252AA CASE OUTLINE E A MILLIMETERS C1 e b1 D1 e1 E1 L gage plane height (0.5 mm) L1 b L3 H D L2 b2 C A2 A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 A2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.10 4.45 0.161 0.175 E 6.48 6.73 0.255 0.265 E1 4.49 5.50 0.177 0.217 e e1 2.28 BSC 4.57 BSC 0.090 BSC 0.180 BSC H 9.65 10.41 0.380 L 1.40 1.78 0.055 0.410 0.070 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.040 0.060 ECN: T11-0110-Rev. L, 18-Apr-11 DWG: 5347 Note * Dimension L3 is for reference only. Document Number: 71197 18-Apr-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000